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    SiC SINGLE CRYSTAL SUBSTRATE
    51.
    发明公开
    SiC SINGLE CRYSTAL SUBSTRATE 审中-公开

    公开(公告)号：US20230392288A1

    公开(公告)日：2023-12-07

    申请号：US18328263

    申请日：2023-06-02

    申请人： Resonac Corporation

    发明人： Takuya YAMAGUCHI ,  Koji Kamei ,  Naoki Oyanagi

    IPC分类号： C30B29/36

    CPC分类号： C30B29/36

    摘要： A SiC single crystal substrate of an embodiment has a diameter being 199 mm or more, wherein the density of threading dislocations per area of 0.25 mm2 arbitrarily selected in the main surface of the SiC single crystal substrate is 5×104/cm2 or less, and the threading dislocations include a threading edge dislocation.

    8-INCH N-TYPE SiC SINGLE CRYSTAL SUBSTRATE
    52.
    发明公开
    8-INCH N-TYPE SiC SINGLE CRYSTAL SUBSTRATE 审中-公开

    公开(公告)号：US20230392287A1

    公开(公告)日：2023-12-07

    申请号：US18203254

    申请日：2023-05-30

    申请人： Resonac Corporation

    发明人： Tomohiro SHONAI

    IPC分类号： C30B29/36

    CPC分类号： C30B29/36

    摘要： An 8 inch n-type SiC single crystal substrate of an embodiment has a diameter in the range of 195 to 205 mm, a thickness in the range of 300 μm to 650 μm, thicknesses of work-affected layers on both the front and back sides are 0.1 nm or less, and the dopant concentration is 2×1018/cm3 or more and 6×1019/cm3 or less at least five arbitrarily selected points in the plane within 5% of the thickness of the substrate in the depth direction from the main surface of the substrate.

    Magnetic sensor
    54.
    发明授权
    Magnetic sensor 有权

    公开(公告)号：US11821963B2

    公开(公告)日：2023-11-21

    申请号：US17701968

    申请日：2022-03-23

    申请人： SHOWA DENKO K.K.

    发明人： Daizo Endo ,  Akira Sakawaki

    IPC分类号： G01R33/06

    CPC分类号： G01R33/063

    摘要： A magnetic sensor 1 includes: a non-magnetic substrate 10; and a sensitive element 30 disposed on the substrate 10. The sensitive element 30 has a longitudinal direction and a transverse direction and has a uniaxial magnetic anisotropy in a direction intersecting the longitudinal direction. The sensitive element 30 is configured to sense a magnetic field by a magnetic impedance effect. The sensitive element 30 includes a soft magnetic material layer 101 made of an amorphous alloy based on Co and having a saturation magnetization of greater than or equal to 300 emu/cc and less than or equal to 650 emu/cc.

    Single crystal growth crucible and single crystal growth method
    56.
    发明授权
    Single crystal growth crucible and single crystal growth method 有权

    公开(公告)号：US11814749B2

    公开(公告)日：2023-11-14

    申请号：US16559863

    申请日：2019-09-04

    申请人： SHOWA DENKO K.K.

    发明人： Yohei Fujikawa

    IPC分类号： C30B35/00 ,  C30B23/06 ,  C30B23/02

    CPC分类号： C30B35/002 ,  C30B23/025 ,  C30B23/066 ,  C30B35/007

    摘要： The present invention provides a single crystal growth crucible and a single crystal growth method which can suppress the recrystallization of the raw material gas which has been sublimated on the surface of the raw material and can suppress the generation of different polytypes in single crystal growth. The single crystal growth crucible includes an inner bottom, a crystal mounting part, and a deposition preventing member, wherein a raw material is provided in the inner bottom, the crystal mounting part faces the inner bottom, the deposition preventing member has a first surface comprising metal carbide, a first surface is disposed to face the crystal mounting part, the deposition preventing member is disposed in a central area of the inner bottom in a plan view from the crystal mounting part, and the first surface is disposed in accordance with the position of the surface of the raw material.