Semiconductor device and method for fabricating the same
    41.
    发明申请
    Semiconductor device and method for fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US20070131997A1

    公开(公告)日:2007-06-14

    申请号:US11522982

    申请日:2006-09-19

    IPC分类号: H01L29/94

    摘要: A semiconductor device includes a capacitor formed by successively stacking a lower electrode, a capacitor dielectric film and an upper electrode on a substrate. The lower electrode includes a first conducting layer and a second conducting layer formed on the first conducting layer and having higher resistivity than the first conducting layer, and the capacitor dielectric film is formed so as to be in contact with the second conducting layer of the lower electrode.

    摘要翻译: 半导体器件包括通过在衬底上连续堆叠下电极,电容器电介质膜和上电极而形成的电容器。 下电极包括形成在第一导电层上并具有比第一导电层更高的电阻率的第一导电层和第二导电层,并且电容器电介质膜形成为与下部电极的第二导电层接触 电极。

    Non-volatile flip flop
    42.
    发明授权
    Non-volatile flip flop 失效
    非易失性触发器

    公开(公告)号:US07206217B2

    公开(公告)日:2007-04-17

    申请号:US10754058

    申请日:2004-01-09

    IPC分类号: G11C11/40

    摘要: A non-volatile flip flop according to the invention comprising: a flip flop section (4) having a pair of memory nodes (5, 6) for storing a pair of inverse logic data elements; and a pair of non-volatile resistance change elements (11, 12) which are connected to the pair of memory nodes (5, 6) through switching elements (9, 10) respectively and the resistances of which vary so as to be retainable, wherein, in a store operation, the resistances of the pair of non-volatile resistance change elements (11, 12) can be varied according to the respective potentials of the pair of memory nodes (5, 6) and, in a recall operation, the pair of memory nodes (5, 6) can be placed at potentials respectively according to the difference in resistance between the pair of non-volatile resistance change elements (11, 12).

    摘要翻译: 根据本发明的非易失性触发器包括:触发器部分(4),具有用于存储一对反逻辑数据元素的一对存储器节点(5,6); 以及一对非易失性电阻变化元件(11,12),它们分别通过开关元件(9,10)连接到一对存储器节点(5,6),并且其电阻变化以便保持, 其特征在于,在存储操作中,所述一对非易失性电阻变化元件(11,12)的电阻可以根据所述一对存储器节点(5,6)的各自的电位而变化,并且在回调操作中, 可以根据所述一对非易失性电阻变化元件(11,12)之间的电阻差分别将所述一对存储器节点(5,6)置于电位上。

    Measuring apparatus and method for measuring characteristic of solar cell
    43.
    发明授权
    Measuring apparatus and method for measuring characteristic of solar cell 失效
    用于测量太阳能电池特性的测量装置和方法

    公开(公告)号:US06639421B1

    公开(公告)日:2003-10-28

    申请号:US09691130

    申请日:2000-10-19

    IPC分类号: G01R3126

    CPC分类号: H02S50/10

    摘要: A predetermined area of a photo-sensing surface of a solar cell is illuminated, and a voltage vs. current characteristic is measured. Note, the rest of the photo-sensing surface which is not illuminated is called a dark area. Next, in a dark state in which the photo-sensing surface is not illuminated, a dark characteristic of the solar cell is measured. The obtained dark characteristic is multiplied by a ratio of the area of the dark area to the area of the photo-sensing surface, thereby a dark characteristic of the dark area is calculated. Then, a difference characteristic between the measured voltage vs. current characteristic and the dark characteristic of the dark area is calculated. The difference characteristic is multiplied by a ratio of the area of the photo-sensing surface to the area of the illuminated portion, thereby a voltage vs. current characteristic of the solar cell in a state corresponding to that the entire area of the photo-sensing surface is illuminated at once is obtained.

    摘要翻译: 照射太阳能电池的感光面的规定面积,测定电压 - 电流特性。 注意,未被照亮的光感测表面的其余部分称为暗区。 接下来,在光敏表面不被照亮的暗状态下,测量太阳能电池的暗特性。 所获得的暗特性乘以暗区的面积与感光面的面积的比值,由此计算暗区的暗特性。 然后,计算测量的电压与电流特性之间的差异特性和黑暗区域的暗特性。 差分特性乘以感光表面的面积与照射部分的面积的比率,从而在与感光面的整个面积相对应的状态下的太阳能电池的电压对电流特性 立即照射表面。

    Photoelectric conversion/connection device
    46.
    发明授权
    Photoelectric conversion/connection device 失效
    光电转换/连接装置

    公开(公告)号:US08419295B2

    公开(公告)日:2013-04-16

    申请号:US12449174

    申请日:2008-01-21

    IPC分类号: G02B6/36

    CPC分类号: G02B6/4292 G02B6/4284

    摘要: In a photoelectric conversion/connection device (100) including an optical element (320), a mounting board (310) on which the optical element is mounted, and an optical connector (400) which is connected to the mounting board so as to be optically connected to the optical element, the optical connector (400) is arranged on a surface (310a) opposite to a mounting surface (310b) of the mounting board (310) and the optical element (320) is exposed. The photoelectric conversion/connection device (100) includes a motherboard (210) having a main surface (210a) and an electric connector (220) to be mounted on the main surface of the motherboard. The electric connector (220) is detachably connected to the mounting board (310).

    摘要翻译: 在包括光学元件(320)的光电转换/连接装置(100),安装有光学元件的安装板(310)和连接到安装板的光连接器(400) 光连接到光学元件,光连接器(400)布置在与安装板(310)的安装表面(310b)相对的表面(310a)上,并且光学元件(320)被暴露。 光电转换/连接装置(100)包括具有主表面(210a)的主板(210)和安装在母板主表面上的电连接器(220)。 电连接器(220)可拆卸地连接到安装板(310)。

    Optical connector
    48.
    发明授权
    Optical connector 失效
    光连接器

    公开(公告)号:US08297855B2

    公开(公告)日:2012-10-30

    申请号:US12449175

    申请日:2008-01-25

    IPC分类号: G02B6/36

    CPC分类号: G02B6/4292

    摘要: An optical connector 1 is for connecting a connection object 10 to an optical module 21. A slider 3 is slidably held by a housing 2 adapted for positioning the connection object and the optical module. The housing has a first positioning portion for receiving the connection object. The slider has a first pressing portion 3a for elastically pressing the connection object in a first direction toward the first positioning portion and a second pressing portion 3e that elastically acts in a second direction perpendicular to the first direction.

    摘要翻译: 光连接器1用于将连接对象10连接到光学模块21.滑块3由适于定位连接对象和光学模块的壳体2可滑动地保持。 壳体具有用于接收连接物体的第一定位部分。 滑块具有用于沿第一方向朝向第一定位部弹性地按压连接物体的第一按压部分3a和在垂直于第一方向的第二方向上弹性地作用的第二按压部分3e。

    Semiconductor memory and method for manufacturing the same
    49.
    发明申请
    Semiconductor memory and method for manufacturing the same 失效
    半导体存储器及其制造方法

    公开(公告)号:US20060086960A1

    公开(公告)日:2006-04-27

    申请号:US11152109

    申请日:2005-06-15

    IPC分类号: H01L27/108

    摘要: A capacitor of a semiconductor memory of the present invention includes: a lower electrode which covers the surface of a storage node hole from the bottom to at least one of the sidewalls up to a level lower than the top surface of a second interlayer insulating film; a capacitive insulating film which covers the lower electrode; and an upper electrode which covers the capacitive insulating film.

    摘要翻译: 本发明的半导体存储器的电容器包括:下电极,其从底部到至少一个侧壁覆盖存储节点孔的表面直到比第二层间绝缘膜的顶表面低的水平; 覆盖下电极的电容绝缘膜; 以及覆盖电容绝缘膜的上电极。

    Non-volatile memory and fabrication method thereof
    50.
    发明授权
    Non-volatile memory and fabrication method thereof 有权
    非易失性存储器及其制造方法

    公开(公告)号:US07023014B2

    公开(公告)日:2006-04-04

    申请号:US10716621

    申请日:2003-11-20

    IPC分类号: H01L29/18

    摘要: The present invention relates to a non-volatile memory comprising: a first electrode (11); a second electrode (12); and a phase-change recording medium (14) sandwiched between the first electrode (11) and the second electrode (12), in which resistance value is varied by applying an electrical pulse across the first electrode (11) and the second electrode (12), at least one of the first electrode (11) and the second electrode (12) contains as a main ingredient at least one member selected from the group consisting of ruthenium, rhodium and osmium, and the phase-change recording medium (14) is formed of a phase-change material that contains chalcogen(s). This non-volatile memory exhibits improved durability and reliability by preventing deterioration of property (i.e., mutual impurity diffusion between the electrode and the phase-change recording medium) caused by application of current.

    摘要翻译: 本发明涉及一种非易失性存储器,包括:第一电极(11); 第二电极(12); 以及夹在第一电极(11)和第二电极(12)之间的相变记录介质(14),其中通过在第一电极(11)和第二电极(12)上施加电脉冲来改变电阻值 ),第一电极(11)和第二电极(12)中的至少一个包含选自钌,铑和锇中的至少一种元素和相变记录介质(14)作为主要成分, 由含有硫族元素的相变材料形成。 这种非易失性存储器通过防止由施加电流引起的性能劣化(即,电极和相变记录介质之间的相互杂质扩散)而显示出改进的耐久性和可靠性。