公开(公告)号：US06466597B1

公开(公告)日：2002-10-15

申请号：US09332163

申请日：1999-06-14

申请人： Masahiro Kume ,  Yuzaburo Ban ,  Kenji Harafuji ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Ryoko Miyanaga ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa

发明人： Masahiro Kume ,  Yuzaburo Ban ,  Kenji Harafuji ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Ryoko Miyanaga ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa

IPC分类号： G01S500

CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/34333

摘要： A nitride semiconductor laser device includes an n-type contact layer of n-type GaN and an n-type cladding layer of n-type Al0.35Ga0.65N formed on a substrate of sapphire. On the n-type cladding layer, a multiple quantum well active layer of Al0.2Ga0.8N/Al0.25Ga0.75N, a p-type leak barrier layer of p-type Al0.5Ga0.5N0.975P0.025 and a p-type cladding layer of p-type Al0.4Ga0.6N0.98P0.02 are successively formed. The p-type leak barrier layer has a wider energy gap than the n-type cladding layer, and the p-type leak barrier layer and the p-type cladding layer include phosphorus for making an acceptor level shallow with keeping a wide energy gap.

摘要翻译： 氮化物半导体激光器件包括形成在蓝宝石衬底上的n型GaN的n型接触层和n型Al0.35Ga0.65N的n型覆层。 在n型覆层上，具有Al0.2Ga0.8N / Al0.25Ga0.75N的多量子阱有源层，p型Al0.5Ga0.5N0.975P0.025的p型阻挡层和p型 型p型Al0.4Ga0.6N0.98P0.02型包层依次形成。 p型漏电阻层的能隙比n型包覆层宽，p型漏电阻层和p型覆盖层包含磷，以使受主水平浅，保持宽的能隙。

公开(公告)号：US06324200B1

公开(公告)日：2001-11-27

申请号：US09294336

申请日：1999-04-20

申请人： Satoshi Kamiyama ,  Masahiro Kume ,  Ryoko Miyanaga ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi

发明人： Satoshi Kamiyama ,  Masahiro Kume ,  Ryoko Miyanaga ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi

IPC分类号： H01S319

CPC分类号： B82Y20/00 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/343 ,  H01S5/34333

摘要： A GaN buffer layer and an Si-doped n-type GaN contact layer are formed in this order on a sapphire substrate. An n-type Al0.3Ga0.7N cladding layer, an n-type Al0.25Ga0.75N optical guide layer, a multi-quantum well active layer, in which Al0.2Ga0.8N well layers and Al0.25Ga0.75N barrier layers are alternately stacked, an Mg-doped p-type Al0.25Ga0.75N optical guide layer, a p-type Al0.4Ga0.6N0.98P0.02 cladding layer and a p-type GaN contact layer are stacked in this order on an active region on the upper surface of the n-type contact layer.

摘要翻译： 在蓝宝石衬底上依次形成GaN缓冲层和Si掺杂n型GaN接触层。 n型Al0.3Ga0.7N覆层，n型Al0.25Ga0.75N光导层，多量子阱有源层，其中Al0.2Ga0.8N阱层和Al0.25Ga0.75N势垒层 交替堆叠，将Mg掺杂的p型Al0.25Ga0.75N光导层，p型Al0.4Ga0.6N0.98P0.02包覆层和p型GaN接触层依次层叠在 在n型接触层的上表面上的有源区。

公开(公告)号：US6072762A

公开(公告)日：2000-06-06

申请号：US289984

申请日：1999-04-13

申请人： Masahiro Kume ,  Yuzaburo Ban ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Ryoko Miyanaga

发明人： Masahiro Kume ,  Yuzaburo Ban ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Ryoko Miyanaga

IPC分类号： G11B7/005 ,  G11B7/125 ,  G11B7/135 ,  G11B11/105

CPC分类号： G11B7/126 ,  G11B11/10515 ,  G11B11/10543 ,  G11B7/005 ,  G11B7/128 ,  G11B7/1369 ,  G11B7/135

摘要： Between a semiconductor laser diode and an optical disk, a collimator lens for collimating a laser beam output from the semiconductor laser diode, a liquid crystal optical shutter for attenuating the collimated beam having passed through the collimator lens, and a beam splitter for splitting reflected light from the optical disk are disposed. In addition, a collective lens for collecting the collimated beam obtained by the collimator lens on a data holding surface of the optical disk is further disposed.

摘要翻译： 在半导体激光二极管和光盘之间，用于准直半导体激光二极管输出的激光束的准直透镜，用于衰减通过准直透镜的准直光束的液晶光学快门，以及用于分离反射光的分束器 从光盘配置。 此外，还设置有用于收集由准直透镜获得的准直光束在光盘的数据保持表面上的集体透镜。

公开(公告)号：US06911351B2

公开(公告)日：2005-06-28

申请号：US10345377

申请日：2003-01-16

申请人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

发明人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/12 ,  H01L33/40 ,  H01L33/46 ,  H01S5/20 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40 ,  H01L21/00

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/405 ,  H01L33/46 ,  H01S5/2077 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4031 ,  H01S2304/00

摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w≦1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, C planes corresponding to top faces of the convexes exposed from the mask film.

摘要翻译： 本发明的氮化物半导体的制造方法包括以下步骤：在衬底上形成AlGaN的第一氮化物半导体层， / SUB，其中0≤u，v，w <= 1，u + v + w =​​ 1; 在所述第一氮化物半导体层的上部形成沿着基板表面方向间隔地延伸的多个凸部; 形成用于覆盖形成在彼此相邻的凸起之间的凹部的底部的掩模膜; 并且在所述第一氮化物半导体层上生长Al 2 O 3的第二氮化物半导体层，其中0 <= x ，y，z <= 1和x + y + z = 1，通过使用对应于从掩模膜暴露的凸起的顶面的C面作为晶种。

公开(公告)号：US06720586B1

公开(公告)日：2004-04-13

申请号：US09712127

申请日：2000-11-15

申请人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

发明人： Isao Kidoguchi ,  Akihiko Ishibashi ,  Ryoko Miyanaga ,  Gaku Sugahara ,  Masakatsu Suzuki ,  Masahiro Kume ,  Yuzaburo Ban ,  Kiyoyuki Morita ,  Ayumu Tsujimura ,  Yoshiaki Hasegawa

IPC分类号： H01L3300

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/405 ,  H01L33/46 ,  H01S5/2077 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4031 ,  H01S2304/00

摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of AluGavInwN, wherein 0≦u, v, w ≦1 and u+v+w=1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of AlxGayInzN, wherein 0≦x, y, z≦1 and x+y+z=1, by using, as a seed crystal, Cplanes corresponding to top faces of the convexes exposed from the mask film.

摘要翻译： 制造本发明的氮化物半导体的方法包括以下步骤：在衬底上形成AluGavInwN的第一氮化物半导体层，其中0≤u，v，w <= 1，u + v + w =​​ 1; 在所述第一氮化物半导体层的上部形成沿着基板表面方向间隔地延伸的多个凸部; 形成用于覆盖形成在彼此相邻的凸起之间的凹部的底部的掩模膜; 并且在第一氮化物半导体层上生长Al x Ga y In z N的第二氮化物半导体层，其中0≤x，y，z <= 1和x + y + z = 1，通过使用对应于 从掩模膜暴露的凸起的顶面。

公开(公告)号：US6030849A

公开(公告)日：2000-02-29

申请号：US94616

申请日：1998-06-15

申请人： Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Nobuyuki Uemura ,  Yuzaburo Ban ,  Masahiro Kume ,  Yoshihiro Hara ,  Isao Kidoguchi ,  Ayumu Tsujimura

发明人： Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Nobuyuki Uemura ,  Yuzaburo Ban ,  Masahiro Kume ,  Yoshihiro Hara ,  Isao Kidoguchi ,  Ayumu Tsujimura

IPC分类号： H01L21/20 ,  H01L21/205

CPC分类号： H01L21/02458 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02636 ,  H01L21/02647

摘要： On an entire surface of a substrate of sapphire having a projection with a width in the lateral direction of approximately 10 .mu.m thereon, a first semiconductor layer of Al.sub.y Ga.sub.1-y N and a second semiconductor layer of In.sub.x Ga.sub.1-x N are successively grown by MOVPE. In this manner, an island-like stacked substance including the isolated first semiconductor layer and the isolated second semiconductor layer can be formed on the top surface of the projection of the substrate.

摘要翻译： 在具有横向宽度为大约10μm的突起的蓝宝石衬底的整个表面上，通过MOVPE连续生长Al y Ga 1-y N的第一半导体层和In x Ga 1-x N的第二半导体层。 以这种方式，可以在基板的突起的顶表面上形成包括隔离的第一半导体层和隔离的第二半导体层的岛状堆叠物质。

公开(公告)号：US06940100B2

公开(公告)日：2005-09-06

申请号：US10335924

申请日：2003-01-03

申请人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Masakatsu Suzuki

发明人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Masakatsu Suzuki

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01S5/02 ,  H01S5/223 ,  H01S5/32 ,  H01S5/343 ,  H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/34333 ,  H01S5/34346

摘要： A semiconductor light-emitting device of Group III-V compound semiconductors includes a quantum well layer, which is formed over a substrate and includes a barrier layer and a well layer that are alternately stacked one upon the other. The band gap of the well layer is narrower than that of the barrier layer. The well layer contains indium and nitrogen, while the barrier layer contains aluminum and nitrogen. In this structure, a tensile strain is induced in the barrier layer, and therefore, a compressive strain induced in the quantum well layer can be reduced. As a result, a critical thickness, at which pits are created, can be increased.

摘要翻译： III-V族化合物半导体的半导体发光元件包括量子阱层，该量子阱层形成在衬底上并且包括彼此交替堆叠的势垒层和阱层。 阱层的带隙比阻挡层的带隙窄。 阱层包含铟和氮，而阻挡层含有铝和氮。 在该结构中，在阻挡层中产生拉伸应变，因此能够降低在量子阱层中产生的压缩应变。 因此，可以增加产生凹坑的临界厚度。

公开(公告)号：US06611005B2

公开(公告)日：2003-08-26

申请号：US09796702

申请日：2001-03-02

申请人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

发明人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

IPC分类号： H01L2912

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/2231 ,  H01S5/32341 ,  H01S2304/04

摘要： The method for producing a semiconductor of the present invention grows a compound semiconductor on a substrate held by a susceptor provided, in a reaction chamber in accordance with a metalorganic vapor phase epitaxy technique. The method includes the steps of: supplying a Group III source gas containing indium and a Group V source gas containing nitrogen into the reaction chamber; and mixing the Group III and Group V source gases, supplied into the reaction chamber, with each other, and supplying a rare gas as a carrier gas into the reaction chamber so as to carry the mixed source gas onto the upper surface of the substrate.

摘要翻译： 本发明的半导体的制造方法，在依靠金属有机气相外延技术在反应室内设置的基座上保持的基板上生长化合物半导体。 该方法包括以下步骤：将含有铟的III族源气体和含有氮的V族源气体供应到反应室中; 并将供应到反应室中的III族和V族源气体彼此混合，并将作为载气的稀有气体供给到反应室中，以将混合源气体输送到基板的上表面上。

公开(公告)号：US06265287B1

公开(公告)日：2001-07-24

申请号：US09179935

申请日：1998-10-28

申请人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

发明人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban

IPC分类号： H01L2120

CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/2231 ,  H01S5/32341 ,  H01S2304/04

摘要： The method for producing a semiconductor of the present invention grows a compound semiconductor on a substrate held by a susceptor provided in a reaction chamber in accordance with a metalorganic vapor phase epitaxy technique. The method includes the steps of: supplying a Group III source gas containing indium and a Group V source gas containing nitrogen into the reaction chamber; and mixing the Group III and Group V source gases, supplied into the reaction chamber, with each other, and supplying a rare gas as a carrier gas into the reaction chamber so as to carry the mixed source gas onto the upper surface of the substrate.

摘要翻译： 本发明的半导体的制造方法根据金属有机气相外延技术，在设置在反应室中的基座保持的基板上生长化合物半导体。 该方法包括以下步骤：将含有铟的III族源气体和含有氮的V族源气体供应到反应室中; 并将供应到反应室中的III族和V族源气体彼此混合，并将作为载气的稀有气体供给到反应室中，以将混合源气体输送到基板的上表面上。

公开(公告)号：US06614059B1

公开(公告)日：2003-09-02

申请号：US09479244

申请日：2000-01-07

申请人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Masakatsu Suzuki

发明人： Ayumu Tsujimura ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Yuzaburo Ban ,  Masakatsu Suzuki

IPC分类号： H01L3300

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/34333 ,  H01S5/34346

摘要： A semiconductor light-emitting device of Group III-V compound semiconductors includes a quantum well layer, which is formed over a substrate and includes a barrier layer and a well layer that are alternately stacked one upon the other. The band gap of the well layer is narrower than that of the barrier layer. The well layer contains indium and nitrogen, while the barrier layer contains aluminum and nitrogen. In this structure, a tensile strain is induced in the barrier layer, and therefore, a compressive strain induced in the quantum well layer can be reduced. As a result, a critical thickness, at which pits are created, can be increased.

摘要翻译： III-V族化合物半导体的半导体发光元件包括量子阱层，该量子阱层形成在衬底上并且包括彼此交替堆叠的势垒层和阱层。 阱层的带隙比阻挡层的带隙窄。 阱层包含铟和氮，而阻挡层含有铝和氮。 在该结构中，在阻挡层中产生拉伸应变，因此能够降低在量子阱层中产生的压缩应变。 因此，可以增加产生凹坑的临界厚度。