公开(公告)号：US07745237B2

公开(公告)日：2010-06-29

申请号：US11626402

申请日：2007-01-24

申请人： Souichi Katagiri ,  Yasunari Sohda ,  Masahiko Ogino

发明人： Souichi Katagiri ,  Yasunari Sohda ,  Masahiko Ogino

IPC分类号： H01L21/66 ,  H01L21/461 ,  G01R31/26

CPC分类号： G03F9/7049 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/703 ,  G03F9/7084 ,  G03F9/7088

摘要： Method of forming a pattern by a nanoimprint technique starts with preparing a mold with nanostructures on its surface. The mold is pressed against a substrate or plate coated with a resin film. The positions of alignment marks formed on the rear surface of the plate coated with the resin film are detected. Thus, a relative alignment between the mold and the plate coated with the resin film is performed.

摘要翻译： 通过纳米压印技术形成图案的方法开始于在其表面上制备具有纳米结构的模具。 将模具压在涂有树脂膜的基板或板上。 检测在涂覆有树脂膜的板的后表面上形成的对准标记的位置。 因此，执行模具和涂覆有树脂膜的板之间的相对对准。

公开(公告)号：US07655907B2

公开(公告)日：2010-02-02

申请号：US11704227

申请日：2007-02-09

申请人： Sayaka Tanimoto ,  Hiromasa Yamanashi ,  Muneyuki Fukuda ,  Yasunari Sohda

发明人： Sayaka Tanimoto ,  Hiromasa Yamanashi ,  Muneyuki Fukuda ,  Yasunari Sohda

IPC分类号： H01J37/26

CPC分类号： H01J37/265 ,  H01J37/28 ,  H01J2237/04735 ,  H01J2237/216 ,  H01J2237/2817

摘要： It is to provide a technology that can quickly process many measurement points on a substrate by a primary charged particle beam. In a control system, with respect to each measurement point (irradiation position of the primary charged particle beam) on a wafer, a calculator obtains a probability of a surface potential at a relevant measurement point that is obtained from a surface potential distribution function of the wafer and is stored in a data storage unit. Based on the probability, the calculator determines an amplitude of a set parameter (for example, retarding voltage) of charged particle optics at the relevant measurement point. Then the calculator checks the focus state of the primary charged particle beam by changing the set parameter in the range of the determined amplitude, and determines the set parameter to be used for measurement.

摘要翻译： 它是提供一种能够通过初级带电粒子束快速处理衬底上许多测量点的技术。 在控制系统中，对于晶片上的每个测量点（初级带电粒子束的照射位置），计算器获得从相对测量点的表面电位分布函数获得的相关测量点的表面电位的概率， 并存储在数据存储单元中。 基于概率，计算器确定相关测量点处的带电粒子光学器件的设定参数（例如延迟电压）的幅度。 然后，计算器通过在确定的幅度的范围内改变设定参数来检查主要带电粒子束的聚焦状态，并确定要用于测量的设定参数。

公开(公告)号：US20090136116A1

公开(公告)日：2009-05-28

申请号：US12292660

申请日：2008-11-24

申请人： Nobuhiro Okai ,  Shinji Okazaki ,  Yasunari Sohda ,  Yoshinori Nakayama

发明人： Nobuhiro Okai ,  Shinji Okazaki ,  Yasunari Sohda ,  Yoshinori Nakayama

IPC分类号： G06K9/00

CPC分类号： G06K9/00 ,  G06K2209/19 ,  G06T7/0004

摘要： The present invention provides a reticle inspection technology that enables a relative position between patterns to be evaluated for a pattern that may become a defect at the time of exposure to a sample, such as a wafer, in the double patterning technology on the same layer. An apparatus for inspecting a reticle for inspecting two reticles that are used in order to form patterns in the same layer on a substrate using the double patterning technology has: a coordinate information input unit for inputting coordinate information of a pattern of a measuring object; an image input unit for acquiring images of patterns of the two reticles based on the obtained coordinate information; an image overlay unit for overlaying the images of the two reticles at the same coordinates; a relative position calculation unit for finding the relative position between the patterns on the two reticles; an evaluation unit for assigning an index of the overlaying accuracy based on the relative position and evaluates whether the two reticles need repair; and an evaluation result output unit for outputting an evaluation result.

摘要翻译： 本发明提供了一种掩模版检查技术，其能够在同一层上的双重图案化技术中，使图案之间的相对位置能够在暴露于样品（例如晶片）时成为缺陷的图案被评估。 用于检查用于检查用于使用双重图案形成技术在基板上形成图案的图案的两个掩模版的掩模版的装置具有：用于输入测量对象的图案的坐标信息的坐标信息输入单元; 图像输入单元，用于基于所获得的坐标信息获取两个标线图案的图像; 用于在相同坐标处叠加两个光罩的图像的图像叠加单元; 相对位置计算单元，用于找到两个标线之间的图案之间的相对位置; 评估单元，用于基于所述相对位置分配所述重叠精度的指标，并评估所述两个标线是否需要修理; 以及评价结果输出单元，用于输出评估结果。

公开(公告)号：US07476882B2

公开(公告)日：2009-01-13

申请号：US11431705

申请日：2006-05-11

申请人： Yoshinori Nakayama ,  Yasunari Sohda

发明人： Yoshinori Nakayama ,  Yasunari Sohda

IPC分类号： G21K7/00 ,  G01N23/00 ,  A61N5/00 ,  G21G5/00

CPC分类号： H01J37/265 ,  G01B15/00 ,  H01J37/28 ,  H01J37/3045 ,  H01J2237/15 ,  H01J2237/1536 ,  H01J2237/2816 ,  H01J2237/2826

摘要： There is provided an electron-beam calibration technology whereby deflection calibration used in the electron-beam system can be performed with a high accuracy. A one-dimensional diffraction grating is located such that direction of the grating becomes parallel to an electron-beam scanning direction. Next, the electron-beam scanning is horizontally performed while displacing the electron-beam scanning in the perpendicular direction so that the electron-beam scanning displacement quantity will coincide with pitch size of the grating. From a secondary-electron signal image acquired, based on the presence or absence of moiré interference fringes, it can be judged whether or not the deflection calibration in the direction perpendicular to the electron-beam scanning has been correctly performed.

摘要翻译： 提供了一种电子束校准技术，由此可以高精度地执行电子束系统中使用的偏转校准。 定位一维衍射光栅使得光栅的方向平行于电子束扫描方向。 接下来，在垂直方向移动电子束扫描的同时水平地执行电子束扫描，使得电子束扫描位移量与光栅的间距尺寸一致。 根据所获得的二次电子信号图像，可以基于是否存在莫尔条纹，可以判断是否正确地进行了与电子束扫描垂直的方向上的偏转校准。

公开(公告)号：US20080203285A1

公开(公告)日：2008-08-28

申请号：US12010852

申请日：2008-01-30

申请人： Yasunari Sohda ,  Yoshinori Nakayama ,  Hajime Koyanagi ,  Keiichiro Hitomi

发明人： Yasunari Sohda ,  Yoshinori Nakayama ,  Hajime Koyanagi ,  Keiichiro Hitomi

IPC分类号： G01D18/00

CPC分类号： H01J37/28 ,  B82Y15/00 ,  H01J2237/2826

摘要： Correction of widths obtained by measurement of a sample with the use of a scanning electron microscope is executed with greater precision. Use is made of a standard sample 40 for correction comprising a plurality of correction mark members 42a, 42b, . . . , the respective correction mark members 42a, 42b, being lined up at specified intervals kept therebetween in a specified direction, and respective widths thereof, in the specified direction, differing from each other so as to be of respective sizes as pre-set. Measurement of the respective widths of the correction mark members 42a, 42b, . . . is made to obtain respective measurement widths while authorized widths of the respective widths of the correction mark members 42a, 42b, . . . are kept stored in an image processing unit of the scanning electron microscope to thereby find differences between the respective measurement widths, and authorized widths corresponding thereto, and the differences are stored as respective correction functions, which are used in correcting the measurement width of the sample.

摘要翻译： 以更高的精度执行通过使用扫描电子显微镜测量样品获得的宽度的校正。 使用由用于校正的标准样品40组成，包括多个校正标记构件42,4a，42b。 。 。 ，各个校正标记部件42,4a，42b以规定的间隔排列成规定的方向，并且在规定的方向上保持其各自的宽度彼此不同，从而具有预先设定的各自的尺寸 。 校正标记部件42,4a，42b，...的各自宽度的测量。 。 。 被制成以获得相应的测量宽度，同时校正标记部件42,4a，42b的相应宽度的授权宽度。 。 。 保存在扫描电子显微镜的图像处理单元中，从而发现各测量宽度与其对应的授权宽度之间的差异，并且将这些差值存储为用于校正样品的测量宽度的各种校正函数 。

公开(公告)号：US20080121791A1

公开(公告)日：2008-05-29

申请号：US11939596

申请日：2007-11-14

申请人： Yoshinori Nakayama ,  Yasunari Sohda ,  Keiichiro Hitomi ,  Hajime Koyanagi

发明人： Yoshinori Nakayama ,  Yasunari Sohda ,  Keiichiro Hitomi ,  Hajime Koyanagi

IPC分类号： H01J37/26 ,  G01D18/00

CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J37/263 ,  H01J2237/24578 ,  H01J2237/2816 ,  H01J2237/2823 ,  H01J2237/2826 ,  H01J2237/30433 ,  H01J2237/3142 ,  H01J2237/31732

摘要： The present invention provides a standard reference component for calibration for performing magnification calibration used in the scanning electron microscope with high precision, and provides a scanning electron microscope technique using it. Provided is a standard reference component for calibration for calibrating a scanning electron microscope that measures a length of a pattern in an observation area from information on the intensity of secondary electrons or reflected electrons generated by scanning an incident electron beam in the observation area on a measuring sample, having: a first substrate on which a multiple-layer is laminated and a second substrate with a recess for holding the first substrate, wherein the first substrate is held in the recess of the second substrate so that a normal direction of the multiple-layer surface may be roughly perpendicular to a normal direction of the second substrate surface, and the multiple-layer has a multiple-layer structure of a film containing silicon and a film containing molybdenum.

摘要翻译： 本发明提供了一种用于校准的标准参考部件，用于以高精度执行扫描电子显微镜中使用的放大校准，并提供使用它的扫描电子显微镜技术。 提供了用于校准扫描电子显微镜的标准参考部件，该扫描电子显微镜从关于通过扫描观察区域中的入射电子束产生的二次电子或反射电子的强度的信息来测量观察区域中的图案的长度 具有：层叠有多层的第一基板和具有用于保持所述第一基板的凹部的第二基板，其中，所述第一基板保持在所述第二基板的所述凹部中， 层表面可以大致垂直于第二基板表面的法线方向，并且多层具有含硅的膜和含有钼的膜的多层结构。

公开(公告)号：US20070164458A1

公开(公告)日：2007-07-19

申请号：US11623776

申请日：2007-01-17

申请人： Masahiko Ogino ,  Akihiro Miyauchi ,  Takashi Ando ,  Chiseki Haginoya ,  Susumu Komoriya ,  Yasunari Sohda ,  Souichi Katagiri ,  Hiroya Ohta ,  Yoshinori Nakayama

发明人： Masahiko Ogino ,  Akihiro Miyauchi ,  Takashi Ando ,  Chiseki Haginoya ,  Susumu Komoriya ,  Yasunari Sohda ,  Souichi Katagiri ,  Hiroya Ohta ,  Yoshinori Nakayama

IPC分类号： H01L23/544 ,  H01L21/47

CPC分类号： H01L21/76838 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/7076 ,  G11B5/855 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a mold in which a pattern is formed of a fine concavo-convex shape, two or more of alignment marks for determining a relative positional relation between a substrate and a mold are formed concentrically. Moreover, a damaged mark is identified from the positional information and shape of the respective marks, and an alignment between the mold and the substrate to which a resin film is applied is carried out excluding the damaged mark.

摘要翻译： 在图案形成为微细凹凸形状的模具中，同心地形成用于确定基板和模具之间的相对位置关系的两个或更多个对准标记。 此外，根据各个标记的位置信息和形状来识别损坏的标记，并且除了损坏的标记之外，执行模具和施加了树脂膜的基板之间的对准。

公开(公告)号：US20060197453A1

公开(公告)日：2006-09-07

申请号：US11355952

申请日：2006-02-17

申请人： Yoshinori Nakayama ,  Hiroya Ohta ,  Makoto Sakakibara ,  Yasunari Sohda ,  Masaki Hosoda

发明人： Yoshinori Nakayama ,  Hiroya Ohta ,  Makoto Sakakibara ,  Yasunari Sohda ,  Masaki Hosoda

IPC分类号： H01K1/62

CPC分类号： H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/3045

摘要： An electron beam writing technology which enables highly accurate deflection correction of a minute field used in an electron beam writing system is provided. In this system, a function to move an electron beam by a deflection means through high-speed deflection scanning so as to repeat formation of a cyclic patterned electron beam and a function to move the patterned electron beam on cyclic correction marks by the deflection means through low-speed deflection scanning in synchronization with one cycle of the repetition are provided, and reflected electrons or secondary electrons emitted from the correction marks and the vicinity thereof or transmitted electrons transmitted through the correction marks in the low-speed deflection scanning are detected so as to correct the position or deflection amount of the electron beam based on the detection result.

摘要翻译： 提供一种电子束写入技术，其能够对电子束写入系统中使用的微小场进行高精度的偏转校正。 在该系统中，通过偏转装置通过高速偏转扫描来移动电子束以便重复形成循环图案化电子束的功能，以及通过偏转装置通过偏转装置将图案化电子束移动到循环校正标记上的功能，通过 提供与重复的一个周期同步的低速偏转扫描，检测从校正标记及其附近发射的反射电子或二次电子或在低速偏转扫描中透过校正标记的透射电子，以便 基于检测结果校正电子束的位置或偏转量。

公开(公告)号：US06903353B2

公开(公告)日：2005-06-07

申请号：US10125439

申请日：2002-04-19

申请人： Masato Muraki ,  Yasunari Sohda ,  Shinichi Hashimoto

发明人： Masato Muraki ,  Yasunari Sohda ,  Shinichi Hashimoto

IPC分类号： G03F7/20 ,  H01J37/04 ,  H01J37/09 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/153

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3177 ,  H01J2237/0437 ,  H01J2237/31774

摘要： A high-precision multi-charged-particle-beam exposure apparatus has a charged particle source (ES) that emits a charged particle beam. An aperture array (AA) having plural apertures divides the charged particle beam from the charged particle source (ES) into plural charged particle beams and a lens array (LA) having plural electron lens forms plural intermediate images of the charged particle source (ES) on substantially one plane with the plural charged particle beams from the aperture array (AA). A blanker array (BA) located on the plane where the plurality of intermediate images are to be formed has plural blankers, and a reduction electron optical system that reduces and projects the images of the charged particle source (ES) onto a substrate.

摘要翻译： 高精度多带电粒子束曝光装置具有发射带电粒子束的带电粒子源（ES）。 具有多个孔的孔径阵列（AA）将带电粒子束从带电粒子源（ES）分割成多个带电粒子束，并且具有多个电子透镜的透镜阵列（LA）形成带电粒子源（ES）的多个中间图像， 在基本上一个平面上具有来自孔径阵列（AA）的多个带电粒子束。 位于要形成多个中间图像的平面上的消隐阵列（BA）具有多个消隐器，以及还原电子光学系统，其将带电粒子源（ES）的图像减少并投影到基板上。

公开(公告)号：US06667486B2

公开(公告)日：2003-12-23

申请号：US10219769

申请日：2002-08-16

申请人： Hiroya Ohta ,  Yasunari Sohda ,  Norio Saitou ,  Haruo Yoda ,  Yoshikiyo Yui ,  Shin'ichi Hashimoto

发明人： Hiroya Ohta ,  Yasunari Sohda ,  Norio Saitou ,  Haruo Yoda ,  Yoshikiyo Yui ,  Shin'ichi Hashimoto

IPC分类号： H01J3708

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/304 ,  H01J37/3177

摘要： The present invention provides a high-precision and high-speed electron beam exposure technique which corrects the position of each beam in a multi-beam exposure method without using a deflection array and a huge and high-precision driving circuit. In an electron beam exposure method for forming a desired pattern onto a specimen by independently controlling emission and scanning of a plurality of electron beams, a deviation between a pattern formed by each of the plurality of electron beams and the desired pattern is controlled by shifting the position of pattern data of the pattern formed by each of the plurality of electron beams.

摘要翻译： 本发明提供一种高精度和高速电子束曝光技术，其不使用偏转阵列和巨大且高精度的驱动电路来校正多光束曝光方法中的每个光束的位置。 在通过独立地控制多个电子束的发射和扫描来形成期望图案到电子束的电子束曝光方法中，由多个电子束中的每一个形成的图案与期望的图案之间的偏差通过使 由多个电子束中的每一个形成的图案的图案数据的位置。