Elastic surface wave filter for color television receiver
    42.
    发明授权
    Elastic surface wave filter for color television receiver 失效
    彩色电视接收机用弹性表面波滤波器

    公开(公告)号:US4212029A

    公开(公告)日:1980-07-08

    申请号:US825039

    申请日:1977-08-16

    CPC分类号: H04N9/647 H03H9/6489

    摘要: It has been known that a sound trap or band pass amplifier makes the group delay characteristic of a chromaticity signal component non-uniform. The present invention provides an elastic surface wave filter whose amplitude characteristic is so determined as to be adapted for a video intermediate frequency amplifier and whose group delay characteristic is so determined that the chromaticity signal component in a color composite video signal from a tuner advances further in delay time on the high frequency side than on the low frequency side in order to compensate that non-uniformity of the group delay characteristic from which the chromaticity signal component suffers.

    摘要翻译: 已知声音陷波器或带通放大器使得色度信号分量的组延迟特性不均匀。 本发明提供了一种弹性表面波滤波器,其幅度特性被确定为适用于视频中频放大器,并且其组延迟特性被确定为来自调谐器的彩色复合视频信号中的色度信号分量进一步前进 为了补偿色度信号分量遭受的群延迟特性的不均匀性,在高频侧的延迟时间比在低频侧。

    Organic electroluminescence device
    45.
    发明授权
    Organic electroluminescence device 有权
    有机电致发光器件

    公开(公告)号:US08710235B2

    公开(公告)日:2014-04-29

    申请号:US13587201

    申请日:2012-08-16

    IPC分类号: C09K11/06 H01L51/54

    摘要: A compound is represented by the following formula (I): wherein N represents a nitrogen atom; C represents a carbon atom; Pt represents a platinum atom; Z1, Z4, Z5, and Z8 represent a carbon atom or a nitrogen atom; Z2, Z3, Z6, and Z7 represent a carbon atom, a nitrogen atom, an oxygen atom or a sulfur atom; Z11 and Z16 represent a carbon atom or a nitrogen atom; Z12, Z13, Z14, Z15, Z17, Z18, Z19, and Z20 represent a carbon atom, a nitrogen atom, an oxygen atom, or a sulfur atom; Y1 and Y2 represent a single bond, an oxygen atom, a sulfur atom, a nitrogen atom; A11 represents a divalent linking group; B1 and B2 represent a single bond or a divalent linking group.

    摘要翻译: 化合物由下式(I)表示:其中N表示氮原子; C表示碳原子; Pt表示铂原子; Z 1,Z 4,Z 5和Z 8表示碳原子或氮原子; Z2,Z3,Z6和Z7表示碳原子,氮原子,氧原子或硫原子; Z 11和Z 16表示碳原子或氮原子; Z 12,Z 13,Z 14,Z 15,Z 17,Z 18,Z 19和Z 20表示碳原子,氮原子,氧原子或硫原子; Y1和Y2表示单键,氧原子,硫原子,氮原子; A11表示二价连接基团; B1和B2表示单键或二价连接基团。

    Sample surface inspection apparatus and method
    46.
    发明授权
    Sample surface inspection apparatus and method 有权
    样品表面检查装置及方法

    公开(公告)号:US08674317B2

    公开(公告)日:2014-03-18

    申请号:US13289486

    申请日:2011-11-04

    IPC分类号: G21K7/00

    摘要: The present invention provides a surface inspection method and apparatus for inspecting a surface of a sample, in which a resistive film is coated on the surface, and a beam is irradiated to the surface having the resistive film coated thereon, to thereby conduct inspection of the surface of the sample. In the surface inspection method of the present invention, a resistive film having an arbitrarily determined thickness t1 is first coated on a surface of a sample. Thereafter, a part of the resistive film having the arbitrarily determined thickness t1 is dissolved in a solvent, to thereby reduce the thickness of the resistive film to a desired level. This enables precise control of a value of resistance of the resistive film and suppresses distortion of an image to be detected.

    摘要翻译: 本发明提供了一种表面检查方法和装置,用于检查表面上涂覆有电阻膜的样品的表面,并且将光束照射到其上涂覆有电阻膜的表面,从而进行 样品表面。 在本发明的表面检查方法中,首先将具有任意确定的厚度t1的电阻膜涂覆在样品的表面上。 此后,将具有任意确定的厚度t1的电阻膜的一部分溶解在溶剂中,从而将电阻膜的厚度减小到期望的水平。 这能够精确地控制电阻膜的电阻值并抑制要检测的图像的失真。

    Semiconductor device and method of manufacturing the same
    47.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体器件及其制造方法

    公开(公告)号:US08618666B2

    公开(公告)日:2013-12-31

    申请号:US12791228

    申请日:2010-06-01

    IPC分类号: H01L29/40

    摘要: A semiconductor device includes a semiconductor substrate, electrodes separated from each other and extending from a first main surface in the direction of depth of the semiconductor substrate, and an interconnect portion coupling the electrodes to each other and extending from the first main surface in the direction of depth of the semiconductor substrate without passing through the semiconductor substrate. One of the electrodes is a through electrode passing through the semiconductor substrate to reach a second main surface. For semiconductor devices having through electrodes and vertically stacked on each other, the interconnect portion serves to enhance the degree of design freedom.

    摘要翻译: 半导体器件包括半导体衬底,彼此分离并在半导体衬底的深度方向上从第一主表面延伸的电极和将电极彼此连接并从第一主表面沿着方向 的半导体衬底的深度,而不通过半导体衬底。 其中一个电极是穿过半导体衬底到达第二主表面的通孔。 对于具有通过电极并且彼此垂直堆叠的半导体器件,互连部分用于增强设计自由度。

    Electron beam apparatus and a device manufacturing method by using said electron beam apparatus
    49.
    发明授权
    Electron beam apparatus and a device manufacturing method by using said electron beam apparatus 有权
    电子束装置和使用所述电子束装置的装置制造方法

    公开(公告)号:US08368016B1

    公开(公告)日:2013-02-05

    申请号:US12007511

    申请日:2008-01-11

    IPC分类号: H01J37/26

    摘要: An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.

    摘要翻译: 电子束装置,其中从具有阴极和阳极的电子枪发射的电子束被聚焦并照射到样品上,并且从样品发出的二次电子被引导到检测器中,该装置还包括用于优化照射的装置 从电子枪发射到样品上的电子束的优化装置可以是设置在电子枪附近的两级偏转器,其偏转并引导沿特定方向发射的电子束以与光学器件对准 电子束装置的轴方向,由于在所述阴极的晶体取向中具有更高水平的特定晶体取向的事实,在特定方向上发射的电子束相对于光轴成一定角度 电子束发射与光轴方向不对准。