公开(公告)号：US20240266240A1

公开(公告)日：2024-08-08

申请号：US18640076

申请日：2024-04-19

申请人： Murata Manufacturing Co., Ltd.

发明人： Akio KATSUBE ,  Hideki SHINKAI

IPC分类号： H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L23/544 ,  H01L23/552 ,  H01L25/065 ,  H01L25/16 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02 ,  H03H9/05 ,  H03H9/08 ,  H03H9/10

CPC分类号： H01L23/3185 ,  H01L21/561 ,  H01L23/552 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02086 ,  H03H9/02913 ,  H03H9/0523 ,  H03H9/0542 ,  H03H9/059 ,  H03H9/08 ,  H03H9/1042 ,  H03H9/1085 ,  H01L23/544 ,  H01L24/16 ,  H01L25/0655 ,  H01L25/16 ,  H01L2223/54486 ,  H01L2224/16227

摘要： A module includes a substrate, a first component, and a sealing resin. The substrate is provided with a first surface. The first component is mounted on the first surface. The first component is sealed with the sealing resin at least from a lateral side. The first component includes a projecting portion. The projecting portion projects from the sealing resin on a side opposite to a side of the substrate.

公开(公告)号：US20240258987A1

公开(公告)日：2024-08-01

申请号：US18611883

申请日：2024-03-21

申请人： Murata Manufacturing Co., Ltd.

发明人： Takashi YAMANE

IPC分类号： H03H9/05 ,  H03H9/17

CPC分类号： H03H9/0523 ,  H03H9/173

摘要： An acoustic wave device includes a mounting substrate; an acoustic wave element on one major surface of the mounting substrate in its thickness direction, and a bump between the acoustic wave element and the mounting substrate. The acoustic wave element includes a support substrate including an air gap, a piezoelectric layer stacked on the support substrate and including an overlap region at least partially overlapping the air gap as viewed in the stacking direction, and a functional electrode located in the overlap region of the piezoelectric layer. The mounting substrate includes a metal portion. A fixed capacitance generated between the acoustic wave element and the mounting substrate is not less than a variable capacitance generated between the acoustic wave element and the mounting substrate.

公开(公告)号：US20240235521A1

公开(公告)日：2024-07-11

申请号：US18611815

申请日：2024-03-21

申请人： Murata Manufacturing Co., Ltd.

发明人： Takashi YAMANE ,  Kazunori INOUE

IPC分类号： H03H9/10 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/13 ,  H03H9/17

CPC分类号： H03H9/105 ,  H03H3/02 ,  H03H9/02031 ,  H03H9/02157 ,  H03H9/02228 ,  H03H9/0523 ,  H03H9/132 ,  H03H9/173 ,  H03H9/176 ,  H03H2003/021

摘要： An acoustic wave device includes an acoustic wave element including a support including a support substrate having a thickness in a first direction, a piezoelectric layer laminated on the support portion and including a first main surface and a second main surface opposite to the first main surface in the first direction, and a functional electrode on at least one of the first main surface and the second main surface of the piezoelectric layer, and a package to house the acoustic wave element. The support portion includes a first space on a piezoelectric layer side at a position where the first space at least partially overlaps the functional electrode in a plan view in the first direction, the package includes a second space outside the first space, and the piezoelectric layer includes a through-hole communicating with the first space and the second space.

公开(公告)号：US20240204746A1

公开(公告)日：2024-06-20

申请号：US18422383

申请日：2024-01-25

申请人： Shenzhen Newsonic Technologies Co., Ltd.

发明人： Weiwei HU ,  Jie ZOU ,  Gongbin TANG

IPC分类号： H03H9/10 ,  H03H3/02 ,  H03H9/05 ,  H03H9/17

CPC分类号： H03H9/105 ,  H03H3/02 ,  H03H9/0523 ,  H03H9/173 ,  H03H2003/021

摘要： A bulk acoustic wave resonator and method for manufacturing the same, the bulk acoustic wave resonator includes: a piezoelectric layer; a first electrode layer, a carrier structure, and first and second conductive connectors disposed on a first side of the piezoelectric layer, and a second electrode layer, an interconnection pad and a cover structure disposed on a second side of the piezoelectric layer, wherein the first electrode layer includes a first electrode and an additional electrode electrically isolated from each other; the second electrode layer includes a second electrode; the interconnection pad is electrically connected to the second electrode and the additional electrode; a first cavity is disposed between the carrier structure and the piezoelectric layer; the first conductive connector is electrically connected to the first electrode, the second conductive connector is electrically connected to the second electrode through the additional electrode and the interconnection pad.

公开(公告)号：US11683020B2

公开(公告)日：2023-06-20

申请号：US17718799

申请日：2022-04-12

申请人： Shenzhen Newsonic Technologies Co., Ltd.

发明人： Jian Wang

IPC分类号： H03H9/10 ,  H03H3/02 ,  H03H9/05

CPC分类号： H03H9/1042 ,  H03H3/02 ,  H03H9/0523

摘要： A method for packaging chips includes: flip-chip bonding a plurality of filter chips to be packaged on a substrate to be packaged; applying a first mold material layer on the filter chips to be packaged; applying a second mold material layer on a side of the first mold material layer away from the filter chip to be packaged, the first mold material layer and the second mold material layer forming a first mold layer; thinning the first mold material layer and the second mold material layer to expose substrates of the filter chips to be packaged, and thinning the substrates of the filter chips to be packaged to a preset thickness; applying a second mold layer on the exposed substrates of the filter chips to be packaged to obtain a mold structure; and cutting the mold structure into a plurality of particle chips.

公开(公告)号：US11646719B2

公开(公告)日：2023-05-09

申请号：US17886149

申请日：2022-08-11

申请人： AKOUSTIS, INC.

发明人： Jeffrey B. Shealy ,  Michael Hodge ,  Rohan W. Houlden ,  Shawn R. Gibb ,  Mary Winters ,  Ramakrishna Vetury ,  David M. Aichele

IPC分类号： H03H9/70 ,  H03H9/02 ,  H03H9/205 ,  H03H9/58 ,  H03H9/60 ,  H03H9/54 ,  H03H3/02 ,  H03H9/00 ,  H03H9/05

CPC分类号： H03H9/703 ,  H03H3/02 ,  H03H9/0095 ,  H03H9/02031 ,  H03H9/02118 ,  H03H9/205 ,  H03H9/542 ,  H03H9/581 ,  H03H9/605 ,  H03H9/0523 ,  H03H9/0533 ,  H03H2003/023 ,  H03H2003/025

摘要： An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

公开(公告)号：US11646710B2

公开(公告)日：2023-05-09

申请号：US17865092

申请日：2022-07-14

申请人： Akoustis, Inc.

发明人： Dae Ho Kim ,  Mary Winters ,  Ramakrishna Vetury ,  Jeffrey B. Shealy

IPC分类号： H03H3/02 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H03H9/02 ,  H03H9/05

CPC分类号： H03H3/02 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/10513 ,  H10N30/85 ,  H10N30/875 ,  H10N30/877 ,  H10N30/88 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

摘要： A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer. A filter device or filter system includes at least one BAW resonator. Related methods of fabrication include forming the BAW resonator.

公开(公告)号：US20180309422A1

公开(公告)日：2018-10-25

申请号：US16019267

申请日：2018-06-26

申请人： Akoustis, Inc.

发明人： Jeffrey B. SHEALY ,  Michael HODGE ,  Rohan W. HOULDEN ,  Shawn R. GIBB ,  Mary WINTERS ,  Ramakrishna VETURY ,  David AICHELE

IPC分类号： H03H3/02 ,  H03H9/00 ,  H03H9/02 ,  H03H9/05 ,  H03H9/10 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56 ,  H01L41/187 ,  H01L41/047 ,  H01L27/20 ,  H01L41/29 ,  H01L41/332

CPC分类号： H03H3/02 ,  H01L27/20 ,  H01L41/0475 ,  H01L41/0477 ,  H01L41/187 ,  H01L41/29 ,  H01L41/332 ,  H03H9/0095 ,  H03H9/02031 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/0533 ,  H03H9/1014 ,  H03H9/105 ,  H03H9/173 ,  H03H9/175 ,  H03H9/205 ,  H03H9/542 ,  H03H9/562 ,  H03H9/564 ,  H03H2003/021 ,  H03H2003/025

摘要： An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US20180275485A1

公开(公告)日：2018-09-27

申请号：US15679879

申请日：2017-08-17

申请人： Dror Hurwitz

发明人： Dror Hurwitz

IPC分类号： G02F1/35 ,  G02F1/39 ,  H03H9/56 ,  H03H9/02 ,  H03H3/02 ,  H01S3/00 ,  H03B17/00

CPC分类号： G02F1/353 ,  G02F1/39 ,  H01S3/0092 ,  H03B17/00 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/02228 ,  H03H9/0523 ,  H03H9/1014 ,  H03H9/562 ,  H03H9/587 ,  H03H9/588 ,  H03H9/605 ,  H03H2003/021 ,  H03H2003/023 ,  H04B2210/006

摘要： 1. A method of fabricating an RF filter comprising an array of resonators comprising the steps of: Obtaining a removable carrier with release layer; Growing a piezoelectric film on a removable carrier; Applying a first electrode to the piezoelectric film; Obtaining a backing membrane on a cover, with or without prefabricated cavities between the backing film and cover; Attaching the backing membrane to the first electrode; Detaching the removable carrier; Measuring and trimming the piezoelectric film as necessary; Selectively etching away the piezoelectric layer to fabricate discrete resonator islands; Etching down through coatings and backing membrane to a silicon dioxide layer between the backing membrane and the cover to form trenches; Applying a passivation layer into the trenches and around the piezoelectric islands; Depositing a second electrode layer over the piezoelectric film islands and surrounding passivation layer; Applying connections for subsequent electrical coupling to an interposer; Selectively removing second electrode material leaving coupled resonator arrays; Creating a gasket around perimeter of the resonator array; Thinning down cover to desired thickness; Optionally fabricating upper cavities between the backing membrane and cover by drilling holes through the cover and then selectively etching away the silicon dioxide; Dicing the wafer into flip chip single unit filter arrays; Obtaining an interposer; Optionally applying a dam to the interposer surface to halt overfill flow; Coupling the flip chip single unit filter array to pads of the interposer by reflow of the solder cap; Encapsulating with polymer underfill/overfill; and Singulating into separate filter modules, wherein wherein the piezoelectric layer comprises a mixed AlN single crystal layer a c-axis orientation.

公开(公告)号：US20180167054A1

公开(公告)日：2018-06-14

申请号：US15379392

申请日：2016-12-14

申请人： QUALCOMM Incorporated

发明人： David Francis BERDY ,  Changhan Hobie YUN ,  Shiqun GU ,  Niranjan Sunil MUDAKATTE ,  Mario Francisco VELEZ ,  Chengjie ZUO ,  Jonghae KIM

IPC分类号： H03H9/64 ,  H03H3/08 ,  H03H9/72

CPC分类号： H03H9/64 ,  H03H3/08 ,  H03H9/0523 ,  H03H9/0547 ,  H03H9/0561 ,  H03H9/059 ,  H03H9/72

摘要： An integrated radio frequency (RF) circuit combines complementary features of passive devices and acoustic filters and includes a first die, a second die, and a third die. The first die includes a substrate having one or more passive devices. The second die includes a first acoustic filter. The second die is stacked and coupled to a first surface of the first die. The third die includes a second acoustic filter. The third die is stacked and coupled to a second surface opposite the first surface of the first die.