公开(公告)号：US08781213B2

公开(公告)日：2014-07-15

申请号：US13302308

申请日：2011-11-22

申请人： Robert L. Hsieh ,  Khiem Nguyen ,  Warren W. Flack ,  Andrew M. Hawryluk

发明人： Robert L. Hsieh ,  Khiem Nguyen ,  Warren W. Flack ,  Andrew M. Hawryluk

IPC分类号： G06K9/00 ,  G03F9/00 ,  H01L33/22

CPC分类号： G03F9/7084 ,  G03F9/7065 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7088 ,  H01L33/22

摘要： An alignment system for aligning a wafer when lithographically fabricating LEDs having an LED wavelength λLED is disclosed. The system includes the wafer. The wafer has a roughened alignment mark with a root-mean-square (RMS) surface roughness σS. The system has a lens configured to superimpose an image of the reticle alignment mark with an image of the roughened alignment mark. The roughened alignment marked image is formed with alignment light having a wavelength λA that is in the range from about 2σS to about 8σS. An image sensor detects the superimposed image. An image processing unit processes the detected superimposed image to measure an alignment offset between the wafer and the reticle.

摘要翻译： 公开了一种用于在光刻制造具有LED波长λLED的LED的晶片时对准晶片的对准系统。 该系统包括晶片。 晶片具有粗糙的对准标记，均方根（RMS）表面粗糙度S。 该系统具有配置为用掩模版对准标记的图像叠加掩模版对准标记的图像的透镜。 粗糙的对准标记图像由波长λA为约2＆Sgr; S至约8＆Sgr; S的对准光形成。 图像传感器检测叠加图像。 图像处理单元处理检测到的叠加图像以测量晶片和标线片之间的对准偏移。

公开(公告)号：US20140049978A1

公开(公告)日：2014-02-20

申请号：US13588750

申请日：2012-08-17

申请人： David G. Stites ,  Andrew M. Hawryluk

发明人： David G. Stites ,  Andrew M. Hawryluk

IPC分类号： F21V5/04

CPC分类号： G03F7/201 ,  G03F7/70391 ,  H01L25/0753 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2924/00

摘要： An LED-based photolithographic illuminator with high collection efficiency is disclosed. The illuminator utilizes an array of LEDs, wherein each LED has an LED die and a heat sink. The LED dies are imaged onto the input end of a homogenizer rod to substantially cover the input end without inclusion of the non-light-emitting heat sink sections of the LED. A microlens array is used to image the LED dies. The collection efficiency of the illuminator is better than 50% and the illumination uniformity at the output end of the light homogenizer is within +/−2%.

摘要翻译： 公开了一种具有高收集效率的基于LED的光刻照明器。 照明器利用一系列LED，其中每个LED具有LED管芯和散热器。 将LED管芯成像到均质棒的输入端上，以基本上覆盖输入端，而不包括LED的非发光散热片部分。 使用微透镜阵列对LED管芯进行成像。 照明器的收集效率优于50％，光均质器输出端的照明均匀度在+/- 2％以内。

公开(公告)号：US20120223062A1

公开(公告)日：2012-09-06

申请号：US13472383

申请日：2012-05-15

申请人： Andrew M. Hawryluk

发明人： Andrew M. Hawryluk

IPC分类号： H01L21/268 ,  B23K26/00

CPC分类号： H01L21/268 ,  B23K26/0738 ,  B23K26/0853 ,  B23K26/352 ,  B23K26/354 ,  B23K2101/40 ,  H01L21/28044

摘要： Apparatuses and methods are provided for processing a surface of a substrate. The substrate may have a surface pattern that exhibits directionally and/or orientationally different reflectivities relative to radiation of a selected wavelength and polarization. The apparatus may include a radiation source that emits a photonic beam of the selected wavelength and polarization directed toward the surface at orientation angle and incidence angle selected to substantially minimize substrate surface reflectivity variations and/or minimize the maximum substrate surface reflectivity during scanning. Also provided are methods and apparatuses for selecting an optimal orientation and/or incidence angle for processing a surface of a substrate.

摘要翻译： 提供了用于处理基底表面的装置和方法。 衬底可以具有相对于所选波长和偏振的辐射呈现方向和/或取向不同的反射率的表面图案。 该装置可以包括发射所选波长的光子束的辐射源，并且以定向角和入射角定位朝向表面的极化，其被选择为基本上最小化衬底表面反射率变化和/或最小化扫描期间的最大衬底表面反射率。 还提供了用于选择用于处理衬底的表面的最佳取向和/或入射角的方法和装置。

公开(公告)号：US20120111838A1

公开(公告)日：2012-05-10

申请号：US13347618

申请日：2012-01-10

申请人： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk ,  James T. McWhirter ,  Serguei G. Anikitchev

发明人： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk ,  James T. McWhirter ,  Serguei G. Anikitchev

IPC分类号： H01L21/324 ,  B23K26/08 ,  B23K26/12 ,  B23K26/00

CPC分类号： B23K26/0608 ,  B23K26/073 ,  B23K26/082 ,  B23K26/083 ,  H01L21/268

摘要： Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a scan path. A first image may serve to effect spike annealing of the substrates while another may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers. Also provided are microelectronic devices formed using the inventive apparatuses and methods.

摘要翻译： 提供了用于衬底表面的热处理的装置和方法，例如衬底的受控激光热退火（LTA）。 本发明通常包括用基板表面照射第一和第二图像，以沿着扫描路径的基本均匀的峰值处理温度处理基板表面的区域。 第一图像可以用于实现基板的尖峰退火，而另一个可以用于在尖峰退火之前和/或之后向基板提供辅助热处理。 控制预压和/或后刺的温度分布也可以减少在晶片中产生的应力和应变。 还提供了使用本发明的装置和方法形成的微电子器件。

公开(公告)号：US08088633B2

公开(公告)日：2012-01-03

申请号：US12592735

申请日：2009-12-02

申请人： Robert L. Hsieh ,  Khiem Nguyen ,  Warren W. Flack ,  Andrew M. Hawryluk

发明人： Robert L. Hsieh ,  Khiem Nguyen ,  Warren W. Flack ,  Andrew M. Hawryluk

IPC分类号： G01R31/26 ,  H01L21/66 ,  H01L21/00 ,  G06K9/00 ,  H01L23/544 ,  B23K26/00 ,  B23K26/02 ,  B23K26/08 ,  F27D11/00

CPC分类号： G03F9/7084 ,  G03F9/7065 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7088 ,  H01L33/22

摘要： A method of aligning a wafer when lithographically fabricating a light-emitting diode (LED). The method includes forming on the wafer at least one roughened alignment mark having a root-mean-square (RMS) surface roughness σS. The roughened alignment mark is formed as a consequence of forming a plasma etch to roughen a LED surface on which the wafer alignment mark resides. The method also includes imaging the at least one roughened wafer alignment mark with alignment light having a wavelength λA that is in the range from about 2σS to about 8σS. The method also includes comparing the detected image to an alignment reference to establish wafer alignment. Once wafer alignment is established, p-contacts and n-contacts can be formed on the LED upper surface in their proper locations.

摘要翻译： 在光刻制造发光二极管（LED）时对准晶片的方法。 该方法包括在晶片上形成至少一个具有均方根（RMS）表面粗糙度S的粗糙对准标记。 作为形成等离子体蚀刻以粗糙化晶片对准标记所在的LED表面的结果，形成粗糙化的对准标记。 该方法还包括用波长λA为约2至约8微米的对准光对至少一个粗糙化的晶片对准标记进行成像。 该方法还包括将检测到的图像与对准基准进行比较以建立晶片对准。 一旦晶圆对准建立，p型触点和n型触点就可以在它们正确位置的LED上表面上形成。

公开(公告)号：US20110298093A1

公开(公告)日：2011-12-08

申请号：US13210310

申请日：2011-08-15

申请人： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk ,  James T. McWhirter ,  Serguei G. Anikitchev

发明人： Arthur W. Zafiropoulo ,  Andrew M. Hawryluk ,  James T. McWhirter ,  Serguei G. Anikitchev

IPC分类号： H01L21/324 ,  H01L29/02

CPC分类号： B23K26/0608 ,  B23K26/073 ,  B23K26/082 ,  B23K26/083 ,  H01L21/268

摘要： Provided are apparatuses and method for the thermal processing of a substrate surface, e.g., controlled laser thermal annealing (LTA) of substrates. The invention typically involves irradiating the substrate surface with first and second images to process regions of the substrate surface at a substantially uniform peak processing temperature along a scan path. A first image may serve to effect spike annealing of the substrates while another may be used to provide auxiliary heat treatment to the substrates before and/or after the spike annealing. Control over the temperature profile of the prespike and/or postspike may also reduce stresses and strains generated in the wafers. Also provided are microelectronic devices formed using the inventive apparatuses and methods.

摘要翻译： 提供了用于衬底表面的热处理的装置和方法，例如衬底的受控激光热退火（LTA）。 本发明通常包括用基板表面照射第一和第二图像，以沿着扫描路径的基本均匀的峰值处理温度处理基板表面的区域。 第一图像可以用于实现基板的尖峰退火，而另一个可以用于在尖峰退火之前和/或之后向基板提供辅助热处理。 控制预压和/或后刺的温度分布也可以减少在晶片中产生的应力和应变。 还提供了使用本发明的装置和方法形成的微电子器件。

公开(公告)号：US07514305B1

公开(公告)日：2009-04-07

申请号：US11476275

申请日：2006-06-28

申请人： Andrew M. Hawryluk ,  Boris Grek ,  David A. Markle

发明人： Andrew M. Hawryluk ,  Boris Grek ,  David A. Markle

IPC分类号： H01L21/00

CPC分类号： H01L21/2636 ,  H01L21/67115 ,  H01L21/67248

摘要： Methods and apparatuses are provided for improving the intensity profile of a beam image used to process a semiconductor substrate. At least one photonic beam may be generated and manipulated to form an image having an intensity profile with an extended uniform region useful for thermally processing the surface of the substrate. The image may be scanned across the surface to heat at least a portion of the substrate surface to achieve a desired temperature within a predetermined dwell time. Such processing may achieve a high efficiency due to the large proportion of energy contained in the uniform portion of the beam.

摘要翻译： 提供了用于改善用于处理半导体衬底的光束图像的强度分布的方法和装置。 可以产生和操纵至少一个光子束以形成具有强度分布的图像，其具有用于热处理基板的表面的延伸的均匀区域。 可以跨越表面扫描图像以加热衬底表面的至少一部分以在预定的停留时间内实现期望的温度。 这种处理可以由于束的均匀部分中包含的大量能量而实现高效率。

公开(公告)号：US06825101B1

公开(公告)日：2004-11-30

申请号：US09536927

申请日：2000-03-27

申请人： Andrew M. Hawryluk ,  David A. Markle ,  Somit Talwar

发明人： Andrew M. Hawryluk ,  David A. Markle ,  Somit Talwar

IPC分类号： H01L2120

CPC分类号： H01L21/324 ,  H01J2237/316 ,  H01L21/263 ,  H01L21/2636 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/26513

摘要： A method of this invention includes annealing at least one region of a substrate with a short pulse of particles. The particles can be electrons, protons, alpha particles, other atomic or molecular ions or neutral atoms and molecules. The substrate can be composed of a semiconductor material, for example. The particles can include dopant atoms such as p-type dopant atoms such as boron (B), aluminum (Al), gallium (Ga), or indium (In), and n-type dopant atomic species including arsenic (As), phosphorus (P), or antimony (Sb). The particles can also include silicon (Si) or germanium (Ge) atoms or ionized gas atoms including those of hydrogen (He), oxygen (O), nitrogen (N), neon (Ne), argon (Ar), or krypton (Kr). The particles can be used to anneal dopant atoms previously implanted into the substrate. Alternatively, the particle species can be chosen to include the desired implant dopant, the energy of the particle may be chosen to achieve the desired implant depth, and the energy, dose and pulse duration may be chosen to anneal the implanted region during the pulse. This embodiment of the method performs implantation and activation in a single step. If no change in the electrical state of the substrate is required, the particles can include silicon (Si), and germanium (Ge) atoms.

摘要翻译： 本发明的方法包括用短脉冲的颗粒退火衬底的至少一个区域。 颗粒可以是电子，质子，α粒子，其他原子或分子离子或中性原子和分子。 例如，基板可以由半导体材料构成。 颗粒可以包括诸如硼（B），铝（Al），镓（Ga）或铟（In）的p型掺杂剂原子的掺杂剂原子，以及包括砷（As），磷 （P）或锑（Sb）。 这些颗粒还可以包括硅（Si）或锗（Ge）原子或包括氢（He），氧（O），氮（N），氖（Ne），氩（Ar）或氪 Kr）。 颗粒可以用于退火以前植入衬底中的掺杂剂原子。 或者，可以选择粒子物种以包括所需的注入掺杂剂，可以选择粒子的能量以实现期望的注入深度，并且可以选择能量，剂量和脉冲持续时间以在脉冲期间退火注入区域。 该方法的该实施例在单个步骤中执行植入和激活。 如果不需要基板的电气状态的变化，则颗粒可以包括硅（Si）和锗（Ge）原子。

公开(公告)号：US06554464B1

公开(公告)日：2003-04-29

申请号：US09505268

申请日：2000-02-16

申请人： Andrew M. Hawryluk ,  Yu Chue Fong ,  David G. Stites ,  Weijian Wang

发明人： Andrew M. Hawryluk ,  Yu Chue Fong ,  David G. Stites ,  Weijian Wang

IPC分类号： F21V800

CPC分类号： G02B27/0994 ,  G02B27/09

摘要： A light tunnel (24) comprising a hollow light tunnel body (30) or a solid light tunnel body (80) having a central axis (A1 or A2), a reflective surface (42 or 84) facing the axis, and an output end (54 or 94) having an edge (60 or 106) with a chamfered surface (120 or 130) formed on the edge. The chamfered surface is designed to alter the reflective properties of the reflective surfaces of the light tunnel body near the output end so as to reduce or eliminate edge ringing from the light tunnel body edge. In the case of a knife-edge (340) placed at the output end of the light tunnel body, knife-edge ringing is eliminated by providing a light source (310) in the form of a laser with a large number of spatial modes (M2>30). The present invention is expected to be most useful in cases where time-averaging or other interference-eliminating means prove impossible or impractical, such as with applications requiring only one or a few high-irradiance light pulses that need to uniformly irradiate a workpiece.

摘要翻译： 包括中空光通道体（30）或具有中心轴线（A1或A2）的固体光通道体（80）的光通道（24），面向轴线的反射表面（42或84）和输出端 （54或94）具有边缘（60或106），其边缘上形成有倒角表面（120或130）。 倒角表面被设计成改变在输出端附近的光通道体的反射表面的反射特性，以便减少或消除从光通道体边缘的边缘振铃。 在设置在光通道体的输出端的刀刃（340）的情况下，通过提供具有大量空间模式的激光器形式的光源（310）来消除刀刃振铃（ M2> 30）。 在时间平均或其他干扰消除装置证明是不可能或不切实际的情况下，预期本发明是最有用的，例如需要仅需要一个或几个需要均匀照射工件的高辐照光脉冲的应用。

公开(公告)号：US06326219B2

公开(公告)日：2001-12-04

申请号：US09286492

申请日：1999-04-05

申请人： David A. Markle ,  Somit Talwar ,  Andrew M. Hawryluk

发明人： David A. Markle ,  Somit Talwar ,  Andrew M. Hawryluk

IPC分类号： H01L2100

CPC分类号： H01L29/66575 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/28079 ,  H01L21/324

摘要： The invention is directed to methods for determining the wavelength, pulse length and other important characteristics of radiant energy used to anneal or to activate the source and drain regions of an integrated transistor device which has been doped through implantation of dopant ions, for example. In general, the radiant energy pulse is determined to have a wavelength from 450 to 900 nanometers, a pulse length of 0.1 to 50 nanoseconds, and an exposure energy dose of from 0.1 to 1.0 Joules per square centimeter. A radiant energy pulse of the determined wavelength, pulse length and energy dose is directed onto the source and drain regions to trigger activation. In cases where the doped region has been rendered amorphous, activation requires crystallization using the crystal structure at the boundaries as a seed. In this case the radiant energy pulse causes the source and drain regions to crystallize with the same crystallographic orientation as the underlying substrate with the dopant ions incorporated into the crystalline lattice so that the source and drain regions are activated. To enhance absorption of the radiant energy used for annealing the doped regions, an anti-reflective layer can be formed over the doped regions before exposure. The radiant energy can be generated by a laser or other relatively intense, pulsed, radiant energy source. Selection of the source should be based on efficiency, the ability to distribute energy uniformly over an extended area and the ability to accurately control the energy content of a single pulse.

摘要翻译： 本发明涉及用于确定用于退火或激活已经通过注入掺杂剂离子掺杂的集成晶体管器件的源极和漏极区域的辐射能的波长，脉冲长度和其它重要特性的方法。 通常，辐射能脉冲被确定为具有450-900纳米的波长，0.1至50纳秒的脉冲长度和0.1至1.0焦耳/平方厘米的曝光能量。 所确定的波长，脉冲长度和能量剂量的辐射能量脉冲被引导到源极和漏极区域以触发激活。 在掺杂区域变为无定形的情况下，活化需要使用边界处的晶体结构作为晶种进行结晶。 在这种情况下，辐射能量脉冲导致源极和漏极区域以与底部衬底相同的晶体取向结晶，掺杂剂离子结合到晶格中，使得源极和漏极区域被激活。 为了增强用于退火掺杂区域的辐射能的吸收，可以在曝光之前在掺杂区域上形成抗反射层。 辐射能可以由激光或其他相对强烈的脉冲辐射能源产生。 源的选择应基于效率，均匀分布在扩展区域上的能力以及准确控制单脉冲能量含量的能力。