公开(公告)号：US20080265299A1

公开(公告)日：2008-10-30

申请号：US12167828

申请日：2008-07-03

申请人： Mayank Bulsara ,  Matthew T. Currie ,  Anthony J. Lochtefeld

发明人： Mayank Bulsara ,  Matthew T. Currie ,  Anthony J. Lochtefeld

IPC分类号： H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/10829 ,  H01L27/1087 ,  H01L27/10894 ,  H01L27/10897 ,  H01L28/40 ,  H01L29/1054 ,  H01L29/7849 ,  H01L29/945

摘要： DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.

摘要翻译： 尤其是通过将导电材料沉积到沟槽中或掺杂限定沟槽的半导体区域形成的DRAM沟槽电容器。

公开(公告)号：US07416909B2

公开(公告)日：2008-08-26

申请号：US11702825

申请日：2007-02-06

申请人： Matthew T. Currie ,  Anthony J. Lochtefeld

发明人： Matthew T. Currie ,  Anthony J. Lochtefeld

IPC分类号： H01L21/00 ,  H01L21/338

CPC分类号： H01L21/02532 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/02664 ,  H01L21/2652 ,  H01L21/823807 ,  H01L29/1054

摘要： Oxidation methods, which avoid consuming undesirably large amounts of surface material in Si/SiGe heterostructure-based wafers, replace various intermediate CMOS thermal oxidation steps. First, by using oxide deposition methods, arbitrarily thick oxides may be formed with little or no consumption of surface silicon. These oxides, such as screening oxide and pad oxide, are formed by deposition onto, rather than reaction with and consumption of the surface layer. Alternatively, oxide deposition is preceded by a thermal oxidation step of short duration, e.g., rapid thermal oxidation. Here, the short thermal oxidation consumes little surface Si, and the Si/oxide interface is of high quality. The oxide may then be thickened to a desired final thickness by deposition. Furthermore, the thin thermal oxide may act as a barrier layer to prevent contamination associated with subsequent oxide deposition.

摘要翻译： 避免在Si / SiGe异质结构基晶片中消耗不希望的大量表面材料的氧化方法代替了各种中间CMOS热氧化步骤。 首先，通过使用氧化物沉积方法，可以形成少量或不消耗表面硅的任意厚的氧化物。 这些氧化物，例如筛选氧化物和氧化垫，通过沉积到表面层上而不是与表面层反应并消耗而形成。 或者，氧化物沉积之前是短时间的热氧化步骤，例如快速热氧化。 这里，短的热氧化消耗很少的表面Si，并且Si /氧化物界面是高质量的。 然后可以通过沉积将氧化物增稠至所需的最终厚度。 此外，薄的热氧化物可以用作阻挡层，以防止与随后的氧化物沉积相关的污染。

公开(公告)号：US07208332B2

公开(公告)日：2007-04-24

申请号：US11132856

申请日：2005-05-19

申请人： Matthew T. Currie ,  Anthony J. Lochtefeld

发明人： Matthew T. Currie ,  Anthony J. Lochtefeld

IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/46 ,  H01L21/78 ,  H01L21/301

CPC分类号： H01L21/02532 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/02664 ,  H01L21/2652 ,  H01L21/823807 ,  H01L29/1054

摘要： Oxidation methods, which avoid consuming undesirably large amounts of surface material in Si/SiGe heterostructure-based wafers, replace various intermediate CMOS thermal oxidation steps. First, by using oxide deposition methods, arbitrarily thick oxides may be formed with little or no consumption of surface silicon. These oxides, such as screening oxide and pad oxide, are formed by deposition onto, rather than reaction with and consumption of the surface layer. Alternatively, oxide deposition is preceded by a thermal oxidation step of short duration, e.g., rapid thermal oxidation. Here, the short thermal oxidation consumes little surface Si, and the Si/oxide interface is of high quality. The oxide may then be thickened to a desired final thickness by deposition. Furthermore, the thin thermal oxide may act as a barrier layer to prevent contamination associated with subsequent oxide deposition.

公开(公告)号：US07071014B2

公开(公告)日：2006-07-04

申请号：US10696994

申请日：2003-10-30

申请人： Matthew T. Currie ,  Anthony J. Lochtefeld

发明人： Matthew T. Currie ,  Anthony J. Lochtefeld

IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/46

CPC分类号： H01L21/02532 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02521 ,  H01L21/02538 ,  H01L21/02664 ,  H01L21/2652 ,  H01L21/823807 ,  H01L29/1054

摘要： Oxidation methods, which avoid consuming undesirably large amounts of surface material in Si/SiGe heterostructure-based wafers, replace various intermediate CMOS thermal oxidation steps. First, by using oxide deposition methods, arbitrarily thick oxides may be formed with little or no consumption of surface silicon. These oxides, such as screening oxide and pad oxide, are formed by deposition onto, rather than reaction with and consumption of the surface layer. Alternatively, oxide deposition is preceded by a thermal oxidation step of short duration, e.g., rapid thermal oxidation. Here, the short thermal oxidation consumes little surface Si, and the Si/oxide interface is of high quality. The oxide may then be thickened to a desired final thickness by deposition. Furthermore, the thin thermal oxide may act as a barrier layer to prevent contamination associated with subsequent oxide deposition.

公开(公告)号：US06960781B2

公开(公告)日：2005-11-01

申请号：US10794010

申请日：2004-03-05

申请人： Matthew T. Currie ,  Anthony J. Lochtefeld

发明人： Matthew T. Currie ,  Anthony J. Lochtefeld

IPC分类号： H01L20060101 ,  H01L21/00 ,  H01L21/26 ,  H01L21/336 ,  H01L21/42 ,  H01L21/76 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/00 ,  H01L29/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/772 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/66628 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823807 ,  H01L21/823878 ,  H01L29/1054 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7842 ,  H01L29/785

摘要： A structure including a transistor and a trench structure, with the trench structure inducing only a portion of the strain in a channel region of the transistor.

摘要翻译： 包括晶体管和沟槽结构的结构，沟槽结构仅在晶体管的沟道区域中仅引起应变的一部分。

公开(公告)号：US08187379B2

公开(公告)日：2012-05-29

申请号：US13074777

申请日：2011-03-29

申请人： Eugene Fitzgerald ,  Richard Westhoff ,  Matthew T. Currie ,  Christopher J. Vineis ,  Thomas A. Langdo

发明人： Eugene Fitzgerald ,  Richard Westhoff ,  Matthew T. Currie ,  Christopher J. Vineis ,  Thomas A. Langdo

IPC分类号： C30B21/02

CPC分类号： C30B29/52 ,  C23C16/029 ,  C23C16/22 ,  C23C16/4401 ,  C30B25/02 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.

摘要翻译： 在半导体材料上沉积梯度Si1-xGex层期间最小化颗粒产生的方法包括在包括Si前体和Ge前体的气氛中提供衬底，其中Ge前体的分解温度大于锗烷，并沉积 分级的Si1-xGex层，其具有大于约0.15的最终Ge含量和小于约0.3颗粒/ cm 2的颗粒密度。

公开(公告)号：US07955435B2

公开(公告)日：2011-06-07

申请号：US12711560

申请日：2010-02-24

申请人： Eugene Fitzgerald ,  Richard Westhoff ,  Matthew T. Currie ,  Christopher J. Vineis ,  Thomas A. Langdo

发明人： Eugene Fitzgerald ,  Richard Westhoff ,  Matthew T. Currie ,  Christopher J. Vineis ,  Thomas A. Langdo

IPC分类号： C30B21/04

CPC分类号： C30B29/52 ,  C23C16/029 ,  C23C16/22 ,  C23C16/4401 ,  C30B25/02 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for minimizing particle generation during deposition of a graded Si.sub.1-xGe.sub.x layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si.sub.1-xGe.sub.x layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm.sup.2 on the substrate.

摘要翻译： 在半导体材料上沉积梯度Si 1-x Ge x层的过程中使颗粒产生最小化的方法包括在包括Si前体和Ge前体的气氛中提供衬底，其中Ge前体具有分解 温度大于锗烷，并沉积具有大于约0.15的最终Ge含量并且小于约0.3颗粒/ cm 2的颗粒密度的梯度Si 1-x Ge 2层在衬底上 。

公开(公告)号：US08441055B2

公开(公告)日：2013-05-14

申请号：US13568894

申请日：2012-08-07

申请人： Mayank T. Bulsara ,  Matthew T. Currie ,  Anthony J. Lochtefeld

发明人： Mayank T. Bulsara ,  Matthew T. Currie ,  Anthony J. Lochtefeld

IPC分类号： H01L27/108

CPC分类号： H01L27/10829 ,  H01L27/1087 ,  H01L27/10894 ,  H01L27/10897 ,  H01L28/40 ,  H01L29/1054 ,  H01L29/7849 ,  H01L29/945

摘要： DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.

摘要翻译： 尤其通过将导电材料沉积到沟槽中或掺杂限定沟槽的半导体区域而形成的DRAM沟槽电容器。

公开(公告)号：US20120302032A1

公开(公告)日：2012-11-29

申请号：US13568894

申请日：2012-08-07

申请人： Mayank Bulsara ,  Matthew T. Currie ,  Anthony J. Lochtefeld

发明人： Mayank Bulsara ,  Matthew T. Currie ,  Anthony J. Lochtefeld

IPC分类号： H01L21/02

CPC分类号： H01L27/10829 ,  H01L27/1087 ,  H01L27/10894 ,  H01L27/10897 ,  H01L28/40 ,  H01L29/1054 ,  H01L29/7849 ,  H01L29/945

摘要： DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.

摘要翻译： DRAM槽电容器尤其通过将导电材料沉积到沟槽中或掺杂限定沟槽的半导体区域而形成。

公开(公告)号：US07626246B2

公开(公告)日：2009-12-01

申请号：US11493365

申请日：2006-07-26

申请人： Anthony J. Lochtefeld ,  Matthew T. Currie ,  Zhi-Yuan Cheng ,  James Fiorenza

发明人： Anthony J. Lochtefeld ,  Matthew T. Currie ,  Zhi-Yuan Cheng ,  James Fiorenza

IPC分类号： H01L23/58

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L21/823842 ,  H01L21/8258 ,  H01L27/0605 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7848 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming areas of alternative material on crystalline semiconductor substrates, and structures formed thereby. Such areas of alternative material are suitable for use as active areas in MOSFETs or other electronic or opto-electronic devices.

摘要翻译： 在晶体半导体衬底上形成替代材料的区域的方法，以及由此形成的结构。 这种替代材料的领域适合用作MOSFET或其他电子或光电子器件中的有源区域。