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119 条记录 (耗时 0.036 秒)

    ULTRASONIC FLOW METER DEVICE
    42.
    发明申请
    ULTRASONIC FLOW METER DEVICE 审中-公开
    超声波流量计装置

    公开(公告)号：US20120266690A1

    公开(公告)日：2012-10-25

    申请号：US13510567

    申请日：2010-11-17

    申请人： Yukinori Ozaki ,  Yuji Fujii ,  Hajime Miyata ,  Makoto Nakano

    发明人： Yukinori Ozaki ,  Yuji Fujii ,  Hajime Miyata ,  Makoto Nakano

    IPC分类号： G01F1/66

    CPC分类号： G01F1/66 ,  G01F1/662 ,  G01F1/667

    摘要： In an ultrasonic flow meter device of the present invention, a compressive conductive fastener member including conductive parts is retained between a casing having a fluid passage in which a fluid which is a measurement target flows; ultrasonic transmitters/receivers mounted to the casing, and a control printed board disposed to face the ultrasonic transmitters/receivers, and in this state, the control printed board is fastened. Thereby, the ultrasonic transmitters/receivers are electrically connected to the control printed board without the use of lead wires. A cost increase can be suppressed, and an influence of an outside noise can be mitigated because of omission of the lead wires. Therefore, reliability of the ultrasonic transmitters/receivers can be improved.

    摘要翻译： 在本发明的超声波流量计装置中，包括导电部的压缩导电性紧固件被保持在具有流体通道的壳体之间，流体是流过测量对象的流体; 安装到壳体的超声波发射器/接收器以及设置成面对超声波发射器/接收器的控制印刷电路板，并且在该状态下，控制印刷电路板被固定。 因此，超声波发射器/接收器在不使用引线的情况下电连接到控制印刷电路板。 可以抑制成本增加，并且由于省略引线可以减轻外部噪声的影响。 因此，可以提高超声波发射机/接收机的可靠性。

    METHODS AND SYSTEMS FOR ASSISTED DIRECT START CONTROL
    49.
    发明申请
    METHODS AND SYSTEMS FOR ASSISTED DIRECT START CONTROL 有权
    辅助直接起动控制的方法和系统

    公开(公告)号：US20110039657A1

    公开(公告)日：2011-02-17

    申请号：US12541023

    申请日：2009-08-13

    申请人： Alex O'Connor Gibson ,  Gregory Michael Pietron ,  Seung-Hoon Lee ,  Yuji Fujii

    发明人： Alex O'Connor Gibson ,  Gregory Michael Pietron ,  Seung-Hoon Lee ,  Yuji Fujii

    IPC分类号： B60W10/10 ,  B60W30/00

    CPC分类号： F16H61/0031 ,  F02N7/00 ,  F16H2061/0034 ,  F16H2312/14 ,  Y10T477/688 ,  Y10T477/6939

    摘要： Systems and methods are provided for controlling a vehicle system including an engine that is selectively shut-down during engine idle-stop conditions, the system further including a hydraulic circuit comprising a hydraulically actuated transmission component, an accumulator, and an auxiliary transmission fluid pump. One example method comprises, during a first idle-stop engine shut-down condition, where the accumulator pressure is above a threshold, delivering pressurized transmission fluid to the hydraulic circuit from the accumulator, while disabling the auxiliary pump. The method further comprises, during a second idle-stop engine shut-down condition, where the accumulator pressure is below the threshold, operating the auxiliary pump and delivering at least some pressurized transmission fluid to the hydraulic circuit from the operating pump without travelling through the accumulator.

    摘要翻译： 提供的系统和方法用于控制车辆系统，其包括在发动机怠速停止状态期间选择性地关闭的发动机，该系统还包括液压回路，该液压回路包括液压致动的变速部件，蓄能器和辅助变速器油泵。 一个示例性方法包括在第一怠速停止发动机关闭状态期间，蓄能器压力高于阈值，同时禁用辅助泵，将加压的变速器流体从蓄能器输送到液压回路。 该方法还包括在第二怠速停止发动机关闭状态期间，蓄能器压力低于阈值，操作辅助泵并且从操作泵将至少一些加压变速器流体输送到液压回路而不经过 累加器。

    Manufacturing method of a semiconductor device
    50.
    发明授权
    Manufacturing method of a semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US07776660B2

    公开(公告)日：2010-08-17

    申请号：US11833619

    申请日：2007-08-03

    申请人： Isao Miyashita ,  Yuji Fujii ,  Hajime Ebara ,  Katsuo Ishizaka ,  Norio Hosoya ,  Hidekazu Okuda

    发明人： Isao Miyashita ,  Yuji Fujii ,  Hajime Ebara ,  Katsuo Ishizaka ,  Norio Hosoya ,  Hidekazu Okuda

    IPC分类号： H01L21/332

    CPC分类号： H01L29/66348 ,  H01L23/49562 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/7397 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

    摘要： Provided is a technology of carrying out activation annealing of n type impurity ions implanted for the formation of a field stop layer (n+ type semiconductor region) and activation annealing of p type impurity ions implanted for the formation of a collector region (p+ type semiconductor region) in separate steps to adjust an activation ratio of the n type impurity ions in the field stop layer to 60% or greater and an activation ratio of the p type impurity ions in the collector region to from 1 to 15%. This makes it possible to form an IGBT having a high breakdown voltage and high-speed switching characteristics. Moreover, use of a film stack made of nickel silicide, titanium, nickel and gold films for a collector electrode makes it possible to provide an ohmic contact with the collector region.

    摘要翻译： 提供了用于形成场致发射层（n +型半导体区域）而注入的n型杂质离子的活化退火和注入用于形成集电极区域（p +型半导体区域）的p型杂质离子的活化退火的技术 ），将场致发光层中的n型杂质离子的活化比例调整为60％以上，将集电区域的p型杂质离子的活化比例调整为1〜15％。 这使得可以形成具有高击穿电压和高速开关特性的IGBT。 此外，使用由硅化镍，钛，镍和金膜构成的用于集电极电极的膜堆叠使得可以与集电极区域提供欧姆接触。