摘要:
A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch processing of the fine pattern of a semiconductor device. The apparatus and method enables a magnitude of a magnetic field to be cyclically modulated when a substrate to be treated is etch processed. The cyclical modulation may be effected by cyclically modulating a coil current flowing to a solenoid coil.
摘要:
An etching method capable of obtaining a fine fabricated shape, particularly, a vertical fabricated shape with less bowing upon fabrication of insulation films in the production of semiconductors, the method comprising controlling the incident amount of O, F or N radicals, gas flow rate or consumption amount of O, F and N on the inner wall surface with etching time to suppress excessive O, F and N which become excessive in the initial stage of etching, the method also including control for the flow rate or the consumption amount based on the result of measurement for plasmas during etching so as to obtain a stable etching shape. Since bowing can be reduced upon fabrication of insulation film hole and insulation film while maintaining the etching rate and the selectivity, finer semiconductor device can be produced easily.
摘要:
A method of dry cleaning surfaces of a semiconductor wafer includes the steps of placing a processed wafer in a vacuum environment and positioning a pad near each of a front surface and a back surface of the wafer. Cleaning gas is injected into a small clearance formed between each pad and the front and rear surfaces to generate a high-speed gas flow along the surface of the wafer. Particles left at the surfaces of the processed wafer are physically cleaned and removed with the high-speed gas flow. In order to assist this physical cleaning action, it is also possible to apply either a chemical cleaning method or an electrical cleaning method under application of plasma.
摘要:
A dry cleaning device, wherein a pad is moved towards a surface of a wafer, cleaning gas is injected into a space formed between the pad and the wafer to generate a high-speed gas flow along the surface of the wafer whereby particles left on the surface of the wafer are removed with the high-speed gas flow. In addition, in order to assist this physical cleaning action, either a chemical or an electrical cleaning method such as a plasma additionally may be used.
摘要:
A parallel plate ECR plasma processing system is able to extend a plasma density region capable of keeping a continuous, uniform state. In this system, a first magnetic field-forming means formed of a solenoid coil and a second magnetic field-forming means are provided so that a the distribution of a direction of a magnetic line of flux on the surface of a planar plate is controlled by a combined magnetic field from the first and second magnetic field-forming means thereby controlling the distribution in degree of the interactions of the magnetic field and an electromagnetic wave. This control ensures the uniformity of a plasma under high density plasma formation conditions, thus enabling one to form a continuous plasma over a wide range of low to high densities. Thus, there can be realized a plasma processing system that ensures processing under wide plasma conditions including high-speed processing under high density conditions.
摘要:
Automatic generation of processing conditions will be provided, based on a database and process modeling by a computer equipped in semiconductor device fabrication equipment, by using input of wafer processing history including the thickness and quality. The computer equipped in semiconductor device fabrication equipment obtains the wafer processing and inspection results from a production line management computer in order to assist input of the process history. The computer in the fabrication equipment can be connected to computers in a fabrication equipment manufacturer on a communication network to automatically provide process conditions and maintenance schedule.
摘要:
The present invention provides a dry chemical-mechanical polishing method to perform etching in efficient manner. The dry chemical-mechanical polishing method comprises the steps of bringing surface of a polishing specimen retained on a specimen stand 114 into contact with a polishing tool while supplying plasma 106 from a plasma source, moving relative positions of the polishing specimen and the polishing tool and then polishing, and planarizing the surface of the polishing specimen, whereby diameter of the polishing specimen is increased to larger than diameter of the polishing tool, for instance, so that at least a part of the surface of the polishing specimen is exposed to an atmosphere of the plasma during polishing operation.
摘要:
Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. To accommodate such a problem, an etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce a molecular chemical species such as CF.sub.4, CF.sub.2, CF.sub.3 and C.sub.2 F.sub.4 for etching. This method assures a high etching rate and high selectivity while keeping a process window wide.
摘要:
Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. An etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce molecular chemical species such as CF4, CF2, CF3 and C2F4 for etching. This method assures a high etch rate and high selectivity while keeping a process window wide.
摘要:
Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected to limited use or become difficult to obtain in the future. An etching gas containing fluorine atoms is introduced into a plasma chamber. In a region where plasma etching takes place, the fluorine-containing gas plasma is made to react with solid-state carbon in order to produce molecular chemical species such as CF4, CF2, CF3 and C2F4 for etching. This method assures a high etch rate and high selectivity while keeping a process window wide.
摘要翻译:由于环境污染防治法,PFC(全氟化碳)和HFC(氢氟碳化合物)两种氧化硅和氮化硅膜的蚀刻气体预计将受到有限的使用或将来难以获得。 含有氟原子的蚀刻气体被引入到等离子体室中。 在进行等离子体蚀刻的区域中,使含氟气体等离子体与固态碳反应,以产生分子化学物质,例如CF 4,CF 2, SUB 3,CF 3 3和C 2 F 4 S 3用于蚀刻。 该方法确保了高蚀刻速率和高选择性,同时保持了工艺窗口宽。