摘要:
A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.
摘要:
A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.
摘要:
A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.
摘要:
A plasma reactor comprises a chamber, a bottom electrode, a top electrode, a first set of confinement rings, a second set of confinement rings, and a ground extension. The top and bottom electrodes, the first and second sets of confinement rings, and the ground extension are all enclosed within the chamber. The first set of confinement rings is substantially parallel to the bottom electrode and the top electrode and surrounds a first volume between the bottom electrode and the top electrode. The second set of confinement rings is substantially parallel to the bottom electrode and the top electrode and surrounds a second volume between the bottom electrode and the top electrode. The second volume is at least greater than the first volume. A ground extension is adjacent to and surrounds the bottom electrode. The first set of confinement rings and the second set of confinement rings are capable of being raised and lowered to extend into a region above the ground extension.
摘要:
An electronic system having a sandwich design and including two carriers, each carrier having a printed circuit layer, the upper printed circuit layer being positioned on different planes.
摘要:
A method for reducing wafer damage during an etching process is provided. In one of the many embodiments, the method includes assigning a bias voltage to each of at least one etching process, and generating the assigned bias voltage before initiation of one of the at least one etching process. The method further includes applying the assigned bias voltage to an electrostatic chuck before initiation of one of the at least one etching processes. The assigned bias voltage level reduces wafer arcing.
摘要:
A rotary atomizer applies particulate paints with good color matching by reducing paint droplet size deviation and then optimizing the other paint spraying parameters. Paint droplet size parameters are reduced by using a bell cup having reduced flow deviations, including an overflow surface having a generally constant angle between a deflector and an atomizing edge.
摘要:
A segmented radio frequency (RF) powered electrode for use in plasma processing. The electrode includes a first electrode, a second electrode surrounding the first electrode, and a dielectric material interposed between the first electrode and the second electrode. The dielectric material electrically isolates the first electrode from the second electrode. At least one dual frequency radio frequency power source outputs RF power at a first frequency and a second frequency. The first frequency and the second frequency are different such that at least one radio frequency switch routes at least the first frequency or the second frequency from the at least one dual frequency source to the first electrode, the second electrode, or the first electrode and the second electrode.
摘要:
A assembly support (33) of a front end of a motor vehicle is proposed, having at least one cooling module (1) which is detachably fixed to the assembly support (33) by means of at least two connecting points (9, 15; 11, 13). The assembly support (33) is characterized in that one of the connecting points (9; 11) is embodied as a pivot bearing (17; 19), and in that the other of the connecting points (13; 15) is embodied as a clip connection (21; 23). In addition, a method for detachably fixing a cooling module (1) to a assembly support (33) of a front end of a motor vehicle is proposed.
摘要:
In a vacuum processing chamber, a monitoring arrangement for detecting when a substrate is sufficiently dechucked by an electrostatic clamp to allow safe movement thereof by a transfer mechanism such as a pin lifter. The monitoring arrangement includes an acoustic generator which outputs a sound wave at the resonant frequency of the substrate and the dechucking condition is detected when the sound wave is adsorbed by the substrate. The arrangement can be used during processing of wafers such as plasma etching or chemical vapor deposition.