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    Solid-state imaging device
    51.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4413283A

    公开(公告)日：1983-11-01

    申请号：US332933

    申请日：1981-12-21

    申请人： Masakazu Aoki ,  Haruhisa Ando ,  Shinya Ohba ,  Iwao Takemoto

    发明人： Masakazu Aoki ,  Haruhisa Ando ,  Shinya Ohba ,  Iwao Takemoto

    IPC分类号： H04N9/07 ,  H04N9/04 ,  H04N3/14

    CPC分类号： H04N9/045 ,  H04N3/1512

    摘要： A solid-state imaging device comprises a plurality of photodiodes arranged in a matrix form in the same semiconductor substrate, horizontal and vertical switching elements for selecting the photodiodes, horizontal and vertical shift registers for supplying scan pulses to the horizontal and vertical switching elements, and an interlace circuit for simultaneously selecting two vertical gate lines to simultaneously read two picture element rows. A buffer circuit is inserted between the interlace circuit and the vertical gate lines for changing a potential level of one of the two selected vertical gate lines from a high level to a low level prior to changing the potential level of the other vertical gate line.

    摘要翻译： 固态成像装置包括在同一半导体衬底中以矩阵形式布置的多个光电二极管，用于选择光电二极管的水平和垂直开关元件，用于向水平和垂直开关元件提供扫描脉冲的水平和垂直移位寄存器，以及 用于同时选择两条垂直栅极线以同时读取两个像素行的隔行电路。 在隔行电路和垂直栅极线之间插入缓冲电路，用于在改变另一垂直栅极线的电位电平之前将两个所选择的垂直栅极线之一的电位电平从高电平改变为低电平。

    Solid-state imaging device
    52.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4316205A

    公开(公告)日：1982-02-16

    申请号：US119383

    申请日：1980-02-07

    申请人： Masakazu Aoki ,  Iwao Takemoto ,  Masaharu Kubo ,  Ryuichi Izawa

    发明人： Masakazu Aoki ,  Iwao Takemoto ,  Masaharu Kubo ,  Ryuichi Izawa

    IPC分类号： H01L27/146 ,  H01L31/113 ,  H04N5/335 ,  H04N5/374 ,  H01L27/14

    CPC分类号： H01L31/1136 ,  H01L27/14643

    摘要： In a solid-state imaging device having in one major surface region of a monolithic semiconductor body, photodiodes which are arrayed in two dimensions, vertical switching MOS transistors and horizontal switching MOS transistors which address the photodiodes, MOS transistors which constitute vertical and horizontal scanning circuits for turning "on" and "off" the switching MOS transistors, and MOS transistors which constitute other peripheral circuitry, the photodiodes being constructed of source regions of the vertical switching MOS transistors and the semiconductor body; a solid-state imaging device characterized in that among source and drain regions of the various MOS transistors, the source regions of the vertical switching MOS transistors are lower in the surface impurity concentration and deeper in the junction depth than the other source and drain regions.

    摘要翻译： 在具有单片半导体主体的一个主表面区域的固态成像装置中，以二维排列的光电二极管，构成光电二极管的垂直开关MOS晶体管和水平开关MOS晶体管，构成垂直和水平扫描电路的MOS晶体管 为了使开关MOS晶体管“开”和“关”，构成其它外围电路的MOS晶体管，该光电二极管由垂直开关MOS晶体管和半导体本体的源极区构成; 一种固态成像装置，其特征在于，在各种MOS晶体管的源极和漏极区域中，垂直开关MOS晶体管的源极区域的表面杂质浓度较低，并且结深度比其他源极和漏极区域更深。

    Solid-state imaging device
    53.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4301477A

    公开(公告)日：1981-11-17

    申请号：US120115

    申请日：1980-02-11

    申请人： Iwao Takemoto ,  Masaharu Kubo ,  Shinya Ohba ,  Shuhei Tanaka ,  Masakazu Aoki

    发明人： Iwao Takemoto ,  Masaharu Kubo ,  Shinya Ohba ,  Shuhei Tanaka ,  Masakazu Aoki

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/365 ,  H04N5/374 ,  H04N5/30 ,  H04N3/14

    CPC分类号： H04N5/2173 ,  H01L27/14643 ,  H04N3/1568

    摘要： In a solid-state imaging device comprising photodiodes arranged in a two-dimensional array, vertical and horizontal switching MOS transistors for selecting the photodiodes, vertical and horizontal scanning circuits for supplying scanning pulses to the gate electrodes of the vertical and horizontal switching MOS transistors respectively, a signal switching gate MOS transistor is connected between a signal output terminal and a horizontal signal output line connecting in common the horizontal switching MOS transistors.

    摘要翻译： 在包括以二维阵列布置的光电二极管的固态成像装置中，用于选择光电二极管的垂直和水平切换MOS晶体管，分别向垂直和水平开关MOS晶体管的栅电极提供扫描脉冲的垂直和水平扫描电路 信号切换栅极MOS晶体管连接在水平开关MOS晶体管共同连接的信号输出端子和水平信号输出线之间。

    Solid-state imaging device
    54.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4209806A

    公开(公告)日：1980-06-24

    申请号：US928734

    申请日：1978-07-27

    申请人： Norio Koike ,  Iwao Takemoto ,  Toshiyuki Akiyama ,  Haruhisa Ando ,  Shinya Ohba ,  Masatada Horiuchi ,  Masaharu Kubo

    发明人： Norio Koike ,  Iwao Takemoto ,  Toshiyuki Akiyama ,  Haruhisa Ando ,  Shinya Ohba ,  Masatada Horiuchi ,  Masaharu Kubo

    IPC分类号： H01L27/088 ,  H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/372 ,  H04N5/374 ,  H04N3/14 ,  H01L27/14 ,  H01L29/78

    CPC分类号： H01L27/14643 ,  H01L27/088

    摘要： In a solid-state imaging device wherein a plurality of photoelectric conversion elements, horizontal and vertical scanning circuits for addressing the photoelectric conversion elements, and horizontal and vertical switching transistors are comprised in a major surface region of an N (or P)-type semiconductor body, a solid-state imaging device characterized in that a plurality of P (or N)-type impurity layers isolated from one another are disposed in the major surface region of the semiconductor body, that the switching transistors and the photoelectric conversion elements are integrated in one of the impurity layers, the horizontal scanning circuit being integrated in another impurity layer, the vertical scanning circuit being integrated in still another impurity layer, and that predetermined voltages are applied to electrodes disposed on the respective impurity layers.

    摘要翻译： 在其中多个光电转换元件，用于寻址光电转换元件的水平和垂直扫描电路以及水平和垂直开关晶体管的固态成像器件包括在N（或P）型半导体的主表面区域中 其特征在于，在所述半导体主体的主表面区域设置有彼此隔离的多个P（或N）型杂质层，所述开关晶体管和所述光电转换元件被集成 在一个杂质层中，水平扫描电路集成在另一个杂质层中，垂直扫描电路集成在另一个杂质层中，并且预定电压施加到设置在各个杂质层上的电极。

    Solid-state imaging device
    55.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4148048A

    公开(公告)日：1979-04-03

    申请号：US871252

    申请日：1978-01-23

    申请人： Iwao Takemoto ,  Norio Koike ,  Masaharu Kubo

    发明人： Iwao Takemoto ,  Norio Koike ,  Masaharu Kubo

    IPC分类号： H01L27/146 ,  H01L27/14

    CPC分类号： H01L27/14645 ,  H01L27/14654

    摘要： A solid-state imaging device contains a photoelectric part in which a plurality of picture elements each consisting of a photodiode and a switching transistor are arranged in two dimensions. The picture elements are disposed on the same semiconductor substrate, and scanning circuits which scan the switching transistors of the photoelectric part in succession are provided. The solid-state imaging device further comprises a semiconductor layer which has a conductivity type opposite to that of the semiconductor substrate and which is disposed in one major surface of the semiconductor substrate and means for applying a reverse bias between the semiconductor layer and the semiconductor substrate. At least the photoelectric part is disposed within the semiconductor layer, and a high impurity concentration region which has the same conductivity type as that of the semiconductor layer and is disposed at least under a part of the photodiode.

    摘要翻译： 固态成像装置包括其中由光电二极管和开关晶体管组成的多个像素二维布置的光电部件。 图像元素设置在相同的半导体衬底上，并且连续地扫描光电部件的开关晶体管的扫描电路被设置。 固态成像装置还包括半导体层，其具有与半导体衬底的导电类型相反的导电类型，并且设置在半导体衬底的一个主表面中;以及用于在半导体层和半导体衬底之间施加反向偏压的装置 。 至少光电部件设置在半导体层内，高浓度区域具有与半导体层相同的导电类型，并且至少设置在光电二极管的一部分下方。

    Liquid crystal display device having stabilized drive circuit
    56.
    发明授权
    Liquid crystal display device having stabilized drive circuit 有权
    液晶显示装置具有稳定的驱动电路

    公开(公告)号：US07492340B2

    公开(公告)日：2009-02-17

    申请号：US11385741

    申请日：2006-03-22

    申请人： Hironobu Isami ,  Iwao Takemoto ,  Katsumi Matsumoto

    发明人： Hironobu Isami ,  Iwao Takemoto ,  Katsumi Matsumoto

    IPC分类号： G09G3/36

    CPC分类号： G09G3/2011 ,  G09G3/3648 ,  G09G3/3655 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2310/0259 ,  G09G2310/027

    摘要： A liquid crystal display device has a liquid crystal display panel and a drive circuit for supplying gray scale voltages to pixels in the liquid crystal display panel. The drive circuit selects intended gray scale voltage levels from a gray scale voltage varying with time periodically by determining a timing corresponding to the intended voltage level of the gray scale voltage based upon a display data signal and time control signals supplied to the drive circuit. A stabilizer circuit is provided to a gray scale voltage line for supplying the gray scale voltage.

    摘要翻译： 液晶显示装置具有用于向液晶显示面板中的像素提供灰度电压的液晶显示面板和驱动电路。 驱动电路基于显示数据信号和提供给驱动电路的时间控制信号，通过确定与灰度级电压的预期电压电平相对应的定时，从周期性变化的灰度级电压中选择期望的灰度级电压电平。 将稳定电路提供给用于提供灰度电压的灰度电压线。

    Polarization direction of incident light beam perpendicular or parallel to liquid display molecular orientation for reduced drive voltage
    58.
    发明授权
    Polarization direction of incident light beam perpendicular or parallel to liquid display molecular orientation for reduced drive voltage 有权
    入射光束的偏振方向垂直或平行于液体显示分子取向，以降低驱动电压

    公开(公告)号：US07352416B2

    公开(公告)日：2008-04-01

    申请号：US10082113

    申请日：2002-02-26

    申请人： Shoichi Hirota ,  Makoto Tsumura ,  Iwao Takemoto ,  Hideki Nakagawa ,  Satoshi Ouchi ,  Taro Imahase

    发明人： Shoichi Hirota ,  Makoto Tsumura ,  Iwao Takemoto ,  Hideki Nakagawa ,  Satoshi Ouchi ,  Taro Imahase

    IPC分类号： G02F1/1335

    CPC分类号： H04N9/3105 ,  G02F1/133528 ,  G02F1/133553 ,  G02F1/1393 ,  G02F2203/50

    摘要： A liquid crystal display element comprising two transparent substrates, at least one of which is transparent, and a liquid crystal layer interposed between the two substrates. A plurality of pixels and active elements for driving the liquid crystal at the plurality of pixels are incorporated into at least one of the two substrates, and an optical axis of an incident light beam upon the liquid crystal layer is present in a plane which is substantially perpendicular to a direction of orientation of liquid crystal molecules on at least one of the two substrates, and the incident light impinges upon the liquid crystal layer in a direction which is inclined by a predetermined angle to the direction of the normal line of the substrate. With this arrangement, a desired phase modulation is obtained through slight motion of the liquid crystal molecules, thereby greatly reducing the liquid crystal drive voltage.

    摘要翻译： 一种液晶显示元件，包括两个透明基板，其中至少一个是透明的，以及夹在两个基板之间的液晶层。 用于驱动多个像素处的液晶的多个像素和有源元件被结合到两个基板中的至少一个中，并且在液晶层上的入射光束的光轴存在于基本上 垂直于两个基板中的至少一个上的液晶分子的取向方向，并且入射光沿与基板的法线方向倾斜预定角度的方向撞击在液晶层上。 通过这种布置，通过液晶分子的轻微运动获得期望的相位调制，从而大大降低了液晶驱动电压。

    Output circuit for a CCD with a D.C. restoration circuit integrated together with the CCD in a monolithic semiconductor chip
    60.
    发明授权
    Output circuit for a CCD with a D.C. restoration circuit integrated together with the CCD in a monolithic semiconductor chip 失效
    具有D.C.恢复电路的CCD与CCD在单片半导体芯片中集成的输出电路

    公开(公告)号：US5220587A

    公开(公告)日：1993-06-15

    申请号：US799142

    申请日：1991-11-27

    申请人： Iwao Takemoto ,  Tatsuhisa Fujii ,  Atsushi Hasegawa

    发明人： Iwao Takemoto ,  Tatsuhisa Fujii ,  Atsushi Hasegawa

    IPC分类号： H01L27/148 ,  H01L21/339 ,  H01L29/762 ,  H03F3/193 ,  H03K5/02 ,  H03K19/0944

    CPC分类号： H04N5/361 ,  H03F3/193 ,  H03K5/026 ,  H04N5/3575 ,  H04N5/372 ,  H04N5/378

    摘要： An amplification MOSFET in a source ground form receives at its gate an output signal of a source-follower circuit through a second capacitor. The source-follower circuit, on the otherhand, receives a voltage of a first capacitor which receives a signal charge. A predetermined bias voltage is supplied to the gate of the amplification MOSFET through a switch device while the signal charge of the first capacitor is reset. According to this structure, the second capacitor can transmit only the signal component and the voltage signal itself can be amplified by the source ground type amplification MOSFET. The amplification MOSFET can be biased to its optimum operation point by the switch device during the reset period of the first capacitor; hence, sensitivity can be substantially improved with a simple circuit structure.

    摘要翻译： 源极接地形式的放大MOSFET通过第二个电容器在其栅极接收源极跟随器电路的输出信号。 另一方面，源跟随器电路接收接收信号电荷的第一电容器的电压。 当第一电容器的信号电荷被复位时，通过开关装置将预定的偏置电压提供给放大MOSFET的栅极。 根据该结构，第二电容器只能传输信号分量，电压信号本身可以由源极接地型放大MOSFET放大。 在第一电容器的复位期间，放大MOSFET可以被开关器件偏置到其最佳工作点; 因此，通过简单的电路结构可以显着提高灵敏度。