公开(公告)号：US20060210889A1

公开(公告)日：2006-09-21

申请号：US11374009

申请日：2006-03-14

申请人： Masashi Fujimoto

发明人： Masashi Fujimoto

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/70 ,  G03F1/26

摘要： In a method for forming a plurality of gate patterns in parallel with each other on a photoresist layer within one circuit block, at least one dummy gate pattern is formed in parallel with the gate patterns when a pitch between said gate patterns is larger than a predetermined maximum pitch, so that pitches between the gate patterns including the dummy gate pattern are smaller than the predetermined maximum pitch. Then, a photolithography process is performed upon the photoresist layer by using a phase shift photomask having first and second openings whose difference in phase is π. The first and second openings alternate between the gate patterns including the dummy gate pattern to form phase edges therein.

摘要翻译： 在一个电路块内的光致抗蚀剂层上形成彼此平行的多个栅极图案的方法中，当所述栅极图案之间的间距大于预定的栅极图案时，形成与栅极图案平行的至少一个伪栅极图案 使得包括伪栅极图案的栅极图案之间的间距小于预定的最大间距。 然后，通过使用具有相位差为π的第一和第二开口的相移光掩模在光致抗蚀剂层上进行光刻工艺。 第一和第二开口在包括伪栅极图案的栅极图案之间交替，以在其中形成相位边缘。

公开(公告)号：US06812155B2

公开(公告)日：2004-11-02

申请号：US10342796

申请日：2003-01-15

申请人： Masashi Fujimoto

发明人： Masashi Fujimoto

IPC分类号： H01L21302

CPC分类号： G03F1/29 ,  G03F1/26 ,  G03F1/30 ,  G03F1/70 ,  G03F7/70283 ,  G03F7/70466

摘要： A pattern formation method of the present invention is one that forms a circuit pattern in a resist film upon a wafer 141 by exposure using a plurality of phase-shift masks. A first phase-shift mask is for an isolated pattern including a pattern with a distance between adjacent patterns (inter-pattern distance) W1 of at least 400 nm, and a second phase-shift mask is for a dense pattern including patterns with inter-pattern distances W2 under 400 nm. Affects of the optical proximity effect are eliminated through providing optimum exposure conditions for the distances between adjacent patterns W1 and W2 using the plurality of phase-shift masks in accordance with respective inter-pattern distances W1 and W2.

摘要翻译： 本发明的图案形成方法是通过使用多个相移掩模的曝光在晶片141上形成抗蚀剂膜中的电路图案的图案形成方法。 第一相移掩模用于包括具有至少400nm的相邻图案（图案间距离）W1之间的距离的图案的隔离图案，并且第二相移掩模用于包括具有间隔图案的图案的致密图案， 400nm以下的图案距离W2。 通过使用根据各图案间距离W1和W2的多个相移掩模，为相邻图案W1和W2之间的距离提供最佳曝光条件来消除光学邻近效应的影响。

公开(公告)号：US06699626B2

公开(公告)日：2004-03-02

申请号：US10315096

申请日：2002-12-10

申请人： Masashi Fujimoto

发明人： Masashi Fujimoto

IPC分类号： G03F900

CPC分类号： G03F1/34 ,  G03F1/26 ,  G03F1/70 ,  G03F7/2022

摘要： A mask set has a first mask including a shielding region shielding a first pattern-defining light; a second mask including a phase-shifting region having a phase shifter edge and a non-phase-shifting region adjacent to the phase-shifting region on the phase shifter edge. A first phase of the first light portion passing through the phase-shifting region differs from a second phase of the second light portion. The first and second masks are aligned such that the phase shifter edge overlaps on the shielding region.

摘要翻译： 掩模组具有包括屏蔽第一图案限定光的屏蔽区域的第一掩模; 第二掩模，包括具有移相器边缘的相移区域和与移相器边缘上的相移区域相邻的非相移区域。 穿过相移区域的第一光部分的第一相位与第二光部分的第二相位不同。 对准第一和第二掩模，使得移相器边缘与屏蔽区域重叠。

公开(公告)号：US06517982B2

公开(公告)日：2003-02-11

申请号：US09741375

申请日：2000-12-21

申请人： Masashi Fujimoto

发明人： Masashi Fujimoto

IPC分类号： G03C500

CPC分类号： G03F1/34 ,  G03F1/26 ,  G03F1/70 ,  G03F7/2022

摘要： A method of forming a photoresist pattern by a photolithography technique is composed of: providing a photoresist layer; exposing the photoresist layer to a first pattern-defining light using a first mask; and exposing the photoresist layer to a second pattern-defining light using a second mask. The first mask includes a shielding region shielding the first pattern-defining light. The second mask includes a phase-shifting region having a phase shifter edge and a non-phase-shifting region adjacent to the phase-shifting region on the phase shifter edge. A first light portion of the second pattern-defining light passes through the phase-shifting region. A second light portion of the second pattern-defining light passes through the non-phase-shifting region. A first phase of the first light portion differs from a second phase of the second light portion. The first and second masks are aligned such that the phase shifter edge overlaps on the shielding region.

摘要翻译： 通过光刻技术形成光致抗蚀剂图案的方法包括：提供光致抗蚀剂层;使用第一掩模将光致抗蚀剂层暴露于第一图案限定光; 以及使用第二掩模将所述光致抗蚀剂层附着到第二图案限定光。 第一掩模包括屏蔽第一图案限定光的屏蔽区域。 第二掩模包括具有移相器边缘的移相区域和与移相器边缘上的相移区域相邻的非相移区域。 第二图案限定光的第一光部分通过相移区域。 第二图案限定光的第二光部分穿过非相移区域。 第一光部的第一相与第二光部的第二相不同。 对准第一和第二掩模，使得移相器边缘与屏蔽区域重叠。

公开(公告)号：US06449029B1

公开(公告)日：2002-09-10

申请号：US09604589

申请日：2000-06-27

申请人： Masashi Fujimoto

发明人： Masashi Fujimoto

IPC分类号： G03B2742

CPC分类号： G03F7/70358 ,  G03F7/70691 ,  G03F9/7026 ,  G03F9/7034 ,  H01L22/12

摘要： For a photolithography apparatus, an adjustment method is provided which comprises first and second processes. In the first process, a semiconductor wafer is successively set in one of cell positions. In each of the cell positions, a laser beam is directed to the surface of the wafer and light reflecting off the wafer surface is detected and analyzed to determine a vertical offset position of the wafer at each cell position. Data representing the vertical offset position is stored in a memory and the first process is repeated until the offset position data are derived from all cell positions. In the second process, tilt angles of the wafer at all cell positions are determined from the stored offset position data, and angle data representing the determined tilt angles are stored in a memory. The wafer is then set in one of the cell positions, and the angle data is read from the memory corresponding to the set cell position and the wafer surface is horizontally aligned. The offset position data is read from the memory corresponding to the set cell position and the wafer surface is vertically moved to the focal point. The second process is repeated until the wafer is set to all cell positions.

摘要翻译： 对于光刻设备，提供了包括第一和第二处理的调整方法。 在第一工序中，将半导体晶片依次设置在单元位置之一中。 在每个单元位置中，激光束被引导到晶片的表面，并且检测和分析从晶片表面反射的光，以确定晶片在每个单元位置处的垂直偏移位置。 表示垂直偏移位置的数据被存储在存储器中，并且重复第一处理直到偏移位置数据从所有单元位置导出。 在第二过程中，从所存储的偏移位置数据确定所有单元位置处的晶片的倾斜角度，并且将表示确定的倾斜角度的角度数据存储在存储器中。 然后将晶片设置在单元位置中的一个位置，并且从对应于设置单元位置的存储器读取角度数据，并且晶片表面水平对准。 从对应于设定单元位置的存储器读取偏移位置数据，并且晶片表面垂直移动到焦点。 重复第二个过程，直到将晶片设置为所有单元位置。

公开(公告)号：US6048648A

公开(公告)日：2000-04-11

申请号：US37362

申请日：1998-03-10

申请人： Shuichi Hashimoto ,  Masashi Fujimoto

发明人： Shuichi Hashimoto ,  Masashi Fujimoto

IPC分类号： G03F1/36 ,  G03F1/54 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/36

摘要： In a mask including an optical shield layer formed on a transparent substrate, the light transmittance of the shield layer is changed in accordance with the density of patterns of the shield layer or the thickness of a photoresist layer on a semiconductor substrate.

摘要翻译： 在包括形成在透明基板上的光屏蔽层的掩模中，屏蔽层的透光率根据屏蔽层的图案的密度或半导体衬底上的光致抗蚀剂层的厚度而改变。

公开(公告)号：US08708392B2

公开(公告)日：2014-04-29

申请号：US13582155

申请日：2011-02-23

申请人： Taiyou Otsuka ,  Toshio Araki ,  Eiji Mizutani ,  Ryo Hattori ,  Masashi Fujimoto ,  Shinji Yamada ,  Yasunori Takenaka

发明人： Taiyou Otsuka ,  Toshio Araki ,  Eiji Mizutani ,  Ryo Hattori ,  Masashi Fujimoto ,  Shinji Yamada ,  Yasunori Takenaka

IPC分类号： B60N2/30

CPC分类号： B60N2/3011 ,  B60N2/3043 ,  B60N2/307 ,  B60N2/309

摘要： A retractable vehicle seat in which a seat main body disposed on a vehicle floor is flipped up laterally, so as to be retracted in a vehicle interior side wall of which the upper portion is inwardly inclined, may include a connection mechanism that is configured to rotatably connect the seat main body to a support stand. The connection mechanism includes a four-link mechanism having a stationary link integral with the support stand, an intermediate link integral with the seat main body, and a first link and a second link that connect these two links. The second link is configured to increase an angle between the first link and the intermediate link as the seat main body is flipped up.

摘要翻译： 一种可伸缩的车辆座椅，其中设置在车辆地板上的座椅主体侧向地翻转，以便在其上部向内倾斜的车辆内侧壁中缩回，可以包括连接机构，该连接机构构造成可旋转 将座椅主体连接到支撑架上。 连接机构包括具有与支撑架一体的固定连杆的四连杆机构，与座椅主体一体的中间连杆，以及连接这两个连杆的第一连杆和第二连杆。 第二连杆构造成当座椅主体翻转时增加第一连杆和中间连杆之间的角度。

公开(公告)号：US20130057040A1

公开(公告)日：2013-03-07

申请号：US13582155

申请日：2011-02-23

申请人： Taiyou Otsuka ,  Toshio Araki ,  Eiji Mizutani ,  Ryo Hattori ,  Masashi Fujimoto ,  Shinji Yamada ,  Yasunori Takenaka

发明人： Taiyou Otsuka ,  Toshio Araki ,  Eiji Mizutani ,  Ryo Hattori ,  Masashi Fujimoto ,  Shinji Yamada ,  Yasunori Takenaka

IPC分类号： B60N2/30

CPC分类号： B60N2/3011 ,  B60N2/3043 ,  B60N2/307 ,  B60N2/309

摘要： A retractable vehicle seat in which a seat main body disposed on a vehicle floor is flipped up laterally, so as to be retracted in a vehicle interior side wall of which the upper portion is inwardly inclined, may include a connection mechanism that is configured to rotatably connect the seat main body to a support stand. The connection mechanism includes a four-link mechanism having a stationary link integral with the support stand, an intermediate link integral with the seat main body, and a first link and a second link that connect these two links. The second link is configured to increase an angle between the first link and the intermediate link as the seat main body is flipped up.

摘要翻译： 一种可伸缩的车辆座椅，其中设置在车辆地板上的座椅主体侧向地翻转，以便在其上部向内倾斜的车辆内侧壁中缩回，可以包括连接机构，该连接机构构造成可旋转 将座椅主体连接到支撑架上。 连接机构包括具有与支撑架一体的固定连杆的四连杆机构，与座椅主体一体的中间连杆，以及连接这两个连杆的第一连杆和第二连杆。 第二连杆构造成当座椅主体翻转时增加第一连杆和中间连杆之间的角度。

公开(公告)号：US08304662B2

公开(公告)日：2012-11-06

申请号：US11806680

申请日：2007-06-01

申请人： Akiyoshi Saitou ,  Takeshi Midorikawa ,  Toru Kuraishi ,  Chikayuki Kumagai ,  Masashi Fujimoto ,  Kenichiro Abe

发明人： Akiyoshi Saitou ,  Takeshi Midorikawa ,  Toru Kuraishi ,  Chikayuki Kumagai ,  Masashi Fujimoto ,  Kenichiro Abe

IPC分类号： H05K1/16

CPC分类号： H05K1/0224 ,  H01L2924/0002 ,  H05K1/025 ,  H05K1/0253 ,  H05K1/116 ,  H05K3/4069 ,  H05K3/4602 ,  H05K3/4614 ,  H05K3/4661 ,  H05K2201/09236 ,  H05K2201/093 ,  H05K2201/09336 ,  H05K2201/0959 ,  H05K2201/09636 ,  H05K2201/09718 ,  H05K2203/0425 ,  H05K2203/063 ,  Y10T29/49117 ,  H01L2924/00

摘要： A buildup board includes a buildup layer having a multilayer structure and/or a core layer having a multilayer structure. The multilayer structure includes a signal wiring pattern, a pad connected to the signal wiring pattern, an insulating part arranged around the pad on the same layer as the pad, and a conductor arranged around the insulating part on the same layer as the pad. The multilayer structure has at least two different keepouts where the keepout is defined as a minimum interval between an outline of the pad and the conductor closest to the pad on the same layer.

摘要翻译： 堆积板包括具有多层结构的堆积层和/或具有多层结构的芯层。 多层结构包括信号布线图案，连接到信号布线图案的焊盘，与焊盘相同的层上布置在焊盘周围的绝缘部分，以及布置在与焊盘相同的层上的绝缘部分周围的导体。 所述多层结构具有至少两个不同的保持部，其中所述挡板被定义为所述焊盘的轮廓与最靠近所述焊盘在同一层上的导体之间的最小间隔。

公开(公告)号：US07870514B2

公开(公告)日：2011-01-11

申请号：US11867841

申请日：2007-10-05

申请人： Masashi Fujimoto

发明人： Masashi Fujimoto

IPC分类号： G06F17/50

CPC分类号： G06F17/5068 ,  G06F2217/12 ,  Y02P90/265

摘要： A method of designing a pattern of a hole pattern having a configuration, in which grid of interval smaller than a minimum permissible pitch according to a design rule for a semiconductor integrated circuit is provided in a pattern drawing, a hole pattern is arranged on a first lattice point which is an intersection of the grid, and, at the same time, other hole patterns are not arranged on a second lattice point group which is on the periphery of the first lattice point, and is adjacent to the first lattice point is provided. And, the number of hole patterns, which may be arranged in a third lattice point group of a plurality of lattice points which are on the periphery of a second lattice point group and are within a predetermined distance from the first lattice point, is controlled.

摘要翻译： 在图案图形中设置具有根据半导体集成电路的设计规则的具有小于最小允许间距的间隔格栅的孔图案的图案的方法，孔图案布置在第一 作为栅格的交叉点的网格点，并且同时，在第一格子点的周围并且与第一格子点相邻的第二格子点组上不设置其他孔图案 。 并且，控制可以布置在位于第二格子点组的周边并且距离第一格子点的预定距离内的多个格子点的第三格子点组中的孔图案的数量。