摘要:
A phase detector circuit having four dominant type flip-flop circuits and at least one logic gate. The phase detector circuit is responsive to changes of two input signals, and produces output signals related to the relative phase of the input signals having duty cycle. The output signals have a predetermined level only for the period the phases of the input signals differ. When the phases of the input signals are the same, the output signals of the phase detector circuit will be at another level.
摘要:
A plurality of signal lines receiving signals with different phases are connected to the reference potential point through switching elements. The switching elements connected to signal lines other than the signal line receiving an active signal are rendered conductive by the active signal on the signal line and the other signal lines are led to the reference potential.
摘要:
A constant-voltage circuit in which a diode and an MOS transistor are connected in series between power supply terminals between which a battery power source is connected. The MOS transistor is biased to operate in the saturation region. The forward voltage drop across the diode is kept substantially constant independent of variations in battery voltage and temperature. This constant-voltage circuit may preferably be used in a battery checker circuit for detecting the end of battery life.
摘要:
An output circuit is provided in which a first IG-FET of a first conductivity type is connected between a first potential supply terminal and an output terminal and having its substrate controlled by a third potential higher than the first potential of the first potential supply terminal and a second IG-FET of a second conductivity type connected between a second potential supply terminal having a second potential lower than the first potential and the output terminal and having its substrate electrode supplied with the second potential. A control circuit is further provided which receives an input signal and control signal and controls the output circuit to permit the latter to produce one of the first potential, second potential and high impedance state. The output circuit and control circuit are combined to provide a converter circuit for converting the level of a CML (complementary MOS Transistor Logic) to a TTL (Transistor-Transistor Logic). A compensation circuit is further provided which, when a potential on the output terminal is shifted from the second potential to the first potential, permits a rise of the second potential to be sharpened. The compensation circuit includes a third IG-FET of a second conductivity type connected between the first potential supply terminal and the output terminal.
摘要:
A position and direction sensing mark is formed on an integrated circuit pellet formed with a prescribed electrode pattern. The position and direction sensing mark comprises a plurality of strips which are extended in a direction different from that in which the electrode pattern is extended and are arranged in turn at prescribed intervals in a direction intersecting the different direction at right angles thereto.
摘要:
A semiconductor memory device comprising an N conductivity type semiconductor substrate, a P conductivity type well formed in a specified section of the surface of the semiconductor substrate, N conductivity type source and drain regions formed in the P conductivity type well, and a gate insulation layer deposited on the surface of the well over the source and drain regions. The P conductivity type well has a higher impurity concentration than the N conductivity type semiconductor substrate and the N conductivity type source and drain regions have a higher impurity concentration than the P conductivity type well. An insulation film is formed on the drain region and the insulation film, a metal electrode layer deposited on the insulation film and drain region collectively institute a capacitor.
摘要:
Provided is a semiconductor memory device comprising a pair of data input lines, a pair of data output lines, memory cells arranged in the form of a matrix, the memory cell of each column being connected between a pair of data lines, the memory cell of each row being connected to a row selection line, a memory cell selection circuit for generating column and row designation signals in order to select a desired one of said memory cells, a switching circuit disposed in each column and turned on upon receipt of a column designation signal from the memory cell selection circuit to connect the data line to a corresponding one of the data input lines, and a data detection circuit connected between the pair of data lines of each column and adapted, upon receipt of a column signal from the memory cell selection circuit, to transmit an inverted signal of a signal on the data line onto the data output line.
摘要:
A plurality of logical control circuits each having a storage or delay function are driven by a writing-in clock pulse .phi.1 and a reading-out clock pulse .phi.2 supplied in common thereto and receiving output signals from a Read Only Memory constructed in the form of a matrix. This Read Only Memory is constituted by a plurality of logical gate circuits each supplied with a plurality of prescribed signals of a pulse signal group having a plurality of input signals I1, I2, . . . In and control pulse signals T8, D4, A and B different in frequency from the clock pulses .phi.1 and .phi.2. The logical control circuit includes a first logical gate supplied with a feed back signal from the logical control circuit and a prescribed control pulse signal and a second logical gate supplied with an output signal generated from the corresponding logical gate circuit of the Read Only Memory in accordance with the prescribed control pulse signal and prescribed input signals and with an output signal from the first logical gate the output of the second logical gate is delayed in response to clock pulses .phi.1 and .phi.2 and then is generated as an output signal from the logical control circuit.
摘要:
This invention provides a TAB type semiconductor device in which a plurality of lead pattern regions are formed on a film-like tape formed of an insulating resin, and LSI chips are inner lead-bonded onto the corresponding lead pattern regions. A linear reference potential supply wiring pattern is formed on one edge portion in the widthwise direction of a formation surface of the lead pattern regions on the tape to extend in the tape extending direction. The wiring pattern is electrically connected to a reference potential supply lead (14A) of each lead pattern region.
摘要:
A programmable logic circuit for deriving a logic output of first and second signals includes a 2-input logic gate for deriving a logic output of two signals. The 2-input logic gate is constituted by connecting two 3-state circuits in a wired OR configuration. One of the 3-state circuits includes a data input terminal, output control input terminal, and data output terminal, the output control input terminal receives an inverted signal of the second signal, and the data output terminal is set to one of three states of "1", "0", and the high impedance. Likewise, the other 3-state circuit includes a data input terminal, output control input terminal, and data output terminal, the output control input terminal receives the second signal, and the data output terminal is set to one of three states of "1", "0", and the high impedance. Each of the data input terminals of the 3-state circuits is supplied with a desired one of the first signal, an inverted signal of the first signal, a "0" level signal, and a "1" level signal in a programmable fashion. Various logic gates can be realized by programming the supplying states of the four signals.