公开(公告)号：US20070256935A1

公开(公告)日：2007-11-08

申请号：US11660676

申请日：2005-08-24

申请人： Masahiro Sugimoto ,  Tomoyoshi Soga ,  Masaru Tomita

发明人： Masahiro Sugimoto ,  Tomoyoshi Soga ,  Masaru Tomita

IPC分类号： B01D57/02

CPC分类号： G01N27/447

摘要： When the migration time of a low molecular weight compound having an unknown migration time in microchip electrophoresis, capillary electrophoresis, or a capillary electrophoresis mass spectrometer is predicted, first, with respect to a substance having a known electrophoretic migration time, characteristic quantities (descriptors) thereof which can be numerically expressed from a structure thereof are computed to predict the relation between the characteristic quantities (descriptors) and the migration time; the migration times of some substances are measured by electrophoresis or an electrophoresis mass spectrometer to learn about the relation; and using the learnt result, the migration time of the substance having an unknown migration time in the electrophoresis or electrophoresis mass spectrometer is predicted from the structure thereof.

摘要翻译： 当预测在微芯片电泳，毛细管电泳或毛细管电泳质谱仪中具有未知迁移时间的低分子量化合物的迁移时间时，首先，关于具有已知电泳迁移时间的物质，特征量（描述符） 计算其数值表示的结构，以预测特征量（描述符）与迁移时间之间的关系; 通过电泳或电泳质谱仪测量某些物质的迁移时间，以了解关系; 并且使用所获得的结果，从其结构可以预测在电泳或电泳质谱仪中具有未知迁移时间的物质的迁移时间。

公开(公告)号：US20100210023A1

公开(公告)日：2010-08-19

申请号：US12585598

申请日：2009-09-18

申请人： David T.W. Wong ,  Masaru Tomita ,  Masahiro Sugimoto ,  Akiyoshi Hirayama ,  Tomoyoshi Soga

发明人： David T.W. Wong ,  Masaru Tomita ,  Masahiro Sugimoto ,  Akiyoshi Hirayama ,  Tomoyoshi Soga

IPC分类号： G01N33/68 ,  G01N33/00 ,  G01N27/26 ,  B01D57/02

CPC分类号： G01N33/57488 ,  G01N33/57407 ,  G01N2800/18 ,  Y10T436/145555 ,  Y10T436/17 ,  Y10T436/173845 ,  Y10T436/20

摘要： The present invention provides a novel oral cancer and periodontal disease salivary metabolome for use in the diagnosis or for providing a prognosis for oral cancer and periodontal disease in an individual. The present invention also provides novel methods of diagnosing or providing a prognosis for oral cancer or periodontal disease by detecting metabolites found in the saliva of an individual. Finally, the present invention provides kits for the detection of salivary metabolites useful in the diagnosis or prognosis of oral cancer and periodontal disease in an individual.

摘要翻译： 本发明提供了一种用于诊断或提供个体中口腔癌和牙周病的预后的新型口腔癌和牙周病唾液代谢素。 本发明还提供了通过检测个体唾液中发现的代谢物来诊断或提供口腔癌或牙周病预后的新方法。 最后，本发明提供了用于检测个体中可用于口腔癌和牙周病诊断或预后的唾液代谢物的试剂盒。

公开(公告)号：US20130116148A1

公开(公告)日：2013-05-09

申请号：US13805170

申请日：2011-05-17

申请人： Tomoyoshi Soga ,  Masahiro Sugimoto ,  Makoto Suematsu ,  Takafumi Saito ,  Sumio Kawata

发明人： Tomoyoshi Soga ,  Masahiro Sugimoto ,  Makoto Suematsu ,  Takafumi Saito ,  Sumio Kawata

IPC分类号： G01N33/68

CPC分类号： G01N33/576 ,  G01N33/5767 ,  G01N2800/085 ,  G01N2800/7009

摘要： Disclosed is a method for promptly identifying a liver disease. A normal person or a liver disease such as drug-induced liver injury, asymptomatic hepatitis B carrier, chronic hepatitis B, hepatitis C with persistently normal ALT, chronic hepatitis C, cirrhosis type C, hepatocellular carcinoma, simple steatosis, or non-alcoholic steatohepatitis is identified by measuring the concentration of a γ-Glu-X (wherein X represents an amino acid or an amine) peptide or the level of AST or ALT in blood and carrying out, for example, a multiple logistic regression based on the measured value.

摘要翻译： 公开了一种迅速鉴别肝脏疾病的方法。 正常人或肝脏疾病如药物诱导的肝损伤，无症状乙型肝炎携带者，慢性乙型肝炎，丙型肝炎持续ALT正常，慢性丙型肝炎，C型肝硬化，肝细胞癌，单纯脂肪变性或非酒精性脂肪性肝炎 通过测量γ-Glu-X（其中X表示氨基酸或胺）肽的浓度或血液中AST或ALT的水平进行鉴定，并且基于测量值进行多重逻辑回归 。

公开(公告)号：US20110256561A1

公开(公告)日：2011-10-20

申请号：US13140713

申请日：2009-11-26

申请人： Tomoyoshi Soga ,  Masahiro Sugimoto ,  Makoto Suematsu ,  Masashi Honma ,  Takehito Yamamoto ,  Hiroshi Suzuki

发明人： Tomoyoshi Soga ,  Masahiro Sugimoto ,  Makoto Suematsu ,  Masashi Honma ,  Takehito Yamamoto ,  Hiroshi Suzuki

IPC分类号： G01N33/68 ,  C07D233/64 ,  C12M1/40 ,  C07D209/20 ,  G01N33/53 ,  C12Q1/02 ,  C07C229/26 ,  C07C229/36

CPC分类号： G01N33/487 ,  C07K5/0215 ,  G01N33/497 ,  G01N33/576 ,  G01N33/6812 ,  G01N33/6893 ,  G01N2800/08 ,  G01N2800/60

摘要： A normal person (i.e. a control) and liver diseases such as drug induced liver injury, an asymptomatic hepatitis B carrier, an asymptomatic hepatitis C carrier, chronic hepatitis B, chronic hepatitis C, liver cancer, a nonalcoholic fatty liver disease (NAFLD), nonalcoholic steatohepatitis (NASH), and simple steatosis (SS) are identified by measuring the concentrations of γ-Glu-X (X represents an amino acid or an amine) peptides or the levels of AST or ALT in blood and carrying out, for example, a multiple logistic regression based on the measured value.

摘要翻译： 正常人（即对照）和肝脏疾病如药物诱发的肝损伤，无症状乙型肝炎携带者，无症状丙型肝炎携带者，慢性乙型肝炎，慢性丙型肝炎，肝癌，非酒精性脂肪性肝病（NAFLD） 通过测量血液中γ-Glu-X（X代表氨基酸或胺）肽的浓度或AST或ALT的水平，进行例如，通过测定非酒精性脂肪性肝炎（NASH）和简单脂肪变性（SS） ，基于测量值的多重逻辑回归。

公开(公告)号：US09024330B2

公开(公告)日：2015-05-05

申请号：US14141174

申请日：2013-12-26

申请人： Yukihiko Watanabe ,  Sachiko Aoi ,  Masahiro Sugimoto ,  Akitaka Soeno ,  Shinichiro Miyahara

发明人： Yukihiko Watanabe ,  Sachiko Aoi ,  Masahiro Sugimoto ,  Akitaka Soeno ,  Shinichiro Miyahara

IPC分类号： H01L29/47 ,  H01L29/45 ,  H01L29/16 ,  H01L21/285 ,  H01L29/78 ,  H01L21/04

CPC分类号： H01L29/47 ,  H01L21/0485 ,  H01L21/28518 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/78 ,  H01L29/7806 ,  H01L29/7813

摘要： A method of manufacturing a semiconductor device includes forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer, siliciding the ohmic electrode, and forming a Schottky electrode in a second area on the one of the main surfaces of the silicon carbide layer with self alignment. The second area is exposed where the ohmic electrode is not formed.

摘要翻译： 一种制造半导体器件的方法包括：在碳化硅层的一个主表面上的第一区域中形成欧姆电极，将欧姆电极硅化，并在第二区域中形成肖特基电极 具有自对准的碳化硅层。 在没有形成欧姆电极的情况下暴露第二区域。

公开(公告)号：US08833902B2

公开(公告)日：2014-09-16

申请号：US12941914

申请日：2010-11-08

申请人： Takaya Sato ,  Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Masahiro Sugimoto ,  Seiji Suzuki ,  Susumu Hirosawa ,  Takeaki Nakano

发明人： Takaya Sato ,  Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Masahiro Sugimoto ,  Seiji Suzuki ,  Susumu Hirosawa ,  Takeaki Nakano

IPC分类号： B41J2/165

CPC分类号： B41J2/16585 ,  B41J2/16538

摘要： An apparatus includes a recording head having a sealing portion arranged in proximity to nozzle arrays and protruding beyond a nozzle surface. A wiper unit configured to wipe the nozzle surface of the recording head has a first wiper blade and a second wiper blade, and the first wiper blade is arranged to be inclined by an angle θ1 (θ1>0) with respect to a direction orthogonal to the wiping direction within a plane parallel to the nozzle surface, while the second wiper blade is arranged to be inclined by an angle θ2 (θ2

摘要翻译： 一种装置包括具有密封部分的记录头，该密封部分布置在喷嘴阵列附近并突出超过喷嘴表面。 被配置为擦拭记录头的喷嘴表面的刮水器单元具有第一刮水片和第二刮水片，并且第一刮水片布置成相对于第一刮板和倾斜角倾斜1; 在与喷嘴表面平行的平面内与擦拭方向正交的方向，而第二刮片设置成相对于与擦拭方向正交的方向倾斜角度θ; 2（＆amp; the; 2; 0） 飞机。

公开(公告)号：US08716121B2

公开(公告)日：2014-05-06

申请号：US13384850

申请日：2010-08-04

申请人： Akinori Seki ,  Masahiro Sugimoto ,  Akira Kawahashi ,  Yasuo Takahashi ,  Masakatsu Maeda

发明人： Akinori Seki ,  Masahiro Sugimoto ,  Akira Kawahashi ,  Yasuo Takahashi ,  Masakatsu Maeda

IPC分类号： H01L29/161 ,  H01L21/28 ,  H01L29/45

CPC分类号： H01L29/7802 ,  H01L21/0485 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/78

摘要： An ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made of a Ti(1-x-y)Si(x)C(y) ternary film of which a composition ratio is within a composition range that is surrounded by two lines and two curves expressed by an expression x=0 (0.35≦y≦0.5), an expression y=−1.120x+0.5200 (0.1667≦x≦0.375), an expression y=1.778(x−0.375)2+0.1 (0≦x≦0.375) and an expression y=−2.504x2−0.5828x+0.5 (0≦x≦0.1667) and that excludes the line expressed by the expression x=0. The ohmic layer is directly laminated on a surface of a p-type SiC semiconductor.

摘要翻译： 用于p型SiC半导体的欧姆电极，以及形成欧姆电极的方法。 欧姆电极具有欧姆电极层，其具有非晶结构，并且由Ti（1-xy）Si（x）C（y）三元膜制成，其组成比在由 由表达式x = 0（0.35＆nlE; y＆nlE; 0.5）表示的两行和两条曲线，表达式y = -1.120x + 0.5200（0.1667＆nlE; x＆lt; lI; 0.375），表达式y = 1.778（x-0.375）2 +0.1（0＆nlE; x＆nlE; 0.375），并且表达式y = -2.504x2-0.5828x + 0.5（0＆nlE; x＆nlE; 0.1667），并且排除由表达式x = 0表示的行。 欧姆层直接层压在p型SiC半导体的表面上。

公开(公告)号：US08710586B2

公开(公告)日：2014-04-29

申请号：US13229892

申请日：2011-09-12

申请人： Toshimasa Yamamoto ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

发明人： Toshimasa Yamamoto ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

IPC分类号： H01L29/66 ,  H01L29/15

CPC分类号： H01L29/7813 ,  H01L29/086 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/45 ,  H01L29/66068

摘要： A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.

摘要翻译： SiC半导体器件包括：依次堆叠的衬底，漂移层和基极区域; 第一和第二源极区域和基极区域中的接触层; 穿透源区和基区的沟槽; 沟槽中的栅电极; 具有覆盖所述栅电极的接触孔的层间绝缘膜; 源极通过接触孔与源极区域和接触层耦合; 衬底上的漏电极; 和金属硅化物膜。 高浓度第二源区比低浓度第一源区浅，并且具有被层间绝缘膜覆盖的部分，其包括表面附近的低浓度第一部分和比第一部分更深的高浓度第二部分。 第二部分上的金属硅化物膜的厚度大于第一部分。

公开(公告)号：US08518809B2

公开(公告)日：2013-08-27

申请号：US13308721

申请日：2011-12-01

申请人： Hiroki Watanabe ,  Yasuo Kitou ,  Yasushi Furukawa ,  Kensaku Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Hiroki Watanabe ,  Yasuo Kitou ,  Yasushi Furukawa ,  Kensaku Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  C30B25/186 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/02658 ,  H01L21/046 ,  H01L21/0475 ,  H01L29/04

摘要： A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other.

摘要翻译： SiC单晶的制造方法包括制备SiC衬底，将离子注入到SiC衬底的表面部分中以形成离子注入层，通过退火激活注入到SiC衬底的表面部分中的离子，化学蚀刻表面 以形成由SiC衬底中的螺纹位错引起的蚀刻坑，并且在SiC衬底的表面上进行SiC的外延生长以形成SiC生长层，所述SiC生长层包括蚀刻的内壁 以使得在蚀刻坑的内壁上生长的SiC生长层的部分彼此连接的方式形成凹坑。

公开(公告)号：US20130001592A1

公开(公告)日：2013-01-03

申请号：US13531793

申请日：2012-06-25

申请人： Shinichiro Miyahara ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Shinichiro Miyahara ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L29/161

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7825 ,  H01L29/7827

摘要： In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of a (11-20) plane and a (1-100) plane, the second sidewall is at a second acute angle to the one of the (11-20) plane and the (1-100) plane, and the first acute angle is smaller than the second acute angle. A first conductivity type region is in contact with only the first sidewall in the first and second sidewalls of each of the trenches, and a current path is formed on only the first sidewall in the first and second sidewalls.

摘要翻译： 在碳化硅半导体器件中，多个沟槽在一个方向上具有纵向方向并且被布置成条纹图案。 每个沟槽具有在纵向方向上延伸的第一和第二侧壁。 第一侧壁与（11-20）面和（1-100）面中的一个成锐角，第二侧壁与（11-20）面和 （1-100）平面，第一锐角小于第二锐角。 第一导电类型区域仅与每个沟槽的第一和第二侧壁中的第一侧壁接触，并且仅在第一和第二侧壁中的第一侧壁上形成电流通路。