公开(公告)号：US20060238457A1

公开(公告)日：2006-10-26

申请号：US11456523

申请日：2006-07-10

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: G09G3/22 ,  G09G3/20

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J2201/30426

Abstract: Some embodiments of the invention include structures and methods for a field emitter display device with a coating and an implantation layer underneath a surface of the emitter. Other embodiments are described and claimed.

Abstract translation: 本发明的一些实施例包括用于在发射器的表面下方具有涂层和注入层的场发射器显示装置的结构和方法。 描述和要求保护其他实施例。

公开(公告)号：US07105997B1

公开(公告)日：2006-09-12

申请号：US09387164

申请日：1999-08-31

Applicant: Yongjun Hu

Inventor： Yongjun Hu

IPC: H01J1/30 ,  H01J9/00

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J2201/30426

Abstract: Structures and methods to ease electron emission and limit outgassing so as to inhibit degradation to the electron beam of a field emitter device are described. In one method to ease such electron emission, a layer of low relative dielectric constant material is formed under the surface of the field emitter tip. Another method is to coat the field emitter tip with a low relative dielectric constant substance or compound to form a layer and then cover that layer with a thin layer of the material of the field emitter tip.

Abstract translation: 描述了用于缓和电子发射和限制放气以便抑制场发射器件的电子束劣化的结构和方法。 在一种简化这种电子发射的方法中，在场致发射极尖端的表面下形成一层低相对介电常数材料。 另一种方法是用低相对介电常数物质或化合物涂覆场发射器尖端以形成层，然后用场发射器尖端的材料的薄层覆盖该层。

公开(公告)号：US06972513B2

公开(公告)日：2005-12-06

申请号：US10332969

申请日：2001-07-16

Applicant: Tetsuya Shiratori ,  Koji Akiyama ,  Hideo Kurokawa

Inventor： Tetsuya Shiratori ,  Koji Akiyama ,  Hideo Kurokawa

IPC: H01J9/02 ,  H01J1/304 ,  H01J29/04 ,  H01J31/12

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30469

Abstract: An object of the present invention is to provide electron emission devices having improved electron convergence.To this end, an electron emission device of the present invention is such that a cathode electrode, an insulating layer, and a gate electrode are layered on a substrate in an order; an electron emission layer is in a first hole on the substrate penetrating from the gate electrode through the cathode electrode; an upper surface of the electron emission layer is between an upper surface of the substrate and a boundary between the cathode electrode and the insulating layer; at least one of a side surface and a lower surface except for a central area of the electron emission layer contacts the cathode electrode.By such an electron emission device, electrons are emitted mainly from the peripheral area of the electron emission layer. Accordingly, the electron convergence is improved.

Abstract translation: 本发明的目的是提供具有改善的电子会聚的电子发射装置。 为此，本发明的电子发射器件使得阴极电极，绝缘层和栅极电极按顺序层叠在基板上; 电子发射层位于衬底上的第一个孔中，从栅电极穿过阴极电极; 电子发射层的上表面在衬底的上表面和阴极和绝缘层之间的边界之间; 除了电子发射层的中心区域之外的侧表面和下表面中的至少一个与阴极接触。 通过这样的电子发射装置，电子主要从电子发射层的周边区域发射。 因此，提高了电子会聚。

公开(公告)号：US20040104658A1

公开(公告)日：2004-06-03

申请号：US10719214

申请日：2003-11-20

Applicant: Micron Technology, Inc.

Inventor： Behnam Moradi ,  Tian Zhang ,  John Lee

IPC: H01J001/00

CPC classification number: H01J1/3044 ,  H01J2201/30426 ,  H01J2201/30446 ,  H01J2329/00

Abstract: A structure and method are provided to inhibit degradation to the electron beam of a field emitter device by coating the field emitter tip with a substance or a compound. The substance or compound acts in the presence of outgassing to inhibit such degradation. In one embodiment, the substance or compound coating the field emitter tip is stable in the presence of outgassing. In another embodiment, the substance or compound decomposes at least one matter in the outgassing. In yet another embodiment, the substance or compound neutralizes at least one matter in the outgassing. In a further embodiment, the substance or compound brings about a catalysis in the presence of outgassing.

公开(公告)号：US06629869B1

公开(公告)日：2003-10-07

申请号：US08474277

申请日：1995-06-07

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: H01J902

CPC classification number: H01J1/316 ,  G09G3/22 ,  H01J1/304 ,  H01J1/3042 ,  H01J9/027 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864 ,  Y10S977/891

Abstract: A field emission cathode is provided which includes a substrate and a conductive layer desposed adjacent the substrate. An electrically resistive pillar is disposed adjacent the conductive layer, the resistive pillar having a substantially flat surface spaced from and substantially parallel to the substrate. A layer of diamond is disposed adjacent the surface of the resistive pillar.

Abstract translation: 提供场发射阴极，其包括衬底和邻近衬底设置的导电层。 电阻柱设置在导电层附近，电阻柱具有与衬底间隔开并基本上平行于衬底的基本平坦的表面。 金刚石层邻近电阻柱的表面设置。

公开(公告)号：US6066507A

公开(公告)日：2000-05-23

申请号：US949931

申请日：1997-10-14

Applicant: J. Brett Rolfson ,  Kevin Tjaden ,  Trung T. Doan ,  Tyler A. Lowery ,  David A. Cathey

Inventor： J. Brett Rolfson ,  Kevin Tjaden ,  Trung T. Doan ,  Tyler A. Lowery ,  David A. Cathey

IPC: H01J9/02 ,  H01L21/3105 ,  H01L21/00

CPC classification number: H01L21/31053 ,  H01J9/025 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226

Abstract: A field emitter display having reduced surface leakage comprising at least one emitter tip surrounded by a dielectric region. The dielectric region is formed of a composite of insulative layers, at least one of which has fins extending toward the emitter tip. A conductive gate, for extracting electrons from the emitter tip, is disposed superjacent the dielectric region. The fins increase the length of the path that leaked electrical charge travels before impacting the gate.

Abstract translation: 具有减小的表面泄漏的场发射器显示器包括由电介质区域包围的至少一个发射极尖端。 电介质区域由绝缘层的复合体形成，其中至少一个具有朝向发射极尖端延伸的翅片。 用于从发射极尖端提取电子的导电栅极设置在电介质区域的上方。 在撞击门之前，翅片增加了泄漏电荷行进路径的长度。

公开(公告)号：US5939833A

公开(公告)日：1999-08-17

申请号：US951177

申请日：1997-10-15

Applicant: Yoon-Ho Song ,  Jin-Ho Lee ,  Kyoung-Ik Cho ,  Hyung-Joun Yoo

Inventor： Yoon-Ho Song ,  Jin-Ho Lee ,  Kyoung-Ik Cho ,  Hyung-Joun Yoo

IPC: H01J29/96 ,  G09F9/30 ,  G09G3/20 ,  G09G3/22 ,  H01J1/30 ,  H01J29/04 ,  H01J31/12 ,  H04N9/12 ,  G09G3/10

CPC classification number: G09G3/22 ,  H01J31/127 ,  G09G2300/08 ,  G09G3/2014 ,  H01J2201/30426 ,  H01J2201/319

Abstract: The present invention relates to a field emission display which applies a field emission device (or field emitter) to a flat panel display. The field emission display in accordance with the present invention has the lower plate in which the pixel array and the scan and data driving circuits are integrated one insulating substrate, therefore, it is possible to implement a field emission display capable of providing a high quality picture in a low price. The voltage is applied to the scan and data driving circuits may considerably decrease through the tin film transistor attached to each pixel. The field emission characteristics are stabilized by the resistor attached to the field emission device so that reliable field emission display may be fabricated. Further, since all the processes are carried out at a low temperature, a glass, which is low in price and has a large area, may be used as an insulating substrate.

Abstract translation: 本发明涉及将场致发射器件（或场发射极）施加到平板显示器上的场发射显示器。 根据本发明的场发射显示器具有其中像素阵列和扫描和数据驱动电路集成在一个绝缘基板上的下板，因此，可以实现能够提供高质量图像的场致发射显示 价格低廉。 电压被施加到扫描，并且数据驱动电路可以通过连接到每个像素的锡膜晶体管显着地减小。 场发射特性通过附着在场发射器件上的电阻来稳定，从而可以制造可靠的场发射显示。 此外，由于所有的工艺都是在低温下进行的，所以价格低廉且面积大的玻璃可以用作绝缘基板。

公开(公告)号：US5897790A

公开(公告)日：1999-04-27

申请号：US995839

申请日：1997-12-22

Applicant: Keisuke Koga ,  Yoshikazu Hori ,  Takehito Yoshida ,  Yuka Yamada

Inventor： Keisuke Koga ,  Yoshikazu Hori ,  Takehito Yoshida ,  Yuka Yamada

IPC: H01J9/02 ,  B44C1/22

CPC classification number: H01J9/025 ,  H01J2201/30426

Abstract: A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.

Abstract translation: 引出电极形成在硅衬底上，介于上和下氧化硅膜之间，每个氧化硅膜具有对应于其中将形成阴极的区域的圆形开口。 在上下氧化硅膜和引出电极的各个开口中形成塔状阴极。 每个阴极具有通过晶体各向异性蚀刻和硅的热氧化工艺形成的具有2nm或更小半径的尖锐尖端部分。 暴露在上，下氧化硅膜和阴极的开口中的硅衬底的区域的表面涂覆有由具有低功函数的材料制成的薄表面涂膜。

公开(公告)号：US5814924A

公开(公告)日：1998-09-29

申请号：US457177

申请日：1995-06-01

Applicant: Hiroshi Komatsu

Inventor： Hiroshi Komatsu

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J21/10 ,  H01L23/544 ,  H03F3/00

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J21/105 ,  H01J3/022 ,  H01J9/025 ,  H01L23/544 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226 ,  H01L2223/54473 ,  H01L2924/0002

Abstract: A display including plural field emission devices arranged in a pixel matrix. Each of these field emission devices includes an opening in an insulating layer of a supporting substrate, an upwardly extending cathode having a tip disposed centrally within the opening, and a gate electrode disposed circumferentially about the rim of the opening aligned substantially concentric to the cathode tip. Also, thin film transistor transmission gates are disposed proximate to each of the field emission devices and are selectively operable to control transmission of data signals to the gate electrode of the field emission devices to which they are adjacent.

Abstract translation: 包括以像素矩阵排列的多个场发射器件的显示器。 这些场致发射器件中的每一个包括在支撑衬底的绝缘层中的开口，具有设置在开口内部中心的尖端的向上延伸的阴极和围绕开口的边缘周向设置的栅极，该栅电极基本上与阴极尖端同心对准 。 此外，薄膜晶体管传输门靠近每个场发射器件设置，并且可选择性地操作以控制数据信号传输到与它们相邻的场发射器件的栅电极。

公开(公告)号：US5793154A

公开(公告)日：1998-08-11

申请号：US481068

申请日：1995-06-07

Applicant: Shigeo Itoh ,  Teruo Watanabe ,  Makoto Miyamori ,  Norio Nishimura ,  Junji Itoh ,  Seigo Kanemaru

Inventor： Shigeo Itoh ,  Teruo Watanabe ,  Makoto Miyamori ,  Norio Nishimura ,  Junji Itoh ,  Seigo Kanemaru

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J21/10 ,  H01J1/30

CPC classification number: H01J21/105 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30426

Abstract: A field emission element including a gate and an emitter and capable of penting any of the element oxide layer from being formed on a tip of the emitter to prevent a decrease in emission current, unstable operation and an increase in noise. The gate has a surface formed of a material of oxygen bonding strength higher than that of a material for at least a tip surface of the emitter, so that oxygen atoms and molecules containing oxygen entering the gate may be captured by adsorption on the gate to prevent formation of any oxide layer on the emitter. When a portion of the emitter other than the tip surface is formed of a material of oxygen bonding strength higher than that of the material for the tip surface, formation of any oxide layer on the tip surface of the emitter is minimized.