-
公开(公告)号：US20190333976A1
公开(公告)日：2019-10-31
申请号：US16509819
申请日：2019-07-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masakatsu OHNO , Hiroki ADACHI , Satoru IDOJIRI , Koichi TAKESHIMA
IPC: H01L27/32 , B23K26/0622 , B23K26/04 , B23K26/06 , B23K26/08 , H01L51/52 , H01L29/66 , H01L29/786 , H01L51/00 , H01L51/56 , H01L27/12 , H01L29/24
Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
-
公开(公告)号：US20190096977A1
公开(公告)日：2019-03-28
申请号：US16204102
申请日：2018-11-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masakatsu OHNO , Hiroki ADACHI , Satoru IDOJIRI , Koichi TAKESHIMA
IPC: H01L27/32 , B23K26/08 , H01L51/00 , H01L51/56 , H01L29/786 , H01L27/12 , B23K26/0622 , H01L51/52 , B23K26/04 , B23K26/06 , H01L29/66 , H01L29/24 , H01L41/314 , H01L51/50
Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
-
公开(公告)号：US20180166524A1
公开(公告)日：2018-06-14
申请号：US15894117
申请日：2018-02-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masakatsu OHNO , Hiroki ADACHI , Satoru IDOJIRI , Koichi TAKESHIMA
CPC classification number: H01L27/3272 , B23K26/04 , B23K26/0617 , B23K26/0622 , B23K26/0643 , B23K26/0648 , B23K26/083 , H01L27/1225 , H01L27/1266 , H01L27/322 , H01L27/3244 , H01L27/3258 , H01L27/3262 , H01L29/24 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L41/314 , H01L51/0024 , H01L51/0027 , H01L51/003 , H01L51/0097 , H01L51/5096 , H01L51/5246 , H01L51/5253 , H01L51/5284 , H01L51/56 , H01L2227/323 , H01L2227/326 , H01L2251/5338 , H01L2251/558 , Y02E10/549 , Y02P70/521
Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
-
公开(公告)号：US20180085859A1
公开(公告)日：2018-03-29
申请号：US15707017
申请日：2017-09-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Seiji YASUMOTO , Naoto GOTO , Satoru IDOJIRI
IPC: B23K26/57 , H01L27/12 , H01L27/32 , G02F1/1362
CPC classification number: B23K26/57 , G02F1/136286 , G02F2001/13613 , G02F2201/44 , H01L27/1218 , H01L27/1225 , H01L27/124 , H01L27/1266 , H01L27/3276 , H01L51/003 , H01L2227/326
Abstract: The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of the semiconductor device is increased. The semiconductor device is manufactured by performing a step of performing plasma treatment on a first surface of a substrate; a step of forming a first layer over the first surface with the use of a material containing a resin or a resin precursor; a step of forming a resin layer by performing heat treatment on the first layer; and a step of separating the substrate and the resin layer from each other. In the plasma treatment, the first surface is exposed to an atmosphere containing one or more of hydrogen, oxygen, and water vapor.
-
Patent Agency Ranking
公开(公告)号：US20180040647A1
公开(公告)日：2018-02-08
申请号：US15666758
申请日：2017-08-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Seiji YASUMOTO , Yuka KOBAYASHI , Satoru IDOJIRI
IPC: H01L27/12 , H01L21/47 , H01L27/32 , H01L29/786 , H01L21/683 , H01L21/02 , H01L29/66
CPC classification number: H01L27/1266 , G02F1/133305 , G02F1/133553 , G02F1/133603 , G02F1/136227 , G02F1/1368 , G02F2001/133354 , G02F2001/13613 , G02F2201/44 , H01L21/02118 , H01L21/02255 , H01L21/02282 , H01L21/47 , H01L21/6835 , H01L27/1218 , H01L27/1225 , H01L27/323 , H01L27/3232 , H01L27/3262 , H01L29/66969 , H01L29/7869 , H01L2221/6835 , H01L2221/68381 , H01L2227/323 , H01L2227/326
Abstract: To increase the yield of the separation process. To produce display devices formed through the separation process with higher mass productivity. A first layer is formed using a material including a resin or a resin precursor over a substrate. Then, first heat treatment is performed on the first layer, whereby a first resin layer including a residue of an oxydiphthalic acid is formed. Then, a layer to be separated is formed over the first resin layer. Then, the layer to be separated and the substrate are separated from each other. The first heat treatment is performed in an atmosphere containing oxygen.
-
公开(公告)号：US20160300865A1
公开(公告)日：2016-10-13
申请号：US15100476
申请日：2014-11-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masakatsu OHNO , Hiroki ADACHI , Satoru IDOJIRI , Koichi TAKESHIMA
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/1266 , H01L21/6835 , H01L27/1222 , H01L27/1285 , H01L27/3244 , H01L29/78648 , H01L29/78675 , H01L51/003 , H01L2221/6835
Abstract: An object is to provide a novel separation method or a novel manufacturing method of a device. In the case where a bond of M——W (M is a given element) is divided by application of physical force, a liquid is absorbed into the gap, whereby the bond becomes bonds of M—OH HO—W with a longer bond distance and the detachment can be promoted accordingly. In the detachment, a roller such as a drum roller can be used. Part of the roller surface may have adhesiveness. For example, an adhesive tape or the like may be put on part of the roller surface. By rotating the roller, the layer to be separated is wound and detached from the substrate having an insulating surface.
Abstract translation: 目的在于提供一种新的分离方法或新颖的器件制造方法。 在M-W（M为给定元素）的键通过施加物理力分离的情况下，液体被吸收到间隙中，由此键变为具有较长键的M-OH HO-W的键 距离和分离可以相应推动。 在拆卸中，可以使用诸如鼓辊的辊。 辊表面的一部分可能具有粘合性。 例如，可以将胶带等放置在辊表面的一部分上。 通过旋转辊，待分离的层从具有绝缘表面的基板上卷绕并分离。
-
公开(公告)号：US20160247868A1
公开(公告)日：2016-08-25
申请号：US15145246
申请日：2016-05-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masakatsu OHNO , Hiroki ADACHI , Satoru IDOJIRI , Koichi TAKESHIMA
CPC classification number: H01L27/3272 , B23K26/04 , B23K26/0617 , B23K26/0622 , B23K26/0643 , B23K26/0648 , B23K26/083 , H01L27/1225 , H01L27/1266 , H01L27/322 , H01L27/3244 , H01L27/3258 , H01L27/3262 , H01L29/24 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L41/314 , H01L51/0024 , H01L51/0027 , H01L51/003 , H01L51/0097 , H01L51/5096 , H01L51/5246 , H01L51/5253 , H01L51/5284 , H01L51/56 , H01L2227/323 , H01L2227/326 , H01L2251/5338 , H01L2251/558 , Y02E10/549 , Y02P70/521
Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
-
公开(公告)号：US20160243647A1
公开(公告)日：2016-08-25
申请号：US15145260
申请日：2016-05-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Masakatsu OHNO , Hiroki ADACHI , Satoru IDOJIRI , Koichi TAKESHIMA
IPC: B23K26/0622 , B23K26/06 , B23K26/08 , B23K26/04
CPC classification number: H01L27/3272 , B23K26/04 , B23K26/0617 , B23K26/0622 , B23K26/0643 , B23K26/0648 , B23K26/083 , H01L27/1225 , H01L27/1266 , H01L27/322 , H01L27/3244 , H01L27/3258 , H01L27/3262 , H01L29/24 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L41/314 , H01L51/0024 , H01L51/0027 , H01L51/003 , H01L51/0097 , H01L51/5096 , H01L51/5246 , H01L51/5253 , H01L51/5284 , H01L51/56 , H01L2227/323 , H01L2227/326 , H01L2251/5338 , H01L2251/558 , Y02E10/549 , Y02P70/521
Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
-
公开(公告)号：US20150151531A1
公开(公告)日：2015-06-04
申请号：US14553227
申请日：2014-11-25
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masakatsu OHNO , Hiroki ADACHI , Satoru IDOJIRI , Koichi TAKESHIMA
CPC classification number: B32B43/006 , B32B37/0053 , B32B37/025 , B32B37/12 , B32B37/1207 , B32B38/10 , B32B2037/1253 , B32B2037/268 , B32B2457/20 , B32B2457/208 , H01L27/322 , H01L27/323 , H01L27/3262 , H01L51/0013 , H01L51/003 , H01L51/524 , H01L51/5253 , H01L51/5284 , H01L51/56 , H01L2227/323 , H01L2227/326 , H01L2251/5315 , H01L2251/5338 , Y10T156/1111 , Y10T156/1174 , Y10T156/1928 , Y10T156/195
Abstract: The yield of a peeling process is improved. A peeling apparatus includes a structure body with a convex surface and a stage with a supporting surface which faces the convex surface. The structure body can hold a first member of a process member between the convex surface and the supporting surface. The stage can hold a second member of the process member. The radius of curvature of the convex surface is less than the radius of curvature of the supporting surface. The linear velocity of the convex surface is greater than or equal to the speed of a rotation center of the structure body passing the stage. The first member is wound along the convex surface to be separated from the second member.
Abstract translation: 剥离过程的产率提高。 剥离装置包括具有凸面的结构体和具有与凸面对置的支撑面的台。 结构体可以在凸表面和支撑表面之间保持处理构件的第一构件。 舞台可以容纳进程成员的第二个成员。 凸面的曲率半径小于支撑面的曲率半径。 凸面的线速度大于或等于通过平台的结构体的旋转中心的速度。 第一构件沿凸形表面缠绕以与第二构件分离。
-
-
-
-
-
-
-
-
Search Results
49
records
(took 0.049 seconds)
