利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

191 条记录 (耗时 0.047 秒)

    n-Type Thiophene Semiconductors
    53.
    发明申请
    n-Type Thiophene Semiconductors 失效
    n型噻吩半导体

    公开(公告)号：US20080293937A1

    公开(公告)日：2008-11-27

    申请号：US12113662

    申请日：2008-05-01

    申请人： Tobin J. Marks ,  Antonio Facchetti

    发明人： Tobin J. Marks ,  Antonio Facchetti

    IPC分类号： C07D409/14

    CPC分类号： H01B1/128 ,  C08G61/126 ,  H01B1/127 ,  H01L27/32 ,  H01L51/0008 ,  H01L51/001 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0541 ,  H01L51/0545

    摘要： The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.

    摘要翻译： 可以以高产率和纯度直接制备新的氟碳官能化和/或杂环改性的聚噻吩，特别是α，ω-二全氟己基噻吩DFH-6T。 引入噻吩核心的这种修饰提供了增强的热稳定性和挥发性，并且相对于现有技术的未改性组合物提高了电子亲和力。 蒸发膜表现为n型半导体，并且可用于制造具有约0.01cm 2 / Vs的FET迁移率的薄膜晶体管 - 对于n型有机半导体迄今为止最高的一些。

    n-Type thiophene semiconductors
    55.
    发明授权
    n-Type thiophene semiconductors 失效
    n型噻吩半导体

    公开(公告)号：US06991749B2

    公开(公告)日：2006-01-31

    申请号：US10610276

    申请日：2003-06-30

    申请人： Tobin J. Marks ,  Antonio Facchetti

    发明人： Tobin J. Marks ,  Antonio Facchetti

    IPC分类号： H01B1/12

    CPC分类号： H01B1/128 ,  C08G61/126 ,  H01B1/127 ,  H01L27/32 ,  H01L51/0008 ,  H01L51/001 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0508 ,  H01L51/0512 ,  H01L51/0541 ,  H01L51/0545

    摘要： The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2 Vs—some of the highest reported to date for n-type organic semiconductors.

    摘要翻译： 可以以高产率和纯度直接制备新的氟碳官能化和/或杂环改性的聚噻吩，特别是α，ω-二全氟己基噻吩DFH-6T。 引入噻吩核心的这种修饰提供了增强的热稳定性和挥发性，并且相对于现有技术的未改性组合物提高了电子亲和力。 蒸发膜表现为n型半导体，可用于制造具有FET迁移率〜0.01cm 2 Vs的薄膜晶体管，这是迄今为止报道的n型有机半导体的最高值。

    Organic-inorganic hybrid multilayer gate dielectrics for thin-film transistors
    57.
    发明授权
    Organic-inorganic hybrid multilayer gate dielectrics for thin-film transistors 有权
    用于薄膜晶体管的有机 - 无机混合多层栅极电介质

    公开(公告)号：US09276226B2

    公开(公告)日：2016-03-01

    申请号：US13111699

    申请日：2011-05-19

    申请人： Tobin J. Marks ,  Young-geun Ha ,  Antonio Facchetti

    发明人： Tobin J. Marks ,  Young-geun Ha ,  Antonio Facchetti

    IPC分类号： H01L51/05

    CPC分类号： H01L51/0533 ,  H01L21/441 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66969 ,  H01L51/0053 ,  H01L51/0055 ,  H01L51/0529 ,  H01L51/0537 ,  H01L51/0545 ,  H01L2251/301

    摘要： Disclosed are organic-inorganic hybrid self-assembled multilayers that can be used as electrically insulating (or dielectric) materials. These multilayers generally include an inorganic primer layer and one or more bilayers deposited thereon. Each bilayer includes a chromophore or “π-polarizable” layer and an inorganic capping layer composed of zirconia. Because of the regularity of the bilayer structure and the aligned orientation of the chromophore resulting from the self-assembly process, the present multilayers have applications in electronic devices such as thin film transistors, as well as in nonlinear optics and nonvolatile memories.

    摘要翻译： 公开了可用作电绝缘（或电介质）材料的有机 - 无机混合自组装多层膜。 这些多层通常包括无机底漆层和沉积在其上的一个或多个双层。 每个双层包括发色团或“＆pgr可极化”层和由氧化锆组成的无机覆盖层。 由于双层结构的规则性和由自组装过程产生的发色团的排列取向，所以本发明的多层膜可用于诸如薄膜晶体管的电子器件，以及非线性光学和非易失性存储器中。