利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

275 条记录 (耗时 0.034 秒)

    Magnetoresistance effect element having improved biasing films, and magnetic head and magnetic recording device using the same
    47.
    发明授权
    Magnetoresistance effect element having improved biasing films, and magnetic head and magnetic recording device using the same 失效
    具有改进的偏置膜的磁阻效应元件以及使用其的磁头和磁记录装置

    公开(公告)号：US6111722A

    公开(公告)日：2000-08-29

    申请号：US71040

    申请日：1998-05-04

    申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Yuichi Ohsawa

    发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Yuichi Ohsawa

    IPC分类号： G11B5/39 ,  G11B5/48 ,  G11C11/15 ,  H01F10/00 ,  H01F10/08 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3967 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/488

    摘要： A spin valve GMR element comprises a pair of magnetic biasing films disposed with a predetermined gap and a spin valve GMR film disposed in such a manner that at least both edge portions thereof are stacked on the pair of magnetic biasing films. The spin valve GMR film has a free layer containing a magnetic layer large in its saturation magnetization such as a Co containing magnetic layer. The magnetic biasing film has a laminate film composed of a high saturation magnetization magnetic layer and a magnetic hard layer. The high saturation magnetization layer, for a saturation magnetization Ms.sup.free of a free layer and a saturation magnetization of Ms.sup.hard of a magnetic hard layer, has a saturation magnetization Ms.sup.high satisfying at least one of Ms.sup.high .gtoreq.Ms.sup.free and Ms.sup.high .gtoreq.Ms.sup.hard. According to such a bias structure, when a spin valve GMR element of an over laid structure is narrowed in its track, Barkhausen noise can be effectively suppressed from occurring.

    摘要翻译： 自旋阀GMR元件包括以预定间隙设置的一对磁偏置膜和以至少两个边缘部分堆叠在一对磁偏置膜上的方式设置的自旋阀GMR膜。 自旋阀GMR膜具有包含其饱和磁化强度大的含有Co的磁性层的磁性层的自由层。 磁偏置膜具有由高饱和磁化磁化层和磁性硬质层构成的层叠膜。 高饱和磁化层，对于磁性硬层的自由层的饱和磁化强度Msfree和Mshard的饱和磁化强度，具有满足Mshigh> / = Msfree和Mshigh> / = Mshard中的至少一个的饱和磁化强度Mshigh。 根据这种偏压结构，当过度铺设结构的自旋阀GMR元件在其轨道上变窄时，可以有效地抑制巴克豪森噪声的发生。

    Hard magnetic film structural body, magnetoresistance effect device thereof, magnetic head, magnetic recording/reproducing head thereof, and magnetic record medium thereof, and magnetic storing apparatus thereof
    48.
    发明申请
    Hard magnetic film structural body, magnetoresistance effect device thereof, magnetic head, magnetic recording/reproducing head thereof, and magnetic record medium thereof, and magnetic storing apparatus thereof 有权
    硬磁膜结构体，磁电阻效应器件，磁头，磁记录/再现头及其磁记录介质及其磁存储装置

    公开(公告)号：US20060198063A1

    公开(公告)日：2006-09-07

    申请号：US11417195

    申请日：2006-05-04

    申请人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    发明人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  H01F10/132 ,  H01F10/16 ,  H01F10/3281 ,  H01L43/08

    摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.

    摘要翻译： 含有Co作为结构元件的硬磁性膜的基膜具有形成在基板主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层） 并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。 在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。 利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。 对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。 含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。

    Magneto-resistance effect head
    49.
    发明授权
    Magneto-resistance effect head 失效
    磁阻效应头

    公开(公告)号：US6146776A

    公开(公告)日：2000-11-14

    申请号：US72044

    申请日：1998-05-05

    申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Naoyuki Inoue ,  Hitoshi Iwasaki ,  Noriyuki Ito ,  Taro Oike ,  Hiroaki Kawashima

    发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Naoyuki Inoue ,  Hitoshi Iwasaki ,  Noriyuki Ito ,  Taro Oike ,  Hiroaki Kawashima

    IPC分类号： G11B5/012 ,  G11B5/39 ,  H01F10/30 ,  H01L43/08 ,  G11B5/66

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/012 ,  Y10S428/90 ,  Y10T428/1129

    摘要： A GMR head comprising a spin valve GMR film, which has a free layer containing a Co containing magnetic layer, and a hard magnetic biasing film for inputting a bias magnetic field to the spin valve GMR film. The hard magnetic biasing film is constituted of a film formed by laminating a hard magnetic layer on the magnetic under layer. The hard magnetic layer is disposed adjoining to edge portion of the spin valve GMR film through the magnetic under layer. The magnetic under layer has saturation magnetization Ms.sup.under which satisfies at least one condition of Ms.sup.under .gtoreq.Ms.sup.free and Ms.sup.under .gtoreq.Ms.sup.hard when saturation magnetization of the free layer is Ms.sup.free and saturation magnetization of the hard magnetic layer is Ms.sup.hard. In a MR head of this abutted junction structure, even when the track width is narrowed, occurrence of Barkhausen noise can be effectively suppressed.

    摘要翻译： 包括具有包含含钴磁性层的自由层的自旋阀GMR膜的GMR头和用于向偏转阀GMR膜输入偏置磁场的硬磁偏置膜。 硬磁偏置膜由在磁性底层上层叠硬磁性层而形成的膜构成。 硬磁性层通过磁性底层设置在自旋阀GMR膜的边缘部分附近。 当自由层的饱和磁化强度为Msfree且硬磁层的饱和磁化强度为Mshard时，磁性底层具有满足Msunder> / = Msfree和Msunder> / = Mshard的至少一个条件的饱和磁化强度Msunder。 在该对接结结构的MR头中，即使轨道宽度变窄，也能够有效地抑制巴克豪森噪声的发生。

    Magnetoresistance effect device having a bi-crystal structure composed of main grains each having a plurality of sub-grains
    50.
    发明授权
    Magnetoresistance effect device having a bi-crystal structure composed of main grains each having a plurality of sub-grains 有权
    具有由具有多个亚晶粒的主晶粒组成的双晶结构的磁阻效应器件

    公开(公告)号：US07336454B2

    公开(公告)日：2008-02-26

    申请号：US11417195

    申请日：2006-05-04

    申请人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    发明人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  H01F10/132 ,  H01F10/16 ,  H01F10/3281 ,  H01L43/08

    摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.

    摘要翻译： 含有Co作为结构元件的硬磁性膜的基膜具有形成在基板的主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层） 并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。 在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。 利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。 对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。 含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。