公开(公告)号：US08344413B2

公开(公告)日：2013-01-01

申请号：US12801218

申请日：2010-05-27

申请人： Takeshi Kamikawa ,  Masataka Ohta

发明人： Takeshi Kamikawa ,  Masataka Ohta

IPC分类号： H01L33/00

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/32341 ,  H01S5/34333

摘要： A nitride semiconductor chip is provided that offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor chip) has an n-type GaN substrate having as a principal growth plane a plane having an off-angle in the a-axis direction relative to the m plane, and a nitride semiconductor layer formed on the principal growth plane of the n-type GaN substrate. The n-type GaN substrate includes a depressed portion (carved region), which is carved from the principal growth plane in the thickness direction, and an uncarved region, which is a region not carved. The nitride semiconductor layer formed on the n-type GaN substrate has a gradient thickness region whose thickness decreases in a gradient fashion toward the depressed portion (carved region) and an emission portion formation region whose thickness varies very little. In the emission portion formation region 6, a ridge portion is formed.

摘要翻译： 提供了一种氮化物半导体芯片，其由于改进的EL发射图案而提供增强的发光效率。 氮化物半导体激光器芯片（氮化物半导体芯片）具有n型GaN衬底，其具有作为主生长面的相对于m面在a轴方向上具有偏角的平面，并且形成在氮化物半导体芯片 n型GaN衬底的主生长面。 n型GaN衬底包括在厚度方向上从主生长面雕刻的凹部（雕刻区域）和未雕刻的区域的未雕刻区域。 形成在n型GaN衬底上的氮化物半导体层具有梯度梯度减小梯度的梯度厚度区域，其朝向凹部（雕刻区域）和厚度变化很小的发射部分形成区域。 在发射部分形成区域6中，形成脊部。

公开(公告)号：US20110001126A1

公开(公告)日：2011-01-06

申请号：US12801910

申请日：2010-07-01

申请人： Takeshi Kamikawa ,  Masataka Ohta

发明人： Takeshi Kamikawa ,  Masataka Ohta

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L29/20

CPC分类号： H01L21/0254 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0262

摘要： A nitride semiconductor chip is provided that offers enhanced luminous efficacy and an increased yield as a result of an improved EL emission pattern and improved surface morphology (flatness). This nitride semiconductor laser chip (nitride semiconductor chip) includes a GaN substrate having a principal growth plane and individual nitride semiconductor layers formed on the principal growth plane of the GaN substrate. The principal growth plane is a plane having an off angle in the a-axis direction relative to the m plane, and the individual nitride semiconductor layers include a lower clad layer of AlGaN. This lower clad layer is formed in contact with the principal growth plane of the GaN substrate.

摘要翻译： 提供了一种氮化物半导体芯片，其由于改进的EL发射图案和改进的表面形貌（平坦度）而提供增强的发光效率和增加的产量。 该氮化物半导体激光器芯片（氮化物半导体芯片）包括具有主生长面的GaN衬底和形成在GaN衬底的主生长平面上的各个氮化物半导体层。 主生长面是相对于m面在a轴方向上具有偏角的平面，各个氮化物半导体层包括AlGaN的下包层。 该下包层形成为与GaN衬底的主生长平面接触。

公开(公告)号：US20100301348A1

公开(公告)日：2010-12-02

申请号：US12801218

申请日：2010-05-27

申请人： Takeshi Kamikawa ,  Masataka Ohta

发明人： Takeshi Kamikawa ,  Masataka Ohta

IPC分类号： H01L29/20 ,  H01L21/20 ,  H01L33/00

CPC分类号： H01L21/02389 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/32341 ,  H01S5/34333

摘要： A nitride semiconductor chip is provided that offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor chip) has an n-type GaN substrate having as a principal growth plane a plane having an off-angle in the a-axis direction relative to the m plane, and a nitride semiconductor layer formed on the principal growth plane of the n-type GaN substrate. The n-type GaN substrate includes a depressed portion (carved region), which is carved from the principal growth plane in the thickness direction, and an uncarved region, which is a region not carved. The nitride semiconductor layer formed on the n-type GaN substrate has a gradient thickness region whose thickness decreases in a gradient fashion toward the depressed portion (carved region) and an emission portion formation region whose thickness varies very little. In the emission portion formation region 6, a ridge portion is formed.

摘要翻译： 提供了一种氮化物半导体芯片，其由于改进的EL发射图案而提供增强的发光效率。 氮化物半导体激光器芯片（氮化物半导体芯片）具有n型GaN衬底，其具有作为主生长面的相对于m面在a轴方向上具有偏角的平面，并且形成在氮化物半导体芯片 n型GaN衬底的主生长面。 n型GaN衬底包括在厚度方向上从主生长面雕刻的凹部（雕刻区域）和未雕刻的区域的未雕刻区域。 形成在n型GaN衬底上的氮化物半导体层具有梯度梯度减小梯度的梯度厚度区域，其朝向凹部（雕刻区域）和厚度变化很小的发射部分形成区域。 在发射部分形成区域6中，形成脊部。

公开(公告)号：US20100243988A1

公开(公告)日：2010-09-30

申请号：US12659911

申请日：2010-03-25

申请人： Takeshi Kamikawa ,  Masataka Ohta

发明人： Takeshi Kamikawa ,  Masataka Ohta

IPC分类号： H01L33/04 ,  H01L33/28

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/028 ,  H01S5/168 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/4031 ,  H01S2304/04

摘要： A nitride semiconductor light-emitting chip offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor light-emitting chip) has a nitride semiconductor substrate having a principal growth plane, and nitride semiconductor layers grown on the principal growth plane of the nitride semiconductor substrate. The principal growth plane of the GaN substrate is a plane having off-angles in both the a- and c-axis directions relative to an m plane, and the off-angle in the a-axis direction is larger than the off-angle in the c-axis direction.

摘要翻译： 氮化物半导体发光芯片由于改善的EL发射图案而提供增强的发光效率。 氮化物半导体激光器芯片（氮化物半导体发光芯片）具有主氮化物半导体衬底，其具有主生长面，氮化物半导体层在氮化物半导体衬底的主生长面上生长。 GaN衬底的主生长平面是在a轴和c轴方向上相对于m平面具有偏角的平面，并且在a轴方向上的偏离角大于偏离角度 c轴方向。

公开(公告)号：US20100240161A1

公开(公告)日：2010-09-23

申请号：US12659557

申请日：2010-03-12

申请人： Takeshi Kamikawa ,  Masataka Ohta

发明人： Takeshi Kamikawa ,  Masataka Ohta

IPC分类号： H01L21/20

CPC分类号： H01L21/0254 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02642 ,  H01S5/0425 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/32341 ,  H01S2304/04

摘要： A method for fabricating a nitride semiconductor light-emitting device includes the steps of creating a recessed region in a nitride semiconductor substrate having a nonpolar plane or a semipolar plane, and providing a nitride semiconductor thin film including an n-type nitride semiconductor thin film, an active layer and a p-type nitride semiconductor thin film on the nitride semiconductor substrate. The p-type nitride semiconductor thin film is grown at a growth temperature higher than or equal to 700° C. and lower than 900° C.

摘要翻译： 一种制造氮化物半导体发光器件的方法包括以下步骤：在具有非极性平面或半极性面的氮化物半导体衬底中形成凹陷区域，并且提供包括n型氮化物半导体薄膜的氮化物半导体薄膜， 氮化物半导体衬底上的有源层和p型氮化物半导体薄膜。 p型氮化物半导体薄膜在高于或等于700℃且低于900℃的生长温度下生长

公开(公告)号：US08742444B2

公开(公告)日：2014-06-03

申请号：US13572178

申请日：2012-08-10

申请人： Masataka Ohta ,  Takeshi Kamikawa

发明人： Masataka Ohta ,  Takeshi Kamikawa

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/483 ,  H01L33/507 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A semiconductor light-emitting device (A) having a simple configuration whereby it is possible to easily and accurately confirm whether or not ultraviolet light is being emitted, the semiconductor light-emitting device comprising: a semiconductor light-emitting element (1) for emitting ultraviolet light in an ultraviolet or deep ultraviolet region; a cap part (6) having a through-hole (63) in the top part through which ultraviolet light passes and encircling the semiconductor light-emitting element (1); a translucent cover (7) for transmitting ultraviolet light, the translucent cover being disposed so as to hermetically close up the through-hole (63); and a UV-excited phosphor (8) which is excited by ultraviolet light and which emits visible light, the UV-excited phosphor being disposed inside the cap part (6).

摘要翻译： 一种半导体发光装置（A），其具有简单的结构，由此可以容易且准确地确认是否发出紫外线，该半导体发光装置包括：用于发射的半导体发光元件（1） 在紫外线或深紫外线区域的紫外线; 帽部分（6），其在所述顶部部分中具有通孔（63），紫外线穿过所述通孔（63）并围绕所述半导体发光元件（1）; 用于透射紫外光的半透明盖（7），所述半透明盖设置成气密地关闭所述通孔（63）; 和紫外线激发的荧光体（8），所述紫外线激发的荧光体被紫外线激发并发出可见光，所述紫外线激发荧光体设置在所述帽部（6）的内部。

公开(公告)号：US08664688B2

公开(公告)日：2014-03-04

申请号：US12659911

申请日：2010-03-25

申请人： Takeshi Kamikawa ,  Masataka Ohta

发明人： Takeshi Kamikawa ,  Masataka Ohta

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/028 ,  H01S5/168 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/4031 ,  H01S2304/04

摘要： A nitride semiconductor light-emitting chip offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor light-emitting chip) has a nitride semiconductor substrate having a principal growth plane, and nitride semiconductor layers grown on the principal growth plane of the nitride semiconductor substrate. The principal growth plane of the GaN substrate is a plane having off-angles in both the a- and c-axis directions relative to an m plane, and the off-angle in the a-axis direction is larger than the off-angle in the c-axis direction.

摘要翻译： 氮化物半导体发光芯片由于改善的EL发射图案而提供增强的发光效率。 氮化物半导体激光器芯片（氮化物半导体发光芯片）具有主氮化物半导体衬底，其具有主生长面，氮化物半导体层在氮化物半导体衬底的主生长面上生长。 GaN衬底的主生长平面是在a轴和c轴方向上相对于m平面具有偏角的平面，并且在a轴方向上的偏离角大于偏离角度 c轴方向。

公开(公告)号：US20130043499A1

公开(公告)日：2013-02-21

申请号：US13572178

申请日：2012-08-10

申请人： Masataka Ohta ,  Takeshi Kamikawa

发明人： Masataka Ohta ,  Takeshi Kamikawa

IPC分类号： H01L33/60

CPC分类号： H01L33/483 ,  H01L33/507 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014

摘要： A semiconductor light-emitting device (A) having a simple configuration whereby it is possible to easily and accurately confirm whether or not ultraviolet light is being emitted, the semiconductor light-emitting device comprising: a semiconductor light-emitting element (1) for emitting ultraviolet light in an ultraviolet or deep ultraviolet region; a cap part (6) having a through-hole (63) in the top part through which ultraviolet light passes and encircling the semiconductor light-emitting element (1); a translucent cover (7) for transmitting ultraviolet light, the translucent cover being disposed so as to hermetically close up the through-hole (63); and a UV-excited phosphor (8) which is excited by ultraviolet light and which emits visible light, the UV-excited phosphor being disposed inside the cap part (6).

摘要翻译： 一种半导体发光装置（A），其具有简单的结构，由此可以容易且准确地确认是否发出紫外线，该半导体发光装置包括：用于发射的半导体发光元件（1） 在紫外线或深紫外线区域的紫外线; 帽部分（6），其在所述顶部部分中具有通孔（63），紫外线穿过所述通孔（63）并围绕所述半导体发光元件（1）; 用于透射紫外光的半透明盖（7），所述半透明盖设置成气密地关闭通孔（63）; 和紫外线激发的荧光体（8），所述紫外线激发的荧光体被紫外线激发并发出可见光，所述紫外线激发荧光体设置在所述帽部（6）的内部。

公开(公告)号：US20110042646A1

公开(公告)日：2011-02-24

申请号：US12805848

申请日：2010-08-20

申请人： Masataka Ohta ,  Takeshi Kamikawa

发明人： Masataka Ohta ,  Takeshi Kamikawa

IPC分类号： H01L29/12 ,  H01L29/20 ,  H01L21/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/12 ,  H01L33/16 ,  H01L33/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/16152 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0217 ,  H01S5/02212 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3202 ,  H01S5/3407 ,  H01S2304/04 ,  H01L2924/00014

摘要： A nitride semiconductor chip allows enhancement of luminous efficacy. The nitride semiconductor laser chip (nitride semiconductor chip) has a GaN substrate, which has a principal growth plane, and an active layer, which is formed on the principal growth plane of the GaN substrate and which has a quantum well structure including a well layer and a barrier layer. The principal growth plane is a plane having an off angle in the a-axis direction relative to the m plane. The barrier layer is formed of AlGaN, which is a nitride semiconductor containing Al.

摘要翻译： 氮化物半导体芯片可以提高发光效率。 氮化物半导体激光器芯片（氮化物半导体芯片）具有主要生长面的GaN衬底和形成在GaN衬底的主生长平面上并且具有包括阱层的量子阱结构的有源层 和阻挡层。 主生长面是相对于m面在a轴方向上具有偏角的平面。 阻挡层由AlGaN构成，AlGaN是含有Al的氮化物半导体。

公开(公告)号：US08803165B2

公开(公告)日：2014-08-12

申请号：US12216295

申请日：2008-07-02

申请人： Takeshi Kamikawa

发明人： Takeshi Kamikawa

IPC分类号： H01L27/15

CPC分类号： H01S5/32341

摘要： A nitride semiconductor light emitting device includes an n-type GaN substrate (101) that is a nitride semiconductor substrate, a nitride semiconductor layer including a p-type nitride semiconductor layer formed on the n-type GaN substrate (101). The p-type nitride semiconductor layer includes a p-type AlGaInN contact layer (108), a p-type AlGaInN cladding layer (107) under the p-type AlGaInN contact layer (108), and a p-type AlGaInN layer (106). A protection film (113) made of a silicon nitride film is formed above a current injection region formed in the p-type nitride semiconductor layer.

摘要翻译： 氮化物半导体发光器件包括作为氮化物半导体衬底的n型GaN衬底（101），包括形成在n型GaN衬底（101）上的p型氮化物半导体层的氮化物半导体层。 p型氮化物半导体层包括p型AlGaInN接触层（108），p型AlGaInN接触层（108）下的p型AlGaInN覆盖层（107）和p型AlGaInN层（106） ）。 在形成在p型氮化物半导体层中的电流注入区域的上方形成由氮化硅膜形成的保护膜（113）。