公开(公告)号：US07964867B2

公开(公告)日：2011-06-21

申请号：US11813075

申请日：2005-12-22

申请人： Toshitsugu Sakamoto ,  Hisao Kawaura

发明人： Toshitsugu Sakamoto ,  Hisao Kawaura

IPC分类号： H01L29/10

CPC分类号： G11C13/0028 ,  G11C13/0023 ,  G11C13/02 ,  G11C2213/56 ,  G11C2213/79 ,  H01L27/105 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/1266 ,  H01L45/141 ,  H01L45/145 ,  H01L45/147 ,  H01L45/1641 ,  H01L45/1675 ,  Y10T29/49105

摘要： The switching element of the present invention includes an ion conduction layer (40) capable of conducting metal ions, a first electrode (21) and a second electrode (31) provided in contact with the ion conduction layer (40), and a third electrode (35) provided in contact with the ion conduction layer (40) and capable of supplying metal ions, and is of a configuration in which the area over which the first electrode (21) contacts the ion conduction layer (40) is smaller than the area over which the second electrode (31) contacts the ion conduction layer (40). The use of this configuration decreases the leak current in the OFF state.

摘要翻译： 本发明的开关元件包括能够导电金属离子的离子传导层（40），与离子传导层（40）接触设置的第一电极（21）和第二电极（31），以及第三电极 （35），其与离子传导层（40）接触并且能够提供金属离子，并且具有其中第一电极（21）与离子传导层（40）接触的区域的结构小于 第二电极（31）与离子传导层（40）接触的区域。 这种配置的使用减少了处于OFF状态的漏电流。

公开(公告)号：US20100133501A1

公开(公告)日：2010-06-03

申请号：US12295282

申请日：2007-03-26

申请人： Toshitsugu Sakamoto ,  Noriyuki Iguchi ,  Naoki Banno ,  Hisao Kawaura

发明人： Toshitsugu Sakamoto ,  Noriyuki Iguchi ,  Naoki Banno ,  Hisao Kawaura

IPC分类号： H01L45/00 ,  H01L29/12 ,  H01L21/34 ,  H01L21/16

CPC分类号： H01L45/085 ,  G11C13/0009 ,  G11C13/02 ,  G11C2213/56 ,  H01L27/2436 ,  H01L45/12 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675

摘要： A switching element of the present invention utilizes electro-chemical reactions to operate, and comprises ion conductive layer 54 capable of conducting metal ions, first electrode 49 arranged in contact with the ion conductive layer, and second electrode 58 for supplying metal ions to the ion conductive layer, wherein an oxygen absorption layer 55 which contains a material more prone to oxidization than the second electrode is formed in contact with the second electrode.

摘要翻译： 本发明的开关元件利用电化学反应进行操作，并且包括能够导电金属离子的离子导电层54，与离子传导层接触地布置的第一电极49和用于向离子提供金属离子的第二电极58 导电层，其中形成与第二电极接触的含有比第二电极更易于氧化的材料的氧吸收层55。

公开(公告)号：US20080211096A1

公开(公告)日：2008-09-04

申请号：US11813072

申请日：2005-12-22

申请人： Toshitsugu Sakamoto ,  Hisao Kawaura

发明人： Toshitsugu Sakamoto ,  Hisao Kawaura

IPC分类号： H01L23/48

CPC分类号： H01L27/11803 ,  H01L27/105 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

摘要： A switching element is of a configuration that includes: an ion conduction layer (40) for conducting metal ions, a first electrode (21) and a second electrode (31) provided in contact with the ion conduction layer, a third electrode (35) that can supply metal ions to the ion conduction layer, and a diffusion prevention layer (90) provided between the ion conduction layer (40) and the third electrode (35) for preventing the diffusion of metal ions from the third electrode (35) to the ion conduction layer (40). By adopting this configuration, the set state of a switch can be maintained with greater stability.

摘要翻译： 开关元件具有：用于导电金属离子的离子传导层（40），与离子传导层接触地设置的第一电极（21）和第二电极（31），第三电极（35） 可以向离子传导层供给金属离子，以及设置在离子传导层（40）与第三电极（35）之间的扩散防止层（90），用于防止金属离子从第三电极（35）扩散到 离子传导层（40）。 通过采用这种配置，可以保持开关的设定状态，同时具有更大的稳定性。

公开(公告)号：US5181093A

公开(公告)日：1993-01-19

申请号：US798136

申请日：1991-11-26

申请人： Hisao Kawaura

发明人： Hisao Kawaura

IPC分类号： H01L27/148 ,  H01L27/146 ,  H01L31/0216 ,  H04N5/335 ,  H04N5/341 ,  H04N5/361 ,  H04N5/369 ,  H04N5/372

CPC分类号： H01L27/14654

摘要： A solid state image sensor comprises a p-type semiconductor region, an n-type photoelectric conversion region formed in a surface region of the semiconductor region, an n-type charge transfer region formed in the surface of the semiconductor region separately from the photoelectric conversion region, and an electric charge read-out gate region formed between the photoelectric conversion region and the charge transfer region. A p.sup.+ thin surface layer region if formed to cover a surface of the photoelectric conversion region excluding an end portion adjacent to the electric charge read-out gate region. A gate electrode is formed above the electric charge read-out gate region. The end portion of the photoelectric conversion region not covered by the thin surface layer region, has a short length sufficient to make a potential well formed in the portion shallow under influence of potentials of the p.sup.+ thin surface layer region and the electric charge read-out gate region. Preferably, this end portion of the photoelectric conversion region is formed of a surface region having a low impurity concentration.

摘要翻译： 固态图像传感器包括p型半导体区域，形成在半导体区域的表面区域中的n型光电转换区域，与光电转换分开形成在半导体区域的表面中的n型电荷转移区域 以及形成在光电转换区域和电荷转移区域之间的电荷读出栅极区域。 如果形成为覆盖除了与电荷读出栅极区域相邻的端部之外的光电转换区域的表面的p +薄表面层区域。 在电荷读出栅极区域的上方形成栅电极。 未被薄表面层区域覆盖的光电转换区域的端部具有足以在p +薄表面层区域的电位和电荷读出的影响下在较浅的部分中良好地形成势的短的长度 门区域。 优选地，光电转换区的该端部由具有低杂质浓度的表面区域形成。

公开(公告)号：US08558211B2

公开(公告)日：2013-10-15

申请号：US12295282

申请日：2007-03-26

申请人： Toshitsugu Sakamoto ,  Noriyuki Iguchi ,  Naoki Banno ,  Hisao Kawaura

发明人： Toshitsugu Sakamoto ,  Noriyuki Iguchi ,  Naoki Banno ,  Hisao Kawaura

IPC分类号： H01L47/00

CPC分类号： H01L45/085 ,  G11C13/0009 ,  G11C13/02 ,  G11C2213/56 ,  H01L27/2436 ,  H01L45/12 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675

摘要： A switching element of the present invention utilizes electro-chemical reactions to operate, and comprises ion conductive layer 54 capable of conducting metal ions, first electrode 49 arranged in contact with the ion conductive layer, and second electrode 58 for supplying metal ions to the ion conductive layer, wherein an oxygen absorption layer 55 which contains a material more prone to oxidization than the second electrode is formed in contact with the second electrode.

摘要翻译： 本发明的开关元件利用电化学反应进行操作，并且包括能够导电金属离子的离子导电层54，与离子传导层接触地布置的第一电极49和用于向离子提供金属离子的第二电极58 导电层，其中形成与第二电极接触的含有比第二电极更容易氧化的材料的氧吸收层55。

公开(公告)号：US08203133B2

公开(公告)日：2012-06-19

申请号：US11813065

申请日：2005-12-27

申请人： Toshitsugu Sakamoto ,  Hisao Kawaura ,  Hiroshi Sunamura ,  Naoki Banno

发明人： Toshitsugu Sakamoto ,  Hisao Kawaura ,  Hiroshi Sunamura ,  Naoki Banno

IPC分类号： H01L29/04

CPC分类号： H01L45/085 ,  H01L27/10 ,  H01L27/118 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

摘要： The switching element of the present invention is of a configuration that includes: an ion conduction layer (40) that includes an oxide, a first electrode (21) and a second electrode (31) that are provided in contact with the ion conduction layer (40) and that are connected by the precipitate of metal that is supplied from the outside or for which electrical properties change due to the dissolution of precipitated metal, and a third electrode (35) provided in contact with the ion conduction layer (40) and that can supply metal ions. The use of this configuration allows the switching voltage to be set higher than in the related art.

摘要翻译： 本发明的开关元件具有以下结构：包括氧化物的离子传导层（40），设置成与离子传导层接触的第一电极（21）和第二电极（31） 40），并且由于从外部供应的金属沉淀物或由于沉淀金属的溶解而导致电特性变化的金属沉淀物和与离子传导层（40）接触设置的第三电极（35）和 可以提供金属离子。 使用该配置允许将开关电压设置为高于现有技术中的开关电压。

公开(公告)号：US07960712B2

公开(公告)日：2011-06-14

申请号：US11722982

申请日：2005-12-22

申请人： Toshitsugu Sakamoto ,  Hisao Kawaura

发明人： Toshitsugu Sakamoto ,  Hisao Kawaura

IPC分类号： H01L47/00

CPC分类号： H01L45/085 ,  H01L23/5252 ,  H01L27/2436 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/1683 ,  H01L2924/0002 ,  H01L2924/00

摘要： The switching element of the present invention includes: an ion conduction layer (4) in which metal ions can move freely; a first electrode (1) that contacts the ion conduction layer (4); and a second electrode (2) that contacts the ion conduction layer (4), that is formed such that the ion conduction layer (4) is interposed between the first electrode (1) and the second electrode (2), and that supplies metal ions to the ion conduction layer (4) or that receives metal ions from the ion conduction layer (4) to cause precipitation of the metal that corresponds to the metal ions. An introduction path (5) composed of the metal and of a prescribed width is further provided on the ion conduction layer (4) for electrically connecting the first electrode (1) and the second electrode (2). The application of voltage to the first electrode (1) relative to the second electrode (2) then causes an electrochemical reaction between the introduction path (5) and the second electrode (2) whereby the electrical characteristics are switched.

摘要翻译： 本发明的开关元件包括：离子传导层（4），其中金属离子可以自由移动; 接触离子传导层（4）的第一电极（1）; 以及与所述离子传导层（4）接触的第二电极（2），其被形成为使得所述离子传导层（4）插入在所述第一电极（1）和所述第二电极（2）之间，并且提供金属 离子到离子传导层（4），或者从离子传导层（4）接收金属离子以引起对应于金属离子的金属的析出。 在金属离子导电层（4）上进一步设置由金属构成的规定宽度的导入路径（5），用于电连接第一电极（1）和第二电极（2）。 相对于第二电极（2）向第一电极（1）施加电压然后在引入路径（5）和第二电极（2）之间引起电化学反应，由此切换电特性。

公开(公告)号：US07875883B2

公开(公告)日：2011-01-25

申请号：US10490598

申请日：2002-09-24

申请人： Toshitsugu Sakamoto ,  Masakazu Aono ,  Tsuyoshi Hasegawa ,  Tomonobu Nakayama ,  Kazuya Terabe ,  Hisao Kawaura ,  Tadahiko Sugibayashi

发明人： Toshitsugu Sakamoto ,  Masakazu Aono ,  Tsuyoshi Hasegawa ,  Tomonobu Nakayama ,  Kazuya Terabe ,  Hisao Kawaura ,  Tadahiko Sugibayashi

IPC分类号： H01L29/06

CPC分类号： G11C13/0011 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/15 ,  G11C2213/72 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/16 ,  H01L45/1633

摘要： The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.

摘要翻译： 本发明涉及用于选择存储单元的晶体管和使用固体电解质的开关。 在存储单元中，在形成在半导体衬底表面上的场效应晶体管的漏极扩散层上堆叠金属。 使用金属作为载体的固体电解质堆叠在金属上。 固体电解质通过间隙与金属接触，并且金属连接到公共接地导体。 场效应晶体管的源极连接到列地址线，并且场效应晶体管的栅极连接到行地址线。

公开(公告)号：US07750332B2

公开(公告)日：2010-07-06

申请号：US10512571

申请日：2003-04-25

申请人： Toshitsugu Sakamoto ,  Masakazu Aono ,  Tsuyoshi Hasegawa ,  Tomonobu Nakayama ,  Hiroshi Sunamura ,  Hisao Kawaura ,  Naohiko Sugibayashi

发明人： Toshitsugu Sakamoto ,  Masakazu Aono ,  Tsuyoshi Hasegawa ,  Tomonobu Nakayama ,  Hiroshi Sunamura ,  Hisao Kawaura ,  Naohiko Sugibayashi

IPC分类号： H01L47/00

CPC分类号： G11C13/0011 ,  G11C2213/15 ,  G11C2213/56 ,  G11C2213/79 ,  H01L27/101 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/144 ,  H01L45/1633 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same.A solid electrolyte switching device (10, 10′, 20, 20′) comprises a substrate (11) in which surface is coated with an insulation layer, a first interconnection layer (13) set on said substrate (11), an ion supplying layer (17) set on said first interconnection layer (13), a solid electrolyte layer (16) set on said ion supplying layer (17), an interlevel insulating layer (12) having a via hole set to cover said first interconnection layer (13), said ion supplying layer (17), and said solid electrolyte layer (16), a counter electrode layer (15) set to contact said solid electrolyte layer (16) through the via hole of said interlevel insulating layer (12), and a second interconnection layer (14) set to cover said counter electrode layer (15). The switching device can be provided in which the on state, or the off state can be arbitrarily set by the threshold voltage applied between the ion supplying layer (17) and the counter electrode layer (15), which is non-volatile, and the resistance of which in the on state is low. The switching device of the present invention is also simple and fine in structure, and hence makes it possible to provide smaller switching devices than are currently available. Further, using the switching device of the present invention as the switching device of an FPGA (30) makes it possible to provide re-programmable and fast operation FPGA (30). Using the switching device of the present invention as a memory cell of a memory device makes it possible to provide a non-volatile memory device with high programming and reading speed.

公开(公告)号：US20090242754A1

公开(公告)日：2009-10-01

申请号：US12385081

申请日：2009-03-30

申请人： Hisao Kawaura

发明人： Hisao Kawaura

IPC分类号： H01J49/26

CPC分类号： H01J49/0418 ,  B01L3/0241 ,  B01L3/502753 ,  B01L3/502761 ,  B01L2300/161 ,  B01L2400/0421 ,  B01L2400/0472

摘要： The present invention provides a microchip and a sample analysis method in which mass analysis of a separated sample can be performed with high sensitivity without damaging resolution of a microchip. A microchip includes a channel formed on a substrate and sample collection portions which are formed along the channel, apart from the channel and are apart from each other.

摘要翻译： 本发明提供一种微芯片和样品分析方法，其中可以高灵敏度地进行分离样品的质量分析，而不损害微芯片的分辨率。 微芯片包括形成在基板上的通道和沿通道形成的样品收集部分，该通道与通道分开并彼此分开。