公开(公告)号：US20190393354A1

公开(公告)日：2019-12-26

申请号：US16481512

申请日：2018-01-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasutaka NAKAZAWA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  G09F9/30 ,  H05B33/10 ,  H05B33/14 ,  H01L29/66 ,  H01L29/51 ,  H01L21/02

Abstract: A semiconductor device which has favorable electrical characteristics is provided. A method for manufacturing a semiconductor device with high productivity is provided. A method for manufacturing a semiconductor device with a high yield is provided.A method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.

公开(公告)号：US20190074382A1

公开(公告)日：2019-03-07

申请号：US16182075

申请日：2018-11-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  H01L29/10 ,  G02F1/1368 ,  H01L27/12

Abstract: A semiconductor device comprising a first transistor, a second insulating film, a conductive film, and a capacitor is provided. The first transistor comprises a first oxide semiconductor film, a gate insulating film over the first oxide semiconductor film, and a gate electrode over the gate insulating film. The second insulating film is provided over the gate electrode. The conductive film is electrically connected to the first oxide semiconductor film. The capacitor comprises a second oxide semiconductor film, the second insulating film over the second oxide semiconductor film, and the conductive film over the second insulating film. The first oxide semiconductor film comprises a first region and a second region. Each of a carrier density of the second region and a carrier density of the second oxide semiconductor film is higher than a carrier density of the first region.

公开(公告)号：US20180090621A1

公开(公告)日：2018-03-29

申请号：US15822648

申请日：2017-11-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  H01L29/10 ,  G02F1/1368 ,  H01L27/12

CPC classification number: H01L29/78606 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/13394 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device comprising a first transistor, a second insulating film, a conductive film, and a capacitor is provided. The first transistor comprises a first oxide semiconductor film, a gate insulating film over the first oxide semiconductor film, and a gate electrode over the gate insulating film. The second insulating film is provided over the gate electrode. The conductive film is electrically connected to the first oxide semiconductor film. The capacitor comprises a second oxide semiconductor film, the second insulating film over the second oxide semiconductor film, and the conductive film over the second insulating film. The first oxide semiconductor film comprises a first region and a second region. Each of a carrier density of the second region and a carrier density of the second oxide semiconductor film is higher than a carrier density of the first region.

公开(公告)号：US20180053856A1

公开(公告)日：2018-02-22

申请号：US15785562

申请日：2017-10-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/32 ,  H01L29/10 ,  H01L21/465 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66 ,  H01L29/06 ,  H01L29/24 ,  G02F1/1362 ,  H01L29/423 ,  H01L29/04 ,  H01L21/306

CPC classification number: H01L29/78696 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/7869 ,  H01L29/78693

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

公开(公告)号：US20170162718A1

公开(公告)日：2017-06-08

申请号：US15439997

申请日：2017-02-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasutaka NAKAZAWA ,  Masami JINTYOU ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Takuya HIROHASHI ,  Shunsuke ADACHI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/32051 ,  H01L21/3213 ,  H01L21/473 ,  H01L21/4757 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A semiconductor device including a transistor having a reduced number of oxygen vacancies in a channel formation region of an oxide semiconductor with stable electrical characteristics or high reliability is provided. A gate insulating film is formed over a gate electrode; an oxide semiconductor layer is formed over the gate insulating film; an oxide layer is formed over the oxide semiconductor layer by a sputtering method to form an stacked-layer oxide film including the oxide semiconductor layer and the oxide layer; the stacked-layer oxide film is processed into a predetermined shape; a conductive film containing Ti as a main component is formed over the stacked-layer oxide film; the conductive film is etched to form source and drain electrodes and a depression portion on a back channel side; and portions of the stacked-layer oxide film in contact with the source and drain electrodes are changed to an n-type by heat treatment.

公开(公告)号：US20170162716A1

公开(公告)日：2017-06-08

申请号：US15434153

申请日：2017-02-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/7869 ,  H01L2029/7863

Abstract: A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is provided. A semiconductor device including an oxide semiconductor and having large on-state current is provided. The semiconductor device includes an oxide insulating film, an oxide semiconductor film over the oxide insulating film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a gate insulating film between the source electrode and the drain electrode, and a gate electrode overlapping the oxide semiconductor film with the gate insulating film. The oxide semiconductor film includes a first region overlapped with the gate electrode and a second region not overlapped with the gate electrode, the source electrode, and the drain electrode. The first region and the second region have different impurity element concentrations. The gate electrode, the source electrode, and the drain electrode contain the same metal element.

公开(公告)号：US20170104090A1

公开(公告)日：2017-04-13

申请号：US15287085

申请日：2016-10-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Yasuharu HOSAKA ,  Yasutaka NAKAZAWA ,  Takashi HAMOCHI ,  Takahiro SATO ,  Shunpei YAMAZAKI

IPC: H01L29/66 ,  H01L27/146 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L29/66969 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133528 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/13394 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133541 ,  G02F2201/121 ,  G06F3/0412 ,  G06F3/044 ,  G06F2203/04103 ,  G06F2203/04108 ,  G09G3/20 ,  G09G3/2003 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2300/0452 ,  G09G2330/021 ,  G09G2330/028 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14616 ,  H01L29/4908 ,  H01L29/78633 ,  H01L29/78648 ,  H01L29/7869

Abstract: Variation in electrical characteristics of a semiconductor device including an oxide semiconductor is inhibited and the reliability thereof is improved. The oxide semiconductor is formed over a substrate. An insulator is formed over the oxide semiconductor. A metal oxide is formed over the insulator. A conductor is formed over the metal oxide. The conductor, the metal oxide, and the insulator over the oxide semiconductor are removed to expose a portion of the oxide semiconductor. Plasma treatment is performed on a surface of the exposed portion of the oxide semiconductor. A nitride insulator is formed over the exposed portion of the oxide semiconductor and the conductor.

公开(公告)号：US20150311346A1

公开(公告)日：2015-10-29

申请号：US14685737

申请日：2015-04-14

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Junichi KOEZUKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Yasutaka NAKAZAWA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2029/42388

Abstract: Provided is a transistor with small parasitic capacitance or high frequency characteristics or a semiconductor device including the transistor. An oxide semiconductor film includes a first region in contact with a first conductive film, a second region in contact with a first insulating film, a third region in contact with a third insulating film, a fourth region in contact with a second insulating film, and a fifth region in contact with a second conductive film. The first insulating film is positioned over the first conductive film and the oxide semiconductor film. The second insulating film is positioned over the second conductive film and the oxide semiconductor film. The third insulating film is positioned over the first insulating film, the second insulating film, and the oxide semiconductor film. The third conductive film and the oxide semiconductor film partly overlap with each other with the third insulating film provided therebetween.

Abstract translation: 提供具有小寄生电容或高频特性的晶体管或包括晶体管的半导体器件。 氧化物半导体膜包括与第一导电膜接触的第一区域，与第一绝缘膜接触的第二区域，与第三绝缘膜接触的第三区域，与第二绝缘膜接触的第四区域，以及 与第二导电膜接触的第五区域。 第一绝缘膜位于第一导电膜和氧化物半导体膜之上。 第二绝缘膜位于第二导电膜和氧化物半导体膜之上。 第三绝缘膜位于第一绝缘膜，第二绝缘膜和氧化物半导体膜上。 第三导电膜和氧化物半导体膜在其间设置有第三绝缘膜，彼此部分重叠。

公开(公告)号：US20140138674A1

公开(公告)日：2014-05-22

申请号：US14073993

申请日：2013-11-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takahiro SATO ,  Yasutaka NAKAZAWA ,  Takayuki CHO ,  Shunsuke KOSHIOKA ,  Hajime TOKUNAGA ,  Masami JINTYOU

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  G02F1/136277 ,  G02F1/1368 ,  H01L21/02365 ,  H01L21/02403 ,  H01L21/02422 ,  H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/30604 ,  H01L21/465 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/3248 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a multilayer film in which an oxide semiconductor film and an oxide film are stacked, a gate electrode, and a gate insulating film. The multilayer film overlaps with the gate electrode with the gate insulating film interposed therebetween. The multilayer film has a shape having a first angle between a bottom surface of the oxide semiconductor film and a side surface of the oxide semiconductor film and a second angle between a bottom surface of the oxide film and a side surface of the oxide film. The first angle is acute and smaller than the second angle. Further, a semiconductor device including such a transistor is manufactured.

Abstract translation: 晶体管包括层叠有氧化物半导体膜和氧化膜的多层膜，栅极电极和栅极绝缘膜。 多层膜与栅电极重叠，栅极绝缘膜插入其间。 多层膜具有在氧化物半导体膜的底面和氧化物半导体膜的侧面之间具有第一角度的形状，以及氧化物膜的底面与氧化膜的侧面之间的第二角度。 第一个角度是锐角并小于第二个角度。 此外，制造包括这种晶体管的半导体器件。

公开(公告)号：US20250113706A1

公开(公告)日：2025-04-03

申请号：US18728171

申请日：2023-01-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi OKAZAKI ,  Rai SATO ,  Yasutaka NAKAZAWA

IPC: H10K59/122 ,  H10K59/12

Abstract: A display device capable of performing display at high luminance is provided. After a first layer including a first light-emitting material emitting blue light is formed into an island shape over a first pixel electrode, a second layer including a second light-emitting material emitting light with a longer wavelength than blue light is formed into an island shape over a second pixel electrode. Then, an insulating layer overlapping with a region interposed between the first pixel electrode and the second pixel electrode is formed, and a common electrode is formed to cover the first layer, the second layer, and the insulating layer. The insulating layer is formed by performing patterning treatment and etching treatment at least twice.