BORON-10 ENHANCED THERMAL ENERGY
    43.
    发明申请
    BORON-10 ENHANCED THERMAL ENERGY 审中-公开
    BORON-10增强热能

    公开(公告)号:US20110268235A1

    公开(公告)日:2011-11-03

    申请号:US12769650

    申请日:2010-04-29

    申请人: Michael Gurin

    发明人: Michael Gurin

    摘要: The present invention generally relates to high-energy composition utilized with reactors and combustors for generating electricity either directly through nuclear or magnetic energy, or indirectly through thermal energy that incorporate the high-energy composition into at least one reactor operable at a temperature greater than 1000 Celsius and containing the composition with at least one co-reactant of Boron-10, with the Boron-10 specifically enabling an at least five percent increase of energy generation and/or efficiency as compared the same reaction without Boron-10. In one embodiment, the present invention relates to the Boron-10 composition within a high-energy reactor operable at a temperature at least 1000 Celsius and a method that applies at least one externally applied force acting upon the Boron-10 portion of the reactor.

    摘要翻译: 本发明一般涉及用于反应器和燃烧器的高能组合物,用于直接通过核或磁能产生电力,或间接通过将高能组合物并入至少一个可在大于1000℃的温度下操作的反应器的热能 并且含有至少一种硼-10共反应物的组合物,与硼-10相同的反应相比,Boron-10特别能使能量产生和/或效率提高至少5%。 在一个实施方案中,本发明涉及在至少1000摄氏度的温度下操作的高能反应器中的硼-10组合物,以及施加作用在反应器的硼-10部分上的至少一个外部施加的力的方法。

    METHOD FOR PURIFYING ELEMENTAL BORON
    44.
    发明申请
    METHOD FOR PURIFYING ELEMENTAL BORON 有权
    净化元宝的方法

    公开(公告)号:US20110176983A1

    公开(公告)日:2011-07-21

    申请号:US13061953

    申请日:2009-08-28

    IPC分类号: C01B35/02 C01B35/04 B32B5/16

    CPC分类号: C01B35/023 Y10T428/2982

    摘要: Elemental boron with a boron content of at least 96.8% by weight, an oxygen content of at most 1.6% by weight, a nitrogen content of at most 0.2% by weight, a crystallinity of 30% by weight or less, and a particle size distribution with a d100 value of 9 μm or less.

    摘要翻译: 元素硼的硼含量至少为96.8重量%,氧含量为1.6重量%以下,氮含量为0.2重量%以下,结晶度为30重量%以下,粒径为 d100值为9μm以下的分布。

    Semi solid TiB2 precursor mixture
    45.
    发明授权
    Semi solid TiB2 precursor mixture 失效
    半固体TiB2前体混合物

    公开(公告)号:US07927518B2

    公开(公告)日:2011-04-19

    申请号:US11933526

    申请日:2007-11-01

    摘要: The invention relates to a metal boride precursor mixture comprising a metal oxide and a boric oxide combined in such a manner so as to produce intimately linked clusters wherein the boric oxide is found within the metal oxide. Furthermore, the invention discloses a carbon composite material made with the metal boride precursor mixture and a carbonaceous component. Finally, the invention also teaches the process for preparing the metal boride precursor mixture comprising steps of providing a metal oxide and a boron oxide, mechanically mixing the metal oxide and the boron oxide at a temperature that liquefies the boron oxide and may impregnate the metal oxide to produce an intimately linked cluster of metal oxide and boric oxide.

    摘要翻译: 本发明涉及包含金属氧化物和氧化硼的金属硼化物前体混合物,其以这样的方式组合以产生紧密连接的簇,其中在氧化物内部存在氧化硼。 此外,本发明公开了一种由金属硼化物前体混合物和碳质成分制成的碳复合材料。 最后,本发明还教导了制备金属硼化物前体混合物的方法,包括以下步骤:提供金属氧化物和氧化硼,在液化氧化硼的温度下机械混合金属氧化物和氧化硼,并可浸渍金属氧化物 以产生紧密连接的金属氧化物和氧化硼簇。

    Growth of boron nanostructures with controlled diameter
    49.
    发明申请
    Growth of boron nanostructures with controlled diameter 有权
    具有受控直径的硼纳米结构的生长

    公开(公告)号:US20050256006A1

    公开(公告)日:2005-11-17

    申请号:US11011504

    申请日:2004-12-13

    摘要: A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.

    摘要翻译: 描述了具有受控直径和受控化学(例如组成,掺杂)以及物理(例如电和超导)性质的硼基纳米结构(例如纳米管和纳米线)的生长方法。 硼纳米结构在具有孔径小于约4nm的孔的金属取代的MCM-41模板上生长,并且可以在纳米结构生长期间或之后掺杂Ia族或IIa族电子给体元件。 基于磁化率测量的初步数据表明掺杂Mg的硼纳米管具有大约100K的超导转变温度。

    Purification of diborane
    50.
    发明授权
    Purification of diborane 失效
    乙硼烷的纯化

    公开(公告)号:US6165434A

    公开(公告)日:2000-12-26

    申请号:US288931

    申请日:1999-04-09

    申请人: Dalbir S. Rajoria

    发明人: Dalbir S. Rajoria

    摘要: BF.sub.3, CO.sub.2 or both are removed from a mixture containing these gases with B.sub.2 H.sub.6 by contacting the mixture with an inorganic hydroxide such as LiOH. B.sub.2 H.sub.6 is synthesized by contacting BF.sub.3 with KBH.sub.4.

    摘要翻译: 通过使混合物与无机氢氧化物如LiOH接触,从含有这些气体的混合物中除去BF 3,CO 2或二者。 通过使BF 3与KBH 4接触来合成B2H6。