公开(公告)号：US20100073138A1

公开(公告)日：2010-03-25

申请号：US12586340

申请日：2009-09-21

申请人： Mikitoshi Suzuki ,  Masahiro Sugimoto ,  Kenichi Nakamura

发明人： Mikitoshi Suzuki ,  Masahiro Sugimoto ,  Kenichi Nakamura

IPC分类号： H04Q5/22

CPC分类号： G06K7/0008 ,  G06K7/10297

摘要： This disclosure discloses an RFID tag communication apparatus capable of communicating with a plurality of RFID circuit elements, each of the RFID circuit elements having a tag antenna that transmits and receives information and an IC circuit part that stores information, comprising: a communication antenna that forms a communication range that includes said RFID circuit elements and performs wireless communication; at least one information acquisition device that attempts to acquire tag identification information from said RFID circuit elements positioned within said communication range by selectively using a plurality of communication protocols different from each other; and a storage processing device that performs predetermined storage processing with respect to a plurality of tag identification information with associating with each communication protocol, said plurality of tag identification information being acquired by said at least one information acquisition device with using said plurality of communication protocols different from each other.

摘要翻译： 本公开公开了一种能够与多个RFID电路元件通信的RFID标签通信装置，每个RFID电路元件具有发送和接收信息的标签天线和存储信息的IC电路部分，包括：形成 包括所述RFID电路元件并执行无线通信的通信范围; 至少一个信息获取装置，通过选择性地使用彼此不同的多个通信协议，尝试从位于所述通信范围内的所述RFID电路元件获取标签识别信息; 以及存储处理装置，其针对与各通信协议相关联的多个标签识别信息执行预定的存储处理，所述多个标签识别信息由所述至少一个信息获取装置利用所述多个通信协议采用不同的方式获取 从彼此。

公开(公告)号：US20070256935A1

公开(公告)日：2007-11-08

申请号：US11660676

申请日：2005-08-24

申请人： Masahiro Sugimoto ,  Tomoyoshi Soga ,  Masaru Tomita

发明人： Masahiro Sugimoto ,  Tomoyoshi Soga ,  Masaru Tomita

IPC分类号： B01D57/02

CPC分类号： G01N27/447

摘要： When the migration time of a low molecular weight compound having an unknown migration time in microchip electrophoresis, capillary electrophoresis, or a capillary electrophoresis mass spectrometer is predicted, first, with respect to a substance having a known electrophoretic migration time, characteristic quantities (descriptors) thereof which can be numerically expressed from a structure thereof are computed to predict the relation between the characteristic quantities (descriptors) and the migration time; the migration times of some substances are measured by electrophoresis or an electrophoresis mass spectrometer to learn about the relation; and using the learnt result, the migration time of the substance having an unknown migration time in the electrophoresis or electrophoresis mass spectrometer is predicted from the structure thereof.

摘要翻译： 当预测在微芯片电泳，毛细管电泳或毛细管电泳质谱仪中具有未知迁移时间的低分子量化合物的迁移时间时，首先，关于具有已知电泳迁移时间的物质，特征量（描述符） 计算其数值表示的结构，以预测特征量（描述符）与迁移时间之间的关系; 通过电泳或电泳质谱仪测量某些物质的迁移时间，以了解关系; 并且使用所获得的结果，从其结构可以预测在电泳或电泳质谱仪中具有未知迁移时间的物质的迁移时间。

公开(公告)号：US5017483A

公开(公告)日：1991-05-21

申请号：US13797

申请日：1987-02-12

申请人： Satoru Furukawa ,  Akio Ozaki ,  Toshihide Nakanishi ,  Yukinobu Kotani ,  Masahiro Sugimoto

发明人： Satoru Furukawa ,  Akio Ozaki ,  Toshihide Nakanishi ,  Yukinobu Kotani ,  Masahiro Sugimoto

IPC分类号： C12P13/08

CPC分类号： C12R1/19 ,  C12P13/08 ,  Y10S435/849

摘要： A process is disclosed for producing L-threonine, the process involves culturing in a medium a microorganism of the genus Escherichia capable of producing L-threonine which has resistance to at least one of rifampicin, lysine, methionine, aspartic acid and homoserine, or a decreased ability to degrade L-threonine, accumulating L-threonine in the culture liquor and recovering L-threonine therefrom.

摘要翻译： 本发明公开了用于生产L-苏氨酸的方法，该方法包括在培养基中培养能产生对赖福普胺，赖氨酸，甲硫氨酸，天冬氨酸和高丝氨酸中的至少一种具有抗性的L-苏氨酸的微生物，或 降低L-苏氨酸的降解能力，在培养液中积累L-苏氨酸并从其中回收L-苏氨酸。

公开(公告)号：US4980239A

公开(公告)日：1990-12-25

申请号：US235595

申请日：1988-08-24

申请人： Shigeki Harada ,  Masahiro Sugimoto

发明人： Shigeki Harada ,  Masahiro Sugimoto

IPC分类号： C23C14/06 ,  C04B41/51 ,  C04B41/52 ,  C04B41/89 ,  C23C14/14 ,  C23C14/18 ,  C23C14/58 ,  H01L23/10 ,  H05K1/03 ,  H05K3/38

CPC分类号： C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  H01L2224/32225 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/73265 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/207 ,  H05K1/0306 ,  H05K3/38 ,  Y10T428/12056 ,  Y10T428/12576 ,  Y10T428/31536

摘要： A metallization layer structure includes an intermediate layer formed on an aluminum nitride ceramics base. The intermediate layer contains aluminum titanium nitride. A titanium layer is formed on the intermediate layer. A heat-resistant metallic layer is formed on the titanium layer. A metallic layer for facilitating soldering or brazing is formed on the heat-resistant metallic layer.

公开(公告)号：US09379181B2

公开(公告)日：2016-06-28

申请号：US14258251

申请日：2014-04-22

申请人： Masahiro Sugimoto

发明人： Masahiro Sugimoto

IPC分类号： H01L29/66 ,  H01L29/76 ,  H01L27/16 ,  H01L29/94 ,  H01L27/06 ,  H01L29/06 ,  H01L29/78 ,  H01L29/32 ,  H01L29/40 ,  H01L29/423 ,  H01L29/739 ,  H01L29/16

CPC分类号： H01L29/0653 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/32 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7804

摘要： A semiconductor device is provided with a semiconductor substrate in which a power semiconductor element part and a temperature sensing diode part are provided. The temperature sensing diode part includes a first semiconductor region, a second semiconductor region, a first base region, and a first drift region. In the semiconductor substrate, an isolation trench is formed, which passes through the first base region, extends to the first drift region, and surrounds an outer periphery of the temperature sensing diode part. At least a part of one of side walls of the isolation trench is in contact with the power semiconductor element part, and the other side wall of the isolation trench is in contact with the temperature sensing diode part.

摘要翻译： 半导体器件设置有半导体衬底，其中提供功率半导体元件部分和温度感测二极管部分。 温度感测二极管部分包括第一半导体区域，第二半导体区域，第一基极区域和第一漂移区域。 在半导体衬底中，形成隔离沟槽，其通过第一基极区域延伸到第一漂移区域并且包围温度感测二极管部件的外周。 隔离沟槽的一个侧壁的至少一部分与功率半导体元件部分接触，并且隔离沟槽的另一个侧壁与温度感测二极管部分接触。

公开(公告)号：US09242470B2

公开(公告)日：2016-01-26

申请号：US12946733

申请日：2010-11-15

申请人： Seiji Suzuki ,  Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Masahiro Sugimoto ,  Susumu Hirosawa ,  Takeaki Nakano

发明人： Seiji Suzuki ,  Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Masahiro Sugimoto ,  Susumu Hirosawa ,  Takeaki Nakano

IPC分类号： B41J2/165

CPC分类号： B41J2/16532 ,  B41J2/16541 ,  B41J2/16544 ,  B41J2/16547 ,  B41J2/16585

摘要： An apparatus includes a recording head arranged so as to oppose a sheet moving in a first direction, in which a plurality of first nozzle chips and a plurality of second nozzle chips each having a nozzle array are arranged as different arrays in a second direction crossing the first direction, and in which the first nozzle chips and the second nozzle chips adjacent to each other are shifted from each other in the second direction, a first suction unit opposed to the first nozzle chips and configured to suction ink from a part of the nozzle arrays included in the first nozzle chips, a second suction unit opposed to the second nozzle chips and configured to suction ink from a part of the nozzle arrays included in the second nozzle chips, a suction holder configured to retain the first suction unit and the second suction unit, and a movement mechanism configured to cause relative movement between the recording head and the suction holder in the second direction, wherein the first suction unit and the second suction unit are shifted from each other in the second direction in correspondence with the shift between the first nozzle chips and the second nozzle chips.

摘要翻译： 一种设备包括：记录头，其布置成与沿第一方向移动的片材相对，其中多个第一喷嘴芯片和多个具有喷嘴阵列的第二喷嘴芯片沿与第二方向交叉的第二方向排列成不同的阵列 第一方向，并且其中彼此相邻的第一喷嘴芯片和第二喷嘴芯片沿第二方向彼此偏移;第一抽吸单元，与第一喷嘴芯片相对并且构造成从喷嘴的一部分吸取墨水 包括在第一喷嘴芯片中的阵列，与第二喷嘴芯片相对并且被配置为从包括在第二喷嘴芯片中的喷嘴阵列的一部分吸入墨水的第二抽吸单元，构造成保持第一抽吸单元和第二抽吸单元 抽吸单元和移动机构，其构造成在第二方向上在记录头和吸持保持器之间产生相对运动，其中第一抽吸 单元和第二抽吸单元相对于第一喷嘴芯片和第二喷嘴芯片之间的移动在第二方向上彼此偏移。

公开(公告)号：US09105795B2

公开(公告)日：2015-08-11

申请号：US12160964

申请日：2008-07-15

申请人： Toshiyuki Mito ,  Kazuya Takahata ,  Toshiya Okada ,  Toshio Ushiyama ,  Masahiro Sugimoto ,  Hirokazu Tsubouchi

发明人： Toshiyuki Mito ,  Kazuya Takahata ,  Toshiya Okada ,  Toshio Ushiyama ,  Masahiro Sugimoto ,  Hirokazu Tsubouchi

IPC分类号： H01F6/00 ,  H01L39/00 ,  H01L39/14 ,  H01F6/06 ,  H01L39/24

CPC分类号： H01L39/14 ,  H01F6/06 ,  H01L39/2403 ,  H01L39/2409 ,  Y10T428/31678

摘要： Disclosed is a composite superconductor comprising a superconductor and a metal member. The metal member is composed of one or more members to be joined together in such manner that the one or more members cover the superconductor, and at least one member is made of aluminum or an aluminum alloy.

摘要翻译： 公开了一种包括超导体和金属构件的复合超导体。 金属构件由一个或多个构件组成，以使得一个或多个构件覆盖超导体的方式接合在一起，并且至少一个构件由铝或铝合金制成。

公开(公告)号：US08975139B2

公开(公告)日：2015-03-10

申请号：US14000901

申请日：2012-09-04

申请人： Shinichiro Miyahara ,  Toshimasa Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Shinichiro Miyahara ,  Toshimasa Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L21/3065 ,  H01L29/34 ,  H01L29/423 ,  H01L29/16

CPC分类号： H01L29/66666 ,  H01L21/3065 ,  H01L29/1608 ,  H01L29/34 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7813

摘要： A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate the base layer and to reach the drift layer; forming a gate electrode on a gate insulation film in the trench; forming a source electrode electrically connected to the source region and the base layer; and forming a drain electrode on a back surface of the substrate. The forming of the trench includes: flattening a substrate surface; and etching to form the trench after flattening.

摘要翻译： 碳化硅半导体器件的制造方法包括：在碳化硅衬底上形成漂移层; 在漂移层的表面部分上或其中形成基底层; 在所述基底层的表面部分中形成源区; 形成沟槽以穿透基层并到达漂移层; 在沟槽中的栅极绝缘膜上形成栅电极; 形成与源极区域和基极层电连接的源电极; 以及在所述基板的背面上形成漏电极。 沟槽的形成包括：使基底表面变平; 并进行蚀刻以在平坦化之后形成沟槽。

公开(公告)号：US20140274726A1

公开(公告)日：2014-09-18

申请号：US14343020

申请日：2012-09-04

申请人： Masahiro Sugimoto ,  Hirokazu Tsubouchi ,  Hitoshi Shimizu ,  Toshiya Okada ,  Toshirou Sakai ,  Kazuya Takahata ,  Hitoshi Tamura ,  Toshiyuki Mito

发明人： Masahiro Sugimoto ,  Hirokazu Tsubouchi ,  Hitoshi Shimizu ,  Toshiya Okada ,  Toshirou Sakai ,  Kazuya Takahata ,  Hitoshi Tamura ,  Toshiyuki Mito

IPC分类号： H01B12/10 ,  H01B13/00

CPC分类号： H01B12/10 ,  H01B13/00 ,  H01L39/14 ,  H01L39/2403 ,  H01L39/2409 ,  Y10T29/49014

摘要： A method for producing a composite superconductor includes: a structure forming process of forming a structure including a metal covering member (20) including at least one to-be-joined portion, a superconductor (30) arranged inside the metal covering member, and a reinforcing member (40) arranged between the superconductor (30) and the at least one to-be-joined portion; and a joining process of joining thereafter the at least one to-be-joined portion.

摘要翻译： 复合超导体的制造方法包括：形成包括包括至少一个待接合部的金属覆盖部件（20）的结构的结构形成工序，配置在金属覆盖部件内的超导体（30），以及 配置在超导体（30）与至少一个被接合部之间的加强部件（40） 以及其后连接至少一个待接合部分的接合过程。

公开(公告)号：US08618555B2

公开(公告)日：2013-12-31

申请号：US13117575

申请日：2011-05-27

申请人： Naohiro Suzuki ,  Hideo Matsuki ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Tsuyoshi Ishikawa ,  Narumasa Soejima ,  Yukihiko Watanabe

发明人： Naohiro Suzuki ,  Hideo Matsuki ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Tsuyoshi Ishikawa ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/66

CPC分类号： H01L29/7813 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068

摘要： The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench.

摘要翻译： 碳化硅半导体器件包括衬底，漂移层，基极区域，源极区域，沟槽，栅极绝缘层，栅极电极，源极电极，漏极电极和深层。 深层设置在基底区域下方并且位于比沟槽更深的深度。 深层在与沟槽的纵向方向交叉的方向上分成多个部分。 这些部分包括设置在与沟槽相对应的位置处的一组部分，其在沟槽的纵向方向上以相等的间隔布置。 该组部分围绕沟槽的底部的角落。