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公开(公告)号：US20120032143A1
公开(公告)日：2012-02-09
申请号：US13273165
申请日：2011-10-13
Applicant: Tetsuya Takeuchi , Tatsuro Uchida , Mitsuhiro Ikuta
Inventor： Tetsuya Takeuchi , Tatsuro Uchida , Mitsuhiro Ikuta
Abstract: Provided is an emitting device which is capable of improving the luminous efficiency of an emitting layer formed using a group IV semiconductor material and obtaining an emission spectrum having a narrow band, and a manufacturing method therefor. The emitting device comprises: an emitting layer having a potential confinement structure, comprising: a well region comprising a group IV semiconductor material; and a barrier region being adjacent to the well region and comprising a group IV semiconductor material which is different from the group IV semiconductor material in the well region, wherein: a continuous region from the well region over an interface between the well region and the barrier region to a part of the barrier region comprises fine crystals; and a region in the barrier region, which is other than the continuous region comprising the fine crystals, is amorphous or polycrystalline region.
Abstract translation: 提供一种能够提高使用IV族半导体材料形成的发光层的发光效率并获得具有窄带的发射光谱的发光装置及其制造方法。 发光器件包括：具有电位限制结构的发射层，包括：包含IV族半导体材料的阱区; 以及与所述阱区相邻的阻挡区域，并且包括不同于所述阱区域中的IV族半导体材料的IV族半导体材料，其中：所述阱区域和所述势垒之间的界面上的所述阱区域的连续区域 区域到屏障区域的一部分包括细晶体; 并且除了包含微细晶体的连续区域之外的阻挡区域中的区域是无定形或多晶区域。
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52.发明授权Surface emitting laser, manufacturing method of surface emitting laser, surface emitting laser array, manufacturing method of surface emitting laser array, and optical apparatus including surface emitting laser array 有权表面发射激光器，表面发射激光器的制造方法，表面发射激光器阵列，表面发射激光器阵列的制造方法和包括表面发射激光器阵列的光学装置公开(公告)号：US08073035B2
公开(公告)日：2011-12-06
申请号：US12509676
申请日：2009-07-27
Applicant: Tetsuya Takeuchi
Inventor： Tetsuya Takeuchi
IPC: H01S5/00
CPC classification number: H01S5/18391 , H01S5/0425 , H01S5/0601 , H01S5/18311 , H01S5/32341 , H01S5/327
Abstract: A surface emitting laser configured by laminating on a substrate a lower reflection mirror, an active layer and an upper reflection mirror includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a convex high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, and an absorption layer causing band-to-band absorption is provided in the laminated structure.
Abstract translation: 通过在基板上层叠下反射镜，有源层和上反射镜而构成的表面发射激光器包括在上反射镜的发光部中具有用于控制由低反射率区域构成的反射率的结构， 形成在低反射率区域的中心部分并且以λ的波长振荡的凸高反射率区域，其中上反射镜由基于层压结构形成的多层膜反射镜构成，层叠结构通过层叠多层 ，并且在层叠结构中设置引起带间吸收的吸收层。
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53.发明授权Organic electroluminescence element, process for preparation of the same, and electrode film 有权有机电致发光元件，其制备方法以及电极膜公开(公告)号：US07967654B2
公开(公告)日：2011-06-28
申请号：US12173540
申请日：2008-07-15
Applicant: Yoshio Taniguchi , Masato Sugiyama , Shingo Hibino , Tetsuya Takeuchi , Ryo Minoshima
Inventor： Yoshio Taniguchi , Masato Sugiyama , Shingo Hibino , Tetsuya Takeuchi , Ryo Minoshima
CPC classification number: H05B33/04 , H01L51/0024 , H01L51/5221 , H01L51/5253 , H01L51/5259 , H01L51/56
Abstract: An organic electroluminescence element has a layered structure on a surface of a transparent substrate. The layered structure comprises an organic material layer including a light-emitting organic material layer, an opaque electrode layer, an insulating layer, a metal layer and a resin film in order. The organic electroluminescence element is improved in durability because moisture is prevented from permeating into a light-emitting element.
Abstract translation: 有机电致发光元件在透明基板的表面上具有层状结构。 层状结构依次包括有机材料层，其包括发光有机材料层，不透明电极层，绝缘层，金属层和树脂膜。 有机电致发光元件的耐久性得到改善，因为防止了湿气渗透到发光元件中。
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公开(公告)号：US20100329745A1
公开(公告)日：2010-12-30
申请号：US12881399
申请日：2010-09-14
Applicant: Tatsuro Uchida , Mitsuhiro Ikuta , Tetsuya Takeuchi
Inventor： Tatsuro Uchida , Mitsuhiro Ikuta , Tetsuya Takeuchi
IPC: G03G15/04
CPC classification number: H01S5/423 , H01S5/18311 , H01S5/18369 , H01S5/18377 , H01S5/18391 , H01S5/209 , H01S5/34326 , H01S2301/166
Abstract: Provided is a process for producing a surface emitting laser including a surface relief structure provided on laminated semiconductor layers, including the steps of transferring, to a first dielectric film, a first pattern for defining a mesa structure and a second pattern for defining the surface relief structure in the same process; and forming a second dielectric film on the first dielectric film and a surface of the laminated semiconductor layers to which the first pattern and the second pattern have been transferred. Accordingly, a center position of the surface relief structure can be aligned with a center position of a current confinement structure at high precision.
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55.发明申请RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE DISPLAY APPARATUS 审中-公开红色表面发射激光元件，图像形成装置和图像显示装置公开(公告)号：US20100322669A1
公开(公告)日：2010-12-23
申请号：US12873071
申请日：2010-08-31
Applicant: Tetsuya Takeuchi , Mamoru Uchida , Tomoyuki Miyamoto , Fumio Koyama
Inventor： Tetsuya Takeuchi , Mamoru Uchida , Tomoyuki Miyamoto , Fumio Koyama
CPC classification number: H01S5/34326 , B82Y20/00 , H01S5/021 , H01S5/1039 , H01S5/18313 , H01S5/18358 , H01S5/2009 , H01S5/2013 , H01S5/2201 , H01S5/3072 , H01S5/3213 , H01S5/3436
Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.
Abstract translation: 红色表面发射激光器元件包括第一反射器，包括p型半导体多层膜的第二反射器，第一反射器和第二反射器之间的有源层以及有源层和第二反射器之间的p型半导体间隔层 反射器，p型半导体间隔层的厚度为100nm以上且350nm以下。
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Patent Agency Ranking
56.发明授权Surface emitting laser, surface emitting laser array, and image forming apparatus including surface emitting laser 有权表面发射激光器，表面发射激光器阵列和包括表面发射激光器的成像设备公开(公告)号：US07839913B2
公开(公告)日：2010-11-23
申请号：US12272033
申请日：2008-11-17
Applicant: Takeshi Uchida , Tetsuya Takeuchi
Inventor： Takeshi Uchida , Tetsuya Takeuchi
IPC: H01S5/00
CPC classification number: G03G15/326 , G03G15/04072 , G03G2215/0404 , H01S5/024 , H01S5/02461 , H01S5/18313 , H01S5/18358 , H01S5/423 , H01S2301/166 , H01S2301/173
Abstract: A surface emitting laser that oscillates at a wavelength λ includes an upper reflector, a lower reflector, an active layer, and a spacer layer. The spacer layer is a laminated structure that includes a first semiconductor sublayer having a composition of AlxGa1-xAs (1≧x>0) and a second semiconductor sublayer having a composition of AlyGa1-yAs (1>y>0 and x>y).
Abstract translation: 以波长λ振荡的表面发射激光器包括上反射器，下反射器，有源层和间隔层。 间隔层是包括具有Al x Ga 1-x As（1≥x> 0）的组成的第一半导体子层和具有Al y Ga 1-y As（1> y> 0和x> y）的组成的第二半导体子层的层叠结构， 。
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57.发明授权Surface-emitting laser and optical apparatus formed by using surface-emitting laser 有权表面发射激光器和使用表面发射激光器形成的光学装置公开(公告)号：US07830944B2
公开(公告)日：2010-11-09
申请号：US12275389
申请日：2008-11-21
Applicant: Tetsuya Takeuchi , Takeshi Uchida
Inventor： Tetsuya Takeuchi , Takeshi Uchida
IPC: H01S3/08
CPC classification number: H01S5/18358 , B82Y20/00 , H01S5/1039 , H01S5/34326 , H01S2301/163
Abstract: A surface-emitting laser has an active layer between a first distributed Bragg reflector and a second distributed Bragg reflector. The first distributed Bragg reflector is formed so as to have a resonant mode and a first longitudinal mode different from the resonant mode included in the reflectivity stop band and a second longitudinal mode different from the resonant mode and the first longitudinal mode excluded from the reflectivity stop band. Oscillation is suppressed in the first longitudinal mode and in the second longitudinal mode. As a result, the surface-emitting laser can oscillate in a single longitudinal mode, suppressing longitudinal mode hopping.
Abstract translation: 表面发射激光器在第一分布布拉格反射器和第二分布布拉格反射器之间具有有源层。 第一分布布拉格反射器被形成为具有不同于反射阻挡带中包括的谐振模式的谐振模式和第一纵向模式，以及不同于反射阻挡区域的谐振模式和第一纵向模式的第二纵向模式 带。 在第一纵向模式和第二纵向模式中抑制振荡。 结果，表面发射激光器可以以单一纵向模式振荡，抑制纵向模式跳跃。
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58.发明授权Method of measuring film thickness and method of manufacturing semiconductor device 有权测量膜厚度的方法和制造半导体器件的方法公开(公告)号：US07795048B2
公开(公告)日：2010-09-14
申请号：US11409269
申请日：2006-04-24
Applicant: Kazutoshi Izumi , Tetsuya Takeuchi
Inventor： Kazutoshi Izumi , Tetsuya Takeuchi
IPC: H01L21/66
Abstract: A method of measuring a film thickness is disclosed. The method includes a step of forming a ferroelectric capacitor on a substrate, a step of forming an insulating film to cover the ferroelectric capacitor, and a step of optically measuring the thickness of the insulating film on an electrode of the ferroelectric capacitor.
Abstract translation: 公开了一种测量薄膜厚度的方法。 该方法包括在基板上形成铁电电容器的步骤，形成绝缘膜以覆盖铁电电容器的步骤，以及光学测量铁电体电容器的电极上的绝缘膜的厚度的步骤。
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59.发明申请SURFACE EMITTING LASER, MANUFACTURING METHOD OF SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, MANUFACTURING METHOD OF SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY 有权表面发射激光，表面发射激光的制造方法，表面发射激光阵列，表面发射激光阵列的制造方法和包括表面发射激光阵列的光学装置公开(公告)号：US20100027578A1
公开(公告)日：2010-02-04
申请号：US12509632
申请日：2009-07-27
Applicant: Tetsuya Takeuchi
Inventor： Tetsuya Takeuchi
CPC classification number: H01S5/18391 , B82Y20/00 , H01S5/0421 , H01S5/18311 , H01S5/18358 , H01S5/18372 , H01S5/2022 , H01S5/34326
Abstract: A surface emitting laser which is configured by laminating on a substrate a lower reflection mirror, an active layer, and an upper reflection mirror, which includes, in a light emitting section of the upper reflection mirror, a structure for controlling reflectance that is configured by a low reflectance region and a concave high reflectance region formed in the central portion of the low reflectance region, and which oscillates at a wavelength of λ, wherein the upper reflection mirror is configured by a multilayer film reflection mirror based on a laminated structure formed by laminating a plurality of layers, the multilayer film reflection mirror includes a phase adjusting layer which has an optical thickness in the range of λ/8 to 3λ/8 inclusive in a light emitting peripheral portion on the multilayer film reflection mirror, and an absorption layer causing band-to-band absorption is provided in the phase adjusting layer.
Abstract translation: 一种表面发射激光器，其通过在基板上层叠下反射镜，有源层和上反射镜而构成，其包括在上反射镜的发光部中，用于控制由 低反射率区域和凹入的高反射率区域，形成在低反射率区域的中心部分，并且以λ的波长振荡，其中上反射镜由多层膜反射镜构成，基于由 层叠多个层，多层膜反射镜包括在多层膜反射镜的发光周边部分中具有λ/ 8〜3λ/ 8范围内的光学厚度的相位调整层，以及吸收层 在相位调整层中提供带 - 带吸收。
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60.发明申请RED SURFACE EMITTING LASER ELEMENT, IMAGE FORMING DEVICE, AND IMAGE DISPLAY APPARATUS 有权红色表面发射激光元件，图像形成装置和图像显示装置公开(公告)号：US20090252532A1
公开(公告)日：2009-10-08
申请号：US12487619
申请日：2009-06-18
Applicant: Tetsuya Takeuchi , Mamoru Uchida , Tomoyuki Miyamoto , Fumio Koyama
Inventor： Tetsuya Takeuchi , Mamoru Uchida , Tomoyuki Miyamoto , Fumio Koyama
CPC classification number: H01S5/34326 , B82Y20/00 , H01S5/021 , H01S5/1039 , H01S5/18313 , H01S5/18358 , H01S5/2009 , H01S5/2013 , H01S5/2201 , H01S5/3072 , H01S5/3213 , H01S5/3436
Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.
Abstract translation: 红色表面发射激光器元件包括第一反射器，包括p型半导体多层膜的第二反射器，第一反射器和第二反射器之间的有源层以及有源层和第二反射器之间的p型半导体间隔层 反射器，p型半导体间隔层的厚度为100nm以上且350nm以下。
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