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公开(公告)号：US6046364A
公开(公告)日：2000-04-04
申请号：US206427
申请日：1998-12-07
IPC分类号： B01J19/00 , C07C45/85 , C07C49/167 , C07C49/92 , C07F1/08 , C07F7/08 , C23C16/00 , C23C16/44 , H01L21/285 , C07C205/00
摘要： A process for recovering a 1,1,1,5,5,5-hexafluoro-2,4-pentanedione ligand from a metal-ligand complex byproduct such as Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2, comprising: providing a copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 in a process stream; cooling and condensing the copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 to separate it from the process stream; contacting the copper-ligand complex byproduct of Cu.sup.+2 (1,1,1,5,5,5-hexafluoro-2,4-pentanedionate.sup.-1).sub.2 with a protonation agent, such as: sulfuric acid, hydrochloric acid, hydroiodic acid, hydrobromic acid, trifluoroacetic acid, trifluoromethanesulfonic acid, acid ion exchange resin, hydrogen sulfide, water vapor and mixtures thereof; and recovering 1,1,1,5,5,5-hexafluoro-2,4-pentanedione.
摘要翻译： 从金属 - 配体络合物副产物例如Cu + 2（1,1,1,5,5,5-四甲基-1,1,1,5,5,5-四氢 - 六氟-2,4-戊二酮-1）2，其包括：提供Cu + 2（1,1,1,5,5,5-六氟-2,4-戊二酮-1）2的铜配体络合物副产物 流程流 冷却并冷凝Cu + 2（1,1,1,5,5,5-六氟-2,4-戊二酮-1）2的铜配体络合物副产物，使其与工艺流分离; 将Cu + 2（1,1,1,5,5,5-六氟-2,4-戊二酮-1）2的铜配体络合物副产物与质子化试剂如硫酸，盐酸，氢碘酸 酸，氢溴酸，三氟乙酸，三氟甲磺酸，酸性离子交换树脂，硫化氢，水蒸气及其混合物; 并回收1,1,1,5,5,5-六氟-2,4-戊二酮。
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公开(公告)号：US08859785B2
公开(公告)日：2014-10-14
申请号：US12785041
申请日：2010-05-21
IPC分类号： C07D207/46 , C07F3/00
CPC分类号： C07F3/003
摘要： A compound comprising one or more polyfunctionalized pyrrolyl anions coordinated to a metal selected from the group consisting of barium, strontium, magnesium, radium or calcium or mixtures thereof. Alternatively, one anion can be substituted with and a second non-pyrrolyl anion.Synthesis of the novel compounds and their use to form BST films is also contemplated.
摘要翻译： 包含与选自钡，锶，镁，镭或钙的金属或其混合物配位的一种或多种多官能化吡咯基阴离子的化合物。 或者，一个阴离子可以被第二个非吡咯基阴离子取代。 还考虑了新型化合物的合成及其用于形成BST膜的用途。
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43.发明授权Methods for depositing metal films onto diffusion barrier layers by CVD or ALD processes 失效通过CVD或ALD工艺将金属膜沉积到扩散阻挡层上的方法公开(公告)号：US07985449B2
公开(公告)日：2011-07-26
申请号：US11738187
申请日：2007-04-20
IPC分类号： C23C16/06
CPC分类号： H01L21/76843 , C23C14/58 , C23C14/5846 , H01L21/28556 , H01L21/3205 , H01L21/32051 , H01L21/76856 , H01L21/76876
摘要： A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.
摘要翻译： 描述了在其上沉积有扩散阻挡层的衬底表面上沉积金属膜的方法。 在本发明的一个实施方案中，该方法包括：提供基本上不含元素金属的扩散阻挡层的表面，并通过使用有机金属前体沉积在至少部分表面上形成金属膜。 在某些实施方案中，扩散阻挡层可以在形成步骤的至少一部分之前或期间暴露于粘合促进剂。 合适的粘合促进剂包括氮，含氮化合物，含碳化合物，含碳和氮的化合物，含硅化合物，含硅和碳的化合物，硅，碳和氮的化合物或其混合物。 本发明的方法提供了在扩散阻挡层和金属膜之间具有增强的粘附性的基底。
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44.发明授权Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants 有权孔原子，孔隙前体和使用它们的方法提供具有低介电常数的多孔有机硅玻璃膜公开(公告)号：US07943195B2
公开(公告)日：2011-05-17
申请号：US12115838
申请日：2008-05-06
申请人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
发明人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02343 , H01L21/02351 , H01L21/31695 , Y10T428/31504
摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.
摘要翻译： 多孔有机硅玻璃（OSG）膜由式SivOwCxHyFz表示的材料的单相组成，其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜 65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。 随后除去致孔剂以提供多孔膜。 用于形成膜的组合物，例如试剂盒包括致孔剂和前体。 致孔前体也可用于提供薄膜。
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公开(公告)号：US20080318418A1
公开(公告)日：2008-12-25
申请号：US12139585
申请日：2008-06-16
CPC分类号： H01L21/28556 , C23C16/04 , C23C16/18 , H01L21/28562 , H01L21/76843 , H01L21/76868 , H01L21/76871 , H01L21/76877
摘要： A process for preparing a multi-layer substrate is described herein. In one embodiment, the process provides a multi-layer substrate comprising a first layer and a second layer where the process comprises the steps of providing the first layer comprising a barrier area and a copper area; and depositing the second layer comprising copper onto the first layer wherein the depositing provides the second layer comprising a first thickness ranging from about 20 Angstroms to about 2,000 Angstroms onto the barrier area and a second thickness ranging from about 0 Angstroms to about 1,000 Angstroms onto the copper area in the first layer wherein the first thickness is greater than the second thickness.
摘要翻译： 本文描述了制备多层基底的方法。 在一个实施例中，该方法提供了包括第一层和第二层的多层衬底，其中该方法包括提供包括阻挡区域和铜区域的第一层的步骤; 以及将包含铜的所述第二层沉积到所述第一层上，其中所述沉积提供所述第二层，所述第二层包括从所述阻挡区域上的约20埃到约2000埃的第一厚度，以及从约0埃到约1,000埃的第二厚度 第一层中的铜区域，其中第一厚度大于第二厚度。
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46.发明申请Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants 有权孔原子，孔隙前体及其使用方法提供具有低介电常数的多孔有机硅玻璃膜公开(公告)号：US20080271640A1
公开(公告)日：2008-11-06
申请号：US12115838
申请日：2008-05-06
申请人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
发明人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
IPC分类号： D06M15/643 , C23C16/00 , B32B9/04 , C07F5/00
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02343 , H01L21/02351 , H01L21/31695 , Y10T428/31504
摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.
摘要翻译： 多孔有机硅玻璃（OSG）膜由以下分子式表示的材料的单相组成：由下式表示的材料：由下式表示的材料： 其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜65原子％，x为 5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。 随后除去致孔剂以提供多孔膜。 用于形成膜的组合物，例如试剂盒包括致孔剂和前体。 致孔前体也可用于提供薄膜。
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47.发明授权Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants 有权孔原子，孔隙前体和使用它们的方法提供具有低介电常数的多孔有机硅玻璃膜公开(公告)号：US07384471B2
公开(公告)日：2008-06-10
申请号：US10409468
申请日：2003-04-07
申请人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
发明人： Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Manchao Xiao , John Anthony Thomas Norman
IPC分类号： C23C16/40 , C23C16/513
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02343 , H01L21/02351 , H01L21/31695 , Y10T428/31504
摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.
摘要翻译： 多孔有机硅玻璃（OSG）膜由以下分子式表示的材料的单相组成：由下式表示的材料：由下式表示的材料： 其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜65原子％，x为 5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。 随后除去致孔剂以提供多孔膜。 用于形成膜的组合物，例如试剂盒包括致孔剂和前体。 致孔前体也可用于提供薄膜。
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48.发明授权Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes 失效通过CVD或ALD工艺在扩散阻挡层上沉积金属膜的方法公开(公告)号：US07311946B2
公开(公告)日：2007-12-25
申请号：US10428447
申请日：2003-05-02
CPC分类号： H01L21/76843 , C23C14/58 , C23C14/5846 , H01L21/28556 , H01L21/3205 , H01L21/32051 , H01L21/76856 , H01L21/76876
摘要： A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.
摘要翻译： 描述了在其上沉积有扩散阻挡层的衬底表面上沉积金属膜的方法。 在本发明的一个实施方案中，该方法包括：提供基本上不含元素金属的扩散阻挡层的表面，并通过使用有机金属前体沉积在至少部分表面上形成金属膜。 在某些实施方案中，扩散阻挡层可以在形成步骤的至少一部分之前或期间暴露于粘合促进剂。 合适的粘合促进剂包括氮，含氮化合物，含碳化合物，含碳和氮的化合物，含硅化合物，含硅和碳的化合物，硅，碳和氮的化合物或其混合物。 本发明的方法提供了在扩散阻挡层和金属膜之间具有增强的粘附性的基底。
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公开(公告)号：US07205422B2
公开(公告)日：2007-04-17
申请号：US11111452
申请日：2005-04-21
摘要： Metal ketoiminate or diiminate complexes, containing copper, silver, gold, cobalt, ruthenium, rhodium, platinum, palladium, nickel, osmium, or indium, and methods for making and using same are described herein. In certain embodiments, the metal complexes described herein may be used as precursors to deposit metal and metal-containing films on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.
摘要翻译： 本文描述了含有铜，银，金，钴，钌，铑，铂，钯，镍，锇或铟的金属酮亚胺酯或二亚胺络合物及其制备和使用方法。 在某些实施方案中，本文所述的金属络合物可用作通过例如原子层沉积或化学气相沉积条件在基底上沉积金属和含金属膜的前体。
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公开(公告)号：US06838573B1
公开(公告)日：2005-01-04
申请号：US10768370
申请日：2004-01-30
CPC分类号： C07C251/08 , C07C49/92 , C23C16/18
摘要： This invention relates to copper(+1)(β-diketonate)(L) and related copper complexes such as copper (+1)(β-ketoiminate)(L) represented by the formula: wherein X represents O or NR9, R1 and R3 are each independently comprised of the group C1-8 alkyl, C1-8 fluoroalkyl, aryl, C1-8 alkoxy, and C1-8 alkyl ethers and R2 is H, C1-8 alkyl, C1-8 alkoxy, and halogen, R9 is C1-8 alkyl, C1-8 fluoroalkyl, phenyl, alkylphenyl, trialkylsilyl, and L represents a ligand having the structure: (R4)(R5)C═(R6)(R7) or R4—C≡C—R7 wherein R4, is comprised of the group C1-8 alkanol, C1-8 alkoxyalkanol, C1-8 unsaturated alkoxyalkanol, trialkylsilanol, C1-8 aalkylamine, phenylamine; R5, R6, and R7 are comprised of the group H, C1-8 alkyl, triakylsilyl, alkoxy or phenyl.
摘要翻译： 本发明涉及由下式表示的铜（+1）（β-二酮）（L）和相关的铜配合物如铜（+1）（β-酮酰亚胺）（L））：其中X代表O或NR9，R1和 R 3各自独立地由C 1-8烷基，C 1-8氟烷基，芳基，C 1-8烷氧基和C 1-8烷基醚组成，R 2是H，C 1-8烷基，C 1-8烷氧基和卤素，R 9 C 1-8烷基，C 1-8氟烷基，苯基，烷基苯基，三烷基甲硅烷基，L表示具有以下结构的配位体：其中R 4由C 1-8链烷醇，C 1-8烷氧基烷醇，C 1-8不饱和烷氧基烷醇， 三烷基硅烷醇，C 1-8烷基胺，苯胺; R5，R6和R7由H，C1-8烷基，三烷基甲硅烷基，烷氧基或苯基组成。
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