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148 条记录 (耗时 0.035 秒)

    Semiconductor laser and optical disk device using the laser
    45.
    发明授权
    Semiconductor laser and optical disk device using the laser 有权
    半导体激光和光盘装置使用激光

    公开(公告)号：US06195374B1

    公开(公告)日：2001-02-27

    申请号：US09546254

    申请日：2000-04-10

    申请人： Isao Kidoguchi ,  Hideto Adachi ,  Masaya Mannoh ,  Toshiya Fukuhisa ,  Akira Takamori

    发明人： Isao Kidoguchi ,  Hideto Adachi ,  Masaya Mannoh ,  Toshiya Fukuhisa ,  Akira Takamori

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  G11B7/127 ,  H01S3/1118 ,  H01S5/0601 ,  H01S5/0615 ,  H01S5/0658 ,  H01S5/2004 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/347

    摘要： An n-type GaAs buffer layer 702, an n-type AlGaInP cladding layer 703, a multiple quantum well active layer 704 made of AlGaInP and GaInP, a first p-type AlGaInP cladding layer 705a, an optical guide layer 707, a second p-type cladding layer 705b, a p-type GaInP saturable absorption layer 706, and a third p-type AlGaInP cladding layer 707 are sequentially formed on an n-type GaAs substrate 701. In this structure, the volume of the saturable absorption layer is reduced, and the optical guide layer is provided. As the volume of the saturable absorption layer becomes smaller, the more easily the carrier density can be increased, the more easily the saturated state can be attained, and the more remarkable the saturable absorption effect becomes. Thus, a semiconductor laser having stable self-oscillation characteristics and, as a result, having a low relative noise intensity is realized.

    摘要翻译： n型GaAs缓冲层702，n型AlGaInP包层703，由AlGaInP和GaInP构成的多量子阱有源层704，第一p型AlGaInP包层705a，导光层707，第二p 型包层705b，p型GaInP可饱和吸收层706和第三p型AlGaInP包层707依次形成在n型GaAs衬底701上。在该结构中，可饱和吸收层的体积为 并且提供光导层。 随着饱和吸收层的体积变小，载流子密度越容易增加，饱和状态越容易实现，饱和吸收效果越显着。 因此，实现了具有稳定的自振动特性并因此具有低相对噪声强度的半导体激光器。

    Method for preparing single-crystal ZnSe
    49.
    发明授权
    Method for preparing single-crystal ZnSe 失效
    制备单晶ZnSe的方法

    公开(公告)号：US4866007A

    公开(公告)日：1989-09-12

    申请号：US169688

    申请日：1988-03-18

    申请人： Tsunemasa Taguchi ,  Isao Kidoguchi ,  Hirokuni Nanba

    发明人： Tsunemasa Taguchi ,  Isao Kidoguchi ,  Hirokuni Nanba

    IPC分类号： C30B1/08 ,  C30B1/02 ,  C30B13/00 ,  C30B29/48

    CPC分类号： C30B1/02 ,  C30B29/48 ,  Y10S117/906

    摘要： A method for preparing single-crystal ZnSe comprising the steps of:working polycrystalline ZnSe into a rod-shaped starting material;placing the starting material in a reaction vessel;filling the atmosphere of the reaction vessel with an inert gas, nitrogen, H.sub.2 Se gas, or a mixture thereof at from about 0.1 to about 100 Torr; andconverting the polycrystalline ZnSe starting material to single-crystal ZnSe, while maintaining a solid phase, by moving the reaction vessel at a rate of from about 0.05 to about 5 mm/day through a temperature profile consisting of a cool zone AB having a temperature T.sub.1 in the range of from about room temperature to about 100.degree. C., a temperature increasing zone BC having a temperature gradient of from about 50.degree. to about 200.degree. C./cm, a hot zone CD having a temperature T.sub.2 in the range of from about 700.degree. to about 900.degree. C., a temperature decreasing zone DE having a temperature gradient of from about -200.degree. to about -50.degree. C./cm, and a cool zone EF having a temperature T.sub.1 in the range of from about room temperature to about 100.degree. C.

    Semiconductor laser device
    50.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US07860139B2

    公开(公告)日：2010-12-28

    申请号：US12405656

    申请日：2009-03-17

    申请人： Toru Takayama ,  Koichi Hayakawa ,  Tomoya Satoh ,  Masatoshi Sasaki ,  Isao Kidoguchi

    发明人： Toru Takayama ,  Koichi Hayakawa ,  Tomoya Satoh ,  Masatoshi Sasaki ,  Isao Kidoguchi

    IPC分类号： H01S5/00

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/1064 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2301/14

    摘要： A semiconductor laser device includes an n-type clad layer, an active layer, and a p-type clad layer having a ridge and wing regions. The wing regions are provided with a first trench present on one side of the ridge and a second trench provided on the other side thereof being interposed therebetween. A reflectivity Rf at a front end face of a resonator, a reflectivity Rr at a rear end face of the resonator, a minimum value W1 of a width of the first trench in a region adjacent to the front end face, a minimum value W2 of a width of the second trench in the region adjacent to the front end face, a width W3 of the first trench at the rear end face, and a width W4 of the second trench at the rear end face satisfy Rf Wr. The ridge includes a region where a width decreases with distance from the front end side toward the rear end side.

    摘要翻译： 半导体激光器件包括n型覆层，有源层和具有脊和翼区的p型覆盖层。 翼部区域设置有在脊的一侧上存在的第一沟槽和在其另一侧上设置的第二沟槽。 谐振器的前端面的反射率Rf，谐振器的后端面的反射率Rr，与前端面相邻的区域中的第一沟槽的宽度的最小值W1，最小值W2 在与前端面相邻的区域中的第二沟槽的宽度，后端面处的第一沟槽的宽度W3和后端面处的第二沟槽的宽度W4满足Rf Wr。 脊部包括宽度随着从前端侧向后端侧的距离而减小的区域。