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公开(公告)号：US20170040403A1
公开(公告)日：2017-02-09
申请号：US15225166
申请日：2016-08-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hideaki KUWABARA
IPC: H01L27/32 , H01L29/786 , G02F1/133 , H01L29/423 , G02F1/1335 , G02F1/1343 , G02F1/1368 , H01L27/12
CPC classification number: H01L27/3267 , G02F1/13306 , G02F1/133345 , G02F1/133512 , G02F1/133514 , G02F1/133553 , G02F1/1337 , G02F1/134309 , G02F1/1368 , G02F2001/133342 , G02F2201/123 , G02F2201/44 , G02F2202/104 , G02F2203/02 , H01L27/1274 , H01L29/42392 , H01L29/78621 , H01L29/78633 , H01L29/78648 , H01L29/78672 , H01L29/78696 , H01L2251/533
Abstract: Provided is a novel display panel that is highly convenient or reliable. The display device has two display modes: a reflective display mode and a light-emitting display mode. In the light-emitting display mode, light display is performed by transmitting light from a light-emitting element overlapping with an opening in a pixel electrode of a reflective display element. A switching element of the reflective display element and a switching element electrically connected to the light-emitting element are formed over one substrate. They are each a transistor whose channel formation region is formed in a silicon-containing film, specifically a polysilicon film.
Abstract translation: 提供了一种非常方便或可靠的新型显示面板。 显示装置具有两种显示模式：反射显示模式和发光显示模式。 在发光显示模式中，通过透射来自与反射显示元件的像素电极中的开口重叠的发光元件的光来进行光显示。 反射显示元件的开关元件和电连接到发光元件的开关元件形成在一个基板上。 它们各自是其沟道形成区形成在含硅膜中，特别是多晶硅膜的晶体管。
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公开(公告)号：US20160343793A1
公开(公告)日：2016-11-24
申请号：US15226251
申请日：2016-08-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Satoshi SEO , Hideaki KUWABARA
CPC classification number: H01L27/3279 , H01L27/322 , H01L27/3246 , H01L27/3248 , H01L27/3251 , H01L27/3258 , H01L33/50 , H01L51/5218 , H01L51/5228 , H01L51/5234 , H01L51/5253 , H01L51/5262 , H01L51/5271 , H01L2251/5315
Abstract: The present invention is directed to a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, and a method of manufacturing this light emitting device. An upper end portion of an insulating material 19 that covers an end portion of a first electrode 18 is formed to have a curved surface having a radius of curvature, a second electrode 23a is formed to have a slant face as going from its center portion toward its end portion along the curved surface. Light emitted from a light emitting layer comprising an organic material 20 that is formed on the second electrode 23a is reflected at the slant face of the second electrode 23a to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
Abstract translation: 本发明涉及一种发光装置及其制造方法，该发光装置被构造成增加从发光元件发射之后沿特定方向取出的光量。 覆盖第一电极18的端部的绝缘材料19的上端部形成为具有曲率半径的曲面，第二电极23a形成为具有从其中心部朝向的倾斜面 其端部沿着曲面。 从包含形成在第二电极23a上的有机材料20的发光层发射的光在第二电极23a的倾斜面反射，以增加沿图1中箭头所示方向取出的光的总量。 1A。
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公开(公告)号：US20160268359A1
公开(公告)日：2016-09-15
申请号：US15161363
申请日：2016-05-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroki OHARA , Hideaki KUWABARA
IPC: H01L27/32 , H01L29/24 , H01L21/02 , H01L29/786
CPC classification number: H01L27/3262 , G06F1/163 , H01L21/02614 , H01L27/1218 , H01L27/1222 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L29/78696 , H04B1/16
Abstract: One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.
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公开(公告)号：US20160133683A1
公开(公告)日：2016-05-12
申请号：US15000710
申请日：2016-01-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Toru Takayama , Junya MARUYAMA , Yumiko OHNO , Masakazu MURAKAMI , Toshiji HAMATANI , Hideaki KUWABARA , Shunpei YAMAZAKI
CPC classification number: H01L27/3276 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1266 , H01L27/14634 , H01L27/14643 , H01L27/14683 , H01L27/3272 , H01L29/66757 , H01L29/78603 , H01L31/105 , H01L51/0024 , H01L51/003 , H01L51/5212 , H01L51/5253 , H01L2221/68368
Abstract: (OBJECT) The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials.(MEANS FOR SOLVING THE PROBLEM) In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.
Abstract translation: （目的）本发明的目的是提供一种减轻半导体器件及其制造方法，该方法是将待剥离的层粘贴到各种基材上。 （解决问题的手段）在本发明中，在基板上形成被剥离层，然后将具有蚀刻阻挡膜的密封基板上的粘合材料粘贴在被剥离层上，然后仅除去 密封衬底通过蚀刻或抛光。 剩余的蚀刻阻挡膜用作阻挡膜。 此外，可以将磁片作为粘贴部件粘贴。
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45.发明申请公开(公告)号：US20150155304A1
公开(公告)日：2015-06-04
申请号：US14620409
申请日：2015-02-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/124 , H01L27/1214 , H01L27/1225 , H01L27/1262 , H01L29/45 , H01L29/78606 , H01L29/7869
Abstract: An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor.
Abstract translation: 目的是降低半导体器件的制造成本。 目的是提高半导体器件的开口率。 目的是使半导体器件的显示部分显示更高清晰度的图像。 目的在于提供一种可以高速运转的半导体装置。 该半导体器件包括一个基板上的驱动电路部分和显示部分。 驱动器电路部分包括：使用金属形成源电极和漏极的驱动电路TFT，并且使用氧化物半导体形成沟道层; 以及使用金属形成的驱动电路布线。 显示部分包括：使用氧化物导体形成源极和漏极的像素TFT，并且使用氧化物半导体形成半导体层; 以及使用氧化物导体形成的显示布线。
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Patent Agency Ranking
公开(公告)号：US20150153861A1
公开(公告)日：2015-06-04
申请号：US14552214
申请日：2014-11-24
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Hajime KIMURA , Hideaki KUWABARA , Koji DAIRIKI
IPC: G06F3/041
CPC classification number: G06F3/0488 , G06F1/3265 , G06F2203/04101 , G06F2203/04104 , G06F2203/04108 , Y02B70/123 , Y02D10/153
Abstract: A data processing device with low power consumption is provided. The data processing device includes a flexible position input portion for sensing proximity or a touch of an object such as a user's palm and finger. The flexible position input portion overlaps with a display portion and includes a first region, a second region facing the first region, and a third region between the first region and the second region. In the case where part of the first region or the second region is held by a user for a certain period, supply of image signals to the part is selectively stopped. Alternatively, a sensing in the part is selectively stopped.
Abstract translation: 提供一种低功耗的数据处理装置。 数据处理装置包括用于感测物体（例如用户的手掌和手指）的接近或触摸的柔性位置输入部分。 柔性位置输入部分与显示部分重叠，并且包括第一区域，面向第一区域的第二区域以及第一区域和第二区域之间的第三区域。 在第一区域或第二区域的一部分由使用者持续一定时间的情况下，选择性地停止对该部件的图像信号的供给。 或者，选择性地停止部件中的感测。
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47.发明申请公开(公告)号：US20140293183A1
公开(公告)日：2014-10-02
申请号：US14244440
申请日：2014-04-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroyuki MIYAKE , Hideaki KUWABARA , Tatsuya TAKAHASHI
IPC: H01L27/12 , G02F1/1368
CPC classification number: H01L27/1225 , G02F1/1368 , H01L21/02554 , H01L21/02565 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/45 , H01L29/78645
Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
Abstract translation: 半导体器件的开口率提高。 驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物 栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层 层。 栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。
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公开(公告)号：US20140027803A1
公开(公告)日：2014-01-30
申请号：US13952863
申请日：2013-07-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Satoshi SEO , Hideaki KUWABARA
IPC: H01L33/50
CPC classification number: H01L27/3279 , H01L27/322 , H01L27/3246 , H01L27/3248 , H01L27/3251 , H01L27/3258 , H01L33/50 , H01L51/5218 , H01L51/5228 , H01L51/5234 , H01L51/5253 , H01L51/5262 , H01L51/5271 , H01L2251/5315
Abstract: The present invention is directed to a light emitting device structured so as to increase the amount of light which is taken out in a certain direction after emitted from a light emitting element, and a method of manufacturing this light emitting device. An upper end portion of an insulating material 19 that covers an end portion of a first electrode 18 is formed to have a curved surface having a radius of curvature, a second electrode 23a is formed to have a slant face as going from its center portion toward its end portion along the curved surface. Light emitted from a light emitting layer comprising an organic material 20 that is formed on the second electrode 23a is reflected at the slant face of the second electrode 23a to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.
Abstract translation: 本发明涉及一种发光装置及其制造方法，该发光装置被构造成增加从发光元件发射之后沿特定方向取出的光量。 覆盖第一电极18的端部的绝缘材料19的上端部形成为具有曲率半径的曲面，第二电极23a形成为具有从其中心部朝向的倾斜面 其端部沿着曲面。 从包含形成在第二电极23a上的有机材料20的发光层发射的光在第二电极23a的倾斜面反射，以增加沿图1中箭头所示方向取出的光的总量。 1A。
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公开(公告)号：US20130078762A1
公开(公告)日：2013-03-28
申请号：US13680349
申请日：2012-11-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kengo AKIMOTO , Toshinari SASAKI , Hideaki KUWABARA
IPC: H01L29/66
CPC classification number: H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/45 , H01L29/66742 , H01L29/786 , H01L29/78606 , H01L29/7869 , H01L29/78696
Abstract: An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.
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公开(公告)号：US20240353895A1
公开(公告)日：2024-10-24
申请号：US18758088
申请日：2024-06-28
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hideaki KUWABARA , Masaaki HIROKI
IPC: G06F1/16 , G02F1/1333 , G02F1/1345 , G02F1/1368
CPC classification number: G06F1/163 , G02F1/133305 , G02F1/13452 , G02F1/1368 , G06F1/1635 , G06F1/1643 , G06F1/1654
Abstract: A novel electronic device is provided. Alternatively an electronic device of a novel embodiment is provided. An electronic device includes a ring portion and a display portion. The display portion is flexible. The display portion has a top surface and a first side surface in contact with at least one side of the top surface. The first side surface has a curved surface. The top surface includes a first display region. The first side surface includes a second display region. The first display region and the second display region are continuously provided. The electronic device is mounted such that the ring portion is in contact with a user's finger.
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