摘要:
A semiconductor device includes a capacitor formed by successively stacking a lower electrode, a capacitor dielectric film and an upper electrode on a substrate. The lower electrode includes a first conducting layer and a second conducting layer formed on the first conducting layer and having higher resistivity than the first conducting layer, and the capacitor dielectric film is formed so as to be in contact with the second conducting layer of the lower electrode.
摘要:
A non-volatile flip flop according to the invention comprising: a flip flop section (4) having a pair of memory nodes (5, 6) for storing a pair of inverse logic data elements; and a pair of non-volatile resistance change elements (11, 12) which are connected to the pair of memory nodes (5, 6) through switching elements (9, 10) respectively and the resistances of which vary so as to be retainable, wherein, in a store operation, the resistances of the pair of non-volatile resistance change elements (11, 12) can be varied according to the respective potentials of the pair of memory nodes (5, 6) and, in a recall operation, the pair of memory nodes (5, 6) can be placed at potentials respectively according to the difference in resistance between the pair of non-volatile resistance change elements (11, 12).
摘要:
A predetermined area of a photo-sensing surface of a solar cell is illuminated, and a voltage vs. current characteristic is measured. Note, the rest of the photo-sensing surface which is not illuminated is called a dark area. Next, in a dark state in which the photo-sensing surface is not illuminated, a dark characteristic of the solar cell is measured. The obtained dark characteristic is multiplied by a ratio of the area of the dark area to the area of the photo-sensing surface, thereby a dark characteristic of the dark area is calculated. Then, a difference characteristic between the measured voltage vs. current characteristic and the dark characteristic of the dark area is calculated. The difference characteristic is multiplied by a ratio of the area of the photo-sensing surface to the area of the illuminated portion, thereby a voltage vs. current characteristic of the solar cell in a state corresponding to that the entire area of the photo-sensing surface is illuminated at once is obtained.
摘要:
A roof in which an upper-end engaging portion of a downstream roof panel is seam-jointed with a lower-end engaging portion of an upstream roof panel, wherein at least the lower-end engaging portion has flexural rigidity enough to disengage the seam joint.
摘要:
A solar cell module is provided which is excellent in foldability and durability. The filler thickness in the downwardly facing parts, engagement parts, and upwardly facing folded parts of the solar cell module are made thinner than the filler that is placed at the other non-folded parts.
摘要:
In a photoelectric conversion/connection device (100) including an optical element (320), a mounting board (310) on which the optical element is mounted, and an optical connector (400) which is connected to the mounting board so as to be optically connected to the optical element, the optical connector (400) is arranged on a surface (310a) opposite to a mounting surface (310b) of the mounting board (310) and the optical element (320) is exposed. The photoelectric conversion/connection device (100) includes a motherboard (210) having a main surface (210a) and an electric connector (220) to be mounted on the main surface of the motherboard. The electric connector (220) is detachably connected to the mounting board (310).
摘要:
The invention provides an electronic component and a manufacturing method thereof that can achieve an improved adhesion strength when the electronic component is solder-mounted onto an external substrate and can thereby obtain considerably improved electric properties and reliabilities, etc. An electronic component, which is a capacitor 1, has: a circuit element 5a formed on a substrate 2; an electrode layer 5b connected to the circuit element 5a; passivation layers 6 and 8 that cover the electrode layer 5b; and terminal electrodes 9a and 9b connected to the electrode layer 5b via via-conductors Va and Vb formed through the passivation layers 6 and 8, the terminal electrodes 9a and 9b being formed to cover the side wall of the passivation layers 6 and 8. Since the pad electrodes 9a and 9b are formed so as to cover the passivation layers 6 and 8 across their uppermost surfaces and side walls, the area of contact between the pad electrodes 9a and 9b and the solder for solder-mounting increases, and the capacitor 1 can consequently exhibit an improved adhesion strength.
摘要:
An optical connector 1 is for connecting a connection object 10 to an optical module 21. A slider 3 is slidably held by a housing 2 adapted for positioning the connection object and the optical module. The housing has a first positioning portion for receiving the connection object. The slider has a first pressing portion 3a for elastically pressing the connection object in a first direction toward the first positioning portion and a second pressing portion 3e that elastically acts in a second direction perpendicular to the first direction.
摘要:
A capacitor of a semiconductor memory of the present invention includes: a lower electrode which covers the surface of a storage node hole from the bottom to at least one of the sidewalls up to a level lower than the top surface of a second interlayer insulating film; a capacitive insulating film which covers the lower electrode; and an upper electrode which covers the capacitive insulating film.
摘要:
The present invention relates to a non-volatile memory comprising: a first electrode (11); a second electrode (12); and a phase-change recording medium (14) sandwiched between the first electrode (11) and the second electrode (12), in which resistance value is varied by applying an electrical pulse across the first electrode (11) and the second electrode (12), at least one of the first electrode (11) and the second electrode (12) contains as a main ingredient at least one member selected from the group consisting of ruthenium, rhodium and osmium, and the phase-change recording medium (14) is formed of a phase-change material that contains chalcogen(s). This non-volatile memory exhibits improved durability and reliability by preventing deterioration of property (i.e., mutual impurity diffusion between the electrode and the phase-change recording medium) caused by application of current.