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1.发明授权Magnetoresistance effect element having improved biasing films, and magnetic head and magnetic recording device using the same 失效具有改进的偏置膜的磁阻效应元件以及使用其的磁头和磁记录装置
公开(公告)号：US6111722A
公开(公告)日：2000-08-29
申请号：US71040
申请日：1998-05-04
IPC分类号： G11B5/39 , G11B5/48 , G11C11/15 , H01F10/00 , H01F10/08 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3967 , H01L43/08 , G11B2005/3996 , G11B5/488
摘要： A spin valve GMR element comprises a pair of magnetic biasing films disposed with a predetermined gap and a spin valve GMR film disposed in such a manner that at least both edge portions thereof are stacked on the pair of magnetic biasing films. The spin valve GMR film has a free layer containing a magnetic layer large in its saturation magnetization such as a Co containing magnetic layer. The magnetic biasing film has a laminate film composed of a high saturation magnetization magnetic layer and a magnetic hard layer. The high saturation magnetization layer, for a saturation magnetization Ms.sup.free of a free layer and a saturation magnetization of Ms.sup.hard of a magnetic hard layer, has a saturation magnetization Ms.sup.high satisfying at least one of Ms.sup.high .gtoreq.Ms.sup.free and Ms.sup.high .gtoreq.Ms.sup.hard. According to such a bias structure, when a spin valve GMR element of an over laid structure is narrowed in its track, Barkhausen noise can be effectively suppressed from occurring.
摘要翻译： 自旋阀GMR元件包括以预定间隙设置的一对磁偏置膜和以至少两个边缘部分堆叠在一对磁偏置膜上的方式设置的自旋阀GMR膜。 自旋阀GMR膜具有包含其饱和磁化强度大的含有Co的磁性层的磁性层的自由层。 磁偏置膜具有由高饱和磁化磁化层和磁性硬质层构成的层叠膜。 高饱和磁化层，对于磁性硬层的自由层的饱和磁化强度Msfree和Mshard的饱和磁化强度，具有满足Mshigh> / = Msfree和Mshigh> / = Mshard中的至少一个的饱和磁化强度Mshigh。 根据这种偏压结构，当过度铺设结构的自旋阀GMR元件在其轨道上变窄时，可以有效地抑制巴克豪森噪声的发生。
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2.发明申请Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 有权磁阻效应元件，磁头，磁头组件，磁存储系统公开(公告)号：US20050030676A1
公开(公告)日：2005-02-10
申请号：US10937652
申请日：2004-09-10
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
摘要翻译： 公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。 在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。 在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁层相邻设置的非磁性高导电性层 第一铁磁层与非磁性间隔层接触。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。
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3.发明授权Magnetoresistance effect device having a bi-crystal structure composed of main grains each having a plurality of sub-grains 有权具有由具有多个亚晶粒的主晶粒组成的双晶结构的磁阻效应器件公开(公告)号：US07336454B2
公开(公告)日：2008-02-26
申请号：US11417195
申请日：2006-05-04
申请人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
发明人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y25/00 , H01F10/132 , H01F10/16 , H01F10/3281 , H01L43/08
摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.
摘要翻译： 含有Co作为结构元件的硬磁性膜的基膜具有形成在基板的主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层） 并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。 在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。 利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。 对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。 含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。
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4.发明授权Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 有权磁阻效应元件，磁头，磁头组件，磁存储系统公开(公告)号：US07248448B2
公开(公告)日：2007-07-24
申请号：US10937652
申请日：2004-09-10
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B5/39
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
摘要翻译： 公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。 在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。 在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁性层附近设置的非磁性高导电性层 第一铁磁层与非磁性间隔层接触。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。
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5.发明授权公开(公告)号：US07116527B1
公开(公告)日：2006-10-03
申请号：US08940020
申请日：1997-09-29
申请人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
发明人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y25/00 , H01F10/132 , H01F10/16 , H01F10/3281 , H01L43/08
摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.
摘要翻译： 含有Co作为结构元件的硬磁性膜的基膜具有形成在基板的主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层） 并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。 在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。 利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。 对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。 含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。
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6.发明授权Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 失效磁阻效应元件，磁头，磁头组件，磁存储系统公开(公告)号：US07008702B2
公开(公告)日：2006-03-07
申请号：US09973235
申请日：2001-10-10
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： A magnetoresistance effect element includes a nonmagnetic spacer layer, first and second ferromagnetic layer separated by the nonmagnetic spacer layer, and a nonmagnetic conductivity layer. The first ferromagnetic layer has a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field. The second ferromagnetic layer has first and second ferromagnetic films antiferromagnetically coupled to one another and an antiferromagnetically coupling film located between and in contact with the first and second ferromagnetic films. The magnetization of the first ferromagnetic layer freely rotates in a magnetic field signal. The nonmagnetic conductivity layer is disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic high-conductivity layer and the nonmagnetic spacer layer. The first ferromagnetic layer has a film thickness between 0.5 nanometers and 4.5 nanometers.
摘要翻译： 磁阻效应元件包括非磁性间隔层，由非磁性间隔层隔开的第一和第二铁磁层和非磁性导电层。 第一铁磁层在零施加磁场下具有相对于第二铁磁层的磁化方向成一定角度的磁化方向。 第二铁磁层具有彼此反铁磁耦合的第一和第二铁磁膜和位于第一和第二铁磁膜之间并与其接触的反铁磁耦合膜。 第一铁磁层的磁化在磁场信号中自由旋转。 非磁性导电层设置成与第一铁磁层接触，使得第一铁磁层设置在非磁性高导电层和非磁性间隔层之间。 第一铁磁层的膜厚度在0.5纳米到4.5纳米之间。
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公开(公告)号：US06816347B2
公开(公告)日：2004-11-09
申请号：US09749522
申请日：2000-12-28
IPC分类号： G11B539
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G11B5/00 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01F10/3272 , H01F41/325 , H01L43/08
摘要： A first layer region of a magnetically pinned layer in a spin valve structure, which is relatively remoter from a non-magnetic intermediate layer, is made of a ferromagnetic material containing at least one element selected from the group consisting of Cr (chrome), Rh (rhodium), Os (osmium), Re (rhenium), Si (silicon), Al (aluminum), Be (beryllium), Ga (gallium), Ge (germanium), Te (tellurium), B (boron), V (vanadium), Ru (ruthenium), Ir (iridium), W (tungsten), Mo (molybdenum), Au (gold), Pt (platinum), Ag (silver) and Cu (copper). Thereby, it is possible to provide a structure of the magnetically pinned layer, which can be readily made using a conventional deposition method and can ensure a sufficient electron reflecting effect on the part of the magnetically pinned layer, and to provide a magnetoresistive element using a spin valve film including the particular structure.
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公开(公告)号：US6118624A
公开(公告)日：2000-09-12
申请号：US69163
申请日：1998-04-29
IPC分类号： G11B5/012 , G11B5/31 , G11B5/39 , G11C11/15 , H01F10/08 , H01F10/30 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/3268 , H01L43/08 , G11B2005/3996 , G11B5/012 , G11B5/3113 , G11B5/3954 , H01F10/3295
摘要： A spin valve GMR element comprises a spin valve GMR film stacked in turn a pinned layer, a non-magnetic layer, and a free layer of which magnetization direction varies according to an external magnetic field, and a magnetic biasing film providing a bias magnetic field to the free layer. A spin valve GMR film can be a dual element type. A magnetic biasing film has a stacked film of a high saturation magnetization magnetic layer and a hard magnetic layer. The high saturation magnetization magnetic layer has saturation magnetization Ms.sup.high which, when saturation magnetization of the free layer is Ms.sup.free and saturation magnetization of the hard magnetic layer is Ms.sup.hard, satisfies at least one of Ms.sup.high .gtoreq.Ms.sup.free or Ms.sup.high .gtoreq.Ms.sup.hard. In a spin valve GMR head of a reversed structure or a dual element type, even when a track width is narrowed, occurrence of Barkhausen noise can be effectively suppressed.
摘要翻译： 自旋阀GMR元件包括依次堆叠钉扎层，非磁性层和磁化方向根据外部磁场而变化的自由层的自旋阀GMR膜，以及提供偏置磁场的磁偏置膜 到自由层。 自旋阀GMR膜可以是双重元件型。 磁偏置膜具有高饱和磁化磁化层和硬磁性层的叠层膜。 高饱和磁化磁化层具有饱和磁化强度Mshigh，当自由层的饱和磁化强度为Msfree且硬磁层的饱和磁化强度为Mshard时，满足Mshigh> / = Msfree或Mshigh> / = Mshard中的至少一个。 在反转结构或双元件型的自旋阀GMR头中，即使轨道宽度变窄，也能够有效地抑制巴克豪森噪声的发生。
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公开(公告)号：US6111729A
公开(公告)日：2000-08-29
申请号：US313767
申请日：1999-05-18
申请人： Yuzo Kamiguchi , Akiko Saito , Kazuhiro Saito , Hideaki Fukuzawa , Hitoshi Iwasaki , Masashi Sahashi
发明人： Yuzo Kamiguchi , Akiko Saito , Kazuhiro Saito , Hideaki Fukuzawa , Hitoshi Iwasaki , Masashi Sahashi
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , H01F10/3268 , H01L43/08 , G11B2005/3996 , G11B5/00 , G11B5/3967
摘要： A magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer formed on a metallic buffer layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the metallic buffer layer and the first magnetic layer. Or a magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer composed of a laminated film of a magnetic undercoat layer and a ferromagnetic layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the middle non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the magnetic undercoat layer and the ferromagnetic layer.
摘要翻译： 设置有由形成在金属缓冲层上的第一磁性层，形成在第一磁性层上的中间非磁性层和形成在非磁性层上的第二磁性层构成的自旋阀膜的磁阻效应元件具有 在金属缓冲层和第一磁性层之间的界面形成平均厚度为2nm以下的原子扩散阻挡层。 或设置有由由磁性底涂层和铁磁层的层叠膜构成的第一磁性层，形成在第一磁性层上的中间非磁性层和第二磁性层构成的自旋阀膜的磁阻效应元件 在中间非磁性层上形成的平均厚度为2nm以下的原子扩散阻挡层形成在磁性底涂层和铁磁层之间的界面中。
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10.发明申请公开(公告)号：US20060198063A1
公开(公告)日：2006-09-07
申请号：US11417195
申请日：2006-05-04
申请人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
发明人： Hideaki Fukuzawa , Shin-ichi Nakamura , Yuzo Kamiguchi , Hitoshi Iwasaki , Akio Hori , Susumu Hashimoto
CPC分类号： G11B5/3932 , B82Y25/00 , H01F10/132 , H01F10/16 , H01F10/3281 , H01L43/08
摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.
摘要翻译： 含有Co作为结构元件的硬磁性膜的基膜具有形成在基板主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层） 并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。 在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。 利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。 对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。 含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。
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