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    Non-volatile memory with a variable polarity line decoder
    41.
    发明授权
    Non-volatile memory with a variable polarity line decoder 有权
    具有可变极性线解码器的非易失性存储器

    公开(公告)号：US09543018B2

    公开(公告)日：2017-01-10

    申请号：US14964196

    申请日：2015-12-09

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Francesco La Rosa

    IPC: G11C8/10 ,  G11C16/08 ,  G11C16/14 ,  G11C16/16 ,  G11C8/12 ,  G11C8/08

    CPC classification number: G11C16/08 ,  G11C8/08 ,  G11C8/10 ,  G11C8/12 ,  G11C16/14 ,  G11C16/16 ,  G11C16/26

    Abstract: The present disclosure relates to a memory including a memory array with at least two rows of memory cells, a first driver coupled to a control line of the first row of memory cells, and a second driver coupled to a control line of the second row of memory cells. The first driver is made in a first well, the second driver is made in a second well electrically insulated from the first well, and the two rows of memory cells are produced in a memory array well electrically insulated from the first and second wells.

    Abstract translation: 本公开涉及包括具有至少两行存储器单元的存储器阵列的存储器，耦合到第一行存储器单元的控制线的第一驱动器和耦合到第二行存储器单元的控制线的第二驱动器 记忆细胞 第一驱动器在第一阱中制造，第二驱动器在与第一阱电绝缘的第二阱中制造，并且两行存储器单元在与第一阱和第二阱良好地电绝缘的存储器阵列中产生。

    Method and device for characterizing or measuring a floating capacitance
    42.
    发明授权
    Method and device for characterizing or measuring a floating capacitance 有权
    用于表征或测量浮动电容的方法和装置

    公开(公告)号：US09506964B2

    公开(公告)日：2016-11-29

    申请号：US13669741

    申请日：2012-11-06

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Francesco La Rosa

    IPC: G01R27/26 ,  G06F3/041 ,  G06F3/044

    CPC classification number: G01R27/2605 ,  G06F3/0416 ,  G06F3/044

    Abstract: The disclosure comprises: linking a first terminal of the capacitance to the mid-point of a first voltage divider bridge, applying a first voltage to a second terminal of the capacitance, maintaining a voltage of a mid-point of the first divider bridge near a reference voltage, and discharging a mid-point of a second divider bridge with a constant current. When a voltage of the mid-point of the second bridge reaches a first voltage threshold, applying a second voltage to the second terminal of the capacitance, and measuring the time for the voltage to reach a second threshold.

    Abstract translation: 本公开包括：将电容的第一端子连接到第一分压器桥的中点，将第一电压施加到电容的第二端子，将第一分压器桥的中点的电压保持在 参考电压，并以恒定电流放电第二分频器桥的中点。 当第二桥的中点的电压达到第一电压阈值时，向电容的第二端施加第二电压，并测量电压达到第二阈值的时间。

    Lower power sense amplifier for reading non-volatile memory cells
    43.
    发明授权
    Lower power sense amplifier for reading non-volatile memory cells 有权
    用于读取非易失性存储单元的低功率读出放大器

    公开(公告)号：US09460761B2

    公开(公告)日：2016-10-04

    申请号：US14751701

    申请日：2015-06-26

    Applicant: STMICROELECTRONICS (ROUSSET) SAS

    Inventor： Francesco La Rosa

    IPC: G11C11/34 ,  G11C7/00 ,  G11C7/02 ,  G11C5/14 ,  G11C7/06 ,  G11C7/08

    CPC classification number: G11C7/065 ,  G11C7/08

    Abstract: A sense amplifier includes: two detection inputs, a latch circuit including two sections coupled to each other and each supplying a data signal. Each section is respectively powered by a P-channel control transistor, having a gate terminal receiving a control signal linked to a respective detection input of the two detection inputs. The sense amplifier includes a control circuit configured to reduce each of the control signals to a sufficiently low voltage to put the corresponding control transistor to the on state, when the control signal reaches a reference voltage. The latch circuit is activated to supply one of the data signals when a corresponding one of the control transistors is in the on state.

    Abstract translation: 读出放大器包括：两个检测输入端，一个锁存电路，包括彼此耦合的两个部分，并且各自提供一个数据信号。 每个部分分别由P沟道控制晶体管供电，其具有接收与两个检测输入的相应检测输入链接的控制信号的栅极端子。 读出放大器包括控制电路，其被配置为当控制信号达到参考电压时，将每个控制信号减小到足够低的电压以将相应的控制晶体管置于导通状态。 当对应的一个控制晶体管处于导通状态时，锁存电路被激活以提供数据信号之一。

    Nonvolatile memory cells with a vertical selection gate of variable depth
    44.
    发明授权
    Nonvolatile memory cells with a vertical selection gate of variable depth 有权
    具有可变深度的垂直选择栅极的非易失性存储单元

    公开(公告)号：US08901634B2

    公开(公告)日：2014-12-02

    申请号：US13786213

    申请日：2013-03-05

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Francesco La Rosa ,  Yoann Goasduff ,  Stephan Niel ,  Arnaud Regnier

    IPC: H01L29/788 ,  G11C16/04 ,  H01L29/66 ,  H01L27/115

    CPC classification number: H01L29/7889 ,  G11C16/0425 ,  G11C16/0483 ,  G11C16/14 ,  H01L27/11524 ,  H01L29/66825

    Abstract: The disclosure relates to an integrated circuit comprising at least two memory cells formed in a semiconductor substrate, and a buried gate common to the selection transistors of the memory cells. The buried gate has a first section of a first depth extending in front of vertical channel regions of the selection transistors, and at least a second section of a second depth greater than the first depth penetrating into a buried source line. The lower side of the buried gate is bordered by a doped region forming a source region of the selection transistors and reaching the buried source line at the level where the second section of the buried gate penetrates into the buried source line, whereby the source region is coupled to the buried source line.

    Abstract translation: 本公开涉及一种集成电路，其包括形成在半导体衬底中的至少两个存储单元和与存储单元的选择晶体管共同的掩埋栅极。 掩埋栅极具有在选择晶体管的垂直沟道区域的前面延伸的第一深度的第一部分，以及大于深入埋入源极线的第一深度的至少第二深度的第二部分。 掩埋栅极的下侧由形成选择晶体管的源极区域的掺杂区域界定，并且在埋入栅极的第二部分穿入埋入源极线的水平面到达掩埋源极线，由此源极区域 耦合到埋地源线。

    NONVOLATILE MEMORY COMPRISING MINI WELLS AT A FLOATING POTENTIAL
    45.
    发明申请
    NONVOLATILE MEMORY COMPRISING MINI WELLS AT A FLOATING POTENTIAL 有权
    在浮动潜能下包含微型井的非易失性存储器

    公开(公告)号：US20130250700A1

    公开(公告)日：2013-09-26

    申请号：US13786197

    申请日：2013-03-05

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Francesco La Rosa

    IPC: H01L29/788 ,  G11C16/04 ,  H01L29/66

    CPC classification number: H01L29/788 ,  G11C16/0425 ,  G11C16/0433 ,  G11C16/10 ,  G11C16/16 ,  H01L27/11524 ,  H01L29/66825

    Abstract: The disclosure relates to an integrated circuit comprising a nonvolatile memory on a semiconductor substrate. The integrated circuit comprises a doped isolation layer implanted in the depth of the substrate, isolated conductive trenches reaching the isolation layer and forming gates of selection transistors of memory cells, isolation trenches perpendicular to the conductive trenches and reaching the isolation layer, and conductive lines parallel to the conductive trenches, extending on the substrate and forming control gates of charge accumulation transistors of memory cells. The isolation trenches and the isolated conductive trenches delimit a plurality of mini wells in the substrate, the mini wells electrically isolated from each other, each having a floating electrical potential and comprising two memory cells.

    Abstract translation: 本公开涉及一种在半导体衬底上包括非易失性存储器的集成电路。 集成电路包括注入衬底深度的掺杂隔离层，隔离的导电沟槽到达隔离层并形成存储单元的选择晶体管的栅极，垂直于导电沟槽并到达隔离层的隔离沟槽，并且导线平行 到导电沟槽，在衬底上延伸并形成存储器单元的电荷累积晶体管的控制栅极。 隔离沟槽和隔离的导电沟槽限定了衬底中的多个微型阱，所述微型阱彼此电隔离，每个具有浮置电势并且包括两个存储单元。

    METHOD AND DEVICE FOR CHARACTERIZING OR MEASURING A CAPACITANCE
    47.
    发明申请
    METHOD AND DEVICE FOR CHARACTERIZING OR MEASURING A CAPACITANCE 有权
    用于表征或测量电容的方法和装置

    公开(公告)号：US20130057298A1

    公开(公告)日：2013-03-07

    申请号：US13669732

    申请日：2012-11-06

    Applicant: STMicroelectronics (Rousset) SAS

    Inventor： Francesco La Rosa

    IPC: G01R27/26

    CPC classification number: G01R27/2605 ,  G06F3/0416 ,  G06F3/044

    Abstract: The disclosure relates to a method for characterizing or measuring a capacitance, comprising: linking the capacitance to a first mid-point of a first capacitive divider bridge, applying to the divider bridge a bias voltage, maintaining the voltage of the first mid-point near a reference voltage, discharging a second mid-point of a second divider bridge in parallel with the first by means of a constant current, and measuring the time for a voltage of the second mid-point to become equal to the voltage of the first mid-point. The disclosure may be applied in particular to the control of a touch screen display.

    Abstract translation: 本发明涉及一种用于表征或测量电容的方法，包括：将电容连接到第一电容分压器桥的第一中点，将分压电桥施加偏置电压，将第一中点的电压保持在接近 参考电压，通过恒定电流将与第一分压器并联的第二分压电桥的第二中点放电，并且测量第二中点的电压的时间变得等于第一中间电压的电压 -点。 本公开可以特别地应用于触摸屏显示器的控制。

    NON-VOLATILE MEMORY DEVICE READABLE ONLY A PREDETERMINED NUMBER OF TIMES
    50.
    发明申请
    NON-VOLATILE MEMORY DEVICE READABLE ONLY A PREDETERMINED NUMBER OF TIMES 有权

    公开(公告)号：US20230018738A1

    公开(公告)日：2023-01-19

    申请号：US17812122

    申请日：2022-07-12

    Applicant: STMicroelectronics (Rousset) SAS ,  STMicroelectronics International N.V.

    Inventor： Francesco La Rosa ,  Marco Bildgen

    IPC: G11C16/04 ,  H01L27/11524 ,  G11C16/08 ,  G11C16/10 ,  G11C16/26

    Abstract: In an embodiment a noon-volatile memory device includes a memory plane including at least one memory area including an array of memory cells having two rows and N columns, wherein each memory cell comprises a state transistor having a control gate and a floating gate selectable by a vertical selection transistor buried in a substrate and including a buried selection gate, and wherein each column of memory cells includes a pair of twin memory cells, two selection transistors of the pair of twin memory cells having a common selection gate and a processor configured to store in the memory area information including a succession of N bits so that, with exception of the last bit of the succession, a current bit of the succession is stored in two memory cells located on the same row and on two adjacent columns and a current bit and the following bit are respectively stored in two twin cells.

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