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    Polarized semiconductor light emitting device
    41.
    发明授权
    Polarized semiconductor light emitting device 失效
    极化半导体发光器件

    公开(公告)号：US07408201B2

    公开(公告)日：2008-08-05

    申请号：US10804314

    申请日：2004-03-19

    申请人： Matthijs H. Keuper ,  Michael R. Krames ,  Gerd O. Mueller

    发明人： Matthijs H. Keuper ,  Michael R. Krames ,  Gerd O. Mueller

    IPC分类号： G02F1/133

    CPC分类号： H04N9/3152 ,  H01L33/0004 ,  H01L33/16 ,  H01L33/18 ,  H01L33/32 ,  H01L33/44 ,  H01L33/507 ,  H01L33/60

    摘要： A light emitting device includes a light emitting diode (LED), a concentrator element, such as a compound parabolic concentrator, and a wavelength converting material, such as a phosphor. The concentrator element receives light from the LED and emits the light from an exit surface, which is smaller than the entrance surface. The wavelength converting material is, e.g., disposed over the exit surface. The radiance of the light emitting diode is preserved or increased despite the isotropic re-emitted light by the wavelength converting material. In one embodiment, the polarized light from a polarized LED is provided to a polarized optical system, such as a microdisplay. In another embodiment, the orthogonally polarized light from two polarized LEDs is combined, e.g., via a polarizing beamsplitter, and is provided to non-polarized optical system, such as a microdisplay. If desired, a concentrator element may be disposed between the beamsplitter and the microdisplay.

    摘要翻译： 发光器件包括发光二极管（LED），诸如复合抛物面聚光器的聚光元件，以及诸如荧光体的波长转换材料。 集中器元件从LED接收光，并从出射表面发射光，该出射表面小于入射面。 波长转换材料例如设置在出射表面上。 即使波长转换材料具有各向同性的再发射光，发光二极管的辐射也被保留或增加。 在一个实施例中，来自偏振LED的偏振光被提供给诸如微显示器的偏振光学系统。 在另一个实施例中，来自两个偏振LED的正交偏振光例如经由偏振分束器组合，并被提供给诸如微显示器之类的非偏振光学系统。 如果需要，可以在分束器和微显示器之间设置集中器元件。

    Semiconductor light emitting devices
    43.
    发明授权
    Semiconductor light emitting devices 有权
    半导体发光器件

    公开(公告)号：US06847057B1

    公开(公告)日：2005-01-25

    申请号：US10633058

    申请日：2003-08-01

    申请人： Nathan F. Gardner ,  Jonathan J. Wierer, Jr. ,  Gerd O. Mueller ,  Michael R. Krames

    发明人： Nathan F. Gardner ,  Jonathan J. Wierer, Jr. ,  Gerd O. Mueller ,  Michael R. Krames

    IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L33/22 ,  H01L33/40

    CPC分类号： H01L33/405 ,  H01L33/0004 ,  H01L33/22

    摘要： A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.

    摘要翻译： III族氮化物器件包括第一n型层，第一p型层和分离第一p型层和第一n型层的有源区。 该装置可以包括第二n型层和分隔第一和第二n型层的隧道结。 第一和第二触点电连接到第一和第二n型层。 第一和第二触点由相同的材料形成，对有源区域发射的光的反射率大于75％的材料形成。 该器件可以包括布置在第二n型层和第二接触之间的纹理化层，或者形成在与器件层相对的生长衬底的表面上。

    WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE
    44.
    发明申请
    WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    波长转换半导体发光器件

    公开(公告)号：US20110156056A1

    公开(公告)日：2011-06-30

    申请号：US13045824

    申请日：2011-03-11

    申请人： Michael R. Krames ,  Gerd O. Mueller

    发明人： Michael R. Krames ,  Gerd O. Mueller

    IPC分类号： H01L33/26 ,  H01L33/50 ,  H01L33/32

    CPC分类号： H04L45/7453 ,  H01L33/0079 ,  H01L33/505 ,  H01L2224/16225 ,  H04L47/2441

    摘要： A material such as a phosphor is optically coupled to a semiconductor structure including a light emitting region disposed between an n-type region and a p-type region, in order to efficiently extract light from the light emitting region into the phosphor. The phosphor may be phosphor grains in direct contact with a surface of the semiconductor structure, or a ceramic phosphor bonded to the semiconductor structure, or to a thin nucleation structure on which the semiconductor structure may be grown. The phosphor is preferably highly absorbent and highly efficient. When the semiconductor structure emits light into such a highly efficient, highly absorbent phosphor, the phosphor may efficiently extract light from the structure, reducing the optical losses present in prior art devices.

    摘要翻译： 诸如磷光体的材料光学耦合到包括设置在n型区域和p型区域之间的发光区域的半导体结构，以有效地将来自发光区域的光提取到荧光体中。 磷光体可以是与半导体结构的表面直接接触的荧光体颗粒，或者结合到半导体结构的陶瓷荧光体，或可以生长半导体结构的薄的成核结构。 磷光体优选是高吸收性和高效率的。 当半导体结构将光发射到这种高效，高吸收性的荧光体中时，磷光体可以有效地从结构中提取光，从而减少了现有技术装置中存在的光学损耗。

    Wavelength-converted semiconductor light emitting device
    48.
    发明授权
    Wavelength-converted semiconductor light emitting device 有权
    波长转换半导体发光器件

    公开(公告)号：US08748923B2

    公开(公告)日：2014-06-10

    申请号：US13045824

    申请日：2011-03-11

    申请人： Michael R. Krames ,  Gerd O. Mueller

    发明人： Michael R. Krames ,  Gerd O. Mueller

    IPC分类号： H01L33/00

    CPC分类号： H04L45/7453 ,  H01L33/0079 ,  H01L33/505 ,  H01L2224/16225 ,  H04L47/2441

    摘要： A material such as a phosphor is optically coupled to a semiconductor structure including a light emitting region disposed between an n-type region and a p-type region, in order to efficiently extract light from the light emitting region into the phosphor. The phosphor may be phosphor grains in direct contact with a surface of the semiconductor structure, or a ceramic phosphor bonded to the semiconductor structure, or to a thin nucleation structure on which the semiconductor structure may be grown. The phosphor is preferably highly absorbent and highly efficient. When the semiconductor structure emits light into such a highly efficient, highly absorbent phosphor, the phosphor may efficiently extract light from the structure, reducing the optical losses present in prior art devices.

    摘要翻译： 诸如磷光体的材料光学耦合到包括设置在n型区域和p型区域之间的发光区域的半导体结构，以有效地将来自发光区域的光提取到荧光体中。 磷光体可以是与半导体结构的表面直接接触的荧光体颗粒，或者结合到半导体结构的陶瓷荧光体，或可以生长半导体结构的薄的成核结构。 磷光体优选是高吸收性和高效率的。 当半导体结构将光发射到这种高效，高吸收性的荧光体中时，磷光体可以有效地从结构中提取光，从而减少了现有技术装置中存在的光学损耗。