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公开(公告)号：US09171613B2
公开(公告)日：2015-10-27
申请号：US13322291
申请日：2009-07-28
CPC分类号： H01L45/1273 , G11C13/0007 , G11C16/02 , G11C2213/19 , G11C2213/52 , H01L27/2463 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/147 , H01L45/148
摘要： Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device includes an active region, a first electrode disposed on a first surface of the active region, and a second electrode disposed on a second surface of the active region, the second surface opposite the first surface. The first electrode is configured with a smaller width than the active region in a first direction, and the second electrode is configured with a larger width than the active region in a second direction. Application of a voltage to at least one of the electrodes produces an electric field across a sub-region within the active region between the first electrode and the second electrode.
摘要翻译： 本发明的实施例涉及提供非易失性忆阻转换的纳米级忆阻器装置。 在一个实施例中，忆阻器件包括有源区域，设置在有源区域的第一表面上的第一电极和设置在有源区域的第二表面上的第二电极，第二表面与第一表面相对。 第一电极被配置为在第一方向上具有比有源区域更小的宽度，并且第二电极被配置为在第二方向上具有比有源区域更大的宽度。 向至少一个电极施加电压产生穿过第一电极和第二电极之间的有源区域内的子区域的电场。
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公开(公告)号：US08283649B2
公开(公告)日：2012-10-09
申请号：US12510753
申请日：2009-07-28
IPC分类号： H01L29/04
CPC分类号： G11C13/0009 , G11C17/16 , G11C17/165 , G11C2213/77 , G11C2213/81 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1273 , H01L45/146
摘要： A memristor includes a substrate having a plurality of protrusions, wherein each of the plurality of protrusions extends in a first direction, a first electrode provided over at least one of the plurality of protrusions, wherein the first electrode conforms to the shape of the at least one protrusion such that the first electrode has a crest, a switching material positioned upon the first electrode; and a second electrode positioned upon the switching material such that a portion of the second electrode is substantially in line with the crest of the first electrode along the first direction, wherein an active region in the switching material is operable to be formed between the crest of the first electrode and the portion of the second electrode that is substantially in line with the crest of the first electrode.
摘要翻译： 忆阻器包括具有多个突起的基板，其中多个突起中的每一个在第一方向上延伸，第一电极设置在多个突起中的至少一个上，其中第一电极符合至少的形状 一个突起，使得第一电极具有峰顶，开关材料定位在第一电极上; 以及位于所述开关材料上的第二电极，使得所述第二电极的一部分沿着所述第一方向与所述第一电极的峰基本上一致，其中所述开关材料中的有源区可操作地形成在所述第一电极的顶部之间， 所述第一电极和所述第二电极的与所述第一电极的峰基本上一致的部分。
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公开(公告)号：US20120228500A1
公开(公告)日：2012-09-13
申请号：US11831291
申请日：2007-07-31
CPC分类号： H01Q1/36 , G01J1/04 , G01J5/0837 , H01Q1/248 , H01Q1/38
摘要： An electromagnetic wave receiving antenna includes a spiral element configured to selectively attenuate electromagnetic waves having a predetermined wavelength, selected wavelengths, or range of wavelengths, and to concentrate electromagnetic waves having a predetermined wavelength, selected wavelengths, or range of wavelengths other than the attenuated wavelengths.
摘要翻译： 电磁波接收天线包括：螺旋元件，被配置为选择性地衰减具有预定波长，选定波长或波长范围的电磁波，并且将具有预定波长，选定波长或衰减波长以外的波长范围的电磁波集中 。
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公开(公告)号：US20120154880A1
公开(公告)日：2012-06-21
申请号：US13259418
申请日：2009-09-10
CPC分类号： G02F1/0102 , G02F1/0121 , G02F2202/06 , G02F2202/10 , G02F2202/16 , G02F2203/12 , G03H1/02 , G03H1/2294 , G03H2001/2271 , G03H2001/303 , G03H2225/22 , G03H2225/32 , G03H2225/33 , G03H2225/35 , G03H2225/60
摘要： Various embodiments of the present invention are directed to external, electronically controllable modulators. In one embodiment, a modulating device (100,400) includes a first electrode (104,404), a second electrode (106,406), and an active region (102,402). The active region is configured so that at least a portion of the active region is disposed between the first electrode and the second electrode. Applying a voltage of an appropriate magnitude and polarity to the electrodes changes the conductivity of the active region which in turn shifts the phase and/or amplitude of electromagnetic radiation transmitted through the active region.
摘要翻译： 本发明的各种实施方案涉及外部的电子可控制调节剂。 在一个实施例中，调制装置（100,400）包括第一电极（104,404），第二电极（106,406）和有源区域（102,402）。 有源区被配置为使得有源区的至少一部分设置在第一电极和第二电极之间。 向电极施加适当幅度和极性的电压改变了有源区的电导率，而有源区的电导又转移了透过有源区的电磁辐射的相位和/或振幅。
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45.发明授权公开(公告)号：US08107149B2
公开(公告)日：2012-01-31
申请号：US12387169
申请日：2009-04-29
申请人： Wei Wu , Alexandre M. Bratkovski , Shih-Yuan Wang , Jingjing Li , Qiangfei Xia
发明人： Wei Wu , Alexandre M. Bratkovski , Shih-Yuan Wang , Jingjing Li , Qiangfei Xia
CPC分类号： G02F1/01 , G02F3/02 , G02F2202/30 , Y10S977/762 , Y10S977/932 , Y10S977/949 , Y10S977/95
摘要： Various embodiments of the present invention are directed to external, electronically controllable, negative index material-based modulators. In one aspect, an external modulator comprises a negative index material in electronic communication with an electronic signal source. The negative index material receives an electronic signal encoding data from the electronic signal source and an unmodulated carrier wave from an electromagnetic radiation source. Magnitude variations in the electronic signal produce corresponding effective refractive index changes in the negative index material encoding the data in the amplitude and/or phase of the carrier wave to produce an electromagnetic signal.
摘要翻译： 本发明的各种实施方案涉及外部的，电子可控的，负指数材料的调节剂。 一方面，外部调制器包括与电子信号源电子通信的负索引材料。 负索引材料接收来自电子信号源的电子信号编码数据和来自电磁辐射源的未调制载波。 电子信号的幅度变化在编码载波的幅度和/或相位中的数据的负指数材料中产生对应的有效折射率变化，以产生电磁信号。
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公开(公告)号：US07989798B2
公开(公告)日：2011-08-02
申请号：US12509689
申请日：2009-07-27
IPC分类号： H01L29/06
CPC分类号： G02B6/107 , B82Y30/00 , Y10S977/712 , Y10S977/762 , Y10T29/41
摘要： A patterned array of metallic nanostructures and fabrication thereof is described. A device comprises a patterned array of metallic columns vertically extending from a substrate. Each metallic column is formed by metallically coating one of an array of non-metallic nanowires catalytically grown from the substrate upon a predetermined lateral pattern of seed points placed thereon according to a nanoimprinting process. An apparatus for fabricating a patterned array of metallic nanostructures is also described.
摘要翻译： 描述了金属纳米结构的图案阵列及其制造。 一种器件包括从衬底垂直延伸的金属柱的图案化阵列。 根据纳米压印方法，通过在其上放置的种子点的预定横向图案上，从衬底催化生长的非金属纳米线阵列之一金属地涂覆每个金属柱。 还描述了用于制造金属纳米结构的图案化阵列的装置。
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公开(公告)号：US20110024710A1
公开(公告)日：2011-02-03
申请号：US12510753
申请日：2009-07-28
CPC分类号： G11C13/0009 , G11C17/16 , G11C17/165 , G11C2213/77 , G11C2213/81 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1273 , H01L45/146
摘要： A memristor includes a substrate having a plurality of protrusions, wherein each of the plurality of protrusions extends in a first direction, a first electrode provided over at least one of the plurality of protrusions, wherein the first electrode conforms to the shape of the at least one protrusion such that the first electrode has a crest, a switching material positioned upon the first electrode; and a second electrode positioned upon the switching material such that a portion of the second electrode is substantially in line with the crest of the first electrode along the first direction, wherein an active region in the switching material is operable to be formed between the crest of the first electrode and the portion of the second electrode that is substantially in line with the crest of the first electrode.
摘要翻译： 忆阻器包括具有多个突起的基板，其中多个突起中的每一个在第一方向上延伸，第一电极设置在多个突起中的至少一个上，其中第一电极符合至少的形状 一个突起，使得第一电极具有峰顶，开关材料定位在第一电极上; 以及位于所述开关材料上的第二电极，使得所述第二电极的一部分沿着所述第一方向与所述第一电极的峰基本上一致，其中所述开关材料中的有源区可操作地形成在所述第一电极的顶部之间， 所述第一电极和所述第二电极的与所述第一电极的峰基本上一致的部分。
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公开(公告)号：US07880251B2
公开(公告)日：2011-02-01
申请号：US11789821
申请日：2007-04-26
CPC分类号： G01J1/02 , B82Y20/00 , G01J1/0209 , G01J1/04 , G01J1/0437 , G01J1/0451 , G01J1/4257 , H01L31/02162 , H01L31/0236 , Y02E10/50
摘要： A structure includes a film having a plurality of nanoapertures. The nanoapertures are configured to allow the transmission of a predetermined subwavelength of light through the film via the plurality of nanoapertures. The structure also includes a semiconductor layer in connection with the film to facilitate the detection of the predetermined subwavelength of light transmitted through the film.
摘要翻译： 一种结构包括具有多个纳米孔的膜。 纳米孔径被配置为允许经由多个纳米孔径传输预定亚波长的光穿过膜。 该结构还包括与薄膜相关的半导体层，以便于检测透过薄膜的光的预定亚波长。
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公开(公告)号：US07593170B2
公开(公告)日：2009-09-22
申请号：US11584320
申请日：2006-10-20
申请人： Wei Wu , Shih-Yuan Wang , Alexandre M. Bratkovski
发明人： Wei Wu , Shih-Yuan Wang , Alexandre M. Bratkovski
CPC分类号： G02B1/00 , B82Y20/00 , G02B1/007 , G02F2202/30 , H01Q15/0086
摘要： Materials and methods for fabricating and using negative index materials are disclosed. A negative index material comprises a three-dimensional volume including a bulk solution and a plurality of unit cells disposed in the bulk solution in a substantially random pattern. Each unit cell comprises a periodic hole array pattern on a substrate or a resonator formed on a first surface of a substrate, and a thin wire pattern formed on a second surface of the substrate. The combination of the unit cells in the bulk solution produces a negative effective permeability and a negative effective permittivity over a frequency band of interest for the three-dimensional volume. The negative index material may be used to focus radiation by directing an incident radiation at the negative index material and generating a focused radiation by a negative refraction of the incident radiation in the negative index material.
摘要翻译： 公开了制造和使用负指数材料的材料和方法。 负指数材料包括三维体积，其包括本体溶液和以大致随机图案设置在本体溶液中的多个单元电池。 每个单元电池包括在衬底上形成的周期性孔阵列图案或形成在衬底的第一表面上的谐振器，以及形成在衬底的第二表面上的细线图案。 本体溶液中的单元电池的组合在三维体积的感兴趣频带上产生负的有效磁导率和负的有效介电常数。 负折射率材料可以用于通过在负指数材料处引入入射辐射来聚焦辐射，并通过负指数材料中的入射辐射的负折射产生聚焦辐射。
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公开(公告)号：US07592255B2
公开(公告)日：2009-09-22
申请号：US11021615
申请日：2004-12-22
IPC分类号： H01L21/44
CPC分类号： G02B6/107 , B82Y30/00 , Y10S977/712 , Y10S977/762 , Y10T29/41
摘要： A patterned array of metallic nanostructures and fabrication thereof is described. A plurality of nanowires is grown on a substrate, the plurality of nanowires being laterally arranged on the substrate in a predetermined array pattern. The plurality of nanowires is coated with a metal to generate a plurality of metal-coated nanowires. Vacancies between the metal-coated nanowires are filled in with a sacrificial material for stabilization, and the metal-coated nanowires are planarized. The sacrificial material is removed, the patterned array of metallic nanostructures being formed by the plurality of planarized metal-coated nanowires.
摘要翻译： 描述了金属纳米结构的图案阵列及其制造。 多个纳米线在衬底上生长，多个纳米线以预定的阵列图案横向布置在衬底上。 多个纳米线被涂覆有金属以产生多个金属涂覆的纳米线。 金属涂覆的纳米线之间的空位填充有用于稳定化的牺牲材料，并且金属涂覆的纳米线被平坦化。 去除牺牲材料，金属纳米结构的图案化阵列由多个平坦化的金属涂覆的纳米线形成。
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