公开(公告)号：US09012311B2

公开(公告)日：2015-04-21

申请号：US12170470

申请日：2008-07-10

申请人： Frank Pfirsch ,  Hans-Joachim Schulze

发明人： Frank Pfirsch ,  Hans-Joachim Schulze

IPC分类号： H01L21/425 ,  H01L29/167 ,  H01L21/22 ,  H01L21/265 ,  H01L29/06 ,  H01L29/08 ,  H01L29/36 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

CPC分类号： H01L29/0623 ,  H01L21/221 ,  H01L21/26506 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/36 ,  H01L29/66348 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/861 ,  H01L29/8611

摘要： In a method for producing a semiconductor body, impurities which act as recombination centers in the semiconductor body and form a recombination zone are introduced into the semiconductor body during the process of producing the semiconductor body. In a semiconductor component, comprising a semiconductor body having a front surface and an opposite rear surface, and also a recombination zone formed by impurities between the front and rear surfaces, wherein the impurities act as recombination centers, the surface state density at the front and rear surfaces of the semiconductor body is just as high as the surface state density at a front and rear surface of an identical semiconductor body without a recombination zone.

摘要翻译： 在制造半导体体的方法中，在制造半导体体的过程中，在半导体本体中作为复合中心并形成复合区的杂质被引入半导体本体。 在半导体元件中，包括具有前表面和相对后表面的半导体本体，以及由前表面和后表面之间的杂质形成的复合区，其中杂质作为复合中心，前面的表面状态密度和 半导体本体的后表面与没有复合区的同一半导体主体的前表面和后表面的表面状态密度一样高。

公开(公告)号：US08384151B2

公开(公告)日：2013-02-26

申请号：US13007902

申请日：2011-01-17

申请人： Frank Pfirsch

发明人： Frank Pfirsch

IPC分类号： H01L29/66

CPC分类号： H01L29/7395 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7813

摘要： A semiconductor device is provided. The semiconductor device includes a semiconductor body with a base region and a first electrode arranged on a main horizontal surface of the semiconductor body. The semiconductor body further includes an IGBT-cell with a body region forming a first pn-junction with the base region, and a diode-cell with an anode region forming a second pn-junction with the base region. A source region in ohmic contact with the first electrode and an anti-latch-up region in ohmic contact with the first electrode are, in a vertical cross-section, only formed in the IGBT-cell. The anti-latch-up region has higher maximum doping concentration than the body region. Further a reverse conducting IGBT is provided.

摘要翻译： 提供半导体器件。 半导体器件包括具有基极区域的半导体本体和布置在半导体本体的主水平表面上的第一电极。 半导体本体还包括具有与基极区形成第一pn结的主体区域的IGBT单元和具有与基极区域形成第二pn结的阳极区域的二极管单元。 与第一电极欧姆接触的源极区域和与第一电极欧姆接触的防闩锁区域在垂直截面中仅形成在IGBT电池中。 抗闩锁​​区域具有比身体区域更高的最大掺杂浓度。 此外，提供反向导通IGBT。

公开(公告)号：US20120313225A1

公开(公告)日：2012-12-13

申请号：US13564158

申请日：2012-08-01

申请人： Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide

发明人： Frank Pfirsch ,  Hans-Joachim Schulze ,  Franz-Josef Niedernostheide

IPC分类号： H01L21/66 ,  H01L29/36

CPC分类号： H01L29/7802 ,  H01L21/263 ,  H01L21/266 ,  H01L21/322 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66712

摘要： An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.

摘要翻译： 公开了一种用于制造包括掺杂半导体本体的集成电路的集成电路和方法。 一个实施例提供缺陷相关的供体和/或受体。 所需的缺陷是通过半导体本体的电子照射产生的。 具有元素或元素化合物的形式缺陷相关的供体和/或受体被引入半导体体。

公开(公告)号：US08264040B2

公开(公告)日：2012-09-11

申请号：US11653089

申请日：2007-01-12

申请人： Frank Pfirsch

发明人： Frank Pfirsch

IPC分类号： H01L29/66

CPC分类号： H01L29/7825 ,  H01L29/0634 ,  H01L29/0657 ,  H01L29/402 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/66325 ,  H01L29/66348 ,  H01L29/66681 ,  H01L29/66704 ,  H01L29/7393 ,  H01L29/7816

摘要： A power transistor includes a semiconductor layer an electrode layer. The semiconductor layer having a source zone, a drain zone spaced apart from the source zone in a lateral direction, a drift zone adjacent to the drain zone, and a body zone. The body zone is interposed between the drift zone and the source zone. The electrode layer is dielectrically insulated from the semiconductor layer, and includes a gate electrode divided into at least two sections and a field plate. The field plate is arranged at a first height level relative to the semiconductor layer. A first gate electrode section is arranged at least partially at a second height level, which is lower than the first height level relative to the semiconductor layer. A second gate electrode section, which is laterally displaced from the first gate electrode section, is disposed at a first intermediate level arranged between the first and second height levels.

摘要翻译： 功率晶体管包括半导体层和电极层。 所述半导体层具有源极区域，在横向方向上与所述源极区域隔开的漏极区域，与所述排出区域相邻的漂移区域以及主体区域。 体区位于漂移区和源区之间。 电极层与半导体层介电绝缘，并且包括划分为至少两个部分的栅电极和场板。 场板相对于半导体层布置在第一高度水平。 第一栅极电极部分至少部分地布置在相对于半导体层低于第一高度水平的第二高度水平处。 从第一栅极电极部分横向移位的第二栅极电极部分设置在布置在第一和第二高度电平之间的第一中间电平处。

公开(公告)号：US08264033B2

公开(公告)日：2012-09-11

申请号：US12506844

申请日：2009-07-21

申请人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

发明人： Frank Pfirsch ,  Maria Cotorogea ,  Franz Hirler ,  Franz-Josef Niedernostheide ,  Thomas Raker ,  Hans-Joachim Schulze ,  Hans Peter Felsl

IPC分类号： H01L29/66

CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7397

摘要： A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.

摘要翻译： 半导体器件包括从表面延伸到半导体本体中的第一沟槽和第二沟槽。 第一导电类型的主体区域邻接第一沟槽的第一侧壁和第二沟槽的第一侧壁，主体区域包括邻近源极结构的沟道部分，并且被配置为通过栅极结构来控制其导电性 。 通道部分形成在第二沟槽的第一侧壁处，并且不形成在第一沟槽的第一侧壁处。 第一导电类型的电浮动半导体区域邻接第一沟槽，并且具有位于半导体本体内比底体区域的底侧更深的底侧。

公开(公告)号：US07986005B2

公开(公告)日：2011-07-26

申请号：US11829311

申请日：2007-07-27

申请人： Oliver Schilling ,  Frank Pfirsch

发明人： Oliver Schilling ,  Frank Pfirsch

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/42368 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813 ,  H01L29/7831 ,  H01L29/788

摘要： A power semiconductor device includes a semiconductor body. The semiconductor body includes a body region of a first conductivity type for forming therein a conductive channel of a second conductivity type; a gate electrode arranged next to the body region; and a floating electrode arranged between the gate electrode and the body region.

摘要翻译： 功率半导体器件包括半导体本体。 半导体本体包括第一导电类型的体区，用于在其中形成具有第二导电类型的导电沟道; 布置在身体区域旁边的栅电极; 以及布置在栅极电极和主体区域之间的浮动电极。

公开(公告)号：US20110095362A1

公开(公告)日：2011-04-28

申请号：US12984253

申请日：2011-01-04

申请人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

发明人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L27/04 ,  H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/732 ,  H01L29/735 ,  H01L29/7803 ,  H01L29/7808 ,  H01L29/861

摘要： A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.

摘要翻译： 具有半导体本体的场板沟槽晶体管。 在一个实施例中，半导体具有沟槽结构和嵌入沟槽结构中的电极结构。 电极结构通过绝缘结构与半导体本体电绝缘并具有栅电极结构和场电极结构。 场板沟槽晶体管具有分压器，其被配置为使得场电极结构被设置为位于源极和漏极之间的电位。

公开(公告)号：US07932583B2

公开(公告)日：2011-04-26

申请号：US12119751

申请日：2008-05-13

申请人： Holger Ruething ,  Hans-Joachim Schulze ,  Frank Hille ,  Frank Pfirsch

发明人： Holger Ruething ,  Hans-Joachim Schulze ,  Frank Hille ,  Frank Pfirsch

IPC分类号： H01L29/739 ,  H01L21/8222

CPC分类号： H01L29/7397 ,  H01L29/0834 ,  H01L29/1095 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device comprises a body of a first conductivity type having a source region and a channel, the body being in contact with a top contact layer. The device also comprises a gate arranged adjacent the channel and a drift zone of a second conductivity type arranged between the body and a bottom contact layer. An integrated diode is formed partially by a first zone of the first conductivity type within the body and being in contact with the top contact layer and a second zone of the second conductivity type being in contact with the bottom contact layer. A reduced charge carrier concentration region is formed in the drift zone having a continuously increasing charge carrier lifetime in the vertical direction so that the charge carrier lifetime is lowest near the body and highest near the bottom contact layer.

摘要翻译： 根据一个实施例，半导体器件包括具有源极区和沟道的第一导电类型的本体，该主体与顶部接触层接触。 该装置还包括布置在通道附近的栅极和布置在主体和底部接触层之间的第二导电类型的漂移区。 集成二极管部分地由主体内的第一导电类型的第一区域形成并与顶部接触层接触，并且第二导电类型的第二区域与底部接触层接触。 在漂移区中形成还原电荷载流子浓度区域，其在垂直方向上具有不断增加的电荷载流子寿命，使得电荷载体寿命在身体附近最低，并且在底部接触层附近最高。

公开(公告)号：US07893486B2

公开(公告)日：2011-02-22

申请号：US12349952

申请日：2009-01-07

申请人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

发明人： Franz Hirler ,  Walter Rieger ,  Thorsten Meyer ,  Wolfgang Klein ,  Frank Pfirsch

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L27/04 ,  H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/732 ,  H01L29/735 ,  H01L29/7803 ,  H01L29/7808 ,  H01L29/861

摘要： A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. The electrode structure being electrically insulated from the semiconductor body by an insulation structure and having a gate electrode structure and a field electrode structure. The field plate trench transistor has a voltage divider configured such that the field electrode structure is set to a potential lying between source and drain potentials.

摘要翻译： 具有半导体本体的场板沟槽晶体管。 在一个实施例中，半导体具有沟槽结构和嵌入沟槽结构中的电极结构。 电极结构通过绝缘结构与半导体本体电绝缘并具有栅电极结构和场电极结构。 场板沟槽晶体管具有分压器，其被配置为使得场电极结构被设置为位于源极和漏极之间的电位。

公开(公告)号：US07655975B2

公开(公告)日：2010-02-02

申请号：US11264756

申请日：2005-10-31

申请人： Franz Hirler ,  Wolfgang Werner ,  Markus Zundel ,  Frank Pfirsch

发明人： Franz Hirler ,  Wolfgang Werner ,  Markus Zundel ,  Frank Pfirsch

IPC分类号： H01L29/94

CPC分类号： H01L29/7811 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7813

摘要： A power trench transistor comprises a semiconductor body in which a cell array and an edge region surrounding the cell array are formed. First edge trenches are formed within the edge region. The first edge trenches contain field electrodes and the longitudinal orientations of the first edge trenches run from the cell array towards the edge of the trench transistor.

摘要翻译： 功率沟槽晶体管包括其中形成有单元阵列和围绕单元阵列的边缘区域的半导体本体。 第一边缘沟槽形成在边缘区域内。 第一边缘沟槽包含场电极，并且第一边缘沟槽的纵向取向从单元阵列朝向沟槽晶体管的边缘延伸。