利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

51 条记录 (耗时 0.046 秒)

    Method for performing chemical shrink process over BARC (bottom anti-reflective coating)
    41.
    发明授权
    Method for performing chemical shrink process over BARC (bottom anti-reflective coating) 有权
    在BARC（底部防反射涂层）上进行化学收缩工艺的方法

    公开(公告)号：US08110496B2

    公开(公告)日：2012-02-07

    申请号：US11831137

    申请日：2007-07-31

    申请人： Todd Christopher Bailey ,  Colin J. Brodsky ,  Allen H. Gabor

    发明人： Todd Christopher Bailey ,  Colin J. Brodsky ,  Allen H. Gabor

    IPC分类号： B32B3/24 ,  H01L21/4763

    CPC分类号： H01L21/76802 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76816 ,  Y10T428/24322 ,  Y10T428/24331 ,  Y10T428/24521 ,  Y10T428/249953

    摘要： A structure and a method for forming the same. The method comprises providing a structure including (a) a hole layer, (b) a BARC (bottom antireflective coating) layer on the top of the hole layer, and (c) a patterned photoresist layer on top of the BARC layer and having a photoresist hole; etching the BARC layer through the photoresist hole to extend the photoresist hole to the hole layer; performing the chemical shrinking process to shrink the extended photoresist hole; and etching the hole layer through the shrunk, extended photoresist hole so as to form a hole in the hole layer.

    摘要翻译： 一种结构及其形成方法。 该方法包括提供一种结构，其包括（a）空穴层，（b）在空穴层顶部的BARC（底部抗反射涂层）层，和（c）在BARC层的顶部上的图案化光致抗蚀剂层， 光刻胶孔; 通过光致抗蚀剂孔蚀刻BARC层以将光致抗蚀剂孔延伸到孔层; 执行化学收缩过程以收缩延伸的光致抗蚀剂孔; 并且通过收缩的延伸的光致抗蚀剂孔蚀刻孔层，以在孔层中形成孔。

    Multiple exposure lithography method incorporating intermediate layer patterning
    43.
    发明授权
    Multiple exposure lithography method incorporating intermediate layer patterning 失效
    结合中间层图案的多次曝光光刻方法

    公开(公告)号：US07914975B2

    公开(公告)日：2011-03-29

    申请号：US11733412

    申请日：2007-04-10

    申请人： Sean D. Burns ,  Allen H. Gabor ,  Scott D. Halle ,  Dirk Pfeiffer

    发明人： Sean D. Burns ,  Allen H. Gabor ,  Scott D. Halle ,  Dirk Pfeiffer

    IPC分类号： G03F7/26

    CPC分类号： H01L21/31144 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/32139

    摘要： A method of patterning a semiconductor substrate includes creating a first set of patterned features in a first inorganic layer; creating a second set of patterned features in one of the first inorganic layer and a second inorganic layer; and transferring, into an organic underlayer, both the first and second sets of patterned features, wherein the first and second sets of patterned features are combined into a composite set of patterned features that are transferable into the substrate by using the organic underlayer as a mask.

    摘要翻译： 图案化半导体衬底的方法包括在第一无机层中形成第一组图案化特征; 在所述第一无机层和第二无机层之一中产生第二组图案特征; 以及将第一组和第二组图案特征转移到有机底层中，其中第一组和第二组图案化特征被组合成通过使用有机底层作为掩模可转移到衬底中的图案化特征的复合组合 。

    METHOD FOR MONITORING FOCUS ON AN INTEGRATED WAFER
    44.
    发明申请
    METHOD FOR MONITORING FOCUS ON AN INTEGRATED WAFER 有权
    用于监测聚合波的聚焦方法

    公开(公告)号：US20090284722A1

    公开(公告)日：2009-11-19

    申请号：US12122929

    申请日：2008-05-19

    申请人： Allen H. Gabor ,  Wai-Kin Li

    发明人： Allen H. Gabor ,  Wai-Kin Li

    IPC分类号： G03B27/42 ,  G06K9/00

    CPC分类号： G03F7/70333 ,  G03F7/70508 ,  G03F7/70641

    摘要： A method and apparatus are provided for improving the focusing of a substrate such as a wafer during the photolithography imaging procedure of a semiconductor manufacturing process. The invention is particularly useful for step-and-scan system and the CD of two features in each exposure field are measured in fields exposed at varying focus to form at least two Bossung curves. Exposure focus instructions are calculated based on the intersection point of the curves and the wafer is then scanned and imaged based on the calculated exposure focus instructions. In another aspect of the invention, when multiple wafers are being processed operational variances may cause a drift in the focus. The focus drift can be easily corrected by measuring the critical dimension of each of the features and comparing the difference to determine if any focus offset is needed to return the focus to the original calculated focus value.

    摘要翻译： 提供了一种用于在半导体制造工艺的光刻成像过程期间改善诸如晶片之类的衬底的聚焦的方法和装置。 本发明对于步进扫描系统特别有用，并且每个曝光场中的两个特征的CD在以不同焦点曝光的场中测量以形成至少两个Bossung曲线。 基于曲线的交点，然后基于计算出的曝光聚焦指令对晶片进行扫描和成像，计算曝光对焦指令。 在本发明的另一方面，当正在处理多个晶片时，操作方差可能导致焦点漂移。 可以通过测量每个特征的临界尺寸并比较差异来确定是否需要任何聚焦偏移以将焦点返回到原始计算的聚焦值，从而容易地校正聚焦漂移。

    LINE ENDS FORMING
    46.
    发明申请
    LINE ENDS FORMING 有权
    线端形成

    公开(公告)号：US20090068837A1

    公开(公告)日：2009-03-12

    申请号：US11853353

    申请日：2007-09-11

    申请人： Matthew E. Colburn ,  Allen H. Gabor ,  Scott D. Halle ,  Donald J. Samuels

    发明人： Matthew E. Colburn ,  Allen H. Gabor ,  Scott D. Halle ,  Donald J. Samuels

    IPC分类号： H01L21/44

    CPC分类号： G11C11/412 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11 ,  H01L27/115

    摘要： Methods of forming line ends and a related memory cell including the line ends are disclosed. In one embodiment, the method includes forming a first device element and a second device element separated from the first device element by a space; and forming a first line extending from the first device element, the first line including a bulbous line end over the space and distanced from the first device element, and a second line extending from the second device element, the second line including a bulbous line end over the space and distanced from the second device element.

    摘要翻译： 公开了形成线端的方法和包括线端的相关存储单元。 在一个实施例中，该方法包括通过空间形成与第一器件元件分离的第一器件元件和第二器件元件; 以及形成从所述第一装置元件延伸的第一线，所述第一线包括在所述空间上并与所述第一装置元件间隔开的球形线端，以及从所述第二装置元件延伸的第二线，所述第二线包括球根线端 并且与第二设备元件分开。

    Binary OPC for assist feature layout optimization
    50.
    发明授权
    Binary OPC for assist feature layout optimization 失效

    公开(公告)号：US07001693B2

    公开(公告)日：2006-02-21

    申请号：US10378575

    申请日：2003-02-28

    申请人： Lars W. Liebmann ,  Richard A. Ferguson ,  Allen H. Gabor ,  Mark A. Lavin

    发明人： Lars W. Liebmann ,  Richard A. Ferguson ,  Allen H. Gabor ,  Mark A. Lavin

    IPC分类号： G03F9/00

    CPC分类号： G03F1/36

    摘要： A method of forming a photolithographic mask layout with Sub-Resolution Assist Feature (SRAF) elements on a mask for correcting for proximity effects for a pattern imaged comprising the steps of developing a layout of mask features for printing main pattern features. Provide a table of SRAF element data including spacing of main pattern features and SRAF elements, applying SRAF elements to the mask layout as a function of spacing of main pattern features and SRAF elements, legalizing the SRAF elements as a function of style options, and providing a target pattern comprising a modified layout for the mask, identifying problem edge segments of an SRAF element of the target pattern at risk of causing a printing defect, applying a selected bias to the problem edge segments to modify the pattern where there are areas of SRAF element loss, and providing an output of a modified pattern with modified SRAF elements removing the areas of SRAF element loss. The system can provide SRAF elements to the mask layout as a function of spacing of main pattern features and SRAF elements may be based on data from the SRAF table; or the system can applying model based OPC for exposure dose values based on data from the SRAF table.