公开(公告)号：US07842991B2

公开(公告)日：2010-11-30

申请号：US11798703

申请日：2007-05-16

Applicant: Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

Inventor： Sung-Il Cho ,  Choong-rae Cho ,  Eun-hong Lee ,  In-kyeong Yoo

IPC: H01L27/108

CPC classification number: H01L27/115 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/51 ,  H01L27/112 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

Abstract: A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode.

Abstract translation: 非易失性存储器件包括至少一个开关器件和至少一个电连接到该至少一个开关器件的存储节点。 所述至少一个存储节点包括下电极，一个或多个缺氧金属氧化物层，一个或多个数据存储层和上电极。 一个或多个金属氧化物层中的至少一个电连接到下电极。 所述一个或多个数据存储层中的至少一个电连接到所述一个或多个金属氧化物层中的至少一个。 上电极电连接到一个或多个数据存储层中的至少一个。 制造非易失性存储器件的方法包括制备至少一个开关器件并形成下电极，一个或多个金属氧化物层，一个或多个数据存储层和上电极。

公开(公告)号：US07521704B2

公开(公告)日：2009-04-21

申请号：US11116332

申请日：2005-04-28

Applicant: Myoung-jae Lee ,  In-kyeong Yoo ,  Sun-ae Seo ,  Dong-seok Suh ,  David Seo ,  Sang-hun Jeon

Inventor： Myoung-jae Lee ,  In-kyeong Yoo ,  Sun-ae Seo ,  Dong-seok Suh ,  David Seo ,  Sang-hun Jeon

IPC: H01L29/02

CPC classification number: G11C13/0004 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

Abstract: A memory device using a multi-layer with a graded resistance change is provided. The memory device includes: a lower electrode; a data storage layer being located on the lower electrode and having the graded resistance change; and an upper electrode being located on the data storage layer.

Abstract translation: 提供了使用具有分级电阻变化的多层的存储器件。 存储器件包括：下电极; 数据存储层位于下电极上并具有分级电阻变化; 并且上电极位于数据存储层上。

公开(公告)号：US07482648B2

公开(公告)日：2009-01-27

申请号：US11024469

申请日：2004-12-30

Applicant: Wenxu Xianyu ,  Takashi Noguchi ,  In-kyeong Yoo ,  Young-soo Park

Inventor： Wenxu Xianyu ,  Takashi Noguchi ,  In-kyeong Yoo ,  Young-soo Park

IPC: H01L31/119

CPC classification number: H01L27/11507 ,  H01L21/84 ,  H01L27/11502 ,  H01L27/12

Abstract: In an electronic device, and a method of manufacturing the same, the electronic device includes a first substrate, a first lower capacitor on the first substrate, a first lower switching element on the first lower capacitor, and a second substrate on the first lower switching element. The electronic device may further include a second lower switching element which is isolated from the first lower capacitor, and an upper capacitor on the second substrate, the lower electrode of the upper capacitor being connected to the second lower switching element.

Abstract translation: 在电子设备及其制造方法中，电子设备包括第一基板，第一基板上的第一下部电容器，第一下部电容器上的第一下部开关元件，以及第一下部开关 元件。 电子设备还可以包括与第一下电容器隔离的第二下开关元件和第二基板上的上电容器，上电容器的下电极连接到第二下开关元件。

公开(公告)号：US20080315285A1

公开(公告)日：2008-12-25

申请号：US12071452

申请日：2008-02-21

Applicant: Tae-hee Lee ,  Jae-woong Hyun ,  Ju-hee Park ,  In-kyeong Yoo ,  Yoon-dong Park ,  Won-joo Kim ,  Jung-hoon Lee

Inventor： Tae-hee Lee ,  Jae-woong Hyun ,  Ju-hee Park ,  In-kyeong Yoo ,  Yoon-dong Park ,  Won-joo Kim ,  Jung-hoon Lee

IPC: H01L29/788 ,  H01L21/336

CPC classification number: H01L29/7881 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L29/42336

Abstract: Non-volatile memory devices and methods of fabricating the same are provided. The non-volatile memory devices may include a semiconductor substrate having a pair of sidewall channel regions extending from the semiconductor substrate and opposite to each other, and a floating gate electrode between the pair of sidewall channel regions and protruding from the semiconductor substrate. A control gate electrode may be formed on the semiconductor substrate and a portion of the floating gate electrode.

Abstract translation: 提供非易失性存储器件及其制造方法。 非易失性存储器件可以包括具有从半导体衬底延伸并且彼此相对的一对侧壁沟道区的半导体衬底，以及在该对侧壁沟道区之间并从半导体衬底突出的浮置栅电极。 控制栅电极可以形成在半导体衬底和浮栅电极的一部分上。

公开(公告)号：US20080138659A1

公开(公告)日：2008-06-12

申请号：US11980418

申请日：2007-10-31

Applicant: Chee-kheng Lim ,  In-kyeong Yoo ,  Sung-hoon Choa

Inventor： Chee-kheng Lim ,  In-kyeong Yoo ,  Sung-hoon Choa

IPC: G11B5/127 ,  G11B21/02

CPC classification number: G11C11/14 ,  G11C19/0808 ,  G11C19/0841 ,  G11C21/00 ,  Y10T428/11

Abstract: Example embodiments may provide data storage devices using movement of a magnetic domain wall and/or a method of operating magnetic domain data storage devices. The data storage device may include a first magnetic layer for writing data having two magnetic domains magnetized in different directions, a second magnetic layer for storing data at a side of the first magnetic layer, a data recording device connected to the first magnetic layer and the second magnetic layer, and a plurality of reading heads configured to read the second magnetic layer. The data storage device may store a larger amount of data without requiring moving mechanical systems.

Abstract translation: 示例性实施例可以使用磁畴壁的移动和/或操作磁畴数据存储设备的方法来提供数据存储设备。 数据存储装置可以包括用于写入具有不同方向磁化的两个磁畴的数据的第一磁性层，用于在第一磁性层的一侧存储数据的第二磁性层，连接到第一磁性层的数据记录装置和 第二磁性层和被配置为读取第二磁性层的多个读取头。 数据存储设备可以存储更大量的数据，而不需要移动机械系统。

公开(公告)号：US07378328B2

公开(公告)日：2008-05-27

申请号：US11352310

申请日：2006-02-13

Applicant: Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

Inventor： Won-bong Choi ,  In-kyeong Yoo ,  Jae-uk Chu

IPC: H01L21/20

CPC classification number: B82Y10/00 ,  G11C13/025 ,  G11C2213/17 ,  Y10S977/943

Abstract: A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

Abstract translation: 一种由碳纳米管存储器件及其形成方法形成的快速，可靠，高度集成的存储器件，其中碳纳米管存储器件包括衬底，源电极，漏电极，具有高电的碳纳米管和 热导率，具有优异电荷存储能力的存储单元和栅电极。 源电极和漏电极在它们之间以预定间隔布置在衬底上并经受电压。 碳纳米管将源电极连接到漏电极并用作电荷运动的通道。 存储单元位于碳纳米管之上，并存储来自碳纳米管的电荷。 栅电极形成为与存储单元的上表面接触，并控制从碳纳米管流入存储单元的电荷量。

公开(公告)号：US20070165434A1

公开(公告)日：2007-07-19

申请号：US11655086

申请日：2007-01-19

Applicant: Jung-Hyun Lee ,  Eun-Hong Lee ,  Sang-Jun Choi ,  In-Kyeong Yoo ,  Myoung-Jae Lee

Inventor： Jung-Hyun Lee ,  Eun-Hong Lee ,  Sang-Jun Choi ,  In-Kyeong Yoo ,  Myoung-Jae Lee

IPC: G11C27/00

CPC classification number: G11C13/003 ,  G11C13/0007 ,  G11C2213/32 ,  G11C2213/76

Abstract: Resistive memory devices having at least one varistor and methods of operating the same are disclosed. The resistive memory device may include at least one bottom electrode line, at least one top electrode line crossing the at least one bottom electrode line, and at least one stack structure disposed at an intersection of the at least one top electrode line and the at least one bottom electrode line including a varistor and a data storage layer.

Abstract translation: 公开了具有至少一个压敏电阻的电阻式存储器件及其操作方法。 电阻式存储器件可以包括至少一个底部电极线，与至少一个底部电极线交叉的至少一个顶部电极线以及至少一个堆叠结构，该至少一个堆叠结构设置在至少一个顶部电极线和至少一个顶部电极线的交点处 一个底部电极线包括变阻器和数据存储层。

公开(公告)号：US20070114587A1

公开(公告)日：2007-05-24

申请号：US11654626

申请日：2007-01-18

Applicant: Sun-ae Seo ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Wan-jun Park

Inventor： Sun-ae Seo ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Wan-jun Park

IPC: H01L29/94

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

Abstract: A nonvolatile memory device including one transistor and one resistant material and a method of manufacturing the nonvolatile memory device are provided. The nonvolatile memory device includes a substrate, a transistor formed on the substrate, and a data storage unit connected to a drain of the transistor. The data storage unit includes a data storage material layer having different resistance characteristics in different voltage ranges.

Abstract translation: 提供了包括一个晶体管和一个电阻材料的非易失性存储器件以及制造非易失性存储器件的方法。 非易失性存储器件包括衬底，形成在衬底上的晶体管，以及连接到晶体管的漏极的数据存储单元。 数据存储单元包括在不同电压范围内具有不同电阻特性的数据存储材料层。

公开(公告)号：US20070099309A1

公开(公告)日：2007-05-03

申请号：US11640229

申请日：2006-12-18

Applicant: Seung-bum Hong ,  In-kyeong Yoo ,  Ju-hwan Jung

Inventor： Seung-bum Hong ,  In-kyeong Yoo ,  Ju-hwan Jung

IPC: H01L21/00

CPC classification number: B82Y10/00 ,  G11B9/08 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1472 ,  G11B9/149 ,  G11B11/08 ,  G11B13/06

Abstract: A high-density data storage medium, a method of manufacturing the data storage medium, a high-density data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus are provided. The data storage medium includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer. The data storage apparatus includes a stage supporting a data storage medium, which includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer, a scanner driving the stage, a probe placed over the data storage medium and including a tip forming an electric field with the data storage medium and a cantilever supporting the tip placed at its one end so as to maintain a predetermined distance between the data storage medium and the tip, a circuit unit applying a driving signal, a data write signal, and a data erase signal to the scanner and the probe and detecting a data read signal, and a light source irradiating light on the data storage medium.

公开(公告)号：US20060284793A1

公开(公告)日：2006-12-21

申请号：US11453537

申请日：2006-06-15

Applicant: Young-soo Park ,  Jung-woo Kim ,  Jang-yeon Kwon ,  In-kyeong Yoo

Inventor： Young-soo Park ,  Jung-woo Kim ,  Jang-yeon Kwon ,  In-kyeong Yoo

IPC: G09G3/20

CPC classification number: H04M1/72527 ,  H04M1/0266

Abstract: Provided is a display system that uses a mobile communication terminal. The display system includes a mobile communication terminal having an insertion unit, and a mobile display device having a slot-type connection unit insertable into the insertion unit of the mobile communication terminal. Accordingly, it is possible to display received content on a display screen larger than that of the mobile communication terminal. Also, the display system overcomes noise problems and displays high-definition images by constructing a minimum number of connection terminals that connect the mobile display device to the mobile communication terminal. A method for displaying an image from a mobile communication terminal and a computer program product including a storage medium for performing the method are also provided.

Abstract translation: 提供了一种使用移动通信终端的显示系统。 显示系统包括具有插入单元的移动通信终端和具有插入到移动通信终端的插入单元中的时隙型连接单元的移动显示装置。 因此，可以在比移动通信终端大的显示画面上显示接收到的内容。 此外，显示系统通过构造将移动显示装置连接到移动通信终端的最少数量的连接终端来克服噪声问题并显示高清晰度图像。 还提供了一种用于从移动通信终端显示图像的方法以及包括用于执行该方法的存储介质的计算机程序产品。