公开(公告)号：US20110001126A1

公开(公告)日：2011-01-06

申请号：US12801910

申请日：2010-07-01

申请人： Takeshi Kamikawa ,  Masataka Ohta

发明人： Takeshi Kamikawa ,  Masataka Ohta

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L29/20

CPC分类号： H01L21/0254 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0262

摘要： A nitride semiconductor chip is provided that offers enhanced luminous efficacy and an increased yield as a result of an improved EL emission pattern and improved surface morphology (flatness). This nitride semiconductor laser chip (nitride semiconductor chip) includes a GaN substrate having a principal growth plane and individual nitride semiconductor layers formed on the principal growth plane of the GaN substrate. The principal growth plane is a plane having an off angle in the a-axis direction relative to the m plane, and the individual nitride semiconductor layers include a lower clad layer of AlGaN. This lower clad layer is formed in contact with the principal growth plane of the GaN substrate.

摘要翻译： 提供了一种氮化物半导体芯片，其由于改进的EL发射图案和改进的表面形貌（平坦度）而提供增强的发光效率和增加的产量。 该氮化物半导体激光器芯片（氮化物半导体芯片）包括具有主生长面的GaN衬底和形成在GaN衬底的主生长平面上的各个氮化物半导体层。 主生长面是相对于m面在a轴方向上具有偏角的平面，各个氮化物半导体层包括AlGaN的下包层。 该下包层形成为与GaN衬底的主生长平面接触。

公开(公告)号：US20100301348A1

公开(公告)日：2010-12-02

申请号：US12801218

申请日：2010-05-27

申请人： Takeshi Kamikawa ,  Masataka Ohta

发明人： Takeshi Kamikawa ,  Masataka Ohta

IPC分类号： H01L29/20 ,  H01L21/20 ,  H01L33/00

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/32341 ,  H01S5/34333

摘要： A nitride semiconductor chip is provided that offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor chip) has an n-type GaN substrate having as a principal growth plane a plane having an off-angle in the a-axis direction relative to the m plane, and a nitride semiconductor layer formed on the principal growth plane of the n-type GaN substrate. The n-type GaN substrate includes a depressed portion (carved region), which is carved from the principal growth plane in the thickness direction, and an uncarved region, which is a region not carved. The nitride semiconductor layer formed on the n-type GaN substrate has a gradient thickness region whose thickness decreases in a gradient fashion toward the depressed portion (carved region) and an emission portion formation region whose thickness varies very little. In the emission portion formation region 6, a ridge portion is formed.

摘要翻译： 提供了一种氮化物半导体芯片，其由于改进的EL发射图案而提供增强的发光效率。 氮化物半导体激光器芯片（氮化物半导体芯片）具有n型GaN衬底，其具有作为主生长面的相对于m面在a轴方向上具有偏角的平面，并且形成在氮化物半导体芯片 n型GaN衬底的主生长面。 n型GaN衬底包括在厚度方向上从主生长面雕刻的凹部（雕刻区域）和未雕刻的区域的未雕刻区域。 形成在n型GaN衬底上的氮化物半导体层具有梯度梯度减小梯度的梯度厚度区域，其朝向凹部（雕刻区域）和厚度变化很小的发射部分形成区域。 在发射部分形成区域6中，形成脊部。

公开(公告)号：US20100243988A1

公开(公告)日：2010-09-30

申请号：US12659911

申请日：2010-03-25

申请人： Takeshi Kamikawa ,  Masataka Ohta

发明人： Takeshi Kamikawa ,  Masataka Ohta

IPC分类号： H01L33/04 ,  H01L33/28

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/028 ,  H01S5/168 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/4031 ,  H01S2304/04

摘要： A nitride semiconductor light-emitting chip offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor light-emitting chip) has a nitride semiconductor substrate having a principal growth plane, and nitride semiconductor layers grown on the principal growth plane of the nitride semiconductor substrate. The principal growth plane of the GaN substrate is a plane having off-angles in both the a- and c-axis directions relative to an m plane, and the off-angle in the a-axis direction is larger than the off-angle in the c-axis direction.

摘要翻译： 氮化物半导体发光芯片由于改善的EL发射图案而提供增强的发光效率。 氮化物半导体激光器芯片（氮化物半导体发光芯片）具有主氮化物半导体衬底，其具有主生长面，氮化物半导体层在氮化物半导体衬底的主生长面上生长。 GaN衬底的主生长平面是在a轴和c轴方向上相对于m平面具有偏角的平面，并且在a轴方向上的偏离角大于偏离角度 c轴方向。

公开(公告)号：US20100240161A1

公开(公告)日：2010-09-23

申请号：US12659557

申请日：2010-03-12

申请人： Takeshi Kamikawa ,  Masataka Ohta

发明人： Takeshi Kamikawa ,  Masataka Ohta

IPC分类号： H01L21/20

CPC分类号： H01L21/0254 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02642 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/32341 ,  H01S2304/04

摘要： A method for fabricating a nitride semiconductor light-emitting device includes the steps of creating a recessed region in a nitride semiconductor substrate having a nonpolar plane or a semipolar plane, and providing a nitride semiconductor thin film including an n-type nitride semiconductor thin film, an active layer and a p-type nitride semiconductor thin film on the nitride semiconductor substrate. The p-type nitride semiconductor thin film is grown at a growth temperature higher than or equal to 700° C. and lower than 900° C.

摘要翻译： 一种制造氮化物半导体发光器件的方法包括以下步骤：在具有非极性平面或半极性面的氮化物半导体衬底中形成凹陷区域，并且提供包括n型氮化物半导体薄膜的氮化物半导体薄膜， 氮化物半导体衬底上的有源层和p型氮化物半导体薄膜。 p型氮化物半导体薄膜在高于或等于700℃且低于900℃的生长温度下生长

公开(公告)号：US20100002738A1

公开(公告)日：2010-01-07

申请号：US12458128

申请日：2009-07-01

申请人： Teruyoshi Takakura ,  Yuhzoh Tsuda ,  Masataka Ohta

发明人： Teruyoshi Takakura ,  Yuhzoh Tsuda ,  Masataka Ohta

IPC分类号： H01S5/00

CPC分类号： H01S5/32341 ,  H01S5/028 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/3202

摘要： It is intended to improve operation characteristics of a nitride-based semiconductor light-emitting device including a nitride-based semiconductor crystal substrate having a main surface of a non-polarity plane.A nitride-based semiconductor light-emitting device includes a nitride-based semiconductor crystal substrate and semiconductor stacked-layer structure of crystalline nitride-based semiconductor formed on a main surface of the substrate, wherein the semiconductor staked-layer structure includes an active layer sandwiched between an n-type layer and a p-type layer, the main surface of the substrate has a crystallographic plane tilted from a {10-10} plane of the nitride-based semiconductor crystal by an angle of more than −0.5° and less than −0.05° or more than +0.05° and less than +0.5° about a axis.

摘要翻译： 旨在改善包括具有非极性平面的主表面的氮化物基半导体晶体基板的氮化物基半导体发光器件的操作特性。 氮化物系半导体发光元件包括氮化物系半导体晶体基板和形成在基板的主面上的结晶性氮化物系半导体的半导体层叠结构，其中半导体淀积层结构包括夹层的活性层 在n型层和p型层之间，衬底的主表面具有从氮化物类半导体晶体的{10-10}面倾斜大于-0.5°以下的角度的结晶面 大于-0.05°或大于+ 0.05°且小于+0.5°。

公开(公告)号：US06839558B2

公开(公告)日：2005-01-04

申请号：US09923539

申请日：2001-08-08

申请人： Mikiya Namura ,  Masataka Ohta ,  Toshiro Suzuki

发明人： Mikiya Namura ,  Masataka Ohta ,  Toshiro Suzuki

IPC分类号： H04B7/26 ,  H04W24/02 ,  H04Q7/20

CPC分类号： H04W24/04

摘要： A mobile communication system which includes an exchange, a plurality of base stations, and a plurality of radio telephone sets communicatable with the associated base stations. In order to suppress or reduce call loss caused by traffic congestion or by faulty one of the base stations, an uncommunicatable service area of the faulty base station is covered by the other working base stations. The exchange detects operation states of all the base stations, searches a base-station state pattern table within the exchange for base-station control data suitable for the operation states to read out the base-station control pattern, and transmits the read-out base-station control data to the base stations to cause radio service areas of the base stations to be set to have desired radiation patterns according to the read-out base-station control data.

公开(公告)号：US06750322B2

公开(公告)日：2004-06-15

申请号：US09891053

申请日：2001-06-25

申请人： Hiraku Itadani ,  Tetsuo Takimura ,  Takao Nakamura ,  Masahiko Kobayashi ,  Ken-Ichi Tanaka ,  Yusuke Hidaka ,  Masataka Ohta

发明人： Hiraku Itadani ,  Tetsuo Takimura ,  Takao Nakamura ,  Masahiko Kobayashi ,  Ken-Ichi Tanaka ,  Yusuke Hidaka ,  Masataka Ohta

IPC分类号： C07K14705

CPC分类号： G01N33/502 ,  C07K14/705 ,  G01N2333/72

摘要： The present invention has provided a human-derived novel G protein-coupled receptor protein expressed in the brain, rat-derived protein corresponding to it, and their genes. Use of the receptors makes it possible to screen their ligands and compounds that are candidates for medicines. These ligands and candidate compounds would be useful in the diagnosis and treatment of diseases arising from disorders of signal transduction pathway mediated by the G protein-coupled receptor of the invention.

摘要翻译： 通过筛选人海马文库来分离编码人衍生的G蛋白偶联受体蛋白质的全长cDNA。 此外，分离与人源cDNA相对应的来自大鼠的cDNA。 由这些cDNA编码的蛋白质具有降低组胺刺激下细胞内cAMP浓度的活性。 这些蛋白质可用作筛选其配体或筛选能够调节来自上述蛋白质的信号转导的药物的候选化合物的工具。

公开(公告)号：US06278712B1

公开(公告)日：2001-08-21

申请号：US09070736

申请日：1998-05-01

申请人： Masatoshi Takihiro ,  Takeshi Ishizaki ,  Shuji Ohno ,  Masataka Ohta ,  Naoya Ikeda

发明人： Masatoshi Takihiro ,  Takeshi Ishizaki ,  Shuji Ohno ,  Masataka Ohta ,  Naoya Ikeda

IPC分类号： H04L1228

CPC分类号： H04L47/822 ,  H04L47/2416 ,  H04L47/2433 ,  H04L47/245 ,  H04L47/70 ,  H04L47/724 ,  H04L47/746 ,  H04L47/805 ,  H04L47/826

摘要： A user terminal sends a resource reservation request message in which time information indicative of time to perform a communication is designated to a switching node to which the self user terminal is linked. The switching node manages a reservation state of each of resources which can be used by the self switching node among resources of a network together with time information indicative of time when a communication using the resource is performed. When the resource reservation request message is received, an unreserved resource is obtained at a time indicated by the time information designated in the resource reservation request message, the obtained resource is reserved, and a resource reservation result notice message indicative of the reservation result is returned to the user terminal. A resource management server is also provided so as to reserve a network resource with a simple operation. The reservation can be performed in consideration of priority and cost of a communication. Reservation information can be always recognized by a client. When resource reservation is failed, an alternative plan is automatically calculated and presented.

摘要翻译： 用户终端发送资源预留请求消息，在该资源预留请求消息中，指示用于执行通信的时间的信息被指定给自身用户终端所链接的交换节点。 交换节点管理网络资源中的自交换节点可以使用的每个资源的预留状态以及指示在执行使用该资源的通信的时间的时间信息。 当接收到资源预留请求消息时，在由资源预留请求消息中指定的时间信息指示的时间获得未预留的资源，所获得的资源被保留，并且返回表示预约结果的资源预约结果通知消息 到用户终端。 还提供资源管理服务器，以便通过简单的操作保留网络资源。 考虑到通信的优先级和成本，可以进行预约。 预订信息可以始终被客户识别。 当资源预留失败时，会自动计算并呈现替代计划。

公开(公告)号：US4687912A

公开(公告)日：1987-08-18

申请号：US815818

申请日：1986-01-02

申请人： Masataka Ohta

发明人： Masataka Ohta

IPC分类号： G06K7/10 ,  G06K7/00 ,  G06K7/016 ,  G06K7/14 ,  G06F7/10

CPC分类号： G06K7/1486 ,  G06K7/0166 ,  G06K7/14

摘要： Bar code reading method and apparatus which is insensitive to scanning speed and to minor variations in width, caused by inaccurate printing, between like bars and spaces and which is suitable in particular to hand held manual scanners. The width of all the bars and spaces in a bar code are measured and stored in a memory. Selected ones of the stored measured width values are summed up to provide one or more sum values. For each bar and space whose binary status "0" or "1" is to be determined, a respective quotient is generated by dividing one of the stored sum values by the measured width of the bar or space whose binary status is being determined. The quotient, thus obtained, is compared to a prestored reference constant and on that basis the binary status of the bar or space is ascertained.

摘要翻译： 条形码读取方法和装置对扫描速度不敏感，并且由类似的条和间隔之间的不准确的打印引起的宽度的微小变化，并且特别适用于手持式手动扫描仪。 条形码中所有条形和空格的宽度被测量并存储在存储器中。 存储的所测量的宽度值中的所选择的值被求和以提供一个或多个和值。 对于要确定其二进制状态“0”或“1”的每个条和空间，通过将存储的和值中的一个除以测量其二进制状态正在确定的条或空间的宽度来生成相应的商。 如此获得的商与预先存储的参考常数进行比较，并且在此基础上确定条或空间的二进制状态。