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    Method and system for controlling radical distribution
    51.
    发明授权
    Method and system for controlling radical distribution 有权
    控制激进分布的方法和系统

    公开(公告)号：US08038834B2

    公开(公告)日：2011-10-18

    申请号：US12754662

    申请日：2010-04-06

    Applicant: Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

    Inventor： Merritt Funk ,  David V. Horak ,  Eric J. Strang ,  Lee Chen

    IPC: H01L21/3065 ,  C23C16/00 ,  C23C16/455 ,  C23C16/50

    CPC classification number: C23C16/4412 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

    Abstract: A plasma processing system includes a processing chamber, a substrate holder configured to hold a substrate for plasma processing, and a gas injection assembly. The gas injection assembly includes a first evacuation port located substantially in a center of the gas injection assembly and configured to evacuate gases from a central region of the substrate, and a gas injection system configured to inject gases in the process chamber. The plasma processing system also includes a second evacuation port configured to evacuate gases from a peripheral region surrounding the central region of the substrate.

    Abstract translation: 等离子体处理系统包括处理室，被配置为保持用于等离子体处理的基板的基板保持器和气体注入组件。 气体注入组件包括基本上位于气体注入组件的中心并且构造成从衬底的中心区域排出气体的第一排气口，以及构造成在处理室中注入气体的气体注入系统。 等离子体处理系统还包括构造成从围绕衬底的中心区域的周边区域排出气体的第二排气口。

    DC and RF hybrid processing system
    52.
    发明授权
    DC and RF hybrid processing system 有权
    DC和RF混合处理系统

    公开(公告)号：US07993937B2

    公开(公告)日：2011-08-09

    申请号：US12887576

    申请日：2010-09-22

    Applicant: Lee Chen ,  Merritt Funk

    Inventor： Lee Chen ,  Merritt Funk

    IPC: H01L21/00 ,  H01L21/66 ,  G01R31/26

    CPC classification number: H01J37/32027 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32935 ,  H01J37/3299

    Abstract: The invention can provide apparatus and methods for processing substrates and/or wafers in real-time using at least one Direct Current (DC)/Radio Frequency (RF) Hybrid (DC/RFH) processing system and associated Direct Current/Radio Frequency Hybrid (DC/RFH) procedures and DC/RFH process parameters and/or DC/RFH models.

    Abstract translation: 本发明可以提供使用至少一个直流（DC）/射频（RF）混合（DC / RFH）处理系统和相关联的直流/射频混合（DC / RFH）处理系统来实时处理衬底和/或晶片的装置和方法 DC / RFH）程序和DC / RFH过程参数和/或DC / RFH模型。

    Stable surface wave plasma source
    54.
    发明申请
    Stable surface wave plasma source 有权
    稳定的表面波等离子体源

    公开(公告)号：US20110057562A1

    公开(公告)日：2011-03-10

    申请号：US12555080

    申请日：2009-09-08

    Applicant: Lee CHEN ,  Jianping ZHAO ,  Ronald V. BRAVENEC ,  Merritt FUNK

    Inventor： Lee CHEN ,  Jianping ZHAO ,  Ronald V. BRAVENEC ,  Merritt FUNK

    IPC: H05H1/26 ,  H01P3/00

    CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/67005 ,  H01Q13/10

    Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having a plurality of slots. The SWP source further comprises a first recess configuration formed in the plasma surface, wherein the first recess configuration is substantially aligned with a first arrangement of slots in the plurality of slots, and a second recess configuration formed in the plasma surface, wherein the second recess configuration is either partly aligned with a second arrangement of slots in the plurality of slots or not aligned with the second arrangement of slots in the plurality of slots. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

    Abstract translation: 描述了表面波等离子体（SWP）源。 SWP源包括电磁（EM）波发射器，其被配置为通过在邻近等离子体的EM波发射器的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体。 EM波发射器包括具有多个槽的缝隙天线。 SWP源还包括形成在等离子体表面中的第一凹陷构型，其中第一凹槽构型基本上与多个槽中的槽的第一布置对准，以及形成在等离子体表面中的第二凹槽构型，其中第二凹槽 配置部分地与多个槽中的槽的第二布置部分对准或者不与多个槽中的槽的第二布置对准。 功率耦合系统耦合到EM波发射器并且被配置为向用于形成等离子体的EM波发射器提供EM能量。

    Real-time parameter tuning for etch processes
    55.
    发明授权
    Real-time parameter tuning for etch processes 有权
    蚀刻工艺的实时参数调整

    公开(公告)号：US07801635B2

    公开(公告)日：2010-09-21

    申请号：US11668537

    申请日：2007-01-30

    Applicant: Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

    Inventor： Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

    IPC: G06F19/00

    CPC classification number: G05B19/41865 ,  G05B2219/32097 ,  G05B2219/45031 ,  G05B2219/45212 ,  Y02P90/20 ,  Y02P90/86

    Abstract: The invention can provide a method of etch processing a wafer using a Real-Time Parameter Tuning (RTPT) procedure to receive an input message that can include a pass-through message, a real-time feedforward message, or a real-time optimization message, or any combination thereof. The RTPT procedures can use real-time wafer data to create, modify, and/or use etch recipe data, etch profile data, and/or etch model data. In addition, RTPT procedures can use real-time wafer data to create, modify, and/or use process recipe data, process profile data, and/or process model data.

    Abstract translation: 本发明可以提供使用实时参数调整（RTPT）过程来蚀刻处理晶片的方法，以接收可以包括直通消息，实时前馈消息或实时优化消息的输入消息 ，或其任何组合。 RTPT程序可以使用实时晶片数据来创建，修改和/或使用蚀刻配方数据，蚀刻轮廓数据和/或蚀刻模型数据。 此外，RTPT程序可以使用实时晶片数据来创建，修改和/或使用过程配方数据，过程配置文件数据和/或过程模型数据。

    Method and apparatus for creating a Spacer-Optimization (S-O) library
    56.
    发明授权
    Method and apparatus for creating a Spacer-Optimization (S-O) library 失效
    用于创建间隔优化（S-O）库的方法和装置

    公开(公告)号：US07765077B2

    公开(公告)日：2010-07-27

    申请号：US11859596

    申请日：2007-09-21

    Applicant: Asao Yamashita ,  Merritt Funk ,  Daniel J. Prager ,  Lee Chen ,  Radha Sundaranajan

    Inventor： Asao Yamashita ,  Merritt Funk ,  Daniel J. Prager ,  Lee Chen ,  Radha Sundaranajan

    IPC: G01D18/00

    CPC classification number: H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The invention can provide a method of processing a substrate using Spacer-Optimization (S-O) processing sequences and evaluation libraries that can include one or more optimized spacer creation and evaluation procedures. In addition, the S-O processing sequences can include one or more deposition procedures, one or more partial-etch procedures, one or more chemical oxide removal (COR)-etch procedures, one or more optimization procedures, one or more evaluation procedures, and/or one or more verification procedures.

    Abstract translation: 本发明可以提供使用间隔优化（S-O）处理序列和评估库来处理底物的方法，其可以包括一个或多个优化的间隔物产生和评估程序。 此外，SO处理序列可以包括一个或多个沉积程序，一个或多个部分蚀刻程序，一个或多个化学氧化物去除（COR）获取程序，一个或多个优化程序，一个或多个评估程序和/ 或一个或多个验证程序。

    Multi-plasma neutral beam source and method of operating
    57.
    发明授权
    Multi-plasma neutral beam source and method of operating 有权
    多等离子体中性束源及其操作方法

    公开(公告)号：US07732759B2

    公开(公告)日：2010-06-08

    申请号：US12126456

    申请日：2008-05-23

    Applicant: Lee Chen ,  Merritt Funk

    Inventor： Lee Chen ,  Merritt Funk

    IPC: H05H3/06 ,  H05H3/00

    CPC classification number: H05H3/02 ,  H01J37/32357 ,  H01J37/32422

    Abstract: Method and system for producing a neutral beam source is described. The neutral beam source comprises a plasma generation system for forming a first plasma in a first plasma region, a plasma heating system for heating electrons from the first plasma region in a second plasma region to form a second plasma, and a neutralizer grid for neutralizing ion species from the second plasma in the second plasma region. Furthermore, the neutral beam source comprises an electron acceleration member configured to accelerate the electrons from the first plasma region into the second plasma region. Further yet, the neutral beam source comprises a pumping system that enables use of the neutral beam source for semiconductor processing applications, such as etching processes.

    Abstract translation: 描述了用于生产中性束源的方法和系统。 中性束源包括用于在第一等离子体区域中形成第一等离子体的等离子体产生系统，用于在第二等离子体区域中从第一等离子体区域加热电子以形成第二等离子体的等离子体加热系统，以及用于中和离子的中和器栅格 来自第二等离子体区域中的第二等离子体的物质。 此外，中性束源包括被配置为将电子从第一等离子体区域加速到第二等离子体区域中的电子加速构件。 此外，中性束源包括泵送系统，其能够使用中性束源用于诸如蚀刻工艺的半导体处理应用。

    Method of using a wafer-thickness-dependant profile library
    60.
    发明授权
    Method of using a wafer-thickness-dependant profile library 有权
    使用晶片厚度依赖型谱库的方法

    公开(公告)号：US07571074B2

    公开(公告)日：2009-08-04

    申请号：US11668690

    申请日：2007-01-30

    Applicant: Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

    Inventor： Merritt Funk ,  Sachin Deshpande ,  Kevin Lally

    IPC: G01B11/02 ,  G06F17/40

    CPC classification number: G01B11/0616 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70608 ,  G03F7/70691

    Abstract: A method for facilitating an ODP (optical digital profile) measurement of a semiconductor wafer. The method includes obtaining real time wafer characteristic data for a measurement site on the wafer and detecting a measured diffraction signal from a structure within the measurement site of the wafer. The measured diffraction signal is matched with a simulated diffraction signal stored in a wafer characteristic dependent profile library. A hypothetical profile structure associated with the simulated diffraction signal in the wafer characteristic dependent profile library is then identified. The real time wafer characteristic data is used to facilitate at least one of the matching and identifying. The real time wafer characteristic data may be real time wafer thickness data.

    Abstract translation: 一种用于促进半导体晶片的ODP（光学数字图形）测量的方法。 该方法包括获得晶片上的测量位置的实时晶片特性数据，并从晶片的测量位置内的结构检测测得的衍射信号。 测量的衍射信号与存储在晶片特征依赖型谱库中的模拟衍射信号相匹配。 然后识别与晶片特性相关型材库中的模拟衍射信号相关联的假设轮廓结构。 实时晶片特征数据用于促进匹配和识别中的至少一个。 实时晶片特性数据可以是实时晶片厚度数据。

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