公开(公告)号：US20250015026A1

公开(公告)日：2025-01-09

申请号：US18897635

申请日：2024-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuekjae Lee ,  Jongho Lee ,  Jihoon Kim ,  Taehun Kim ,  Sangcheon Park ,  Jinkyeong Seol ,  Sanghoon Lee

IPC: H01L23/00 ,  H01L21/56 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

Abstract: A semiconductor package includes a first connection structure, a first semiconductor chip on an upper surface of the first connection structure, a first molding layer on the upper surface of the first connection structure and surrounding the first semiconductor chip, a first bond pad on the first semiconductor chip, a first bond insulation layer on the first semiconductor chip and the first molding layer and surrounding the first bond pad, a second bond pad directly contacting the first bond pad, a second bond insulation layer surrounding the second bond pad; and a second semiconductor chip on the second bond pad and the second bond insulation layer.

公开(公告)号：US12040313B2

公开(公告)日：2024-07-16

申请号：US18133959

申请日：2023-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyuekjae Lee ,  Jihoon Kim ,  JiHwan Suh ,  So Youn Lee ,  Jihwan Hwang ,  Taehun Kim ,  Ji-Seok Hong

IPC: H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L25/18

CPC classification number: H01L25/0652 ,  H01L21/565 ,  H01L24/08 ,  H01L24/80 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/08146 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2225/06524 ,  H01L2225/06555 ,  H01L2225/06586 ,  H01L2225/06589

Abstract: A semiconductor package includes a substrate, a first semiconductor chip on the substrate, a second semiconductor chip on the first semiconductor chip so that the first semiconductor chip is vertically between the second semiconductor chip and the substrate, a first molding layer adjacent to a sidewall of the first semiconductor chip on the substrate, the first molding layer formed of a first molding material, and a second molding layer adjacent to a sidewall of the second semiconductor chip on the substrate so that the first molding layer is vertically between the second molding layer and the substrate. The second molding layer is formed of a second molding material different from the first molding material. A top surface of the first semiconductor chip and a top surface of the first molding layer are flat and are coplanar with each other, and a ratio of the difference between the coefficient of thermal expansion between the second molding layer and the first molding layer to the difference between the coefficient of thermal expansion between the second molding layer and the substrate is between 5:1 and 20:1.

公开(公告)号：US11855044B2

公开(公告)日：2023-12-26

申请号：US17367005

申请日：2021-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon Kim

IPC: H01L25/065 ,  H01L23/48 ,  H01L23/31

CPC classification number: H01L25/0657 ,  H01L23/3107 ,  H01L23/481 ,  H01L2225/06517

Abstract: A semiconductor package includes a first semiconductor chip and a second semiconductor chip. The first semiconductor chip includes a peripheral region having a groove and a bonding region that is disposed higher than the groove. The second semiconductor chip is disposed in the bonding region of the first semiconductor chip. The second semiconductor chip is directly electrically connected to the first semiconductor chip. The second semiconductor chip includes an overhang protruded from the bonding region. The overhang is spaced apart from a bottom surface of the groove. Thus, a bonding failure, which may be caused by particles generated during a cutting the wafer and adhered to the edge portion of the second semiconductor chip, between the first semiconductor chip and the second semiconductor chip might be avoided.

公开(公告)号：US11835566B2

公开(公告)日：2023-12-05

申请号：US17294756

申请日：2019-11-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ilpyo Hong ,  Jihee Kang ,  Jiyong Kim ,  Jihoon Kim ,  Jongin Lee

IPC: G01R31/26 ,  G01R29/10 ,  H04B17/10 ,  H04B17/15 ,  H04B17/29 ,  G01R31/28 ,  H04B7/06

CPC classification number: G01R29/105 ,  G01R31/2822 ,  H04B7/0617 ,  H04B17/102 ,  H04B17/15 ,  H04B17/29

Abstract: An electronic device, according to one embodiment disclosed in the present disclosure, may be configured to: form a beam in any one direction of a first direction and directions rotated by a first angle on the basis of the first direction; control a device under test (DUT) so as to emit a designated signal by using the formed beam; and check antenna performance of the DUT at least on the basis of intensity measured from a signal measuring device. In addition, various embodiments inferred from the specification are also possible.

公开(公告)号：US11709196B2

公开(公告)日：2023-07-25

申请号：US17378592

申请日：2021-07-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donggyu Minn ,  Daehyun Kang ,  Yonghoon Kim ,  Jihoon Kim ,  Hyundo Ryu ,  Jeeho Park ,  Sunggi Yang ,  Youngchang Yoon ,  Sehyug Jeon

IPC: G01R31/28 ,  G01R31/3167 ,  G01R27/32

CPC classification number: G01R31/2822 ,  G01R27/32 ,  G01R31/3167

Abstract: The disclosure relates to an RFIC apparatus, and more particularly, to an RFIC circuit having a test circuit, a test apparatus, and a test method thereof. Further, the disclosure relates to a method for estimating or determining a DC gain using a test apparatus and an RF circuit in a DC/AC test stage, and detecting defects of the RF circuit based on the estimated or determined DC gain.

公开(公告)号：US20230085456A1

公开(公告)日：2023-03-16

申请号：US17859472

申请日：2022-07-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyo-Suk Chae ,  Dongsik Kong ,  Youngwook Park ,  Jihoon Kim ,  Myung-Hyun Baek ,  Ju Hyung We ,  Jun-Bum Lee

IPC: H01L29/423 ,  H01L21/306 ,  H01L21/02 ,  H01L21/762 ,  H01L21/768

Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate having a groove therein extending in a first direction, a gate insulating layer in the groove, a first conductive pattern in the groove and on the gate insulating layer, and a word line capping pattern in the groove and on the first conductive pattern. The first conductive pattern may include a first material and may include a first conductive portion adjacent to the word line capping pattern and a second conductive portion adjacent to a bottom end of the groove. A largest dimension of a grain of the first material of the first conductive portion may be equal to or larger than that of the first material of the second conductive portion.

公开(公告)号：US11463115B2

公开(公告)日：2022-10-04

申请号：US16766105

申请日：2018-11-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiyong Kim ,  Hyoseok Na ,  Yeonjeong Kim ,  Youngju Kim ,  Jungjoon Kim ,  Jihoon Kim ,  Jongin Lee

IPC: H04B1/04 ,  H03F3/24 ,  H01Q3/26 ,  G01S7/40 ,  G01S7/28 ,  H03G3/30

Abstract: An electronic device according to various embodiments of the present invention comprises: a housing; a plurality of antennas arranged on or inside the housing; a second communication circuit located inside the housing and electrically connected to the plurality of antennas; a first communication circuit, which is electrically connected to the second communication circuit, and generates a radio frequency (RF) signal or an intermediate frequency (IF) signal so as to transmit the RF or IF signal to the second communication circuit; a memory for storing at least one parameter set to correspond to the characteristic of the second communication circuit; and a control circuit electrically connected to the first communication circuit, wherein the control circuit can be set to transmit a control signal for controlling at least one amplifier included in the second communication circuit to the second communication circuit on the basis of the at least one parameter stored in the memory. Various embodiments of the present invention can be other embodiments.

公开(公告)号：US11128265B2

公开(公告)日：2021-09-21

申请号：US16734484

申请日：2020-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngchang Yoon ,  Kyuhwan An ,  Jihoon Kim ,  Sangho Lee

IPC: H03F1/22 ,  H03F1/32 ,  H03F3/16

Abstract: A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. An amplifier includes a first transistor for amplifying the fundamental signal applied to a gate terminal, and a second transistor having a source terminal electrically connected to the drain terminal of the first transistor and a drain terminal electrically connected to a bias voltage. The current flowing through the second transistor may be determined based on the current flowing in the drain terminal of the first transistor.

公开(公告)号：US10511271B2

公开(公告)日：2019-12-17

申请号：US15862213

申请日：2018-01-04

Applicant: Samsung Electronics Co., Ltd. ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

Inventor： Jihoon Kim ,  Bumman Kim ,  Kyunghoon Moon ,  Seokwon Lee ,  Daechul Jeong ,  Byungjoon Park ,  Juho Son

IPC: H03G3/20 ,  H03F1/56 ,  H03F1/02 ,  H03F1/32 ,  H03F3/45 ,  H03F3/193 ,  H03F3/21 ,  H04W88/08

Abstract: The method and system for converging a 5th-generation (5G) communication system for supporting higher data rates beyond a 4th-generation (4G) system with a technology for internet of things (IoT) are provided. The method includes intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. The system includes a power amplification device capable of minimizing the effect of envelope impedance. The power amplification device may be incorporated in a terminal and a base station.

公开(公告)号：US09754549B2

公开(公告)日：2017-09-05

申请号：US14803281

申请日：2015-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewook Kwon ,  Jihoon Kim ,  Jun-Jae Lee

IPC: G09G3/36

CPC classification number: G09G3/3688 ,  G09G3/3614 ,  G09G2310/0291 ,  G09G2310/0294

Abstract: Provided are a source driver configured to drive a data line of a display panel and a liquid crystal display (LCD) device including the same. The source drive configured to compare whether data of consecutive gate lines in the display panel and data of adjacent data lines in the display panel are identical or not, and selectively disable output amplifiers connected to the data line having identical data.