Magnetic element and magnetic element array
    41.
    发明授权
    Magnetic element and magnetic element array 失效
    磁性元件和磁性元件阵列

    公开(公告)号:US06906949B1

    公开(公告)日:2005-06-14

    申请号:US10401865

    申请日:2003-03-31

    摘要: A magnetic element comprises a first magnetic reference part (A) including a first ferromagnetic substance pinned in magnetization (M1) substantially in a first direction, a second magnetic reference part (E) including a second ferromagnetic substance pinned in magnetization (M3) substantially in a second direction, and a magnetic recording part (C) provided between the first and second magnetic reference parts. The magnetic recording part includes a third ferromagnetic substance. A spin transfer intermediate part (B) is provided between the first magnetic reference part and the magnetic recording part. An intermediate part (D) is provided between the second magnetic reference part and the magnetic recording part. A magnetization (M2) of the third ferromagnetic substance can be directed in a direction parallel or anti-parallel to the first direction by passing a writing current between the first magnetic reference part and the magnetic recording part. A relative relation between the second direction and the direction of the magnetization of the third ferromagnetic substance can be detected by passing a sense current between the second magnetic reference part and the magnetic recording part.

    摘要翻译: 磁性元件包括:第一磁性参考部分(A),包括基本上沿第一方向被钉扎在磁化(M 1)中的第一铁磁物质;第二磁性参考部分(E),包括在磁化(M 3)中被钉扎的第二铁磁性物质, 基本上在第二方向上的磁记录部分(C)和设置在第一和第二磁参考部分之间的磁记录部分(C)。 磁记录部分包括第三铁磁物质。 自旋转移中间部分(B)设置在第一磁参考部分和磁记录部分之间。 中间部分(D)设置在第二磁参考部分和磁记录部分之间。 第三铁磁性物质的磁化强度(M 2)可以通过使第一磁性参考部件和磁性记录部件之间的写入电流通过而在与第一方向平行或反平行的方向上被引导。 可以通过在第二磁参考部分和磁记录部分之间通过感测电流来检测第二方向与第三铁磁物质的磁化方向之间的相对关系。

    Magnetic random access memory
    42.
    发明授权
    Magnetic random access memory 失效
    磁性随机存取存储器

    公开(公告)号:US06900490B2

    公开(公告)日:2005-05-31

    申请号:US10649986

    申请日:2003-08-28

    摘要: In a magnetic random access memory for generating an inductive magnetic flux by passing current into write wirings disposed closely to MTJ elements, whose resistance values varying depending on the magnetization array state of two magnetic layers of MTJ elements including two magnetic layers that hold a non-magnetic layer correspond to the stored information of “0”/“1”, and writing information by varying the magnetization direction of a free layer of the MTJ elements, the shape of the MTJ elements is warped so as to coincide substantially with the magnetic field curve generated from the write wirings.

    摘要翻译: 在磁性随机存取存储器中,用于通过将电流传递到靠近MTJ元件布置的写布线中来产生感应磁通量,其电阻值根据包括两个磁性层的MTJ元件的两个磁性层的磁化阵列状态而变化, 磁性层对应于“0”/“1”的存储信息,并且通过改变MTJ元件的自由层的磁化方向来写入信息,MTJ元件的形状被扭曲以与磁场大体一致 从写布线产生的曲线。

    Method for manufacturing thin film magnetic head
    43.
    发明授权
    Method for manufacturing thin film magnetic head 失效
    制造薄膜磁头的方法

    公开(公告)号:US06305072B1

    公开(公告)日:2001-10-23

    申请号:US08979965

    申请日:1997-11-26

    IPC分类号: G11B542

    摘要: When manufacturing a thin film magnetic head in which an upper magnetic pole is formed on a lower magnetic pole through a magnetic gap, firstly, at least on the lower magnetic pole, a convex portion possessing the width equivalent to a track width is formed. The convex portion forms a lower magnetic pole tip. Conforming to a contour of the convex shape of the lower magnetic pole, a non-magnetic material layer is formed. A flattening layer is formed on the non-magnetic material layer. The non-magnetic layer is etched with the flattening layer, for example, as a mask. In the non-magnetic material layer, a concave portion self-aligned to the lower portion magnetic pole top (convex portion) is formed. Inside the concave portion, a magnetic layer (upper magnetic pole tip) destined to be a part of the upper magnetic pole is formed. As to the lower magnetic pole tip and the upper magnetic pole tip, the widths of surfaces opposite to the magnetic gap are almost equal, and the central positions thereof almost overlap each other. Thus, a narrow track head structure with high accuracy can be obtained.

    摘要翻译: 当通过磁隙制造在下磁极上形成上磁极的薄膜磁头时,首先至少在下磁极上形成具有与磁道宽度相等的宽度的凸部。 凸部形成下磁极末端。 符合下磁极的凸形轮廓,形成非磁性材料层。 在非磁性材料层上形成平坦化层。 用平坦化层,例如作为掩模蚀刻非磁性层。 在非磁性材料层中,形成与下部磁极顶部(凸部)自对准的凹部。 在凹部内部形成着作为上磁极的一部分的磁性层(上磁极端)。 对于下磁极尖端和上磁极尖端,与磁隙相反的表面的宽度几乎相等,并且其中心位置几乎彼此重叠。 因此,可以获得高精度的窄轨道头结构。

    Thin-film magnetic head having a portion of the upper magnetic core
coplanar with a portion of the lower magnetic core
    45.
    发明授权
    Thin-film magnetic head having a portion of the upper magnetic core coplanar with a portion of the lower magnetic core 失效
    薄膜磁头具有与下部磁芯的一部分共面的上部磁芯的一部分

    公开(公告)号:US5872693A

    公开(公告)日:1999-02-16

    申请号:US826749

    申请日:1997-03-24

    IPC分类号: G11B5/31

    摘要: A thin-film magnetic head comprising a lower magnetic core formed on a substrate, an upper magnetic core formed on the lower magnetic core with a magnetic gap therebetween, and a coil interposed between the lower magnetic core and the upper magnetic core as insulated from the lower magnetic core and the upper magnetic core, characterized in that at least either of the lower magnetic core and the upper magnetic core comprises a front body of a magnetic pole facing a magnetic recording medium and a rear body of a magnetic pole having part thereof superposed on the front body of the magnetic pole, the rear body of the magnetic pole is disposed as recessed from the head surface facing the medium and held in contact with the front body of the magnetic pole in a plane, the plane is terminated at a rear of the end of the front body of the magnetic pole, and the rear body of the magnetic pole has a shape curved or bent in the direction opposite to the magnetic gap, and further the front body of the magnetic pole is composed of a magnetic member embedded in a trench formed in advance in an insulating layer.

    摘要翻译: 一种薄膜磁头,包括形成在基板上的下磁芯,形成在下磁芯上的上磁芯,其间具有磁隙,以及插入在下磁芯和上磁心之间的线圈, 下磁芯和上磁芯,其特征在于,下磁芯和上磁芯中的至少一个包括面向磁记录介质的磁极的前体和磁极的后体,其部分叠加 在磁极的前体上,磁极的后体被设置为从面向介质的头表面凹陷并且在平面中与磁极的前体保持接触,平面终止在后面 的磁极的前体的端部,并且磁极的后体具有与磁隙相反的方向弯曲或弯曲的形状,并且还具有前体o f磁极由嵌入在预先形成在绝缘层中的沟槽中的磁性构件组成。

    Magnetoresistive effect element and magnetic memory
    50.
    发明授权
    Magnetoresistive effect element and magnetic memory 有权
    磁阻效应元件和磁存储器

    公开(公告)号:US08750029B2

    公开(公告)日:2014-06-10

    申请号:US13233420

    申请日:2011-09-15

    IPC分类号: G11C11/15 H01L43/08

    摘要: According to one embodiment, a magnetoresistive effect element includes a recording layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and a variable orientation of magnetization, a reference layer including ferromagnetic material with perpendicular magnetic anisotropy to a film surface and an invariable orientation of magnetization, a nonmagnetic layer between the recording layer and the reference layer, a first underlayer on a side of the recoding layer opposite to a side on which the nonmagnetic layer is provided, and a second underlayer between the recording layer and the first underlayer. The second underlayer is a Pd film including a concentration of 3×1015 atms/cm2.

    摘要翻译: 根据一个实施例,磁阻效应元件包括记录层,其包括对膜表面具有垂直磁各向异性的铁磁材料和磁化的可变取向,包括具有垂直磁性各向异性的铁磁材料的参考层和膜表面的不变取向 磁化,记录层和参考层之间的非磁性层,与记录层和第一底层之间的第二底层与编码层的与设置非磁性层的一侧相反的一侧的第一底层。 第二底层是包含浓度为3×1015atms / cm 2的Pd膜。