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公开(公告)号：US11967655B2
公开(公告)日：2024-04-23
申请号：US16918218
申请日：2020-07-01
发明人： Seung Bum Rim , David D. Smith
IPC分类号： H01L31/0216 , H01L27/142 , H01L31/0224 , H01L31/0443 , H01L31/0745
CPC分类号： H01L31/02167 , H01L27/1421 , H01L31/022441 , H01L31/0443 , H01L31/0745 , Y02E10/50
摘要： A bypass diode can include a first conductive region of a first conductivity type disposed above a substrate of a solar cell and a second conductive region of a second conductivity type disposed above the first conductive region. The bypass diode can include a thin dielectric region disposed directly between the first and second conductive regions.
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公开(公告)号：US20230178677A1
公开(公告)日：2023-06-08
申请号：US18147566
申请日：2022-12-28
IPC分类号： H01L31/107 , H01L31/028 , H01L31/0745 , H01L31/18
CPC分类号： H01L31/107 , H01L31/0284 , H01L31/0745 , H01L31/1812
摘要： The present disclosure relates to a photodiode comprising a first part made of silicon and a second part made of doped germanium lying on and in contact with the first part, the first part comprising a stack of a first area and of a second area forming a p-n junction and the doping level of the germanium increasing as the distance from the p-n junction increases.
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43.发明公开公开(公告)号：US20230163225A1
公开(公告)日：2023-05-25
申请号：US18095769
申请日：2023-01-11
申请人： SunPower Corporation
发明人： Staffan Westerberg , Gabriel Harley
IPC分类号： H01L31/0224 , H01L31/0236 , H01L31/0352 , H01L31/0745
CPC分类号： H01L31/022441 , H01L31/02363 , H01L31/035281 , H01L31/0745 , H01L31/1872
摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.
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公开(公告)号：US11646388B2
公开(公告)日：2023-05-09
申请号：US13616933
申请日：2012-09-14
IPC分类号： H01L31/078 , H01L31/0725 , H01L31/074 , H01L31/0443 , H01L31/0745 , H01L31/0687
CPC分类号： H01L31/078 , H01L31/0443 , H01L31/0687 , H01L31/074 , H01L31/0725 , H01L31/0745 , Y02E10/544 , Y02P70/50
摘要： Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least one layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.
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公开(公告)号：US11621360B2
公开(公告)日：2023-04-04
申请号：US17707429
申请日：2022-03-29
发明人： Shih-Yuan Wang , Shih-Ping Wang
IPC分类号： H01L31/0352 , H01L31/075 , H01L31/105 , H01L31/028 , H01L31/0224 , H01L31/107 , H01L31/02 , H01L31/0236 , G02B6/136 , H01L31/0312 , H01L31/036 , H01L31/077 , H01L31/18 , H01L31/054 , G02B6/122 , H01L23/66 , H01L31/0232 , H01L31/024 , H01L31/0304 , H01L31/0745 , G02B6/12
摘要： Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.
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公开(公告)号：US11616156B2
公开(公告)日：2023-03-28
申请号：US16854489
申请日：2020-04-21
发明人： Nami Yasuoka
IPC分类号： H01L31/052 , H01L31/0525 , H01L31/0745 , H01L31/054 , H01L23/34
摘要： An optical semiconductor element includes an optical receiver including a first semiconductor layer, a heater for heating the first semiconductor layer; and a monitor. A first semiconductor layer that absorbs light and generates electric carriers; a heater for heating the first semiconductor layer; and a monitor including a second semiconductor layer in which dark current is changed by heat generated by the heater.
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公开(公告)号：US20230078624A1
公开(公告)日：2023-03-16
申请号：US17959095
申请日：2022-10-03
发明人： Wonjae CHANG , Sungjin KIM , Juhwa CHEONG , Junyong AHN
IPC分类号： H01L31/0745 , H01L31/0224 , H01L31/18 , H01L31/0288 , H01L31/0216 , H01L31/0236 , H01L31/0368
摘要： Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.
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公开(公告)号：US20230021009A1
公开(公告)日：2023-01-19
申请号：US17870268
申请日：2022-07-21
申请人： SunPower Corporation
发明人： Peter John COUSINS
IPC分类号： H01L31/0224 , H01L31/0745 , H01L31/056 , H01L31/18 , H01L31/068
摘要： A bipolar solar cell includes a backside junction formed by an N-type silicon substrate and a P-type polysilicon emitter formed on the backside of the solar cell. An antireflection layer may be formed on a textured front surface of the silicon substrate. A negative polarity metal contact on the front side of the solar cell makes an electrical connection to the substrate, while a positive polarity metal contact on the backside of the solar cell makes an electrical connection to the polysilicon emitter. An external electrical circuit may be connected to the negative and positive metal contacts to be powered by the solar cell. The positive polarity metal contact may form an infrared reflecting layer with an underlying dielectric layer for increased solar radiation collection.
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公开(公告)号：US11462654B2
公开(公告)日：2022-10-04
申请号：US16504995
申请日：2019-07-08
申请人： LG ELECTRONICS INC.
发明人： Wonjae Chang , Sungjin Kim , Juhwa Cheong , Junyong Ahn
IPC分类号： H01L31/0745 , H01L31/0224 , H01L31/18 , H01L31/0288 , H01L31/0216 , H01L31/0236 , H01L31/0368
摘要： Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.
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公开(公告)号：US20220293802A1
公开(公告)日：2022-09-15
申请号：US17636271
申请日：2020-09-03
发明人： Sang Eon HAN , Sang M. HAN , Seok Jun HAN , Pauls STRADINS
IPC分类号： H01L31/0236 , H01L31/0745
摘要： A flexible, non-flat solar cell comprises a flexible substrate. A pn junction is on or in the flexible substrate. The solar cell has been flexed so as to have a non-flat geometry that results in an increased surface area of the flexed solar cell with respect to the surface area of a flat solar cell that is the same as the flexed solar cell except that the flat solar cell has a flat surface geometry that has the same projected area on a lateral plane as does the flexed solar cell.
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