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    Method of repairing process induced dielectric damage by the use of GCIB surface treatment using gas clusters of organic molecular species
    41.
    发明授权
    Method of repairing process induced dielectric damage by the use of GCIB surface treatment using gas clusters of organic molecular species 有权
    通过使用有机分子物种的气体簇的GCIB表面处理来修复工艺引起的介电损伤的方法

    公开(公告)号：US07838428B2

    公开(公告)日：2010-11-23

    申请号：US11609040

    申请日：2006-12-11

    申请人： Shyng-Tsong Chen ,  Nancy R. Klymko ,  Anita Madan ,  Sanjay Mehta ,  Steven E. Molis

    发明人： Shyng-Tsong Chen ,  Nancy R. Klymko ,  Anita Madan ,  Sanjay Mehta ,  Steven E. Molis

    IPC分类号： H01L21/311

    CPC分类号： H01L21/3105 ,  H01L21/31155 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76831

    摘要： When an interconnect structure is built on porous ultra low k (ULK) material, the bottom and/or sidewall of the trench and/or via is usually damaged by a following metallization or cleaning process which may be suitable for dense higher dielectric materials. Embodiments of the present invention may provide a method of repairing process induced dielectric damage from forming an interconnect structure on an inter-layer dielectric (ILD) material. The method includes treating an exposed area of the ILD material to create a carbon-rich area, and metallizing the carbon-rich area. One embodiment includes providing treatment to an exposed sidewall area of the ILD material to create a carbon-rich area by irradiating the exposed area using a gas cluster ion beam (GCIB) generated through a gas including a straight chain or branched, aliphatic or aromatic hydrocarbon, and metallizing the carbon-rich area.

    摘要翻译： 当互连结构构建在多孔超低k（ULK）材料上时，沟槽和/或通孔的底部和/或侧壁通常被以下金属化或清洁工艺损坏，这可能适合于较高的介电材料。 本发明的实施例可以提供一种通过在层间电介质（ILD）材料上形成互连结构来修复工艺引起的介电损伤的方法。 该方法包括处理ILD材料的暴露区域以产生富含碳的区域，以及使富含碳的区域金属化。 一个实施例包括通过使用通过包括直链或支链，脂族或芳族烃的气体产生的气体簇离子束（GCIB）照射暴露区域来向ILD材料的暴露的侧壁区域提供处理以产生富碳区域 ，并且富含碳的区域金属化。

    Titanium-Nitride Removal
    44.
    发明申请
    Titanium-Nitride Removal 有权
    去除钛 - 氮化物

    公开(公告)号：US20130171829A1

    公开(公告)日：2013-07-04

    申请号：US13343190

    申请日：2012-01-04

    申请人： John A. Fitzsimmons ,  Shyng-Tsong Chen ,  David L. Rath ,  Muthumanickam Sankarapandian ,  Oscar van der Straten

    发明人： John A. Fitzsimmons ,  Shyng-Tsong Chen ,  David L. Rath ,  Muthumanickam Sankarapandian ,  Oscar van der Straten

    IPC分类号： H01L21/3065 ,  C11D7/60

    CPC分类号： C09K13/00 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76804

    摘要： A chemical solution that removes undesired metal hard mask yet remains selective to the device wiring metallurgy and dielectric materials. The present invention decreases aspect ratio by selective removal of the metal hard mask before the metallization of the receiving structures without adverse damage to any existing metal or dielectric materials required to define the semiconductor device, e.g. copper metallurgy or device dielectric. Thus, an improved aspect ratio for metal fill without introducing any excessive trapezoidal cross-sectional character to the defined metal receiving structures of the device will result.

    摘要翻译： 一种去除不需要的金属硬掩模的化学溶液，但仍然对器件布线冶金和电介质材料具有选择性。 本发明通过在接收结构金属化之前选择性去除金属硬掩模而不损害限定半导体器件所需的任何现有金属或介电材料，从而降低纵横比，例如， 铜冶金或器件电介质。 因此，将导致金属填充物的改进的纵横比，而不会对设备的限定的金属接收结构引入任何过大的梯形横截面特征。

    Method of forming an interconnect structure
    45.
    发明授权
    Method of forming an interconnect structure 失效
    形成互连结构的方法

    公开(公告)号：US07358182B2

    公开(公告)日：2008-04-15

    申请号：US11315923

    申请日：2005-12-22

    申请人： Heidi Lee Baks ,  Shyng-Tsong Chen ,  Timothy Joseph Dalton ,  Nicholas Colvin Masi Fuller ,  Kaushik Arun Kumar

    发明人： Heidi Lee Baks ,  Shyng-Tsong Chen ,  Timothy Joseph Dalton ,  Nicholas Colvin Masi Fuller ,  Kaushik Arun Kumar

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76802 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76811

    摘要： A method of forming damascene interconnect structure in an organo-silicate glass layer without causing damage to the organo-silicate glass material. The method includes forming a stack of hardmask layers over the organo-silicate glass layer, defining openings in the hardmask and organo-silicate glass layers using a combination of plasma etch and plasma photoresist removal processes and performing one or more additional plasma etch processes that do not include oxygen containing species to etch the openings to depths required for forming the damascene interconnect structures and to remove any organo-silicate material damaged by the combination of plasma etch and plasma photoresist removal processes.

    摘要翻译： 在有机硅酸盐玻璃层中形成镶嵌互连结构而不会损坏有机硅酸盐玻璃材料的方法。 该方法包括在有机硅酸盐玻璃层上形成硬掩模层堆叠，使用等离子体蚀刻和等离子体光致抗蚀剂去除方法的组合在硬掩模和有机硅酸盐玻璃层中限定开口，并执行一个或多个额外的等离子体蚀刻工艺 不包括含氧物质，以将开口蚀刻到形成镶嵌互连结构所需的深度，并除去由等离子体蚀刻和等离子体光致抗蚀剂去除工艺的组合损坏的任何有机硅酸盐材料。

    Method of forming an interconnect structure
    46.
    发明申请
    Method of forming an interconnect structure 失效
    形成互连结构的方法

    公开(公告)号：US20070148966A1

    公开(公告)日：2007-06-28

    申请号：US11315923

    申请日：2005-12-22

    申请人： Heidi Baks ,  Shyng-Tsong Chen ,  Timothy Dalton ,  Nicholas Fuller ,  Kaushik Kumar

    发明人： Heidi Baks ,  Shyng-Tsong Chen ,  Timothy Dalton ,  Nicholas Fuller ,  Kaushik Kumar

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76802 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76811

    摘要： A method of forming damascene interconnect structure in an organo-silicate glass layer without causing damage to the organo-silicate glass material. The method includes forming a stack of hardmask layers over the organo-silicate glass layer, defining openings in the hardmask and organo-silicate glass layers using a combination of plasma etch and plasma photoresist removal processes and performing one or more additional plasma etch processes that do not include oxygen containing species to etch the openings to depths required for forming the damascene interconnect structures and to remove any organo-silicate material damaged by the combination of plasma etch and plasma photoresist removal processes.

    摘要翻译： 在有机硅酸盐玻璃层中形成镶嵌互连结构而不会损坏有机硅酸盐玻璃材料的方法。 该方法包括在有机硅酸盐玻璃层上形成硬掩模层堆叠，使用等离子体蚀刻和等离子体光致抗蚀剂去除方法的组合在硬掩模和有机硅酸盐玻璃层中限定开口，并执行一个或多个额外的等离子体蚀刻工艺 不包括含氧物质，以将开口蚀刻到形成镶嵌互连结构所需的深度，并除去由等离子体蚀刻和等离子体光致抗蚀剂去除工艺的组合损坏的任何有机硅酸盐材料。

    THREE PHOTOMASK SIDEWALL IMAGE TRANSFER METHOD
    50.
    发明申请
    THREE PHOTOMASK SIDEWALL IMAGE TRANSFER METHOD 失效
    三光子图像传输方法

    公开(公告)号：US20140057436A1

    公开(公告)日：2014-02-27

    申请号：US13592683

    申请日：2012-08-23

    申请人： Shyng-Tsong Chen ,  Ryan O. Jung ,  Neal V. Lafferty ,  Yunpeng Yin

    发明人： Shyng-Tsong Chen ,  Ryan O. Jung ,  Neal V. Lafferty ,  Yunpeng Yin

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76816 ,  H01L21/0337 ,  H01L21/31144

    摘要： A three photomask image transfer method. The method includes using a first photomask, defining a set of mandrels on a hardmask layer on a substrate; forming sidewall spacers on sidewalls of the mandrels, the sidewall spacers spaced apart; removing the set of mandrels; using a second photomask, removing regions of the sidewall spacers forming trimmed sidewall spacers and defining a pattern of first features; forming a pattern transfer layer on the trimmed sidewall spacers and the hardmask layer not covered by the trimmed sidewall spacers; using a third photomask, defining a pattern of second features in the transfer layer, at least one of the second features abutting at least one feature of the pattern of first features; and simultaneously transferring the pattern of first features and the pattern of second features into the hardmask layer thereby forming a patterned hardmask layer.

    摘要翻译： 三个光掩模图像传输方法。 该方法包括使用第一光掩模，在衬底上的硬掩模层上限定一组心轴; 在所述心轴的侧壁上形成侧壁间隔件，所述侧壁间隔物间隔开; 去除一组心轴; 使用第二光掩模，去除侧壁间隔物的区域，形成修剪的侧壁间隔物并限定第一特征的图案; 在修剪的侧壁间隔物和未被修剪的侧壁间隔物覆盖的硬掩模层上形成图案转移层; 使用第三光掩模，限定所述转移层中的第二特征的图案，所述第二特征中的至少一个邻接所述第一特征图案的至少一个特征; 同时将第一特征的图案和第二特征的图案转移到硬掩模层中，从而形成图案化的硬掩模层。