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    Semiconductor light emitting element, and its manufacturing method
    41.
    发明授权
    Semiconductor light emitting element, and its manufacturing method 有权
    半导体发光元件及其制造方法

    公开(公告)号：US06303405B1

    公开(公告)日：2001-10-16

    申请号：US09404727

    申请日：1999-09-24

    申请人： Hiroaki Yoshida ,  Kazuhiko Itaya ,  Shinji Saito ,  Johji Nishio ,  Shinya Nunoue

    发明人： Hiroaki Yoshida ,  Kazuhiko Itaya ,  Shinji Saito ,  Johji Nishio ,  Shinya Nunoue

    IPC分类号： H01L2100

    CPC分类号： H01L21/76251 ,  H01L33/007 ,  H01L33/0079 ,  H01L2221/68318

    摘要： A semiconductor light emitting element of nitride compound semiconductors excellent in cleavability, heat radiation and resistance to leakage is made by epitaxially grow a nitride compound semiconductor layers on a substrate of sapphire, for example, and thereafter separating the substrate. For separating the substrate, there are a technique using a abruption mechanism susceptible to a stress such as a “lift-off layer” and a recesses on a substrate. A technique using laser light to cause a local dense heat stress at the abruption mechanism is effective. A nitride compound semiconductor obtained by separating the substrate may be used as a new substrate to epitaxially grow high-quality nitride compound semiconductors thereon.

    摘要翻译： 例如，通过在蓝宝石衬底上外延生长氮化物半导体层，然后分离衬底，进行切割性，散热性和耐漏电性优异的氮化物半导体发光元件。 为了分离衬底，存在使用易受诸如“剥离层”和衬底上的凹陷等应力敏感的剥离机构的技术。 使用激光在剥离机制下引起局部致密热应激的技术是有效的。 通过分离衬底获得的氮化物化合物半导体可以用作新的衬底，以在其上外延生长高质量的氮化物半导体。

    SEMICONDUCTOR LIGHT EMITTING ELEMENT
    45.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
    半导体发光元件

    公开(公告)号：US20080179623A1

    公开(公告)日：2008-07-31

    申请号：US11850404

    申请日：2007-09-05

    申请人： Koichi TACHIBANA ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

    发明人： Koichi TACHIBANA ,  Hajime Nago ,  Shinji Saito ,  Shinya Nunoue ,  Genichi Hatakoshi

    IPC分类号： H01L29/24

    CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/16

    摘要： A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0° to 45° in inclination angle into a direction, and which is in a range of 0° to 10° in inclination angle into a direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.

    摘要翻译： 半导体发光元件包括：由III-V族半导体形成的{0001} n型半导体衬底，其倾斜角度在0°至45°的范围内，并且其为 在倾斜角度为0°至10°的范围内成为<11-20>方向; 在n型半导体衬底上由III-V半导体形成的n型层; 由n型层上方的III-V族半导体形成的n型引导层; 由n型引导层上方的III-V族半导体形成的有源层; 由有源层上方的III-V族半导体形成的p型第一引导层; p型接触层，其由p型第一引导层上方的III-V族半导体形成; 以及在p型第一引导层和p型接触层之间由III-V族半导体形成的凹凸层。 该凹凸层具有在顶面交替规则地配置的凹部和凸部，并且p型杂质浓度比p型接触层低。

    Semiconductor device and method for manufacturing the same
    46.
    发明申请
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20070014323A1

    公开(公告)日：2007-01-18

    申请号：US11365531

    申请日：2006-03-02

    申请人： Koichi Tachibana ,  Shinji Saito ,  Shinya Nunoue

    发明人： Koichi Tachibana ,  Shinji Saito ,  Shinya Nunoue

    IPC分类号： H01S5/00 ,  H01S3/04

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/0281 ,  H01S5/0287 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3216

    摘要： Disclosed herein is a high-reliability semiconductor device. The laser diode includes: a substrate; a multi-layer film including a first conductivity type cladding layer provided on the substrate, a first conductivity type guide layer provided on the first conductivity type cladding layer, an active layer provided on the first conductivity type guide layer, a second conductivity type guide layer provided on the active layer, and a second conductivity type cladding layer provided on the second conductivity type guide layer, each of the layers being made of a nitride-based III-V group compound semiconductor; a first protective layer made of nitride and provided on a light emitting surface of the laser diode; and a second protective layer provided on the first protective layer and made of nitride having a refractive index different from that of the first protective layer.

    摘要翻译： 这里公开了高可靠性半导体器件。 激光二极管包括：基板; 包括设置在基板上的第一导电型包覆层的多层膜，设置在第一导电型包覆层上的第一导电型引导层，设置在第一导电型引导层上的有源层，第二导电型引导层 设置在所述有源层上，以及设置在所述第二导电型导向层上的第二导电型包覆层，所述层由氮化物系III-V族化合物半导体构成。 由氮化物制成的第一保护层，设置在激光二极管的发光表面上; 以及设置在第一保护层上并由与第一保护层的折射率不同的折射率的氮化物制成的第二保护层。

    Semiconductor light-emitting element and light-emitting device
    47.
    发明申请
    Semiconductor light-emitting element and light-emitting device 有权
    半导体发光元件及发光元件

    公开(公告)号：US20060214171A1

    公开(公告)日：2006-09-28

    申请号：US11352365

    申请日：2006-02-13

    申请人： Shinji Saito ,  Shinya Nunoue

    发明人： Shinji Saito ,  Shinya Nunoue

    IPC分类号： H01L33/00

    CPC分类号： H01L33/385 ,  H01L33/20 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor light-emitting element has a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor, a pair of first high-reflection layers each being disposed to sandwich the active layer in a first direction orthogonal to the laminated direction of the laminated section, and a low-reflection layer and a second high-reflection layer each being disposed to sandwich the active layer in a second direction orthogonal to the laminated direction and crossing to the first direction.

    摘要翻译： 半导体发光元件具有层叠部，该层叠部具有由半导体构成的有源层，第一和第二包层各自设置为夹持有源层并由半导体构成，一对第一高反射层为 被配置成沿着与所述层叠部的层叠方向正交的第一方向夹持所述有源层，以及低反射层和第二高反射层，各自设置成沿与所述层叠方向正交的第二方向夹持所述有源层 并跨越第一个方向。

    Semiconductor light emitting device
    48.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08526477B2

    公开(公告)日：2013-09-03

    申请号：US13034329

    申请日：2011-02-24

    申请人： Shinji Saito ,  Jongil Hwang ,  Shinya Nunoue

    发明人： Shinji Saito ,  Jongil Hwang ,  Shinya Nunoue

    IPC分类号： H01S5/028 ,  H01S5/22 ,  H01S5/00

    CPC分类号： H01S5/164 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3063 ,  H01S5/34333 ,  H01S2304/04

    摘要： A semiconductor light emitting device of one embodiment includes: a substrate; an n-type layer of an n-type nitride semiconductor on the substrate; an active layer of a nitride semiconductor on the n-type semiconductor layer; a p-type layer of a p-type nitride semiconductor on the active layer. The p-type layer has a ridge stripe shape. The device has an end-face layer of a nitride semiconductor formed on an end face of the n-type semiconductor layer, the active layer, and the p-type semiconductor layer. The end face is perpendicular to an extension direction of the ridge stripe shape. The end-face layer has band gap wider than the active layer. The end-face layer has Mg concentration in the range of 5E16 atoms/cm3 to 5E17 atoms/cm3 at a region adjacent to the p-type layer.

    摘要翻译： 一个实施例的半导体发光器件包括：衬底; n型氮化物半导体的n型层; n型半导体层上的氮化物半导体的有源层; 在有源层上的p型氮化物半导体的p型层。 p型层具有脊条形状。 该器件具有形成在n型半导体层，有源层和p型半导体层的端面上的氮化物半导体的端面层。 端面垂直于脊条形状的延伸方向。 端面层具有比有源层宽的带隙。 端面层在与p型层相邻的区域具有在5E16原子/ cm3至5E17原子/ cm3范围内的Mg浓度。

    Method of fabricating a semiconductor light-emitting device
    49.
    发明授权
    Method of fabricating a semiconductor light-emitting device 有权
    制造半导体发光器件的方法

    公开(公告)号：US07795059B2

    公开(公告)日：2010-09-14

    申请号：US12098309

    申请日：2008-04-04

    申请人： Shinji Saito ,  Shinya Nunoue

    发明人： Shinji Saito ,  Shinya Nunoue

    IPC分类号： H01L21/00

    CPC分类号： H01L33/385 ,  H01L33/20 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor light-emitting element has a laminated section which has an active layer made of a semiconductor, and first and second clad layers each being disposed to sandwich the active layer and made of a semiconductor, a pair of first high-reflection layers each being disposed to sandwich the active layer in a first direction orthogonal to the laminated direction of the laminated section, and a low-reflection layer and a second high-reflection layer each being disposed to sandwich the active layer in a second direction orthogonal to the laminated direction and crossing to the first direction.

    摘要翻译： 半导体发光元件具有层叠部，该层叠部具有由半导体构成的有源层，第一和第二包层各自设置为夹持有源层并由半导体构成，一对第一高反射层为 被配置成沿着与所述层叠部的层叠方向正交的第一方向夹持所述有源层，以及低反射层和第二高反射层，各自设置成沿与所述层叠方向正交的第二方向夹持所述有源层 并跨越第一个方向。