公开(公告)号：US20220164381A1

公开(公告)日：2022-05-26

申请号：US17439684

申请日：2020-03-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kengo AKIMOTO ,  Shigeru TAMAKI ,  Kunitaka YAMAMOTO ,  Isamu SHIGEMORI

IPC: G06F16/58 ,  G06F16/53 ,  G06N3/04 ,  G06F16/583 ,  G06F40/268

Abstract: An image retrieval system with high retrieval accuracy is provided. The image retrieval system includes a database and a processing portion. The database has a function of storing a plurality of pieces of database image data, and a database tag is linked to each of the plurality of pieces of database image data. The processing portion has a function of obtaining database image feature value data representing a feature value of the database image data for each piece of the database image data. The processing portion has a function of obtaining query image feature value data representing a feature value of the query image data. The processing portion has a function of calculating first similarity of the database image data to the query image data for each piece of the database image data. The processing portion has a function of obtaining a query tag linked to the query image data using some of the database tags.

公开(公告)号：US20200259019A1

公开(公告)日：2020-08-13

申请号：US16864364

申请日：2020-05-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Kengo AKIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L27/12 ,  H01L21/02 ,  G02F1/1368 ,  G02F1/1362 ,  G02F1/1343 ,  C01G15/00 ,  H01L29/04

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1-δO3(ZnO)m (0

公开(公告)号：US20190157461A1

公开(公告)日：2019-05-23

申请号：US16233358

申请日：2018-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Akiharu MIYANAGA ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/24 ,  H01L27/12

Abstract: An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

公开(公告)号：US20190027640A1

公开(公告)日：2019-01-24

申请号：US16141187

申请日：2018-09-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI

IPC: H01L33/00 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

Abstract: An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

公开(公告)号：US20180175207A1

公开(公告)日：2018-06-21

申请号：US15891677

申请日：2018-02-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Kengo AKIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  C01G15/00 ,  G02F1/1343 ,  G02F1/1362 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2006/40 ,  G02F1/134309 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/123 ,  H01L21/02565 ,  H01L21/02609 ,  H01L27/1225 ,  H01L27/1285 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0

公开(公告)号：US20180122958A1

公开(公告)日：2018-05-03

申请号：US15846518

申请日：2017-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masayuki SAKAKURA ,  Ryosuke WATANABE ,  Junichiro SAKATA ,  Kengo AKIMOTO ,  Akiharu MIYANAGA ,  Takuya HIROHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L29/66 ,  H01L27/12 ,  H01L29/12

CPC classification number: H01L29/7869 ,  H01L21/2636 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78696

Abstract: It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed.

公开(公告)号：US20170323957A1

公开(公告)日：2017-11-09

申请号：US15656173

申请日：2017-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC: H01L29/66 ,  H01L21/46 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/7869

Abstract: It is an object to provide a semiconductor device including a thin film transistor with favorable electric properties and high reliability, and a method for manufacturing the semiconductor device with high productivity. In an inverted staggered (bottom gate) thin film transistor, an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and a buffer layer formed using a metal oxide layer is provided between the semiconductor layer and a source and drain electrode layers. The metal oxide layer is intentionally provided as the buffer layer between the semiconductor layer and the source and drain electrode layers, whereby ohmic contact is obtained.

公开(公告)号：US20160268437A1

公开(公告)日：2016-09-15

申请号：US15159015

申请日：2016-05-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO

IPC: H01L29/786 ,  H01L27/12 ,  G09G3/36 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/133 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/13306 ,  G02F1/136286 ,  G02F1/1368 ,  G09G3/3648 ,  G09G2300/0426 ,  G09G2300/0857 ,  G09G2310/08 ,  H01L27/1225 ,  H01L27/1285 ,  H01L29/24 ,  H01L29/26 ,  H01L29/41775 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78636 ,  H01L29/78693 ,  H01L29/78696

Abstract: A thin film transistor structure in which a source electrode and a drain electrode formed from a metal material are in direct contact with an oxide semicoaductor film many lead to high contact resistance. One cause of high contact resistance is that a Schottky junction is formed at a contact plane between the source and drain electrodes and the oxide semiconductor film. An oxygen-deficient oxide semiconductor layer which includes crystal grains with a size of 1 nm to 10 nm and has a higher carrier concentration than the oxide semiconductor film serving as a channel formation region is provided between the oxide semiconductor film and the source and drain electrodes.

Abstract translation: 其中由金属材料形成的源电极和漏电极与氧化物半导体膜直接接触的许多导致高接触电阻的薄膜晶体管结构。 高接触电阻的一个原因是在源电极和漏电极和氧化物半导体膜之间的接触平面处形成肖特基结。 在氧化物半导体膜与源电极和漏电极之间，设置氧含量不足的氧化物半导体层，其含有尺寸为1nm〜10nm，比作为沟道形成区域的氧化物半导体膜高的载流子浓度的晶粒 。

公开(公告)号：US20160240694A1

公开(公告)日：2016-08-18

申请号：US15137613

申请日：2016-04-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.

公开(公告)号：US20160204271A1

公开(公告)日：2016-07-14

申请号：US15079156

申请日：2016-03-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Yusuke NONAKA ,  Hiroshi KANEMURA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04

CPC classification number: H01L29/247 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: To manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor. An oxide semiconductor film is deposited by a sputtering method with the use of a polycrystalline sputtering target. In that case, partial pressure of water in a deposition chamber before or in the deposition is set to be lower than or equal to 10−3 Pa, preferably lower than or equal to 10−4 Pa, more preferably lower than or equal to 10−5 Pa. Thus, a dense oxide semiconductor film is obtained. The density of the oxide semiconductor film is higher than 6.0 g/cm3 and lower than 6.375 g/cm3.

Abstract translation: 通过给晶体管提供稳定的电特性来制造高度可靠的半导体器件。 通过使用多晶溅射靶的溅射法沉积氧化物半导体膜。 在这种情况下，淀积室内或沉积中的水的分压设定为低于或等于10 -3 Pa，优选低于或等于10 -4 Pa，更优选低于或等于10 -5Pa。因此，获得了致密的氧化物半导体膜。 氧化物半导体膜的密度高于6.0g / cm 3，低于6.375g / cm 3。