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108 条记录 (耗时 0.028 秒)

    METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR
    53.
    发明申请
    METHOD AND SYSTEM FOR TREATMENT OF DEPOSITION REACTOR 审中-公开
    沉积反应器的处理方法和系统

    公开(公告)号：US20160115590A1

    公开(公告)日：2016-04-28

    申请号：US14987420

    申请日：2016-01-04

    申请人： ASM IP Holding B.V.

    发明人： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

    IPC分类号： C23C16/44

    CPC分类号： C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

    摘要： A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

    摘要翻译： 公开了一种用于处理沉积反应器的系统和方法。 该系统和方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺铝的碳化钛膜或铝掺杂的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。

    SYSTEMS AND METHODS FOR DEPOSITION OF MOLYBDENUM FOR SOURCE/DRAIN CONTACTS
    58.
    发明公开
    SYSTEMS AND METHODS FOR DEPOSITION OF MOLYBDENUM FOR SOURCE/DRAIN CONTACTS 审中-公开

    公开(公告)号：US20230298902A1

    公开(公告)日：2023-09-21

    申请号：US18121064

    申请日：2023-03-14

    申请人： ASM IP HOLDING B.V.

    发明人： Jiyeon Kim ,  Petri Raisanen ,  Dong Li ,  Eric James Shero

    IPC分类号： H01L21/3205 ,  H01L29/40 ,  H01L21/02 ,  H01L21/285

    CPC分类号： H01L21/32051 ,  H01L29/401 ,  H01L21/02046 ,  H01L21/28556

    摘要： Disclosed herein are systems and methods method for thin film deposition of molybdenum for source/drain formation. A deposition process may be performed in which the surface is contacted in the reaction chamber with a first oxygen-free molybdenum halide reactant at a first temperature, wherein said contacting with the first oxygen-free molybdenum halide reactant forms at least one layer of molybdenum on the substrate. In some embodiments, the temperature of the reaction chamber may be raised from the first temperature to a second temperature. In some embodiments, the substrate in the reaction chamber may be contacted with a second oxygen-free molybdenum halide reactant at the second temperature, wherein said contacting with the second oxygen-free molybdenum halide reactant forms at least one layer of molybdenum on the substrate. In some embodiments, the deposition at the second temperature may be repeated until a molybdenum-containing film of desired thickness is formed.

    SUBSTRATE SUSCEPTOR USING EDGE PURGING
    60.
    发明申请
    SUBSTRATE SUSCEPTOR USING EDGE PURGING 有权

    公开(公告)号：US20220380895A1

    公开(公告)日：2022-12-01

    申请号：US17816052

    申请日：2022-07-29

    申请人： ASM IP HOLDING B.V.

    发明人： Raj Singu ,  Todd Robert Dunn ,  Carl Louis White ,  Herbert Terhorst ,  Eric James Shero ,  Bhushan Zope

    IPC分类号： C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  H01L21/687

    摘要： A workpiece susceptor body can include a front face configured to support a workpiece, a back face opposite the front face, a workpiece contact zone at least partially forming a support boundary on an inner portion of the front face, and a plurality of axial channels disposed within the susceptor body. The workpiece contact zone can be disposed radially inward of an outer edge of a workpiece positioned on the front face in a processing configuration. Each of the plurality of axial channels may connect to corresponding openings extending into an outer portion of the front face. Each of the openings may be disposed radially outward of the workpiece contact zone of the susceptor body.