公开(公告)号：US08970262B2

公开(公告)日：2015-03-03

申请号：US13978373

申请日：2012-01-09

申请人： Rolf Weis ,  Franz Hirler ,  Martin Feldtkeller ,  Gerald Deboy ,  Matthias Stecher ,  Armin Willmeroth

发明人： Rolf Weis ,  Franz Hirler ,  Martin Feldtkeller ,  Gerald Deboy ,  Matthias Stecher ,  Armin Willmeroth

IPC分类号： H03B1/00 ,  H03K3/00 ,  H01L27/088 ,  H03K17/06 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/423 ,  H01L27/098 ,  H01L29/06

CPC分类号： H01L27/0207 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L27/0623 ,  H01L27/0629 ,  H01L27/0727 ,  H01L27/088 ,  H01L27/0883 ,  H01L27/0886 ,  H01L27/098 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/78 ,  H01L29/7817 ,  H01L29/7824 ,  H01L29/7825 ,  H01L29/7835 ,  H01L29/7838 ,  H03K17/06

摘要： Disclosed is a semiconductor device arrangement including a first semiconductor device having a load path, and a plurality of second transistors, each having a load path between a first and a second load terminal and a control terminal. The second transistors have their load paths connected in series and connected in series to the load path of the first transistor, each of the second transistors has its control terminal connected to the load terminal of one of the other second transistors, and one of the second transistors has its control terminal connected to one of the load terminals of the first semiconductor device.

摘要翻译： 公开了一种包括具有负载路径的第一半导体器件和多个第二晶体管的半导体器件布置，每个第二晶体管具有在第一和第二负载端子与控制端子之间的负载路径。 第二晶体管的负载路径串联连接并与第一晶体管的负载路径串联连接，每个第二晶体管的控制端连接到其它第二晶体管之一的负载端，第二晶体管中的一个 晶体管的控制端子连接到第一半导体器件的负载端子之一。

公开(公告)号：US20140062544A1

公开(公告)日：2014-03-06

申请号：US13978373

申请日：2012-01-09

申请人： Rolf Weis ,  Franz Hirler ,  Martin Feldtkeller ,  Gerald Deboy ,  Matthias Stecher ,  Armin Willmeroth

发明人： Rolf Weis ,  Franz Hirler ,  Martin Feldtkeller ,  Gerald Deboy ,  Matthias Stecher ,  Armin Willmeroth

IPC分类号： H01L27/088 ,  H03K17/06

CPC分类号： H01L27/0207 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L27/0623 ,  H01L27/0629 ,  H01L27/0727 ,  H01L27/088 ,  H01L27/0883 ,  H01L27/0886 ,  H01L27/098 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/78 ,  H01L29/7817 ,  H01L29/7824 ,  H01L29/7825 ,  H01L29/7835 ,  H01L29/7838 ,  H03K17/06

摘要： Disclosed is a semiconductor device arrangement including a first semiconductor device having a load path, and a plurality of second transistors, each having a load path between a first and a second load terminal and a control terminal. The second transistors have their load paths connected in series and connected in series to the load path of the first transistor, each of the second transistors has its control terminal connected to the load terminal of one of the other second transistors, and one of the second transistors has its control terminal connected to one of the load terminals of the first semiconductor device.

摘要翻译： 公开了一种包括具有负载路径的第一半导体器件和多个第二晶体管的半导体器件布置，每个第二晶体管具有在第一和第二负载端子与控制端子之间的负载路径。 第二晶体管的负载路径串联连接并与第一晶体管的负载路径串联连接，每个第二晶体管的控制端连接到其它第二晶体管之一的负载端，第二晶体管中的一个 晶体管的控制端子连接到第一半导体器件的负载端子之一。

公开(公告)号：US08530300B2

公开(公告)日：2013-09-10

申请号：US12842488

申请日：2010-07-23

申请人： Joachim Weyers ,  Armin Willmeroth ,  Anton Mauder ,  Franz Hirler

发明人： Joachim Weyers ,  Armin Willmeroth ,  Anton Mauder ,  Franz Hirler

IPC分类号： H01L21/8238

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/8613 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a method of forming a semiconductor device with drift regions of a first doping type and compensation regions of a second doping type, and a semiconductor device with drift regions of a first doping type and compensation regions of a second doping type.

摘要翻译： 公开了一种形成具有第一掺杂类型的漂移区和第二掺杂型的补偿区的半导体器件的方法，以及具有第一掺杂类型的漂移区和第二掺杂类型的补偿区的半导体器件。

公开(公告)号：US08492771B2

公开(公告)日：2013-07-23

申请号：US11862661

申请日：2007-09-27

申请人： Michael Rüb ,  Michael Treu ,  Armin Willmeroth ,  Franz Hirler

发明人： Michael Rüb ,  Michael Treu ,  Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/267 ,  H01L29/41775 ,  H01L29/66068

摘要： A semiconductor device includes a first semiconductor substrate of a first band-gap material and a second semiconductor substrate of a second band-gap material. The second band-gap material has a lower band-gap than the first band-gap material. A heterojunction is formed between the first semiconductor substrate and the second semiconductor substrate substantially in a first plane. The semiconductor device further includes, in a cross-section which is perpendicular to the first plane, a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type both of which extend from the second semiconductor substrate at least partially into the first semiconductor substrate. The first and second semiconductor regions are spaced in the first semiconductor substrate from each other in a direction parallel to the first plane by a first distance which is arranged in an area proximate to the heterojunction and which is larger than a second distance which is arranged in an area distal to the heterojunction.

摘要翻译： 半导体器件包括第一带隙材料的第一半导体衬底和第二带隙材料的第二半导体衬底。 第二带隙材料具有比第一带隙材料低的带隙。 基本上在第一平面中，在第一半导体衬底和第二半导体衬底之间形成异质结。 所述半导体器件还包括垂直于所述第一平面的横截面，所述第一导电类型的第一半导体区域和所述第一导电类型的第二半导体区域从所述第二半导体衬底至少部分地延伸 进入第一半导体衬底。 第一和第二半导体区域在第一半导体衬底中沿平行于第一平面的方向彼此间隔开第一距离，第一距离布置在接近异质结的区域中，并且大于第二距离 远离异质结的区域。

公开(公告)号：US20120175635A1

公开(公告)日：2012-07-12

申请号：US13275151

申请日：2011-10-17

申请人： Rolf Weis ,  Franz Hirler ,  Matthias Stecher ,  Armin Willmeroth ,  Gerald Deboy ,  Martin Feldtkeller

发明人： Rolf Weis ,  Franz Hirler ,  Matthias Stecher ,  Armin Willmeroth ,  Gerald Deboy ,  Martin Feldtkeller

IPC分类号： H01L27/06 ,  H01L29/778 ,  H01L29/788 ,  H01L29/20 ,  H01L29/161 ,  H01L27/088 ,  H01L27/098

CPC分类号： H01L27/0207 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L27/0623 ,  H01L27/0629 ,  H01L27/0727 ,  H01L27/088 ,  H01L27/0883 ,  H01L27/0886 ,  H01L27/098 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/78 ,  H01L29/7817 ,  H01L29/7824 ,  H01L29/7825 ,  H01L29/7835 ,  H01L29/7838 ,  H03K17/06

摘要： A semiconductor device arrangement includes a first semiconductor device having a load path, and a number of second transistors, each having a load path between a first and a second load terminal and a control terminal. The second transistors have their load paths connected in series and connected in series to the load path of the first transistor. Each of the second transistors has its control terminal connected to the load terminal of one of the other second transistors. One of the second transistors has its control terminal connected to one of the load terminals of the first semiconductor device.

摘要翻译： 半导体器件布置包括具有负载路径的第一半导体器件和多个第二晶体管，每个具有第一和第二负载端子与控制端子之间的负载路径。 第二晶体管的负载路径串联连接并与第一晶体管的负载路径串联连接。 每个第二晶体管的控制端连接到其它第二晶体管的负载端子。 第二晶体管中的一个具有其控制端子连接到第一半导体器件的负载端子之一。

公开(公告)号：US20110189839A1

公开(公告)日：2011-08-04

申请号：US13085196

申请日：2011-04-12

申请人： Armin Willmeroth ,  Franz Hirler

发明人： Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L21/20

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/8083

摘要： A semiconductor device with a semiconductor body and method for its production is disclosed. The semiconductor body includes drift zones of epitaxially grown semiconductor material of a first conduction type. The semiconductor body further includes charge compensation zones of a second conduction type complementing the first conduction type, which are arranged laterally adjacent to the drift zones. The charge compensation zones are provided with a laterally limited charge compensation zone doping, which is introduced into the epitaxially grown semiconductor material. The epitaxially grown semiconductor material includes 20 to 80 atomic % of the doping material of the drift zones and a doping material balance of 80 to 20 atomic % introduced by ion implantation and diffusion.

摘要翻译： 公开了一种半导体器件及其制造方法。 半导体本体包括第一导电类型的外延生长的半导体材料的漂移区。 半导体本体还包括与第一导电类型相互补充的第二导电类型的电荷补偿区，它们被布置成横向邻近漂移区。 电荷补偿区带有横向有限的电荷补偿区掺杂，其被引入外延生长的半导体材料中。 外延生长的半导体材料包括漂移区的掺杂材料的20至80原子％和通过离子注入和扩散引入的80至20原子％的掺杂材料平衡。

公开(公告)号：US07977737B2

公开(公告)日：2011-07-12

申请号：US12043429

申请日：2008-03-06

申请人： Armin Willmeroth ,  Winfried Kaindl ,  Carolin Tolksdorf ,  Anton Mauder ,  Holger Kapels ,  Gerald Deboy ,  Franz Hirler

发明人： Armin Willmeroth ,  Winfried Kaindl ,  Carolin Tolksdorf ,  Anton Mauder ,  Holger Kapels ,  Gerald Deboy ,  Franz Hirler

IPC分类号： H01L29/66 ,  H01L21/337

CPC分类号： H01L27/0733 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device with inherent capacitances and method for its production. The semiconductor device has an inherent feedback capacitance between a control electrode and a first electrode. In addition, the semiconductor device has an inherent drain-source capacitance between the first electrode and a second electrode. At least one monolithically integrated additional capacitance is connected in parallel to the inherent feedback capacitance or in parallel to the inherent drain-source capacitance. The additional capacitance comprises a first capacitor surface and a second capacitor surface opposite the first capacitor surface. The capacitor surfaces are structured conductive layers of the semiconductor device on a front side of the semiconductor body, between which a dielectric layer is located and which form at least one additional capacitor.

摘要翻译： 具有固有电容的半导体器件及其制造方法。 半导体器件在控制电极和第一电极之间具有固有的反馈电容。 此外，半导体器件在第一电极和第二电极之间具有固有的漏极 - 源极电容。 至少一个单片集成附加电容与固有反馈电容并联连接，或与固有漏 - 源电容并联连接。 附加电容包括与第一电容器表面相对的第一电容器表面和第二电容器表面。 电容器表面是半导体器件的前侧上的半导体器件的结构化导电层，介电层位于其之间，并形成至少一个附加电容器。

公开(公告)号：US07777278B2

公开(公告)日：2010-08-17

申请号：US12020197

申请日：2008-01-25

申请人： Franz Hirler ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Gerald Deboy ,  Ralf Henninger ,  Uwe Wahl

发明人： Franz Hirler ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Gerald Deboy ,  Ralf Henninger ,  Uwe Wahl

IPC分类号： H01L21/336

CPC分类号： H01L29/407 ,  H01L29/0847 ,  H01L29/0852 ,  H01L29/404 ,  H01L29/4175 ,  H01L29/4232 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7393 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/8611 ,  H01L29/872

摘要： A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.

摘要翻译： 描述半导体部件。 在一个实施例中，半导体部件包括具有第一侧和第二侧的半导体本体。 提供了漂移区，其布置在第一侧下方的半导体本体中，并且在第一和第二掺杂末端区之间沿半导体本体的第一横向方向延伸。 设置至少一个场电极，其布置在漂移区中，从第一侧延伸到漂移区，并且以与半导体本体电绝缘的方式配置。

公开(公告)号：US07709891B2

公开(公告)日：2010-05-04

申请号：US12019271

申请日：2008-01-24

申请人： Anton Mauder ,  Stefan Sedlmaier ,  Franz Hirler ,  Armin Willmeroth ,  Gerhard Noebauer

发明人： Anton Mauder ,  Stefan Sedlmaier ,  Franz Hirler ,  Armin Willmeroth ,  Gerhard Noebauer

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7831 ,  H03K17/04206 ,  H03K17/063 ,  H03K17/567

摘要： A component arrangement. One embodiment includes a power semiconductor component having a drift zone arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. A capacitive storage arrangement is coupled to the drift control zone. A charging circuit is coupled between the first component zone and the capacitive storage arrangement.

摘要翻译： 组件安排。 一个实施例包括具有布置在第一和第二组件区之间的漂移区的功率半导体组件。 漂移控制区域布置成与漂移区相邻并且通过介电层与漂移区介电绝缘。 电容存储装置耦合到漂移控制区。 充电电路耦合在第一组件区域和电容存储装置之间。

公开(公告)号：US20090189240A1

公开(公告)日：2009-07-30

申请号：US12019759

申请日：2008-01-25

申请人： Armin Willmeroth ,  Anton Mauder ,  Michael Rueb ,  Franz Hirler

发明人： Armin Willmeroth ,  Anton Mauder ,  Michael Rueb ,  Franz Hirler

IPC分类号： H01L23/58 ,  H01L21/76

CPC分类号： H01L29/402 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/41766 ,  H01L29/47 ,  H01L29/7396 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component with at least one field plate. One embodiment provides the field plate to make contact with the semiconductor body at a connection contact. The semiconductor body has in the region of the connection contact a doping concentration that is less than 5·1017 cm−3.

摘要翻译： 具有至少一个场板的半导体部件。 一个实施例提供了场板，以在连接接触处与半导体本体接触。 半导体本体在连接区域中具有小于5.1017cm-3的掺杂浓度。