公开(公告)号：US20100229646A1

公开(公告)日：2010-09-16

申请号：US12722707

申请日：2010-03-12

Applicant: Hirofumi HIGUCHI ,  Akitoshi Yamanaka ,  Tetsuo Fujii

Inventor： Hirofumi HIGUCHI ,  Akitoshi Yamanaka ,  Tetsuo Fujii

IPC: G01C19/56

CPC classification number: G01C19/5719

Abstract: An oscillating angular speed sensor includes a detector, a driving portion, and a separating portion. When an angular speed is generated while the detector is driven to oscillate by the driving portion, Coriolis force is applied to the detector. Therefore, the angular speed is detected based on a capacitance variation in accordance with a variation of an interval between a movable electrode and a fixed electrode of the detector. The separating portion is distanced from the detector and the driving portion, and is configured to separate a first space accommodating the detector and a second space accommodating the driving portion.

Abstract translation: 振动角速度传感器包括检测器，驱动部分和分离部分。 当检测器被驱动部分驱动振荡时产生角速度时，将科里奥利力施加到检测器。 因此，根据检测器的可动电极和固定电极之间的间隔的变化，基于电容变化来检测角速度。 分离部分远离检测器和驱动部分，并且被配置为分离容纳检测器的第一空间和容纳驱动部分的第二空间。

公开(公告)号：USRE41213E1

公开(公告)日：2010-04-13

申请号：US10315859

申请日：2002-12-10

Applicant: Tetsuo Fujii

Inventor： Tetsuo Fujii

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01P15/0802 ,  G01P2015/0817

Abstract: A single crystal silicon substrate (1) is bonded through an SiO2 film (9) to a single crystal silicon substrate (8), and the single crystal silicon substrate (1) is made into a thin film. A cantilever (13) is formed on the single crystal silicon substrate (1), and the thickness of the cantilever (13) in a direction parallel to the surface of the single crystal silicon substrate (1) is made smaller than the thickness of the cantilever in the direction of the depth of the single crystal silicon substrate (1), and movable in a direction parallel to the substrate surface. In addition, the surface of the cantilever (13) and the part of the single crystal silicon substrate (1), opposing the cantilever (13), are, respectively, coated with an SiO2 film (5), so that an electrode short circuit is prevented in a capacity-type sensor. In addition, a signal-processing circuit (10) is formed on the single crystal silicon substrate (1), so that signal processing is performed as the cantilever (13) moves.

Abstract translation: 单晶硅基板（1）通过SiO 2膜（9）与单晶硅基板（8）接合，将单晶硅基板（1）制成薄膜。 在单晶硅衬底（1）上形成悬臂（13），并且使悬臂（13）的平行于单晶硅衬底（1）的表面的方向的厚度小于单晶硅衬底 在单晶硅衬底（1）的深度方向上的悬臂，并且可以在平行于衬底表面的方向上移动。 此外，悬臂（13）的表面和单晶硅衬底（1）的与悬臂（13）相对的部分分别涂覆有SiO 2膜（5），使得电极短路 在容量型传感器中被阻止。 此外，在单晶硅衬底（1）上形成信号处理电路（10），从而当悬臂（13）移动时进行信号处理。

公开(公告)号：US07662668B2

公开(公告)日：2010-02-16

申请号：US11591496

申请日：2006-11-02

Applicant: Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

Inventor： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

IPC: H01L21/00

CPC classification number: H01L21/78 ,  B23K26/16 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/3025

Abstract: A separating device for separating a semiconductor substrate includes: a cutting element for cutting the semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate; an adsorbing element for adsorbing a dust on a surface of the semiconductor substrate by using electrostatic force; and a static electricity generating element for generating static electricity and for controlling the static electricity in order to remove the dust from the adsorbing element.

Abstract translation: 用于分离半导体衬底的分离装置包括：用于将半导体衬底与半导体衬底上的切割线一起切割成多个芯片的切割元件; 用于通过使用静电力吸附在所述半导体衬底的表面上的灰尘的吸附元件; 以及用于产生静电并用于控制静电以便从吸附元件去除灰尘的静电发生元件。

公开(公告)号：US07540199B2

公开(公告)日：2009-06-02

申请号：US11808774

申请日：2007-06-12

Applicant: Tetsuo Fujii ,  Eishi Kawasaki

Inventor： Tetsuo Fujii ,  Eishi Kawasaki

IPC: G01R27/26

CPC classification number: G01L9/0042 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C2203/0118 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A physical quantity sensor for detecting a physical quantity includes: a first substrate having a first physical quantity detection element; a second substrate having a second physical quantity detection element, wherein the second substrate contacts the first substrate; and an accommodation space disposed between the first substrate and the second substrate. The first physical quantity detection element is disposed in the accommodation space. The first physical quantity detection element is protected with the first substrate and the second substrate since the first physical quantity detection element is sealed in the accommodation space.

Abstract translation: 用于检测物理量的物理量传感器包括：具有第一物理量检测元件的第一基板; 具有第二物理量检测元件的第二基板，其中所述第二基板接触所述第一基板; 以及设置在第一基板和第二基板之间的容纳空间。 第一物理量检测元件设置在容纳空间中。 第一物理量检测元件被第一基板和第二基板保护，因为第一物理量检测元件被密封在容纳空间中。

公开(公告)号：US20090008728A1

公开(公告)日：2009-01-08

申请号：US12213711

申请日：2008-06-24

Applicant: Tetsuo Fujii ,  Kazuhiko Sugiura

Inventor： Tetsuo Fujii ,  Kazuhiko Sugiura

IPC: H01L29/84 ,  H01L21/58

CPC classification number: B81B7/007 ,  B81B2207/07 ,  B81B2207/097 ,  B81C2203/0118 ,  G01P15/0802 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/16145 ,  H01L2924/00014

Abstract: A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.

Abstract translation: 半导体器件包括：传感器元件，其具有表面的板形，并且包括设置在传感器元件的表面部分中的传感器结构; 以及结合到传感器元件的表面的板状盖元件。 盖元件具有面向传感器元件的布线图案部分。 布线图形部分连接传感器元件的表面的外周和传感器结构，使得传感器结构经由外周与外部元件电耦合。 传感器元件不具有复杂的多层结构，因此传感器元件被简化。 此外，装置的尺寸减小。

公开(公告)号：US07466000B2

公开(公告)日：2008-12-16

申请号：US11268524

申请日：2005-11-08

Applicant: Tetsuo Fujii

Inventor： Tetsuo Fujii

IPC: G01P15/125

CPC classification number: B81B7/0058 ,  B81B2207/012 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a first substrate including first, second and third layers; a second substrate; and a loop bump. The first and second substrates provides an electric device and physical quantity sensor. The first layer is a shield for protecting the electric device and physical quantity sensor. The physical quantity sensor includes a movable portion surrounded by a first loop layer of the third layer. The loop bump is disposed between the first and second substrates and surrounds the movable portion, and is electrically coupled with the first loop layer so that the loop bump, first loop layer, first layer and second substrate shield the electric device and physical quantity sensor. The first substrate includes inner and outer pads which are electrically coupled through a wire layer which is electrically insulated from the loop bump, so that a signal from the movable portion is output to and external circuit.

Abstract translation: 半导体器件包括：第一衬底，包括第一层，第二层和第三层; 第二基板; 和一个环形凸起。 第一和第二基板提供电气装置和物理量传感器。 第一层是用于保护电气设备和物理量传感器的屏蔽。 物理量传感器包括由第三层的第一环层包围的可动部分。 环形突起设置在第一和第二基板之间并且围绕可动部分，并且与第一环路层电耦合，使得环形凸起，第一环路层，第一层和第二基板屏蔽电气设备和物理量传感器。 第一衬底包括通过与环形凸起电绝缘的导线层电耦合的内部和外部焊盘，使得来自可移动部分的信号被输出到外部电路。

公开(公告)号：USRE40347E1

公开(公告)日：2008-06-03

申请号：US10123220

申请日：2002-04-17

Applicant: Tetsuo Fujii

Inventor： Tetsuo Fujii

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01P15/0802 ,  G01P2015/0817

Abstract: A single crystal silicon substrate (1) is bonded through an SiO2 film (9) to a single crystal silicon substrate (8), and the single crystal silicon substrate (1) is made into a thin film. A cantilever (13) is formed on the single crystal silicon substrate (1), and the thickness of the cantilever (13) in a direction parallel to the surface of the single crystal silicon substrate (1) is made smaller than the thickness of the cantilever in the direction of the depth of the single crystal silicon substrate (1), and movable in a direction parallel to the substrate surface. In addition, the surface of the cantilever (13) and the part of the single crystal silicon substrate (1), opposing the cantilever (13), are respectively, coated with an SiO2 film (5), so that an electrode short circuit is prevented in a capacity-type sensor. In addition, a signal-processing circuit (10) is formed on the single crystal silicon substrate (1), so that signal processing is performed as the cantilever (13) moves.

Abstract translation: 单晶硅衬底（1）通过SiO 2膜（9）结合到单晶硅衬底（8），并且将单晶硅衬底（1）制成薄膜 。 在单晶硅衬底（1）上形成悬臂（13），并且使悬臂（13）的平行于单晶硅衬底（1）的表面的方向的厚度小于单晶硅衬底 在单晶硅衬底（1）的深度方向上的悬臂，并且可以在平行于衬底表面的方向上移动。 此外，悬臂（13）的表面和与悬臂（13）相对的单晶硅衬底（1）的一部分分别涂覆有SiO 2膜（5） ，从而在容量型传感器中防止电极短路。 此外，在单晶硅衬底（1）上形成信号处理电路（10），从而当悬臂（13）移动时进行信号处理。

公开(公告)号：US20080012050A1

公开(公告)日：2008-01-17

申请号：US11826206

申请日：2007-07-12

Applicant: Takaaki Aoki ,  Tetsuo Fujii ,  Tomofusa Shiga

Inventor： Takaaki Aoki ,  Tetsuo Fujii ,  Tomofusa Shiga

IPC: H01L29/80 ,  H01L29/76

CPC classification number: H01L29/7813 ,  H01L29/0696 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7806 ,  H01L29/7811 ,  H01L29/7828 ,  H01L29/8083

Abstract: A semiconductor device includes: a semiconductor substrate; a vertical type trench gate MOS transistor; a Schottky barrier diode; multiple trenches having a stripe pattern to divide an inner region into first and second separation regions; and a poly silicon film in each trench. The first separation region includes a first conductive type region for providing a source and a second conductive type layer for providing a channel region. The first conductive type region is adjacent to a first trench. The poly silicon film in the first trench is coupled with a gate wiring. A second trench is not adjacent to the first conductive type region. The poly silicon film in the second trench is coupled with a source or gate wiring. The substrate in the second separation region is coupled with the source wiring for providing a Schottky barrier.

Abstract translation: 半导体器件包括：半导体衬底; 垂直型沟槽栅极MOS晶体管; 肖特基势垒二极管; 多个沟槽具有条纹图案以将内部区域分成第一和第二分离区域; 和每个沟槽中的多晶硅膜。 第一分离区域包括用于提供源极的第一导电类型区域和用于提供沟道区域的第二导电类型层。 第一导电类型区域与第一沟槽相邻。 第一沟槽中的多晶硅膜与栅极布线耦合。 第二沟槽不与第一导电类型区域相邻。 第二沟槽中的多晶硅膜与源极或栅极布线耦合。 第二分离区域中的衬底与用于提供肖特基势垒的源极配线耦合。

公开(公告)号：US20070202619A1

公开(公告)日：2007-08-30

申请号：US11598653

申请日：2006-11-14

Applicant: Muneo Tamura ,  Tetsuo Fujii

Inventor： Muneo Tamura ,  Tetsuo Fujii

IPC: H01L21/00

CPC classification number: B23K26/0608 ,  B23K26/0617 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  B28D5/00

Abstract: A laser processing apparatus has one laser light source that simultaneously radiates laser beams with two wavelengths. Depth positions of focusing points for laser beams are gradually changed in a wafer. Three sets of modifying region groups, i.e., six layers of modifying region groups, are successively formed. One set of modifying region groups constitutes two layers and is formed at a time. The modifying region groups are separated, adjoined, or overlapped with each other along an estimated cut line of the wafer in a depth direction from a surface thereof.

Abstract translation: 激光加工装置具有同时辐射具有两个波长的激光束的一个激光光源。 激光束聚焦点的深度位置在晶片中逐渐变化。 连续形成3组修饰区域基团，即六层修饰区域基团。 一组修改区域组构成两层，一次形成。 修改区域组沿着晶片的从其表面的深度方向的估计切割线彼此分离，邻接或重叠。

公开(公告)号：US20070158822A1

公开(公告)日：2007-07-12

申请号：US11709271

申请日：2007-02-22

Applicant: Tetsuo Fujii

Inventor： Tetsuo Fujii

IPC: H01L23/12

CPC classification number: G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/0828 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A dynamic quantity sensor includes a sensor chip (10) having a movable portion (13) at one surface side thereof and a silicon layer (14) at another surface side thereof. The movable portion (13) is displaced under application of a dynamic quantity. The silicon layer (14) is separated from the movable portion (13) through an insulator (15). The dynamic quantity sensor also includes a circuit chip (20) for transmitting/receiving electrical signals to/from the sensor chip (20). The circuit chip (20) is disposed to confront the one surface of the sensor chip (10) through a gap portion (30) and cover the movable portion (13). The sensor chip (10) and the circuit chip (20) are bonded to each other around the gap portion (30) so that a bonding portion (40) is formed to substantially surround the gap portion (30) and thereby seal the gap portion (30).

Abstract translation: 动态量传感器包括在其一个表面侧具有可移动部分（13）的传感器芯片（10）和在其另一表面侧的硅层（14）。 可移动部分（13）在施加动态量的情况下移动。 硅层（14）通过绝缘体（15）与可动部分（13）分离。 动态量传感器还包括用于向传感器芯片（20）发送/接收电信号的电路芯片（20）。 电路芯片（20）设置成通过间隙部分（30）与传感器芯片（10）的一个表面相对并覆盖可动部分（13）。 传感器芯片（10）和电路芯片（20）围绕间隙部分（30）彼此接合，使得接合部分（40）形成为基本上围绕间隙部分（30），从而将间隙部分 （30）。