Apparatus and method for sensing a magnetic field using arrays of magnetic sensing elements

    公开(公告)号:US09702944B2

    公开(公告)日:2017-07-11

    申请号:US14801792

    申请日:2015-07-16

    CPC classification number: G01R33/098 G11C11/1659 G11C11/1673 G11C11/1675

    Abstract: An apparatus includes circuits and a module configured to determine an external magnetic field based on a parameter of each circuit. Each circuit includes an array of magnetic tunnel junctions partitioned into subarrays. The magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel. The subarrays are connected in series. Each magnetic tunnel junction includes a storage layer having a storage magnetization and a sense layer having a sense magnetization. Each magnetic tunnel junction is configured such that the sense magnetization and impedance of each magnetic tunnel junction vary in response to an external magnetic field. The parameter of each circuit varies based on a combined impedance of the multiple magnetic tunnel junctions. The module is implemented in at least one of a memory or a processing device.

    Analog circuits incorporating magnetic logic units
    52.
    发明授权
    Analog circuits incorporating magnetic logic units 有权
    包含磁逻辑单元的模拟电路

    公开(公告)号:US09503097B2

    公开(公告)日:2016-11-22

    申请号:US14606967

    申请日:2015-01-27

    Abstract: A circuit includes a magnetic logic unit including input terminals, output terminals, a field line, and magnetic tunnel junctions (MTJs). The field line electrically connects a first and a second input terminal, and is configured to generate a magnetic field based on an input to at least one of the first and the second input terminal. The input is based on a first analog input to the circuit. Each MTJ is electrically connected to a first and a second output terminal, and is configured such that an output of at least one of the first and the second output terminal varies in response to a combined resistance of the MTJs. The resistance of the MTJs varies based on the magnetic field. The circuit is configured to mix the first analog input and a second analog input to generate an analog output based on the output of the second output terminal.

    Abstract translation: 电路包括包括输入端子,输出端子,场线和磁隧道结(MTJ)的磁逻辑单元。 场线电连接第一和第二输入端子,并且被配置为基于对第一和第二输入端子中的至少一个的输入产生磁场。 输入基于电路的第一个模拟输入。 每个MTJ电连接到第一和第二输出端,并且被配置为使得第一和第二输出端中的至少一个的输出响应于MTJ的组合电阻而变化。 MTJ的电阻根据磁场而变化。 电路被配置为混合第一模拟输入和第二模拟输入以基于第二输出端的输出产生模拟输出。

    Magnetic logic units configured as analog circuit building blocks
    54.
    发明授权
    Magnetic logic units configured as analog circuit building blocks 有权
    配置为模拟电路构建块的磁逻辑单元

    公开(公告)号:US09350359B2

    公开(公告)日:2016-05-24

    申请号:US14606960

    申请日:2015-01-27

    CPC classification number: H03K19/18 G11C11/1659 G11C11/1673 G11C11/1675

    Abstract: A circuit includes a magnetic logic unit including input terminals, output terminals, a field line, and magnetic tunnel junctions (MTJs). The field line electrically connects a first and a second input terminal, and is configured to generate a magnetic field based on an input to at least one of the first and the second input terminal. The input is based on an analog input to the circuit. Each MTJ is electrically connected to a first output terminal and a second output terminal, and is configured such that an output of at least one of the first and the second output terminal varies in response to a combined resistance of the MTJs. The resistance of each of the MTJs varies based on the magnetic field. The circuit is configured to generate an analog output based on the output of at least one of the first and the second output terminal.

    Abstract translation: 电路包括包括输入端子,输出端子,场线和磁隧道结(MTJ)的磁逻辑单元。 场线电连接第一和第二输入端子,并且被配置为基于对第一和第二输入端子中的至少一个的输入产生磁场。 输入是基于电路的模拟输入。 每个MTJ电连接到第一输出端和第二输出端,并且被配置为使得第一和第二输出端中的至少一个的输出响应于MTJ的组合电阻而变化。 每个MTJ的电阻根据磁场而变化。 电路被配置为基于第一和第二输出端子中的至少一个的输出来产生模拟输出。

    Apparatus and Method for Magnetic Sensor Based Surface Shape Analysis Spatial Positioning in a Uniform Magnetic Field
    55.
    发明申请
    Apparatus and Method for Magnetic Sensor Based Surface Shape Analysis Spatial Positioning in a Uniform Magnetic Field 有权
    基于磁传感器的表面形状分析的装置和方法在均匀磁场中的空间定位

    公开(公告)号:US20160097630A1

    公开(公告)日:2016-04-07

    申请号:US14863121

    申请日:2015-09-23

    CPC classification number: G01B7/24 G01B7/003 G01B7/28 G01R33/02

    Abstract: A device has a flexible substrate supporting an array of magnetic sensors exposed to a uniform external magnetic field. One or more controllers receive magnetic sensor signals from the magnetic sensors. The one or more controllers collect reference magnetic sensor signals when the flexible substrate is aligned with the uniform external magnetic field. The one or more controllers collect first polarity magnetic sensor signals in response to deformation of the flexible substrate in a first direction. The one or more controllers collect second polarity magnetic sensor signals in response to deformation of the flexible substrate in a second direction. The magnetic sensor signals establish a profile of the orientation of the flexible substrate with respect to the uniform external magnetic field.

    Abstract translation: 器件具有支撑暴露于均匀外部磁场的磁性传感器阵列的柔性基板。 一个或多个控制器从磁传感器接收磁传感器信号。 当柔性基板与均匀的外部磁场对准时,一个或多个控制器收集参考磁传感器信号。 一个或多个控制器响应于柔性基板在第一方向上的变形而收集第一极性磁传感器信号。 一个或多个控制器响应于柔性基板在第二方向上的变形而收集第二极性磁传感器信号。 磁传感器信号相对于均匀的外部磁场建立柔性基板的取向的轮廓。

    Apparatus, system, and method for matching patterns with an ultra fast check engine based on flash cells
    57.
    发明授权
    Apparatus, system, and method for matching patterns with an ultra fast check engine based on flash cells 有权
    基于闪存单元的超快速检测引擎匹配模式的装置,系统和方法

    公开(公告)号:US09218879B2

    公开(公告)日:2015-12-22

    申请号:US13309475

    申请日:2011-12-01

    CPC classification number: G11C15/046 G11C16/0483

    Abstract: A check engine includes comparators, where each comparator has flash cells. Each comparator is configured to store at least one reference bit included in a set of reference bits defining a first pattern. Each comparator also includes an input for presenting at least one target bit included in a set of target bits defining a second pattern. Each comparator is configured to produce an output representing a level of matching between the at least one target bit and the at least one reference bit. The check engine is configured such that the outputs of the comparators are combined to produce a combined output that is compared to a reference signal to determine whether there is a match between the first pattern and the second pattern.

    Abstract translation: 检查引擎包括比较器,其中每个比较器具有闪存单元。 每个比较器被配置为存储包括在限定第一模式的一组参考位中的至少一个参考位。 每个比较器还包括用于呈现包含在定义第二图案的目标比特集合中的至少一个目标比特的输入。 每个比较器被配置为产生表示所述至少一个目标位与所述至少一个参考位之间的匹配水平的输出。 检查引擎被配置为使得比较器的输出被组合以产生与参考信号相比较的组合输出,以确定第一图案和第二图案之间是否存在匹配。

    Magnetic Logic Units Configured to Measure Magnetic Field Direction

    公开(公告)号:US20150077097A1

    公开(公告)日:2015-03-19

    申请号:US14552363

    申请日:2014-11-24

    Abstract: An apparatus includes circuits, a field line configured to generate a magnetic field based on an input, a sensing module configured to determine a parameter of each circuit, and a magnetic field direction determination module configured to determine an angular orientation of the apparatus relative to an external magnetic field based on the parameter. Each circuit includes multiple magnetic tunnel junctions. Each magnetic tunnel junction includes a storage layer having a storage magnetization direction and a sense layer having a sense magnetization direction configured based on the magnetic field. Each magnetic tunnel junction is configured such that the sense magnetization direction and a resistance of the magnetic tunnel junction vary based on the external magnetic field. The parameter varies based on the resistances of the multiple magnetic tunnel junctions. The magnetic field direction determination module is implemented in at least one of a memory or a processing device.

    Apparatus, system, and method for writing multiple magnetic random access memory cells with a single field line
    59.
    发明授权
    Apparatus, system, and method for writing multiple magnetic random access memory cells with a single field line 有权
    用单个场线写入多个磁性随机存取存储器单元的装置,系统和方法

    公开(公告)号:US08902643B2

    公开(公告)日:2014-12-02

    申请号:US13648221

    申请日:2012-10-09

    CPC classification number: G11C11/1675 G11C8/08 G11C11/1659 G11C11/1693

    Abstract: A memory device includes a plurality of magnetic random access memory (MRAM) cells, a field line, and a field line controller configured to generate a write sequence that traverses the field line. The write sequence is for writing a multi-bit word to the plurality of MRAM cells. The multi-bit word includes a first subset of bits having a first polarity and a second subset of bits having a second polarity. The write sequence writes concurrently to at least a subset of the plurality of MRAM cells corresponding to the first subset of bits having the first polarity, then subsequently writes concurrently to a remaining subset of the plurality of MRAM cells corresponding to the second subset of bits having the second polarity.

    Abstract translation: 一种存储器件包括多个磁性随机存取存储器(MRAM)单元,一个场线,以及一个现场线控制器,被配置为产生穿过场线的写入序列。 写入序列用于将多位字写入多个MRAM单元。 多位字包括具有第一极性的位的第一子集和具有第二极性的位的第二子集。 所述写入顺序并行地写入与具有所述第一极性的所述第一第一子集对应的所述多个MRAM单元的至少一个子集,然后并行地写入所述多个MRAM单元的对应于具有 第二极性。

    Magnetic Random Access Memory Cells with Isolating Liners
    60.
    发明申请
    Magnetic Random Access Memory Cells with Isolating Liners 有权
    具有隔离衬垫的磁性随机存取存储器单元

    公开(公告)号:US20140252516A1

    公开(公告)日:2014-09-11

    申请号:US14203362

    申请日:2014-03-10

    CPC classification number: H01L43/12 H01L27/222 H01L43/08

    Abstract: A manufacturing method to form a memory device includes forming a hard mask on a magnetic stack. A first magnetic stack etch is performed to form exposed magnetic layers. A liner is applied to the exposed magnetic layers to form protected magnetic layers. A second magnetic stack etch forms a magnetic random access memory (MRAM) cell, where the liner prevents shunting between the protected magnetic layers.

    Abstract translation: 形成存储器件的制造方法包括在磁性堆叠上形成硬掩模。 执行第一磁栈蚀刻以形成暴露的磁性层。 将衬垫施加到暴露的磁性层以形成受保护的磁性层。 第二磁栈蚀刻形成磁性随机存取存储器(MRAM)单元,其中衬垫防止受保护的磁层之间的分流。

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