公开(公告)号：US20070290208A1

公开(公告)日：2007-12-20

申请号：US11889451

申请日：2007-08-13

申请人： Kaoru Hiyama ,  Tomoya Sanuki ,  Osamu Fujii

发明人： Kaoru Hiyama ,  Tomoya Sanuki ,  Osamu Fujii

IPC分类号： H01L29/10

CPC分类号： H01L21/823807 ,  H01L27/0629 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/10829 ,  H01L27/10894 ,  H01L29/92

摘要： A semiconductor device includes a substrate having a first area and a second area adjacent to the first area, a first silicon layer provided on the substrate in the first area, a relaxed layer which is provided on the substrate in the second area and which has a lattice constant greater than a lattice constant of the first silicon layer, and a strained-Si layer which is provided on the relaxed layer and which has a lattice constant substantially equivalent to the lattice constant of the relaxed layer.

摘要翻译： 半导体器件包括具有与第一区域相邻的第一区域和第二区域的衬底，设置在第一区域中的衬底上的第一硅层，设置在第二区域中的衬底上的松弛层， 晶格常数大于第一硅层的晶格常数，以及设置在松弛层上并具有与弛豫层的晶格常数基本相等的晶格常数的应变Si层。

公开(公告)号：US06906384B2

公开(公告)日：2005-06-14

申请号：US10096655

申请日：2002-03-14

申请人： Takashi Yamada ,  Tsutomu Sato ,  Shinichi Nitta ,  Hajime Nagano ,  Ichiro Mizushima ,  Hisato Oyamatsu ,  Yoshihiro Minami ,  Shinji Miyano ,  Osamu Fujii

发明人： Takashi Yamada ,  Tsutomu Sato ,  Shinichi Nitta ,  Hajime Nagano ,  Ichiro Mizushima ,  Hisato Oyamatsu ,  Yoshihiro Minami ,  Shinji Miyano ,  Osamu Fujii

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/764 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/84 ,  H01L27/08 ,  H01L27/088 ,  H01L27/10 ,  H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L27/01

CPC分类号： H01L27/10861 ,  H01L21/76243 ,  H01L21/823481 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/10894 ,  H01L27/1203 ,  H01L29/78639

摘要： A semiconductor device includes first and second semiconductor layers and first and second MOS transistors. The first semiconductor layer is provided on and electrically connected to the semiconductor substrate. The second semiconductor layer is provided near the first semiconductor layer and formed above the semiconductor substrate via one of an insulating film and a cavity. The first and second MOS transistors are respectively provided on the first and second semiconductor layers, and each has a gate electrode arranged parallel to a boundary between the first and second semiconductor layers.

摘要翻译： 半导体器件包括第一和第二半导体层以及第一和第二MOS晶体管。 第一半导体层设置在半导体衬底上并与之电连接。 第二半导体层设置在第一半导体层附近，并且经由绝缘膜和空腔中的一个形成在半导体基板的上方。 第一和第二MOS晶体管分别设置在第一和第二半导体层上，并且各自具有平行于第一和第二半导体层之间的边界排列的栅电极。

公开(公告)号：US06712520B2

公开(公告)日：2004-03-30

申请号：US09890958

申请日：2001-08-08

申请人： Koji Ueda ,  Keijiro Yamaguchi ,  Shinichi Tsunashima ,  Takashi Murai ,  Osamu Fujii

发明人： Koji Ueda ,  Keijiro Yamaguchi ,  Shinichi Tsunashima ,  Takashi Murai ,  Osamu Fujii

IPC分类号： F16C3338

CPC分类号： F16C33/543 ,  F16C19/26 ,  F16C33/56

摘要： A cage is made of a low carbon steel and is for use in a rolling bearing which includes an outer ring, an inner ring and a plurality of rolling elements disposed rotationally between the outer ring and the inner ring. The cage includes a plurality of pockets for retaining the rolling elements in an equi-distribution in the rotating direction of the rolling elements. The low carbon steel is a steel containing from 0.02 to 0.10% by weight of C and from 0.10 to 0.45% by weight of Mn and is subjected to plastic working. The hardness for the pocket surface at least at a portion in contact with the rolling element is Hv 190 to 270, and the hardness for the core portion in the cage section is Hv 110 to 170.

摘要翻译： 保持架由低碳钢制成，用于滚动轴承，该滚动轴承包括外环，内圈和旋转地设置在外圈和内圈之间的多个滚动元件。 保持架包括多个用于沿滚动元件的旋转方向等分布地保持滚动元件的凹部。 低碳钢是含有0.02〜0.10重量％的C和0.10〜0.45重量％的Mn的钢，并进行塑性加工。 至少在与滚动元件接触的部分处的口袋表面的硬度为Hv 190〜270，保持架部的芯部的硬度为110v〜170v。

公开(公告)号：US4266043A

公开(公告)日：1981-05-05

申请号：US90892

申请日：1979-11-05

申请人： Osamu Fujii ,  Toshio Kishimoto ,  Akio Kobayashi

发明人： Osamu Fujii ,  Toshio Kishimoto ,  Akio Kobayashi

IPC分类号： C08G18/00 ,  C08G18/48 ,  C08J9/02 ,  C08G18/14 ,  C08G18/12

CPC分类号： C08J9/02 ,  C08G18/4837 ,  C08G2101/0008 ,  C08G2101/0083 ,  C08J2375/00 ,  Y10S521/905 ,  Y10S521/914

摘要： A resilient hydrophobic foamed polymer obtained by reacting a mixture of an isocyanate terminated urethane prepolymer and a polyisocyanate (A) with aqueous material, said prepolymer being relatively hydrophilic and the reaction product of a molar excess of a polyisocyanate (B) with a polyetherpolyol having from 15 to 50% by weight of oxethylene content, said aqueous material having a water content between about 15 to 150% by weight based on said prepolymer, the amount of said polyisocyanate (A) ranging between about 5 to 15% by weight based on said prepolymer, said polyetherpolyol being selected from the group consisting of (a) the addition polymerization product of a starting material, ethylene oxide and another epoxide and (b) a mixture of at least two of the following:(1) The addition polymerization product of a starting material and ethylene oxide;(2) the addition polymerization product of a starting material and an epoxide other than ethylene oxide;(3) the addition polymerization material, ethylene oxide and another epoxide,and said starting material being selected from the group consisting of ethylene glycol, diethylene glycol, propylene glycol; dipropylene glycol; butylene glycol; hexylene glycol; glycerol; trimethylolethane; trimethylol propane; 1,2,6-hexanetriol; pentaerythritol; .alpha.-methylglycoside; sorbitol and sucrose.

摘要翻译： 通过将异氰酸酯封端的氨基甲酸酯预聚物和多异氰酸酯（A）的混合物与水性材料反应而获得的弹性疏水性发泡聚合物，所述预聚物相对亲水，并且摩尔过量的多异氰酸酯（B）与聚醚多元醇的反应产物具有 15至50重量％的氧化乙烯含量，所述水性材料的水含量基于所述预聚物为约15至150重量％，所述多异氰酸酯（A）的量基于所述预聚物的约5至15重量％ 预聚物，所述聚醚多元醇选自（a）原料加成聚合产物，环氧乙烷和另一种环氧化物，和（b）至少两种以下的混合物：（1）加成聚合产物 原料和环氧乙烷; （2）原料和环氧乙烷以外的环氧化物的加聚反应产物; （3）加成聚合材料，环氧乙烷和另一种环氧化物，所述原料选自乙二醇，二甘醇，丙二醇; 二丙二醇 丁二醇; 己二醇 甘油 三羟甲基乙烷 三羟甲基丙烷 1,2,6-己三醇; 季戊四醇 α-甲基糖苷; 山梨糖醇和蔗糖。

公开(公告)号：US08735181B2

公开(公告)日：2014-05-27

申请号：US12251558

申请日：2008-10-15

申请人： Osamu Fujii ,  Yoshimasa Kawase ,  Hisato Oyamatsu ,  Takeshi Shibata

发明人： Osamu Fujii ,  Yoshimasa Kawase ,  Hisato Oyamatsu ,  Takeshi Shibata

IPC分类号： G01R31/26

CPC分类号： H01L22/12 ,  H01J2237/30461 ,  H01J2237/31703 ,  H01J2237/3171

摘要： A measuring device measures a gate length of a plurality of gate electrodes formed on a wafer. A calculation device calculates data of an ion implantation dosage for making uniform a threshold voltage in a wafer surface on the basis of distribution of the gate length in a wafer surface measured by the measuring device. The ion implantation device implants ions into the wafer on the basis of the data of the ion implantation dosage calculated by the calculation device.

摘要翻译： 测量装置测量形成在晶片上的多个栅电极的栅极长度。 计算装置基于由测量装置测量的晶片表面中的栅极长度的分布，计算用于使晶片表面中的阈值电压均匀的离子注入剂量的数据。 离子注入装置基于由计算装置计算的离子注入剂量的数据将离子注入晶片。

公开(公告)号：US08299160B2

公开(公告)日：2012-10-30

申请号：US12297476

申请日：2007-04-17

申请人： Kei Yamauchi ,  Osamu Fujii

发明人： Kei Yamauchi ,  Osamu Fujii

IPC分类号： C08K3/10

CPC分类号： C08J5/043 ,  C08J2377/00 ,  C08K3/16 ,  C08K7/14 ,  C08L77/00

摘要： A resin composition including 30 to 90% by mass of polyamide (A), 70 to 10% by mass of glass fibers (B), a copper compound (C) and a halogenated compound (D), wherein polyamide (A) has a sum of a terminal carboxyl group concentration and a terminal amino group concentration of 100 milliequivalents/kg or more and 200 milliequivalents/kg or less, the terminal carboxyl group concentration being higher than the terminal amino group concentration; glass fibers (B) have a fiber diameter of 10 to 20 μm and a weight average fiber length of 5 to 30 mm; the content of copper based on polyamide (A) is 30 ppm or more and 200 ppm or less; and the molar ratio of halogen to copper (halogen/copper) is more than 5 and not more than 25.

摘要翻译： 含有30〜90质量％的聚酰胺（A），70〜10质量％的玻璃纤维（B），铜化合物（C）和卤化物（D）的树脂组合物，其中，聚酰胺（A） 末端羧基浓度和末端氨基浓度为100毫当量/ kg以上至200毫当量/ kg以下，末端羧基浓度高于末端氨基浓度; 玻璃纤维（B）的纤维直径为10〜20μm，重均纤维长度为5〜30mm， 基于聚酰胺（A）的铜的含量为30ppm以上且200ppm以下; 卤素与铜（卤素/铜）的摩尔比大于5且不超过25。

公开(公告)号：US07930173B2

公开(公告)日：2011-04-19

申请号：US11812381

申请日：2007-06-18

申请人： Osamu Fujii

发明人： Osamu Fujii

IPC分类号： G10L19/00

CPC分类号： G10L19/0204 ,  G10L19/032 ,  G10L21/0364

摘要： Provided is a signal processing method which can enhance the resolution of a spectrum round off by quantization and compensate energy of a spectrum truncated to zero by quantization so as to achieve reproduction without dissatisfaction or uncomfortable feeling. The selecting circuit selects a plurality of coefficients from coefficients of a frequency band of a dequantized acoustic signal. The computing circuit then computes an interpolation coefficient of a coefficient, which is not selected by the selecting circuit, by an interpolation method such as a Lagrange's interpolation method or a spline interpolation method which uses the plurality of coefficients selected by the selecting circuit.

摘要翻译： 提供了一种信号处理方法，其可以通过量化来提高舍入的频谱的分辨率，并且通过量化来补偿被截断为零的频谱的能量，以便在不感到不舒服或不舒适的感觉的情况下实现再现。 选择电路从去量化声信号的频带的系数中选择多个系数。 然后，计算电路通过使用由选择电路选择的多个系数的拉格朗日内插法或者样条插补法等插值法来计算未被选择电路选择的系数的插值系数。

公开(公告)号：US07605442B2

公开(公告)日：2009-10-20

申请号：US12263830

申请日：2008-11-03

申请人： Osamu Fujii ,  Tomoya Sanuki

发明人： Osamu Fujii ,  Tomoya Sanuki

IPC分类号： H01L21/762

CPC分类号： H01L29/7846 ,  H01L21/823412 ,  H01L21/823481 ,  H01L29/7842

摘要： A semiconductor device comprises a semiconductor substrate, a plurality of transistors provided in the semiconductor substrate, and an isolation region for isolating the plurality of transistors to one another, the isolation region being comprised of an isolating insulation film, wherein a crystal structure of at least a part of the isolating insulation film is broken.

摘要翻译： 半导体器件包括半导体衬底，设置在半导体衬底中的多个晶体管和用于将多个晶体管彼此隔离的隔离区域，隔离区域由隔离绝缘膜组成，其中至少具有晶体结构 隔离绝缘膜的一部分被破坏。

公开(公告)号：US20090101987A1

公开(公告)日：2009-04-23

申请号：US12252140

申请日：2008-10-15

申请人： Kaoru HIYAMA ,  Tatsurou Sawada ,  Osamu Fujii

发明人： Kaoru HIYAMA ,  Tatsurou Sawada ,  Osamu Fujii

IPC分类号： H01L27/092 ,  H01L21/311

CPC分类号： H01L21/823412 ,  H01L21/823807 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor substrate; a p-channel field effect transistor formed in a first region of the semiconductor substrate; an n-channel field effect transistor formed in a second region of the semiconductor substrate; a compressive stress film with a compressive stress generated inside, the compressive stress film covering the first region; a tensile stress film with a tensile stress generated inside, the tensile stress film covering the second region; and a buffer film located between the p-channel field effect transistor and the n-channel field effect transistor on the semiconductor substrate, the magnitude of internal stress of the buffer film being smaller than the magnitude of the compressive stress of the compressive stress film and the magnitude of the tensile stress of the tensile stress film.

摘要翻译： 半导体器件包括：半导体衬底; 形成在所述半导体衬底的第一区域中的p沟道场效应晶体管; 形成在所述半导体衬底的第二区域中的n沟道场效应晶体管; 压缩应力薄膜，其内部产生压缩应力，压缩应力薄膜覆盖第一区域; 拉伸应力膜，其内部产生拉伸应力，拉伸应力膜覆盖第二区域; 以及位于半导体衬底上的p沟道场效应晶体管和n沟道场效应晶体管之间的缓冲膜，缓冲膜的内应力的大小小于压缩应力膜的压缩应力的大小， 拉伸应力膜的拉伸应力的大小。

公开(公告)号：US07150084B2

公开(公告)日：2006-12-19

申请号：US10884913

申请日：2004-07-06

申请人： Mitsugu Umino ,  Michio Ito ,  Osamu Fujii ,  Atsunori Sugimoto

发明人： Mitsugu Umino ,  Michio Ito ,  Osamu Fujii ,  Atsunori Sugimoto

IPC分类号： B23P15/00 ,  A44B19/42 ,  A44B19/60 ,  A44B19/62

CPC分类号： A44B19/62 ,  A44B19/42 ,  A44B19/60 ,  Y10T29/49782 ,  Y10T29/5101 ,  Y10T29/5124 ,  Y10T29/5128 ,  Y10T29/53291 ,  Y10T29/53296 ,  Y10T29/533

摘要： Machining portions such as a cutter portion, a slider inserting portion and an upper stopper attaching portion are provided around the vertical axis of a fixed table portion in order of machining. A fastener chain cut to have a predetermined length is held by the fixed table portion and a gripper of a rotator provided around the same vertical axis. The fastener chain is rotated and transferred to each of the machining portions based on the intermittent rotation and control of the rotator in the holding state in the gripper. Every time a predetermined machining is completed in each of the machining portions for the fastener chain rotated and transferred intermittently, it is possible to rotate and transfer the fastener chain simultaneously and intermittently to the next machining portion, thereby carrying out the necessary machining continuously.

摘要翻译： 按照机械加工的顺序，在固定台部的纵轴上设置加工部，例如切割部，滑块插入部和上止动件安装部。 切割成具有预定长度的紧固链被固定台部分和设置在相同垂直轴线周围的转子的夹持器保持。 基于夹持器中的保持状态下的旋转体的间歇旋转和控制，将链条旋转并转移到各加工部。 每当在用于紧固链条的每个加工部分中完成旋转和间歇转动的预定加工时，可以将拉链同时并间歇地转动并转移到下一个加工部分，从而连续进行必要的加工。