公开(公告)号：US11888462B2

公开(公告)日：2024-01-30

申请号：US17231429

申请日：2021-04-15

申请人： NGK INSULATORS, LTD.

发明人： Yudai Uno ,  Masashi Goto ,  Tomoyoshi Tai

IPC分类号： H03H9/02 ,  H03H3/08

CPC分类号： H03H9/02574 ,  H03H3/08 ,  H03H9/02559

摘要： A bonded body includes a supporting substrate; a piezoelectric material substrate; a first bonding layer provided on the supporting substrate and having a composition of Si(1-x)Ox (0.008≤x≤0.408); a second bonding layer provided on the piezoelectric material substrate and having a composition of Si(1-y)Oy (0.008≤y≤0.408); and an amorphous layer provided between the first bonding layer and second bonding layer. The oxygen ratio of the amorphous layer is higher than the oxygen ratio of the first bonding layer and oxygen ratio of the second bonding layer.

公开(公告)号：US11887873B2

公开(公告)日：2024-01-30

申请号：US16822541

申请日：2020-03-18

申请人： NGK INSULATORS, LTD.

发明人： Keita Mine ,  Takumi Wakisaka

IPC分类号： H01L21/67 ,  H01L21/673 ,  H01L21/683 ,  H01B3/28 ,  H05B3/28

CPC分类号： H01L21/67109 ,  H01L21/673 ,  H01L21/6833 ,  H01L21/6835 ,  H05B3/283 ,  H05B2203/016 ,  H05B2203/017

摘要： A wafer placement apparatus includes a ceramic plate having an upper surface as a wafer placement surface and in which an electrode is embedded; and a cooling plate provided on a lower surface, opposite a wafer placement surface, of a ceramic plate and in which a refrigerant passage is provided, wherein a refrigerant passage includes a first passage forming a single continuous line and extending parallel to a wafer placement surface, and a second passage forming a single continuous line and extending along a first passage, an outlet of a second passage being positioned near an inlet of a first passage, an inlet of a second passage being positioned near an outlet of a first passage.

公开(公告)号：US11879865B2

公开(公告)日：2024-01-23

申请号：US17207986

申请日：2021-03-22

申请人： NGK INSULATORS, LTD.

发明人： Yusuke Watanabe ,  Mika Kai ,  Ryo Onishi ,  Saki Suzuki ,  Takashi Hino

IPC分类号： G01N27/407 ,  C04B38/00 ,  G01N27/41 ,  G01N27/419

CPC分类号： G01N27/4077 ,  C04B38/00 ,  G01N27/4071 ,  G01N27/4078 ,  G01N27/41 ,  G01N27/419

摘要： A sensor element includes: an inner protective layer having a porosity of 30% to 65% on two main surfaces; an intermediate protective layer, at least a part of which has contact with the inner layer, and having a porosity of 25% to 80%, which is equal to or smaller than the porosity of the inner layer; and an outer protective layer surrounding an element base on an outermost periphery on the one end portion of the sensor element, having contact with the intermediate and the inner layer, having contact with a leading end surface of the element base or the intermediate layer on the leading end surface, and having a porosity of 15% to 30%, which is smaller than the porosity of the intermediate layer, wherein a difference of porosity between the inner and the outer layer is 10% to 50%.

公开(公告)号：US20240018668A1

公开(公告)日：2024-01-18

申请号：US18354185

申请日：2023-07-18

申请人： NGK INSULATORS, LTD.

发明人： Hirofumi KAN ,  Atsushi TORII

IPC分类号： C25B1/23 ,  C25B1/02 ,  C25B11/054 ,  C25B9/70 ,  C25B15/027 ,  C25B15/08 ,  C25B3/03

CPC分类号： C25B1/23 ,  C25B1/02 ,  C25B11/054 ,  C25B9/70 ,  C25B15/027 ,  C25B15/08 ,  C25B3/03

摘要： A methane production system includes a co-electrolysis device and a reforming device connected to the co-electrolysis device. The co-electrolysis device has a co-electrolysis cell including a first electrode at which H2, CO, and O2− are produced from CO2 and H2O, an electrolyte capable of transferring O2−, and a second electrode at which O2 is produced from the O2− transferred from the first electrode through the electrolyte. The reforming device has a reforming cell that produces CH4 from the H2 and CO produced at the first electrode.

公开(公告)号：US11874180B2

公开(公告)日：2024-01-16

申请号：US17115970

申请日：2020-12-09

申请人： NGK INSULATORS, LTD.

发明人： Ryohei Matsushita

IPC分类号： G01K7/02 ,  H05B3/02 ,  H05B3/74 ,  H05B3/28

CPC分类号： G01K7/02 ,  H05B3/02 ,  H05B3/283 ,  H05B3/74 ,  H05B2203/005

摘要： A ceramic heater includes a ceramic plate having a surface that serves as a wafer placement surface, resistance heating elements that are embedded in the ceramic plate, a tubular shaft that supports the ceramic plate from a rear surface of the ceramic plate, and a thermocouple passage that extends from a start point in a within-shaft region of the rear surface of the ceramic plate, the within-shaft region being surrounded by the tubular shaft, to a terminal end position in an outer peripheral portion of the ceramic plate. The thermocouple passage includes a stepped portion formed at an intermediate position between the start point and the terminal end position, a long-distance portion extending from the start position to the terminal end position, and a short-distance portion extending from the start position to the intermediate position.

公开(公告)号：US20240006194A1

公开(公告)日：2024-01-04

申请号：US18180919

申请日：2023-03-09

申请人： NGK Insulators, Ltd.

发明人： Mitsuru KOJIMA ,  Hiroshi TAKEBAYASHI ,  Jyunya WAKI

IPC分类号： H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67017 ,  H01L21/68757 ,  H01L21/68785

摘要： A member for semiconductor manufacturing apparatus includes: a ceramic plate having a wafer placement surface; a conductive base plate; a gas common passage provided inside the base plate; gas outlet passages provided to reach the wafer placement surface from the gas common passage; at least one gas inlet passage provided to communicate with the gas common passage from a lower surface of the base plate; and an insulating sleeve disposed in a base plate through-hole. The insulating sleeve has a first communication hole that constitutes part of the gas common passage, and a second communication hole that is provided to reach an upper surface of the insulating sleeve from the first communication hole, and constitute part of the gas outlet passages.

公开(公告)号：US20240002997A1

公开(公告)日：2024-01-04

申请号：US18465265

申请日：2023-09-12

申请人： NGK INSULATORS, LTD.

发明人： Kentaro NONAKA ,  Yoshinori ISODA ,  Katsuhiro IMAI

IPC分类号： C23C14/34

CPC分类号： C23C14/3407

摘要： A sputtering target includes a gallium nitride-based crystalline body composed of a plurality of gallium nitride-based monocrystalline grains whose c-axes are orientated in a direction normal to a predetermined surface. The gallium nitride-based crystalline body has a total oxygen concentration of 150 mass ppm or lower, and the gallium nitride-based monocrystalline grains have oxygen concentrations of 2×1017 cm−3 or higher measured by dynamic SIMS method.

公开(公告)号：US11862689B2

公开(公告)日：2024-01-02

申请号：US18170819

申请日：2023-02-17

申请人： NGK INSULATORS, LTD.

发明人： Katsuhiro Imai ,  Masahiro Sakai ,  Hiroki Kobayashi

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/06 ,  H01L21/304

CPC分类号： H01L29/2003 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/304 ,  H01L29/0657

摘要： Group-III element nitride semiconductor substrate including a first surface and a second surface that are easy to visually distinguish from each other. An end portion is easily detected with an optical sensor, a large effective area (area that can be used in device production) can be secured, and warping of the entirety of the substrate is reduced. A Group-III element nitride semiconductor substrate includes a first surface; and a second surface, wherein the first surface is a mirror surface, the second surface has a second-surface central region and a second-surface outer peripheral region, the second-surface central region is a mirror surface, and the second-surface outer peripheral region is a non-mirror surface.

公开(公告)号：US20230420734A1

公开(公告)日：2023-12-28

申请号：US18461757

申请日：2023-09-06

申请人： NGK INSULATORS, LTD. ,  NAGOYA INSTITUTE OF TECHNOLOGY

发明人： Yosuke SATO ,  En YAGI ,  Satoshi OZAKI ,  Toshihiro YOSHIDA ,  Yuji KATSUDA ,  Mizuki HIROSE ,  Reona MIYAZAKI

IPC分类号： H01M10/0562

CPC分类号： H01M10/0562 ,  H01M2300/0068

摘要： A solid electrolyte is composed primarily of a component expressed by a composition formula of Lia+dMbXcAeOf by using values a to f that are greater than 0, where M is an element serving as a trivalent cation, X is a halogen element, and A is a sulfur element or a phosphorus element, wherein 0.8c≤(a+3b)≤1.2c and 1.6f≤(d+n×e)≤2.4f are satisfied, where when A is a sulfur element, n is 4 or 6, and when A is a phosphorus element, n is 5.

公开(公告)号：US20230420230A1

公开(公告)日：2023-12-28

申请号：US18166611

申请日：2023-02-09

申请人： NGK Insulators, Ltd.

发明人： Tatsuya Kuno ,  Masaki Ishikawa ,  Seiya Inoue

IPC分类号： H01J37/32 ,  F28F3/08

CPC分类号： H01J37/32724 ,  F28F3/083 ,  F28F3/086 ,  F28F2230/00 ,  H01J2237/002 ,  H01J2237/2007

摘要： A wafer placement table includes an upper substrate including a ceramic substrate and having a wafer placement surface, a lower substrate disposed on a lower surface of the upper substrate including a refrigerant flow path or a refrigerant flow-path groove, a through hole extending through the lower substrate in an up-down direction to intersect with the refrigerant flow path or the refrigerant flow-path groove, a screw hole provided in the lower surface of the upper substrate, at a position facing the through hole, a screw member inserted from a lower surface of the lower substrate into the through hole and screwed into the screw hole, and a refrigerant-leakage prevention member that prevents the refrigerant from leaking out to the lower surface of the lower substrate through the through hole into which the screw member is inserted.