公开(公告)号：US20110068360A1

公开(公告)日：2011-03-24

申请号：US12955620

申请日：2010-11-29

申请人： Hajime NAGO ,  Koichi Tachibana ,  Kotaro Zaima ,  Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

发明人： Hajime NAGO ,  Koichi Tachibana ,  Kotaro Zaima ,  Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

IPC分类号： H01L33/60 ,  H01L33/32

CPC分类号： H01L33/32 ,  F21K9/00 ,  H01L27/156 ,  H01L33/16 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/16 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.

摘要翻译： 本发明提供了一种具有优异显色特性的半导体发光元件，一种半导体发光元件的制造方法和一种发光器件。 半导体发光元件包括：半导体衬底，其具有作为上表面的倾斜面的凸部和形成在凸部的任一侧上的凹部，凹部的宽度比凸部小， 凹部的底面位于比凸部的上表面更深的位置; 以及由氮化物系半导体构成并形成在半导体基板上至少覆盖凸部的发光层。

公开(公告)号：US20080237569A1

公开(公告)日：2008-10-02

申请号：US12037358

申请日：2008-02-26

申请人： Hajime NAGO ,  Koichi Tachibana ,  Kotaro Zaima ,  Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

发明人： Hajime NAGO ,  Koichi Tachibana ,  Kotaro Zaima ,  Shinji Saito ,  Shinya Nunoue ,  Toshiyuki Oka

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  F21K9/00 ,  H01L27/156 ,  H01L33/16 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/16 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.

摘要翻译： 本发明提供了一种具有优异显色特性的半导体发光元件，一种半导体发光元件的制造方法和一种发光器件。 半导体发光元件包括：半导体衬底，其具有作为上表面的倾斜面的凸部和形成在凸部的任一侧上的凹部，凹部的宽度比凸部小， 凹部的底面位于比凸部的上表面更深的位置; 以及由氮化物系半导体构成并形成在半导体基板上至少覆盖凸部的发光层。

公开(公告)号：US20120049157A1

公开(公告)日：2012-03-01

申请号：US13221456

申请日：2011-08-30

申请人： Hajime NAGO ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shigeya Kimura ,  Shinya Nunoue

发明人： Hajime NAGO ,  Koichi Tachibana ,  Toshiyuki Oka ,  Shigeya Kimura ,  Shinya Nunoue

IPC分类号： H01L33/06 ,  H01L33/30

CPC分类号： H01L33/32 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06

摘要： According to one embodiment, in a nitride semiconductor light emitting device, a first clad layer includes an n-type nitride semiconductor. An active layer is formed on the first clad layer, and includes an In-containing nitride semiconductor. A GaN layer is formed on the active layer. A first AlGaN layer is formed on the GaN layer, and has a first Al composition ratio. A p-type second AlGaN layer is formed on the first AlGaN layer, has a second Al composition ratio higher than the first Al composition ratio, and contains a larger amount of Mg than the GaN layer and the first AlGaN layer. A second clad layer is formed on the second AlGaN layer, and includes a p-type nitride semiconductor.

摘要翻译： 根据一个实施例，在氮化物半导体发光器件中，第一覆盖层包括n型氮化物半导体。 在第一包层上形成有源层，并且包括含In氮化物半导体。 在有源层上形成GaN层。 第一AlGaN层形成在GaN层上，并具有第一Al组成比。 在第一AlGaN层上形成p型第二AlGaN层，具有高于第一Al组分比的第二Al组分比，并且含有比GaN层和第一AlGaN层更大量的Mg。 第二覆盖层形成在第二AlGaN层上，并且包括p型氮化物半导体。

公开(公告)号：US20100187497A1

公开(公告)日：2010-07-29

申请号：US12716668

申请日：2010-03-03

申请人： Hajime NAGO ,  Koichi Tachibana ,  Shinji Saito ,  Yoshiyuki Harada ,  Shinya Nunoue

发明人： Hajime NAGO ,  Koichi Tachibana ,  Shinji Saito ,  Yoshiyuki Harada ,  Shinya Nunoue

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A semiconductor device includes an underlying layer, and a light emitting layer which is formed on the underlying layer and in which a barrier layer made of InAlGaN and a quantum well layer made of InGaN are alternately stacked.

摘要翻译： 半导体器件包括下层，并且形成在下层上并且其中由InAlGaN制成的势垒层和由InGaN制成的量子阱层的发光层交替堆叠。

公开(公告)号：US20120138896A1

公开(公告)日：2012-06-07

申请号：US13398239

申请日：2012-02-16

申请人： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

发明人： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

IPC分类号： H01L33/04

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

公开(公告)号：US20110204411A1

公开(公告)日：2011-08-25

申请号：US12875560

申请日：2010-09-03

申请人： Hajime NAGO ,  Koichi TACHIBANA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

发明人： Hajime NAGO ,  Koichi TACHIBANA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

IPC分类号： H01L33/32 ,  H01L33/30

CPC分类号： H01L33/24 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32

摘要： According to one embodiment, a crystal growth method is disclosed for growing a crystal of a nitride semiconductor on a major surface of a substrate. The major surface is provided with asperities. The method can include depositing a buffer layer on the major surface at a rate of not more than 0.1 micrometers per hour. The buffer layer includes GaxAl1-xN (0.1≦x

摘要翻译： 根据一个实施例，公开了用于在衬底的主表面上生长氮化物半导体的晶体的晶体生长方法。 主表面配有凹凸。 该方法可以包括以不大于0.1微米/小时的速率在主表面上沉积缓冲层。 缓冲层包括GaxAl1-xN（0.1＆nlE; x <0.5），并且具有不小于20纳米且不大于50纳米的厚度。 此外，该方法可以包括在沉积缓冲层时在高于衬底的温度的温度下在缓冲层上生长包括氮化物半导体的晶体。

公开(公告)号：US20110198583A1

公开(公告)日：2011-08-18

申请号：US12873662

申请日：2010-09-01

申请人： Hajime NAGO ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

发明人： Hajime NAGO ,  Koichi Tachibana ,  Toshiki Hikosaka ,  Shigeya Kimura ,  Shinya Nunoue

IPC分类号： H01L33/02 ,  H01L33/00 ,  H01L33/30 ,  H01L33/12

CPC分类号： H01L33/12 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/32 ,  H01S5/34333

摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains Inx1Ga1-x1N. The body is provided between the n-type semiconductor layer and the light emitting portion. The body includes: first layers containing GaN, and a second layer provided between the first layers. The second layer contains Inx2Ga1-x2N. Second In composition ratio x2 is not less than 0.6 times of first In composition ratio x1 and is lower than the first In composition x1. The intermediate layer is provided between the body and the light emitting portion and includes a third layer containing Aly1Ga1-y1N (0

摘要翻译： 根据一个实施例，半导体发光器件包括n型和p型半导体层，发光部分，多层结构体和n侧中间层。 发光部分设置在半导体层之间。 发光部分包括含有GaN的阻挡层，以及设置在阻挡层之间的阱层。 阱层包含Inx1Ga1-x1N。 本体设置在n型半导体层和发光部之间。 主体包括：包含GaN的第一层，以及设置在第一层之间的第二层。 第二层包含Inx2Ga1-x2N。 第二组成比x2不小于第一In组成比x1的0.6倍，并且低于第一In组成x1。 中间层设置在主体和发光部分之间，并且包括含有Aly1Ga1-y1N（0

公开(公告)号：US20100102296A1

公开(公告)日：2010-04-29

申请号：US12652827

申请日：2010-01-06

申请人： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

发明人： Koichi TACHIBANA ,  Chie HONGO ,  Hajime NAGO ,  Shinya NUNOUE

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/305 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2224 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04 ,  Y10S257/918

摘要： A semiconductor device has an active layer, a first semiconductor layer of first conductive type, an overflow prevention layer disposed between the active layer and the first semiconductor layer, which is doped with impurities of first conductive type and which prevents overflow of electrons or holes, a second semiconductor layer of first conductive type disposed at least one of between the active layer and the overflow prevention layer and between the overflow prevention layer and the first semiconductor layer, and an impurity diffusion prevention layer disposed between the first semiconductor layer and the active layer, which has a band gap smaller than those of the overflow prevention layer, the first semiconductor layer and the second semiconductor layer and which prevents diffusion of impurities of first conductive type.

摘要翻译： 半导体器件具有有源层，第一导电类型的第一半导体层，设置在有源层和第一半导体层之间的防溢出层，其被掺杂有第一导电类型的杂质并且防止电子或空穴溢出， 第一导电类型的第二半导体层设置在有源层和溢出防止层之间以及溢出防止层和第一半导体层之间的至少之一以及设置在第一半导体层和有源层之间的杂质扩散防止层 其具有比溢出防止层，第一半导体层和第二半导体层的带隙小的带隙，并且防止第一导电类型的杂质的扩散。